Abstract: A radiation emitting semiconductor chip may include a radiation emitting surface, an epitaxial semiconductor layer sequence having active regions, and a mounting surface facing the radiation emitting surface. The mounting surface may include a plurality of first and second solderable contact surfaces. Each active region may be suppliable with current with a respective first and second solderable contact surface. The first solderable contact surfaces may be arranged in an inner region of the mounting surface. The second solderable contact surface may be arranged in an edge region of the mounting surface. Furthermore, a radiation emitting semiconductor device and a head lamp having such a semiconductor chip may also be useful.

Abstract: A display may include light-emitting components such as light-emitting diodes on a transparent substrate. Conductive signal paths between the light-emitting components, driver integrated circuits for controlling the light-emitting components, and the light-emitting components themselves may be opaque. To mitigate diffraction artifacts caused by the opaque components, the opaque footprint of the display may be selected to include non-periodic portions. The non-periodic portions increase randomness and reduce periodicity within the opaque footprint, which mitigates perceptible diffraction artifacts when viewing the display. One or both of the component mounting portions and interconnect portions of the opaque footprint may be non-periodic. The component mounting portions may have random shapes. The interconnect portions may follow random paths between the component mounting portions.

Abstract: In an embodiment, an optoelectronic semiconductor component includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, wherein a respective semiconductor material of the first and second semiconductor layers are each a compound semiconductor material including a first, a second and a third composition element, and a second contact region configured to electrically contact the second semiconductor layer, wherein the first semiconductor layer is patterned and arranged over the second semiconductor layer, wherein the second contact region is arranged between patterned regions of the first semiconductor layer, wherein the second contact region comprises a second metallic contact layer and a semiconductor contact layer between the second metallic contact layer and the second semiconductor layer, wherein a semiconductor material of the semiconductor contact layer includes the first, second and third composition elements, and wherein a concentration

Abstract: An optoelectronic device including a support, at least a first conductive layer covering the support, display pixels including first and second opposite surfaces, bonded to the first conductive layer, each pixel including an electronic circuit including the first surface and a third surface opposite to the first surface, the first surface being bonded to the first conductive layer, and an optoelectronic circuit bonded to the third surface and including at least two light-emitting diodes, at least one of the electrodes of each light-emitting diode being connected to the electronic circuit by the third surface, the optoelectronic circuit further comprising photoluminescent blocks covering the light-emitting diodes and conductive or semiconductor walls surrounding the photoluminescent blocks, and at least one second conductive layer electrically coupled to at least one of the pixels.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly binder materials for light-emitting devices are disclosed. A lumiphoric material for a light-emitting device may include lumiphoric particles embedded within a binder material. The lumiphoric material may be formed according to sol-gel chemistry techniques where a solution of binder precursors and lumiphoric particles is applied to a surface, dried to reduce liquid phase, and fired to form a hardened and dense lumiphoric material. The binder precursors may include metal oxide precursors that result in a metal oxide binder. In this manner, the lumiphoric material may have high thermal conductivity while also being adaptable for liquid-phase processing. In further embodiments, binder materials with or without lumiphoric particles may be utilized in place of conventional encapsulation materials for light-emitting devices.

Abstract: A display panel including a first display area, a second display area and a third display area. The second display area surrounds at least a part of the first display area and is located between the first display area and the third display area; the second display area includes a plurality of first groups of driving transistors and a plurality of second groups of driving transistors, the first groups of driving transistors include driving transistors for driving pixel units of the first display area, the second groups of driving transistors include driving transistors for driving pixel units of the second display area. The second groups of driving transistors and the first groups of driving transistors are alternately arranged, and a number and relative positions of the second groups of driving transistors adjacent to each first group of driving transistors are the same.

Abstract: A display apparatus includes: a substrate including a substantially flat area and a curved area extending from the substantially flat area; a first pixel electrode arranged in the curved area; a first emission layer disposed on the first pixel electrode; a second pixel electrode arranged in the substantially flat area; a second emission layer disposed on the second pixel electrode; a first functional layer having a first thickness disposed between the first pixel electrode and the first emission layer; and a second functional layer having a second thickness disposed between the second pixel electrode and the second emission layer. The first thickness is greater than the second thickness.

Abstract: A microdevice structure comprising at least part of an edge of a microdevice is covered with a metal-insulator-semiconductor (MIS) structure, wherein the MIS structure comprises a MIS dielectric layer and a MIS gate conductive layer, at least one gate pad provided to the MIS gate conductive layer, and at least one micro device contact extended upwardly on a top surface of the micro device.

Abstract: A display device including a first integrated circuit including: an assembly of light-emitting diodes, each diode including a vertical stack of a first semiconductor layer of a first conductivity type and of a second semiconductor layer of a second conductivity type; and on the side of a surface of the first circuit opposite to the first semiconductor layer, a connection structure including a dielectric layer having a plurality of identical or similar connection pads, regularly distributed across the entire surface of the first circuit, arranged therein, each diode having a first electrode in contact with at least one pad of the connection structure, and a second electrode in contact with a plurality of pads of the connection structure at the periphery of the plurality of diodes.

Abstract: A lighting device comprises a light-emitting module with light-emitting elements, wherein the light-emitting elements are arranged adjacent to each other and are configured to emit light towards a light-emitting side. The light-emitting module is configured such that the light-emitting elements can be addressed partially independently of each other, such that some may be brought into a switched-on state while others are brought into a switched-off state. A top layer is disposed on the light-emitting module at the light-emitting side. Further comprising a switching material capable of a reversible change in transmittance for the light emitted by changing to a higher transmittance in regions where the top layer situated on light-emitting elements in the switched-on state or to a lower transmittance in regions of the top layer situated in the switched-off state. The invention further refers to methods for producing and operating a lighting device and using a lighting device.

Abstract: An embodiment of the present invention provides a micro light emitting diode (LED) array and its manufacturing method. The micro-LED includes a substrate, an epitaxial layer formed on the substrate, and a conversion film formed on the epitaxial layer. Pixels can be defined through lithography, and the pixel size can be very small. This method is characterized in that a mass transfer is not required.

Abstract: A micro-LED chip includes an epitaxial layered structure, and first and second electrodes. The epitaxial layered structure includes first-type and second-type semiconductor layers, and a light emitting layer sandwiched therebetween. The first and second electrodes are electrically connected to the first-type and second-type semiconductor layers, respectively. The micro-LED chip has a first distinctive region on an electrode surface of the first electrode. The first distinctive region has a surface morphology different from that of an adjacent region of the electrode surface of the first electrode. A method for manufacturing a micro-LED device including at least one micro-LED chip is also provided.

Abstract: A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structure 20 which includes a GaN-based compound semiconductor and in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, and forming a concave mirror section 43 on a first surface side of the first compound semiconductor layer 21; then (B) forming a photosensitive material layer 35 over the second compound semiconductor layer 22; and thereafter (C) exposing the photosensitive material layer 35 to light from the concave mirror section side through the stacked structure 20, to obtain a treatment mask layer including the photosensitive material layer 35, and then processing the second compound semiconductor layer 22 by use of the treatment mask layer.

Abstract: An optoelectronic semiconductor component may have a semiconductor body comprising a first region of an n-type conductivity, a second region of a p-type conductivity, an active region capable of generating electromagnetic radiation, a marker layer, a plurality of emission regions and a plurality of recesses. The active region is disposed between the first region and the second region in a plane parallel to the main extension plane of the semiconductor body. The recesses delimit the emission regions in lateral direction. Starting from the side of the first region facing away from the active region, the recesses extend transversely to the main plane of the semiconductor body in the direction of the second region and adjoin the marker layer or penetrate the marker layer completely. The recesses are formed only in the first region or the recesses extend into the second region and completely penetrate the active region.

Abstract: Organic light emitting diode (OLED) devices are disclosed that include a first layer; a backfill layer having a structured first side and a second side; a planarization layer having a structured first side and a second side; and a second layer; wherein the second side of the backfill layer is coincident with and adjacent to the first layer, the second side of the planarization layer is coincident with and adjacent to the second layer, the structured first side of the backfill layer and structured first side of the planarization layer form a structured interface, the refractive index of the backfill later is index matched to the first layer, and the refractive index of the planarization layer is index matched to the second layer.

Abstract: An ultrasonic device includes nine ultrasonic array units arranged in a grid pattern of three rows and three columns, nine drive bypass wires that input and output drive signals to and from the respective ultrasonic array units, a first common bypass wire to which a common potential is applied, coupled to the eight ultrasonic array units, a second common bypass wire coupled to the ultrasonic array unit to which the first common bypass wire is not coupled, and a third common bypass wire coupling the first and the second common bypass wires. One of the drive bypass wires, the first common bypass wire, and the second common bypass wire is placed between the ultrasonic array units placed adjacent to each other. The third common bypass wire is placed inside of the ultrasonic array unit placed adjacent to the ultrasonic array unit coupled to the second common bypass wire.

Abstract: A touch display device exhibiting low reflectivity is disclosed. The touch display device includes a light-blocking stack composed of at least two light-blocking color layers overlapping a plurality of touch electrodes disposed on an encapsulation unit, and a low-reflection layer disposed on the light-blocking stack, thereby absorbing external light without a separate polarizing plate, thus exhibiting low reflectivity.

Abstract: Provided are an optical device that is a small and thin optical device including a redistribution layer and has high light emitting efficiency and light receiving efficiency, and a method for manufacturing the optical device. An optical device includes: a photoelectric conversion element configured to include a semiconductor substrate, a semiconductor layer capable of receiving or emitting light, and electrodes; a sealing portion configured to expose a surface of the photoelectric conversion element on the opposite side to an electrode-formed surface of the photoelectric conversion element on which the electrodes are formed; a redistribution layer configured to include a reflecting portion disposed in a region in which, when viewed in plan, the semiconductor layer and the electrodes do not overlap each other and configured to reflect the light to a side on which the semiconductor layer is located; and external connection terminals configured to be coupled to the redistributions.

Abstract: An object is to promote a reduction in thickness of a light guide plate and suppress brightness non-uniformity of the light guide plate. A light guide plate, including: a light exit surface from which light is emitted; an opposite surface on an opposite side of the light exit surface; a depressed portion provided on the opposite surface; and a plurality of scattering portions which are provided on the light exit surface, the opposite surface, and a bottom surface of the depressed portion and which refract and scatter light, wherein the depressed portion has a tapered surface which spreads from the bottom surface of the depressed portion toward an opening of the depressed portion.

Abstract: A light-emitting device including a light-emitting semiconductor chip having a semiconductor layer sequence having at least one light-emitting semiconductor layer and a light-outcoupling surface, the light-emitting device further including a wavelength conversion layer arranged on the light-outcoupling surface, the wavelength conversion layer including quantum dots.

Abstract: A method of encapsulating an organic light-emitting diode display includes depositing a plurality of first polymer projections onto a light-emitting side of a display layer having a plurality of organic light-emitting diodes (OLEDs) such that the plurality of first polymer projections have spaces therebetween that expose an underlying surface, and conformally coating the first polymer projections and the spaces between the first polymer projections with a first dielectric layer such that the first dielectric layer has side walls along sides of the first polymer projections and defines wells in spaces between the side walls.

Abstract: The disclosure provides a method for manufacturing a light-emitting element, including the following steps. A light-emitting diode is provided. An energy beam is applied to process a surface of the light-emitting diode, where a power density of the energy beam is greater than 0 mJ/cm2 and less than or equal to 2000 mJ/cm2. The light-emitting element manufactured using the method for manufacturing a light-emitting element disclosed in embodiments of the disclosure may improve light extraction efficiency, may have a relatively good light-emitting effect, and may be electrically connected to a drive circuit to constitute an electronic device.

Abstract: Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods are disclosed. A solid state radiative semiconductor structure in accordance with a particular embodiment includes a first region having a first value of a material characteristic and being positioned to receive radiation at a first wavelength. The structure can further include a second region positioned adjacent to the first region to emit radiation at a second wavelength different than the first wavelength. The second region has a second value of the material characteristic that is different than the first value, with the first and second values of the characteristic forming a potential gradient to drive electrons, holes, or both electrons and holes in the radiative structure from the first region to the second region. In a further particular embodiment, the material characteristic includes material polarization.

Abstract: An organic light-emitting display apparatus including: a substrate; a pixel electrode located on the substrate; a pixel-defining film coveting an end portion of the pixel electrode; an intermediate layer located on the pixel electrode and including an emission layer; a counter electrode located on the intermediate layer; a passivation layer located on the counter electrode and including a cover portion covering a top surface of the counter electrode and a protrusion extending from an end portion of the cover portion away from the substrate; and an encapsulation member covering the passivation layer.

Abstract: An array substrate and a display panel are provided. The array substrate includes a first region and a second region. The first region corresponds to a display region of the display panel. The second region corresponds a non-display region of the display panel. The second region includes a substrate and an electrically conductive line formed on the substrate. The second region further includes at least one metal pattern formed between the substrate and the electrically conductive line.

Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first insulating layer on the substrate, a contact penetrating through the first insulating layer, a color filter on at least one side of the contact, and a moisture absorption prevention layer in contact with a sidewall of the contact and extending on an upper surface of the color filter.

Abstract: A method is described for low temperature curing of silicone structures, including the steps of providing patterning photoresist structures on a substrate. The photoresist structures define at least one open region that can be at least partially filled with a condensation cure silicone system. Vapor phase catalyst deposition is used to accelerate the cure of the condensation cure silicone, and the photoresist structure is removed to leave free standing or layered silicone structures. Phosphor containing silicone structures that are coatable with a reflective metal or other material are enabled by the method.

Abstract: A light-emitting device includes a substrate including a base member having an upper surface having a substantially rectangular shape, a lower surface opposite to the upper surface, a first longer lateral surface, a second longer lateral surface opposite to the first longer lateral surface, a first shorter lateral surface, and a second shorter lateral surface opposite to the first shorter lateral surface, first wirings disposed on the upper surface, and second wirings disposed on the lower surface and each electrically connected with a respective one of the first wirings; at least one light-emitting element; and a light-reflective covering member covering lateral surfaces of the light-emitting element and the upper surface of the base member. The base member has at least one first recess open at the upper surface and the first longer lateral surface. Surfaces defining the at least one first recess are covered with the covering member.

Abstract: A method for applying a patterned structure on a surface, comprising providing a donor substrate (1) comprising donor material (1a) between a light source (3) and a receiving surface (5), providing by means of the light source (3) a light pulse (3a) directed to the donor substrate (1), the light pulse (3a) being configured to cause the donor material (1a) to be transferred from the donor substrate (1) onto the receiving surface (5), wherein the donor substrate (1) comprises a pattern (2) of donor material (1a) on discrete portions (2a) of the donor substrate (1). The pattern (2) on the donor substrate (1) is transferred so as to form a pattern (4) of donor material (1a) on the receiving surface (5).

Abstract: Provided is a disclosure relating to a method for manufacturing an organic solar cell comprising providing a substrate; forming a first electrode on the substrate; forming a photoactive layer by coating a solution comprising a photoactive material and a solvent on the first electrode; drying the photoactive layer in a closed drying system having a constant volume; and forming a second electrode on the photoactive layer, and an organic solar cell manufactured using the same.

Abstract: A structure with micro device includes a substrate, at least one micro device, and at least one holding structure. The micro device includes an epitaxial structure and an overcoat layer. The epitaxial structure has a top surface and a bottom surface opposite to each other and a peripheral surface connecting the top surface and the bottom surface. The overcoat layer includes a contact portion and an extension portion. The contact portion covers the peripheral surface and the bottom surface of the epitaxial structure. The extension portion connects the contact portion and extends in a direction away from the peripheral surface. The holding structure includes at least one connecting portion, at least one sacrificial portion and at least one holding portion. The connecting portion is disposed on the top surface of the epitaxial structure and the extension portion of the overcoat layer. The sacrificial portion connects the connecting portion and the holding portion.

Abstract: In some embodiments, the present disclosure relates to a method of forming a package assembly. A wet etch stop layer is formed over a frontside of a semiconductor substrate. A sacrificial semiconductor layer is formed over the wet etch stop layer, and a dry etch stop layer is formed over the sacrificial semiconductor layer. A stack of semiconductor device layers may be formed over the dry etch stop layer. A bonding process is performed to bond the stack of semiconductor device layers to a frontside of an integrated circuit die, wherein the frontside of the semiconductor substrate faces the frontside of the integrated circuit die. A wet etching process is performed to remove the semiconductor substrate, and a dry etching process is performed to remove the wet etch stop layer and the sacrificial semiconductor layer.

Abstract: A photon-activated quantum dot capacitor and method of fabrication. A photon-activated quantum dot capacitor photodetector having a read only integrated circuit; and a photon-activated quantum dot capacitor chip hybridized with the read only integrated circuit, wherein said photon-activated quantum dot capacitor chip comprises colloidal quantum dots that detect photons as a change in a dielectric constant of the colloidal quantum dots of the photon-activated quantum dot capacitor chip, including the further implementation of a photodetector.

Abstract: A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.

Abstract: A method for producing a glass article from a glass member including a glass substrate including a first main surface, a second main surface and an end face, and an irregular layer formed in at least one of main surfaces, includes forming an irregular layer having a glass transition point Tg which is equal to or lower than a glass transition point in a central part of the glass member in a thickness-direction sectional view and performing a heat treatment on the glass member so as to have an equilibrium viscosity in the central part of the glass member in thickness-direction sectional view of 1017 Pa·s or lower.

Abstract: The present disclosure discloses a sector-shaped closely-packed laser generator, comprising a module packaging unit and a closely-packed output unit; the module packaging unit is provided therein with a plurality of single-die modules, and each of the single-die modules has a coupling optical fiber; the closely-packed output unit is provided therein with a silicon wafer whose surface has a plurality of V-shaped grooves, and the plurality of V-shaped grooves are arranged into a sector shape; and the coupling optical fibers of the single-die modules protrude from the module packaging unit and enter the closely-packed output unit, and are arranged in the V-shaped grooves after coating layers being stripped, to emit laser lights in directions of the arrangement of the V-shaped grooves.

Abstract: FinFET devices with source/drain contacts with reduced resistance/capacitance power loss and with an enhanced processing window between the source/drain contacts and a gate via and methods of manufacture are described herein. A metal riser may be formed in a first recess of a source/drain contact of a first material. The metal riser and a contact via may be formed from a second material and the contact via may be formed over the metal riser to provide a hybrid source/drain contact of a finFET with a wide surface contact area at an interface between the source/drain contact and the metal riser. A dielectric fill material and/or a conformal contact etch stop layer may be used to form an isolation region in a second recess of the source/drain contact to extend a processing window disposed between the isolation region and a gate contact of the finFET.

Abstract: A display device including a light source including a first electrode having a light reflectance for a first light of greater than or equal to about 60%; an organic light emitting layer disposed on the first electrode and emitting the first light; and a second electrode disposed on the organic light emitting layer and having a light transmittance in a visible wavelength region of greater than or equal to about 70%, wherein the light source has a first absorption peak in a wavelength region of about 650 nanometers (nm) to about 750 nm or a second absorption peak in a wavelength region of about 550 nm to about 600 nm at a viewing angle of about 55 degrees to about 85 degrees, and a color filter layer disposed above the light source and including a quantum dot configured to convert the first light into a second light.

Abstract: A light-emitting apparatus includes a substrate, pads disposed on the substrate, a sacrificial pattern layer and a light-emitting diode element disposed on the sacrificial pattern layer. The light-emitting diode element includes a first type semiconductor layer, a second type semiconductor layer, an active layer, and electrodes. A connection patterns disposed on at least one of the electrodes and the pads. Materials of the connection patterns include hot fluidity conductive materials. The connection patterns cover a sidewall of the sacrificial pattern layer and are electrically connected to the at least one of the electrodes and the pads. In addition, the manufacturing method of the above light-emitting apparatus is also proposed.

Abstract: Devices are provided for providing on-screen optical sensing of fingerprints by using an under-screen optical sensor module for improved optical fingerprint sensing including using an optical sensor module to include (1) an optical sensor array of optical detectors to detect light that carries a fingerprint pattern, (2) a pinhole layer structured to include an array of pinholes and located above the optical sensor array to spatially filter incident light to be detected by the optical detectors; and (3) a lens layer structured to include an array of lenses formed above the pinhole layer where the lenses are spatially separated and positioned so that one lens is placed above one corresponding pinhole in the array of pinholes and different lenses in the lens array are placed above different pinholes in the array of pinholes, respectively, to allow the optical sensor array to receive and detector the incident light.

Abstract: In an embodiment, a display device comprises a display panel and a backlight unit. The backlight unit comprises a substrate, phosphor film, light-emitting devices, and light-modifying portion. A part of light emitted by the light-emitting devices traveling along a first path that passes through the phosphor film and another part of the emitted light traveling along a second path that bypasses the phosphor film. The light-modifying portion is in the second path and modifies a color of the other part of the emitted light so that the modified color is closer to a color of the part of the light through the phosphor film than a color of the emitted light at the light-emitting devices.

Abstract: A signal control unit for an organic light emitting diode (OLED) display device, includes a substrate structure including a plurality of active elements each corresponding to a pixel, a lower metal pattern disposed on the substrate structure, and electrically connected to a portion of the plurality of active elements, an insulating interlayer disposed on the substrate structure and at least partially covering the lower metal pattern, a via contact penetrating through the insulating interlayer and connected to the lower metal pattern, a metal electrode disposed on the insulating interlayer, and connected to the via contact, and an electrode passivation layer pattern substantially covering the metal electrode to expose a center portion of an upper surface of the metal electrode while covering a remainder of the upper surface and a side surface of the metal electrode. Therefore, leakage current which flows through the side surface of the metal electrode is suppressed.

Abstract: The present disclosure provides an OLED substrate and a manufacturing method thereof, a display device and a manufacturing method thereof, and belongs to the technical field of display technology. A manufacturing method for an OLED substrate of the present disclosure includes: forming, by a patterning process, a pattern including first electrodes of OLED devices and a pixel defining layer provided above the first electrodes above the base substrate, wherein the pixel defining layer includes a plurality of pixel partition walls spaced apart from each other, each of the pixel partition walls defines one of the first electrodes.

Abstract: Provided is a laminated glass, comprising: a soda lime glass; and a non-tempered alkali-free glass bonded to one surface of the soda lime glass, in which a thickness of the soda lime glass is larger than a thickness of the non-tempered alkali-free glass, and an elastic modulus of the non-tempered alkali-free glass is larger than an elastic modulus of the soda lime glass.

Abstract: An organic electroluminescent device, a manufacturing method thereof and an evaporation apparatus are provided. The manufacturing method for the organic electroluminescent device includes: forming, on a base substrate, a first electrode layer; performing vacuum evaporation on an organic functional layer material to be evaporated, and performing a heat treatment, during the evaporation of the organic functional layer material to be evaporated, on the base substrate on which the first electrode layer is formed, so as to form an organic functional layer on the base substrate on which the first electrode layer is formed; and forming, on the base substrate on which the organic functional layer is formed, a second electrode layer.

Abstract: A display and a method of coating an alignment film are provided. The method of coating an alignment film includes step S10, providing substrate to-be-coating with the alignment film, positioned the substrate to-be-coating with the alignment film on optical bench; step S11, pressing against to the substrate by a print wheel has alignment film printing template, and rolling by predetermined coating direction, uniform coating alignment liquid on to-be-coating region of the substrate; wherein, the substrate rolling with the optical bench and forms changing angle with horizontal surface during the coating process; and step S12, controlling the optical bench for driving the substrate to vibrate after coating the to-be-coating region. In this invention provides a method could suit to difference mobility alignment film, it could greatly enhances uniformity of the alignment film such decrease opportunity to Mura happened by worse quality of printing the alignment film.

Abstract: A semiconductor device includes a substrate, a transistor, a storage capacitor, a first insulating layer, and a second insulating layer. The transistor includes a semiconductor film, a gate insulating film, a first gate electrode, and a second gate electrode. The semiconductor film, the gate insulating film, and the first gate electrode are provided in this order from the substrate. The second gate electrode faces the first gate electrode across the semiconductor film. The storage capacitor includes a lower electrode and an upper electrode that are provided in this order from the substrate. The upper electrode faces the lower electrode and includes the same material as the semiconductor film. The first insulating layer is provided between the second gate electrode and the semiconductor film. The second insulating layer is provided between the lower electrode and the upper electrode and has a smaller thickness than the first insulating layer.

Abstract: A method of fabricating a high-crystalline-quality and high-uniformity AlN layer within a high electron mobility transistor (HEMT) device with a metalorganic chemical vapor deposition (MOCVD) technique, includes: raising a temperature of a substrate to an ultra-high growth temperature; and supplying an Al source and an N source in pulses over the substrate under the ultra-high growth temperature, wherein the ultra-high growth temperature is at least 1300° C. At least for a first predetermined period of time in each cycle of the pulses, the Al source is switched on when the N source is switched off.

Abstract: A semiconductor laser (100) and a method for processing the semiconductor laser are provided, so that modulation bandwidth can be increased.

Abstract: A light-emitting device includes a light-emitting element and a wavelength conversion layer. The light-emitting element has a top surface, a bottom surface, a side surface, and a first electrical contact formed on the bottom surface. The distance between the top surface and the bottom surface has a first height (h1). The wavelength conversion layer has a first area (A1) located on the top surface of the light-emitting element and a second area (A2) located on the side surfaces and surrounding the first area. The first area has a second height (h2). The second area has a third height (h3) and a second width (w2). The second height (h2) is greater than the second width (w2). The difference of the third height and the sum of the first height and the second height is less than 15 ?m.