Abstract: An ink for forming a functional layer, which is used when any thin film layer among functional layers consisting of a plurality of thin film layers is formed, includes a functional layer forming material and a solvent for dissolving the functional layer forming material, and in which the number of particles of 0.5 ?m or more is 7 or less in 10 ml of the ink for forming a functional layer.

Abstract: Disclosed is a method for preventing a short circuit between metal wires in an organic light emitting diode display device. The method includes: forming an inorganic layer on a substrate; forming a metal layer including two metal wires on the inorganic layer; forming an organic layer on the two metal wires; forming an indium tin oxide layer on the organic layer; coating a photoresist layer; performing an exposure step by utilizing a photo mask having a transparent area, an opaque material disposed in the transparent area, wherein a width of the opaque material is less than a width of the transparent area; performing a development step to the photoresist layer; and performing an etching step to remove a part of the indium tin oxide layer and a part of the organic layer. The present invention can prevent the short circuit between the metal wires.

Abstract: The present invention provides a method of fabricating a vertical type light-emitting diode and a method of separating layers from each other. Crystalline rods are provided on a lower layer or a lower substrate. The crystalline rods comprise ZnO. A layer which constitutes light-emitting diode or a light-emitting diode structure is formed on the crystalline rods, and the lower substrate is separated therefrom. The crystalline rods are dissolved during the separation. The formation of the crystalline rods is achieved by the formation of a seed layer and selective growth based on the seed layer.

Abstract: An ink jet device includes a plurality of ink jet heads each including an ink housing unit that houses therein ink, a pressure application unit that ejects a droplet of the ink by applying pressure to the ink, and a nozzle through which the droplet of the ink is ejected, wherein with respect to at least one of the plurality of ink jet heads, a preliminary drive operation and a main drive operation are performed, the preliminary drive operation is an operation of pushing the ink toward an outer edge of the nozzle to the extent that the droplet of the ink is not ejected through the nozzle, and the main drive operation is an operation of ejecting the droplet of the ink through the nozzle after performance of the preliminary drive operation.

Abstract: Method for manufacturing organic EL element, including: reducing internal pressure of vacuum chamber by vacuum pump connected thereto in state where substrate with applied film formed thereon is placed in vacuum chamber, applied film having been formed by applying material of organic light-emitting layer to substrate; and purifying applied film having passed through reducing the internal pressure of the vacuum chamber. Diphenylamine is used in portion of vacuum pump that is connected to inside of vacuum chamber. Reducing internal pressure of vacuum chamber is performed such that molecules of diphenylamine fly from vacuum pump into vacuum chamber and some of molecules are taken into applied film, and purifying is performed so that content of diphenylamine in applied film is in range from more than 0 nmol/cm3 to 13.8 nmol/cm3.

Abstract: Various embodiments may relate to a device for the surface treatment of a substrate, including a processing head, which is mounted rotatably about an axis of rotation, and which comprises multiple gas outlets, which are at least partially implemented on a radial outer edge of the processing head.

Abstract: An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Abstract: The present invention relates to a method for the deposition of at least one layer of an organic material on a substrate by (a) providing a source of a solid organic material in an atmosphere at a pressure comprised between 50 and 200 kPa, (b) heating said organic material to a first temperature to produce a vapor of said organic material, (c) exposing at least one surface of a substrate having a second temperature lower than said first temperature to said vapor to deposit organic material from said vapor onto said at least one surface of said substrate.

Abstract: Provided is a method for manufacturing an organic EL device which suppresses a deterioration in the light emission properties. In this method, while first and second electrode layers are prevented from being in contact with each other, an organic layer is allowed to protrude from the first electrode layer toward at least both outer sides in the longitudinal direction of a substrate. Further, the second electrode layer is allowed to protrude from the organic layer toward at least both outer sides in the longitudinal direction. Thereby, the first electrode layer, the organic layer, and the second electrode layer are formed so that both end edges of the organic layer in a longitudinal direction of the substrate are covered by both end sides of the second electrode layer in the longitudinal direction, on at least both outer sides of the light emitting part in the longitudinal direction.

Abstract: The present invention relates to an organic electrochemical device and a fabrication method thereof. The organic electrochemical device according to the present invention comprises: a substrate; a first electrode provided on the substrate; an intermediate layer provided on the first electrode; a second electrode provided on the intermediate layer; and a first organic material layer, in which at least a part of the first organic material layer is in contact with the second electrode and the intermediate layer.

Abstract: A low temperature, low cost method of encapsulating organic light emitting diodes (OLED) that avoids damage to the OLED device. One method comprises forming a metal passivation layer using a plasma, UV-ozone, or wet chemical treatment, wherein the metal passivation layer serves to encapsulate and protect the OLED from moisture and oxygen. Another method comprises forming a buffer layer and a metal layer onto the OLED and then treating the metal layer using a plasma, UV-ozone, or wet chemical treatment, to form a metal passivation layer that serves to encapsulate and protect the OLED from moisture and oxygen.

Abstract: Disclosed is a semiconductor light emitting element (LC) provided with a substrate (110) having one surface on which plural hexagonal-pyramid-shaped protrusions (110b) are provided, a base layer (130) provided so as to be in contact with the surface on which the protrusions (110b) are provided, an n-type semiconductor layer (140) provided so as to be in contact with the base layer (130), a light emitting layer (150) provided so as to be in contact with the n-type semiconductor layer (140), and a p-type semiconductor layer (160) provided so as to be in contact with the light emitting layer (150). Each protrusion (110b) scatters light in lateral and oblique directions within the semiconductor light emitting element (LC). The protrusions are densely arranged on a substrate on which semiconductor layers are laminated, so that the light extraction efficiency is improved.

Abstract: A method to grow single phase group III-nitride articles including films, templates, free-standing substrates, and bulk crystals grown in semi-polar and non-polar orientations is disclosed. One or more steps in the growth process includes the use of additional free hydrogen chloride to eliminate undesirable phases, reduce surface roughness, and increase crystalline quality. The invention is particularly well-suited to the production of single crystal (11.2) GaN articles that have particular use in visible light emitting devices.

Abstract: A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1×1014 cm?2, and locally exceeding 1022 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

Abstract: Provided are a resin composition and a substrate that are capable of being used for manufacturing an electronic device having excellent light extraction efficiency. The resin composition contains a polymer and a solvent dissolving the polymer. The resin composition is used to form a layer, and when refractive indexes of the layer along two perpendicular in-plane directions thereof are respectively defined as “Nx” and “Ny” and a refractive index of the layer along a thickness direction thereof is defined as “Nz”, Nx, Ny and Nz satisfy a relationship of “(Nx+Ny)/2?Nz”>0.01. Further, a method of manufacturing the electronic device by using such a substrate, and the electronic device are also provided.

Abstract: An organic light-emitting device comprising: an anode; a cathode; a first light-emitting layer between the anode and the cathode, the first light-emitting layer comprising a fluorescent light-emitting material having a triplet excited state energy level T1F and a triplet-triplet annihilation (TTA) promoter having a triplet excited state energy level T1T wherein T1F>1T; and a second light-emitting layer between the anode and the cathode and adjacent to the first light-emitting layer, the second light-emitting layer comprising a phosphorescent material having a triplet excited state energy level T1P wherein T1P>T1T.

Abstract: An inkjet device includes an inkjet head having a pressure applier applying voltage to ink contained in a ink reservoir, by executing a standby drive operation of applying a standby oscillation to the ink and a main drive operation of applying a main oscillation to cause the ink to be discharged from nozzles, such that the start of main drive operation execution is within a period where the displacement in the standby oscillation is oriented toward the interior of the nozzles in order to produce interference between the standby oscillation.

Abstract: In a group III nitride semiconductor device according to one aspect of the present invention, in a p-type group III nitride semiconductor region formed on a semi-polar plane substrate, the concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region is 25% or less of the concentration of a p-type dopant therein, and the concentration of oxygen contained in the p-type group III nitride semiconductor region is 5×1017 atoms/cm3 or lower, and an angle between a normal axis of a primary surface of the semi-polar plane substrate and a c-axis of the semi-polar plane substrate is not lower than 45 degrees and not higher than 80 degrees or not lower than 100 degrees and not higher than 135 degrees in a waveguide axis direction of the group III nitride semiconductor device.

Abstract: A semiconductor light emitting element (1) including of a substrate (110) composed of sapphire; a laminated semiconductor layer (100) composed of an n-type semiconductor layer (140), a light emitting layer (150) and a p-type semiconductor layer (160) provided on the substrate (110); a first electrode (170) formed in the p-type semiconductor layer (160); and a second electrode (180) formed in the n-type semiconductor layer (140). Further, the first electrode (170) includes a first conductive layer (171) composed of an oxide transparent conductive material laminated on the p-type semiconductor layer (160); a reflection layer (172) which contains silver laminated on the first conductive layer (171); a second conductive layer (173) composed of an oxide conductive material laminated on the reflection layer (172); and a coating layer (174) provided so as to cover the first conductive layer (171), the reflection layer (172) and the second conductive layer (173).

Abstract: A method of fabricating a gallium nitride (GaN)-based semiconductor device. The method includes preparing a GaN substrate having lower and upper surfaces; growing GaN-based semiconductor layers on the upper surface of the GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; and separating the GaN substrate from the semiconductor stack. The separating of the GaN substrate includes irradiating a laser from the lower surface of the GaN substrate. The laser is transmitted through the lower surface of the GaN substrate and forms a laser absorption region inside a structure consisting of the GaN substrate and the semiconductor stack.

Abstract: An organic EL element of the present disclosure is an organic EL element having an inverted structure including a first hole injection layer containing a first organic material whose LUMO level is ?4 eV or less. The organic EL element further includes a second hole injection layer containing a second organic material. The second hole injection layer is disposed between the first hole injection layer and an anode. The roughness of a principal surface of the second hole injection layer on the side of the anode is smaller than the roughness of a principal surface of the first hole injection layer on the side of the second hole injection layer. L1, L2, and EA satisfy formula: ?EA?2 eV?L2?L1+2 eV, where the first organic material has a LUMO level L1, the second organic material has a LUMO level L2, and the anode has an electron affinity EA.

Abstract: Provided are a resin composition and a substrate that are capable of being used for manufacturing an electronic device including a transparent resin film having an excellent display property, a method of manufacturing such a resin composition and a method of manufacturing the electronic device using such a substrate and the electronic device. The resin composition of the present invention contains an aromatic polyamide, an aromatic multifunctional compound having two or more functional groups including a carboxyl group or an amino group, and a solvent dissolving the aromatic polyamide.

Abstract: Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.

Abstract: A substrate is provided with a main surface having an off angle of 5° or smaller relative to a reference plane. The reference plane is a {000-1} plane in the case of hexagonal system and is a {111} plane in the case of cubic system. A silicon carbide layer is epitaxially formed on the main surface of the substrate. The silicon carbide layer is provided with a trench having first and second side walls opposite to each other. Each of the first and second side walls includes a channel region. Further, each of the first and second side walls substantially includes one of a {0-33-8} plane and a {01-1-4} plane in the case of the hexagonal system and substantially includes a {100} plane in the case of the cubic system.

Abstract: An optoelectronic component may include a first organic functional layer structure, a second organic functional layer structure, and a charge generating layer structure between the first organic functional layer structure and the second organic functional layer structure. The charge generating layer structure includes a first electron-conducting charge generating layer, and a second electron-conducting charge generating layer. The second electron-conducting charge generating layer is formed from a single substance, and the substance of the first electron-conducting charge generating layer is a substance selected from the group of substances consisting of: HAT-CN, Cu(I)pFBz, NDP-2, NDP-9, Bi(III)pFBz, F16CuPc.

Abstract: A composition comprises a low molecular weight polyelectrolyte, a high molecular weight polymer, a light-emitting material and a salt. The viscosity average molecular weight of the high molecular weight polymer in at least one solvent is at least 5 times greater than the viscosity average molecular weight of the low molecular weight polyelectrolyte in the at least one solvent, and the high molecular weight polymer and the low molecular weight polymer are preferably different molecular weight polymers of the same polyelectrolyte material, such as polyethylene oxide. The composition is used to provide a light emitting layer (103) in a light-emitting electrochemical cell between an anode (101) for injecting positive charge carriers and a cathode (105) for injecting negative charge carriers.

Abstract: An electroluminescent element including a substrate and a layered part having a first electroconductive layer, a dielectric layer, a second electroconductive layer, a light-emitting layer and a third electroconductive layer. Plural contact holes that pass through at least the dielectric layer are disposed in the dielectric layer, the first and second electroconductive layers are electrically connected inside the contact holes, the refractive indices of the second electroconductive layer and light-emitting layer are 1.5 to 2.0 inclusive, the absolute value of the difference between the refractive indices, respectively, and the refractive index of the dielectric layer is 0.1 or more. Further, (i) the light-emitting surface side has at continuous light-emitting region, and (ii) the number of contact holes is 102 or more per a single light-emitting region and the ratio of the total surface area occupied by the plural contact holes is 0.1 or less.

Abstract: An electronic device including: a substrate; a bank formed above the substrate; a semiconductor layer formed within an aperture surrounded by the bank; and electrodes electrically connected to the semiconductor layer. An outline of the aperture in plan view includes a first straight edge, a second straight edge continuous with one end of the first edge via a first connector, and a straight third edge continuous with the other end of the first edge via a second connector. The area of a first connector region differs from the area of a second connector region, the first connector region being defined by a first imaginary straight line along the first edge, a second imaginary straight line along the second edge, and the first connector, and the second connector region being defined by a third imaginary straight line along the third edge, the first imaginary straight line, and the second connector.

Abstract: In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an outermost peripheral portion outside the principal surface, being a bevel portion tapered. Regions B and C are on the same plane (the principal surface), region B (mirror-surface portion) being the center portion of the principal surface, and region C a region in the principal surface edge portion surrounding region B. The principal surface has a plane orientation, and in region B, is mirror-surface-finished. Region B occupies most of the principal surface of this Si single crystal substrate, and a semiconductor device is manufactured therein. Region C (surface-roughened portion) has a plane orientation as with region B, however, region B is mirror-surface-finished, whereas region C is surface-roughened.

Abstract: A organic EL display panel and similar are provided so as to constrain a gradual increase in contact resistance between a common electrode and a power supply layer. In a panel including a substrate, a pixel electrode, a power supply layer formed with separation from the pixel electrode, a resin partition layer having an aperture over the power supply layer and over the pixel electrode, an organic light-emitting layer, a functional layer in contact with the organic light-emitting layer in the aperture and electrically connected to the power supply layer, and a common electrode, an inorganic film is disposed between the functional layer and side walls of an opening for the aperture over the power supply layer in the resin partition layer.

Abstract: According to one embodiment, a semiconductor light emitting element includes a first semiconductor layer of an n-type, a second semiconductor layer of a p-type, and a light emitting unit. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer includes a nitride semiconductor. The light emitting unit is provided between the first semiconductor layer and the second semiconductor layer. The light emitting unit includes a plurality of well layers stacked alternately with a plurality of barrier layers. The well layers include a first p-side well layer most proximal to the second semiconductor layer, and a second p-side well layer second most proximal to the second semiconductor layer. A localization energy of excitons of the first p-side well layer is smaller than a localization energy of excitons of the second p-side well layer.

Abstract: A method for manufacturing an organic electroluminescent element including, in the following order, an anode, a light-emitting layer, an electron injection layer, and a cathode, the method including the steps of: (A) forming the anode; (B) forming the light-emitting layer; (C) forming the electron injection layer; and (D) forming the cathode, in which the step (C) includes (i) applying an application liquid containing an ionic polymer to form a thin film, (ii) heating the thin film formed, (iii) storing a partially finished organic electroluminescent element obtained in (ii), and thereafter, (iv) heating the thin film again.

Abstract: An organic EL element manufacturing method includes coating ink which contains a functional layer forming material in a coating region which is configured by a pixel electrode and a partition wall which surrounds a periphery of the pixel electrode, where, in the coating ink, the ink is coated so as to satisfy the following expressions (1) to (3) in a case where a contact angle of the ink with respect to the side surface of the partition wall is set to ?bc and a contact angle with respect to a surface of the coating region where the ink is coated is set to ?lc.

Abstract: An optoelectronic component may include a carrier, a protective layer on or above the carrier, a first electrode on or above the protective layer, an organic functional layer structure on or above the first electrode, and a second electrode on or above the organic functional layer structure. The protective layer has a lower transmission than the carrier for electromagnetic radiation having a wavelength of less than approximately 400 nm at least in one wavelength range. The protective layer includes a glass.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a digital circuit which subjects an analog output signal output from the analog circuit to digital conversion; a second semiconductor substrate in which the remaining part of the analog circuit and the digital circuit are formed; and a substrate connection portion which connects the first and second semiconductor substrates to each other. The substrate connection portion transmits an analog signal which is generated by a part of the analog circuit of the first semiconductor substrate to the second semiconductor substrate.

Abstract: A method for manufacturing an organic electroluminescent display apparatus including a plurality of organic electroluminescent devices at least containing a fused ring compound having an anthracene skeleton, includes, in the following order: forming an organic electroluminescent layer on a substrate on which a first electrode has been formed; processing the organic electroluminescent layer; forming a second electrode on the organic electroluminescent layer; and providing a sealing member covering the organic electroluminescent layer, in which the organic electroluminescent layer is not exposed to an environment containing oxygen and including light of a wavelength shorter than a wavelength of a long wavelength edge of an absorption spectrum of the fused ring compound having an anthracene skeleton from forming the organic electroluminescent layer until completion of providing the sealing member.

Abstract: Provided is a method of manufacturing a substrate for a light emitting diode including a convex section forming step and a crystallization/crystallizing step. According to the method and the substrate for the light emitting diode, light extraction is significantly improved and nano to micron sized pattern, economically formed.

Abstract: Disclosed are a method of growing a nitride semiconductor, a method of manufacturing a template for semiconductor fabrication and a method of manufacturing a semiconductor light emitting device using the same. The method of manufacturing a semiconductor light emitting device includes: preparing a growth substrate having a defect aggregation region; growing a first nitride semiconductor layer over the growth substrate; growing a second nitride semiconductor layer over the first nitride semiconductor layer; growing a third nitride semiconductor layer over the second nitride semiconductor layer; growing an active layer over the third nitride semiconductor layer; and forming a second conductive type semiconductor layer over the active layer. Accordingly, semiconductor layers grown on the template can have excellent crystallinity.

Abstract: In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.

Abstract: In a gallium nitride based compound semiconductor light-emitting element including an active layer, the active layer includes a well layer 104 and a barrier layer 103, each of which is a semiconductor layer of which the growing plane is an m plane. The well layer 104 has a lower surface and an upper surface and has an In composition distribution in which the composition of In changes according to a distance from the lower surface in a thickness direction of the well layer 104. The In composition of the well layer 104 becomes a local minimum at a level that is defined by a certain distance from the lower surface and that portion of the well layer 104 where the In composition becomes the local minimum runs parallel to the lower surface.

Abstract: A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.

Abstract: The present disclosure provides a method for manufacturing a light-emitting diode, including: providing a substrate; forming a first semiconductor layer over the substrate; forming an active layer over the first semiconductor layer; forming a second semiconductor layer over the active layer; removing a portion of the second semiconductor layer and a portion of the active layer to expose a portion of the first semiconductor layer; conform to depositing a transparent conductive layer; forming a patterned mask layer over the transparent conductive layer; performing a wet etch process to remove a portion of the transparent conductive layer; performing a dry etch process to completely remove the portion of the transparent conductive layer not covered by the patterned mask layer; removing the patterned mask layer; and forming a first electrode and a second electrode.

Abstract: A method for reducing an internal pressure of a vacuum chamber while preventing impurity contamination within the vacuum chamber as much as possible. The method includes: rough pumping reducing an internal pressure of a vacuum chamber (1) by using a roughing pump (2), the roughing pump (2) being a mechanical pump that is capable of reducing the internal pressure of the vacuum chamber (1) to be less than 15 Pa; main pumping reducing the internal pressure of the vacuum chamber (1) by using a main pump (3) after the rough pumping, the main pump (3) being a non-mechanical pump. Transition from the rough pumping to the main pumping is performed when the internal pressure of the vacuum chamber (1) is no less than 15 Pa.

Abstract: A TFT and a fabricating method thereof are provided. The TFT includes an oxide semiconductor layer, a gate insulating layer, a gate, an oxygen-absorbing layer, an insulating layer, and conductive electrodes. The oxide semiconductor layer includes low-oxygen regions and a channel region between the low-oxygen regions. The gate insulating layer is disposed between the oxide semiconductor layer and the gate, and covers the channel region and exposes the low-oxygen regions. The oxygen-absorbing layer having first openings is disposed on the low-oxygen regions each having a first area exposed by the first opening. The insulating layer having second openings covers the oxygen-absorbing layer, the oxide semiconductor layer, and the gate. The low-oxygen region having a second area is exposed by the second opening within the first opening. The second area is smaller than the first area. The conductive electrodes in the second openings are in contact with the low-oxygen regions.

Abstract: A method of manufacturing a solar cell includes forming a buffer layer between an optical absorption layer and a window electrode layer. Forming the buffer layer includes depositing a metal material on the optical absorption layer, supplying a non-metal material on the optical absorption layer, supplying a gas material including oxygen atoms on the optical absorption layer, and reacting the metal material with the non-metal material. The gas material reacts with the metal material and the non-metal material to form a metal sulfur oxide on the optical absorption layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.

Abstract: A method of manufacturing a substrate for a display device includes forming a first organic layer on a base substrate; forming an inorganic layer on the first organic layer; and forming a second organic layer on the inorganic layer, where the second organic layer includes transition metal particles.

Abstract: A composition for use in an organic device, useful in producing an organic device, such as an organic electroluminescent element, having high operation stability, is a composition for use in an organic device that contains at least two cross-linking compounds, at least two of the cross-linking compounds having different numbers of cross-linking groups. A polymer film produced by forming a film of the composition for use in an organic device and then polymerizing the cross-linking compounds. An organic electroluminescent element that includes an anode and a cathode on a substrate and at least one organic layer disposed between the anode and the cathode, wherein at least one of the at least one organic layer is a layer that is produced by forming a film of the composition for use in an organic device and then polymerizing the cross-linking compounds.

Abstract: Ink compositions comprising polythiophenes and aprotic organic solvents that are formulated for inkjet printing the hole injecting layer (HIL) of an organic light emitting diode (OLED) are provided. Also provided are methods of inkjet printing the HILs using the ink compositions.