Abstract: A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film is deposited between one or more polysilicon layer in a MEMS device and the TEOS-based silicon oxide layer. This barrier material blocks diffusion of carbon into the polysilicon, thereby reducing accumulation of carbon on the polysilicon surfaces. By reducing the accumulation of carbon, the opportunity for stiction due to the presence of the carbon is similarly reduced.

Abstract: A process for forming a carbon nanotube field effect transistor (CNTFET) device includes site-specific nanoparticle deposition on a CNTFET that has one or more carbon nanotubes, a source electrode, a drain electrode, and a sacrificial electrode on a substrate with an interposed dielectric layer. The process includes control of PMMA removal and electrodeposition in order to select nanoparticle size and deposition location down to singular nanoparticle deposition. The CNTFET device resulting in ultra-sensitivity for various bio-sensing applications, including detection of glucose at hypoglycemic levels.

Abstract: An improved method for the fabrication of Micro-Electro-Mechanical Systems (MEMS), Nano-Electro-Mechanical Systems (NEMS), Photonics, Nanotechnology, 3-Dimensional Integration, Micro- and Nano-Fabricated Devices and Systems for both rapid prototyping development and manufacturing is disclosed. The method includes providing a plurality of different standardized and repeatable process modules usable in fabricating the devices and systems, defining a process sequence for fabricating a predefined one of the devices or systems, and identifying a series of the process modules that are usable in performing the defined process sequence and thus in fabricating the predefined device or system.

Abstract: The invention relates to an MEMS structure with a stack made of different layers and a spring-and-mass system varying in its thickness which is formed of the stack, and wherein, starting from a back side of the stack and the substrate, at laterally different positions, the substrate while leaving the first semiconductor layer, or the substrate, the first etch-stop layer and the first semiconductor layer are removed, and to a method for manufacturing such a structure.

Abstract: A micro machine may be in or less than the micrometer domain. The micro machine may include a micro actuator and a micro shaft coupled to the micro actuator. The micro shaft is operable to be driven by the micro actuator. A tool is coupled to the micro shaft and is operable to perform work in response to at least motion of the micro shaft.

Abstract: Methods for the fabrication of a Microelectromechanical Systems (“MEMS”) device are provided. In one embodiment, the MEMS device fabrication method includes forming a via opening extending through a sacrificial layer and into a substrate over which the sacrificial layer has been formed. A body of electrically-conductive material is deposited over the sacrificial layer and into the via opening to produce an unpatterned transducer layer and a filled via in ohmic contact with the unpatterned transducer layer. The unpatterned transducer layer is then patterned to define, at least in part, a primary transducer structure. At least a portion of the sacrificial layer is removed to release at least one movable component of the primary transducer structure. A backside conductor, such as a bond pad, is then produced over a bottom surface of the substrate and electrically coupled to the filled via.

Abstract: A MEMS-micro-mirror (30) is provided comprising a mirror body (50) that is rotatably arranged in a mirror frame (60) around a rotation axis (58) extending in a plane defined by the mirror body. The rotation axis extends through a first and a second mutually opposite end-portion (51, 53) of the mirror body. The mirror has a reflective first main surface (55) and opposite said first main surface a second main surface (57) provided with a first and a second pair of reinforcement beams. The pair of reinforcement beams (91a, 91b) extends from the first end-portion (51) in mutually opposite directions away from the rotation axis. The second pair of reinforcement beams (93a, 93b) extends from the second end-portion (53) in mutually opposite directions away from the rotation axis. Reinforcement beams of said first pair extend towards respective ones of said second pair.

Abstract: A MEMS device structure including a lateral electrical via encased in a cap layer and a method for manufacturing the same. The MEMS device structure includes a cap layer positioned on a MEMS device layer. The cap layer covers a MEMS device and one or more MEMS device layer electrodes in the MEMS device layer. The cap layer includes at least one cap layer electrode accessible from the surface of the cap layer. An electrical via is encased in the cap layer extending across a lateral distance from the cap layer electrode to the one or more MEMS device layer electrodes. An isolating layer is positioned around the electrical via to electrically isolate the electrical via from the cap layer.

Abstract: A method of manufacturing an integrated circuit including a MEMS device includes forming a structural layer above a substrate including at least one semiconductor device. The method includes forming an attachment to a first portion of the structural layer, the attachment having a thickness substantially greater than a thickness of the structural layer. In at least one embodiment of the method, the attachment is conjoined with the first portion of the structural layer and the first portion of the structural layer and the attachment are operative to mechanically move in unison. In at least one embodiment of the method, forming the attachment includes forming a patterned filler layer of a first material above the structural layer and forming a patterned conformal layer of a second material on the patterned filler layer. The filler layer has a thickness substantially greater than the thickness of the structural layer.

Abstract: The present disclosure relates to a pressure sensor having a nanostructure and a method for manufacturing the same. More particularly, it relates to a pressure sensor having a nanostructure attached on the surface of the pressure sensor and thus having improved sensor response time and sensitivity and a method for manufacturing the same. The pressure sensor according to the present disclosure having a nanostructure includes: a substrate; a source electrode and a drain electrode arranged on the substrate with a predetermined spacing; a flexible sensor layer disposed on the source electrode and the drain electrode; and a nanostructure attached on the surface of the flexible sensor layer and having nanosized wrinkles.

Abstract: A method for processing a wafer having microelectromechanical system structures at the first main surface includes applying a masking material at the second main surface and structuring the masking material to obtain a plurality of masked areas and a plurality of unmasked areas at the second main surface. The method further includes anisotropically etching the wafer from the second main surface at the unmasked areas to form a plurality of recesses. The masking material is then removed at least at some of the masked areas to obtain previously masked areas. The method further includes anisotropically etching the wafer from the second main surface at the unmasked areas and the previously masked areas to increase a depth of the recesses and reduce a thickness of the wafer at the previously masked areas.

Abstract: An object of the present invention is to suppress an error in the value detected by a pressure sensor, which may be caused when environmental temperature varies. A semiconductor substrate has a first conductivity type. A semiconductor layer is formed over a first surface of the semiconductor substrate. Each of resistance parts has a second conductivity type, and is formed in the semiconductor layer. The resistance parts are spaced apart from each other. A separation region is a region of the first conductivity type formed in the semiconductor layer, and electrically separates the resistance parts from each other. A depressed portion is formed in a second surface of the semiconductor substrate, and overlaps the resistance parts, when viewed planarly. The semiconductor layer is an epitaxial layer.

Abstract: A method of fabricating a microelectromechanical (MEMS) device includes bonding a transducer wafer to a substrate wafer along a bond interface. An unpatterned transducer layer included within the transducer wafer is patterned. A release etch process is then performed during which a sacrificial layer is exposed to a selected release etchant to remove at a least a portion of the sacrificial layer through the openings in the patterned transducer layer. A release etch stop layer is formed between the sacrificial layer and the bond interface prior to exposing the sacrificial layer to the release etchant. The release etch stop layer prevents the ingress of the selected release etchant into the region of the MEMS device containing the bond interface during the release etch process.

Abstract: A method for manufacturing a three-dimensionally shaped comb-tooth electret electrode, provided with positive ions, includes: forming a three-dimensional movable comb-tooth electrode and a three-dimensional fixed comb-tooth electrode from an Si substrate; contacting a vapor including ions thereto, and forming an oxide layer including ions upon surfaces of the comb-tooth electrodes with heat applied thereto; and applying a voltage between the movable electrode and the fixed electrode with heat applied thereto, and thereby causing the ions included in the oxide layer to shift to a surface of the oxide layer; wherein, the voltage between the movable electrode and the fixed electrode is changed, so that the operation of each of the comb-teeth of the movable electrode being alternatingly pulled in against two opposed comb-teeth of the fixed electrode is repeated, and the pulling in voltage and the pulled-in state release voltage are gradually increased.

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower wiring layer on a substrate. The method further includes forming a plurality of discrete wires from the lower wiring layer. The method further includes forming an electrode beam over the plurality of discrete wires. The at least one of the forming of the electrode beam and the plurality of discrete wires are formed with a layout which minimizes hillocks and triple points in subsequent silicon deposition.

Abstract: Hybrid integrated components including an MEMS element and an ASIC element are described, whose capacitor system allows both signal detection with comparatively high sensitivity and sensitive activation of the micromechanical structure of the MEMS element. The hybrid integrated component includes an MEMS element having a micromechanical structure which extends over the entire thickness of the MEMS substrate. At least one structural element of this micromechanical structure is deflectable and is operationally linked to at least one capacitor system, which includes at least one movable electrode and at least one stationary electrode. Furthermore, the component includes an ASIC element having at least one electrode of the capacitor system. The MEMS element is mounted on the ASIC element, so that there is a gap between the micromechanical structure and the surface of the ASIC element.

Abstract: A micromechanical component formed from, a substrate (100) having a first cavity (112) and a second cavity (113), a first micromechanical structure (117) arranged in the first cavity (112), and a second micromechanical structure (118) arranged in the second cavity (113). The first cavity (112) and the second cavities having respective first and second gas pressures having different values. The first gas pressure is provided by a closed configuration of the first cavity (112) and a first channel (115) opens into the second cavity (113), and the second gas pressure is adjustable via the first channel (115).

Abstract: An electromechanical transducer includes a first electromagnetic element and a second electromagnetic element, such as electrodes, disposed opposite to each other with a sealed cavity therebetween. The sealed cavity is formed by removing a sacrifice layer and then performing sealing. A sealing portion is formed by superposing a film of a hardened second sealing material that has fluidity at normal temperature on a film of a first sealing material that does not have fluidity at normal temperature.

Abstract: A micro-electromechanical system (MEMS) device can include a substrate and a first beam suspended relative to a substrate surface. The first beam can include a first portion and a second portion that are separated by an isolation joint made of an insulative material. The first and second portions can each include a first semiconductor and a first dielectric layer. The MEMS device can also include a second beam suspended relative to the substrate surface. The second beam can include a second semiconductor and a second dielectric layer to promote curvature of the second beam. The MEMS device can also include a third beam suspended relative to the substrate surface. The third beam consists essentially of a first material. The second beam is configured to move relative to the third beam in response to an acceleration along an axis perpendicular to the surface of the substrate.

Abstract: In at least one embodiment of the invention, a method of manufacturing an integrated circuit including a microelectromechanical system (MEMS) device includes forming a first structural layer above at least one semiconductor device formed on a substrate. The method includes forming a second structural layer above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. The MEMS device comprises at least one portion of at least one of the first and second structural layers. In at least one embodiment of the invention, the method is carried out at one or more temperatures less than a tolerable threshold temperature for the at least one semiconductor device.

Abstract: A method for fabrication of capacitive environment sensors is provided in which the sensor elements are integrated in a CMOS structure with electronics through the use of complementary metal oxide semiconductor (CMOS) fabrication methods. Also provided are environment sensors fabricated, for example, by the method, and a measurement system using the environment sensors fabricated by the method. The described method includes etching away one of the metal layers in a CMOS chip to create a cavity. This cavity is then filled with an environment-sensitive dielectric material to form a sensing capacitor between plates formed by the metal adhesion layers or an array of contacts from other metal layers of the CMOS structure. This approach provides improved sensing capabilities in a system that is easily manufactured.

Abstract: Semiconductor nano pressure sensor devices having graphene membrane suspended over open cavities formed in a semiconductor substrate. A suspended graphene membrane serves as an active electro-mechanical membrane for sensing pressure, which can be made very thin, from about one atomic layer to about 10 atomic layers in thickness, to improve the sensitivity and reliability of a semiconductor pressure sensor device.

Abstract: A package is made of a transparent substrate having an interferometric modulator and a back plate. A non-hermetic seal joins the back plate to the substrate to form a package, and a desiccant resides inside the package. A method of packaging an interferometric modulator includes providing a transparent substrate and manufacturing an interferometric modulator array on a backside of the substrate. A back plate includes a curved portion relative to the substrate. The curved portion is substantially throughout the back plate. The back plate is sealed to the backside of the substrate with a back seal in ambient conditions, thereby forming a package.

Abstract: An inertial sensor includes a substrate, a mass element, and a detecting device for detecting a movement of the mass element relative to the substrate, the mass element being coupled to the substrate with the aid of a spring device, wherein the spring device has a T-shaped cross-sectional profile. A method for manufacturing an inertial sensor is also disclosed.

Abstract: An embodiment includes an oscillator comprising an amplifier formed on a substrate; a multiple gate resonant channel array, formed on the substrate, including: (a) transistors including fins, each of the fins having a channel between source and drain nodes, coupled to common source and drain contacts; and (b) common first and second tri-gates coupled to each of the fins and located between the source and drain contacts; wherein the fins mechanically resonate at a first frequency when one of the first and second tri-gates is periodically activated to produce periodic downward forces on the fins. Other embodiments include a non planar transistor with a channel between the source and drain nodes and a tri-gate on the fin; wherein the fin mechanically resonates when the first tri-gate is periodically activated to produce periodic downward forces on the fin. Other embodiments are described herein.

Abstract: Provided is a strain sensing device using reduced graphene oxide (R-GO). The strain sensing device includes a flexible substrate, a gate electrode formed on the flexible substrate, a gate insulating layer configured to cover the gate electrode and include a part formed of a flexible material, an active layer formed of R-GO for sensing a strain, on the gate insulating layer, and a source and drain electrode formed on the active layer.

Abstract: According to one embodiment, a MEMS device including a first electrode provided on a support substrate, a second electrode opposed to the first electrode, having at least one end part overlapping the first electrode, and able to move in a direction it is opposed to the first electrode, and beam parts provided on the support substrate and supporting the second electrode. The surface of that part of the first electrode, which opposes the end part of the second electrode, is set at a lower level than the surface of that part of the second electrode, which opposes a center part of the second electrode.

Abstract: A method for producing a device including plural cavities defined between a substrate in at least one given semiconductor material and a membrane resting on a top of insulating posts projecting from the substrate, the method allowing a height of the cavity or cavities to be adapted independently of a height of the insulating posts and allowing cavities of different heights to be formed.

Abstract: The present application is directed to a reservoir for use with a micro-electromechanical device having a first surface area to be lubricated. The reservoir comprises a solid component with a porous structure having a second surface area. The second surface area is greater than the first surface area. The reservoir also comprises a lubricant capable of reversibly reacting with either the solid component or the first surface area of the microelectromechanical device.

Abstract: According to one embodiment, a MEMS device comprises a first electrode provided on a support substrate, a burying insulating film formed at the sides of the first electrode, and a second electrode opposed to the first electrode, having ends extending outside the ends of the first electrode and able to move in the direction it is opposed to the first electrode.

Abstract: A MEMS apparatus comprising composite vibrating unit and the manufacturing method thereof are disclosed. The vibrating unit includes a stiffness element on which a first material is disposed. A second material being a conductive material is disposed on the first material and is extended to the stiffness element to remove electric charge on first material. When a temperature is changed, a variation direction of a Young's modulus of the first material is opposite to a variation direction of a Young's modulus of the stiffness element. The unique attributes above allow vibrating unit of the MEMS apparatus such as resonator and gyroscope to have stable resonance frequency against the change of temperature.

Abstract: A microelectromechanical systems (MEMS) device (58) includes a structural layer (78) having a top surface (86). The top surface (86) includes surface regions (92, 94) that are generally parallel to one another but are offset relative to one another such that a stress concentration location (90) is formed between them. Laterally propagating shallow surface cracks (44) have a tendency to form in the structural layer (78), especially near the joints (102) between the surface regions (92, 94). A method (50) entails fabricating (52) the MEMS device (58) and forming (54) trenches (56) in the top surface (86) of the structural layer (78) of the MEMS device (58). The trenches (56) act as a crack inhibition feature to largely prevent the formation of deep cracks in structural layer (78) which might otherwise result in MEMS device failure.

Abstract: The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided.

Abstract: In an integrated MEMS device, moving silicon parts with smooth surfaces can stick together if they come into contact. By roughening at least one smooth surface, the effective area of contact, and therefore surface adhesion energy, is reduced and hence the sticking force is reduced. The roughening of a surface can be provided by etching the smooth surfaces in gas, plasma, or liquid with locally non-uniform etch rate. Various etch chemistries and conditions lead to various surface roughness.

Abstract: Embodiments of the present disclosure include MEMS devices and methods for forming MEMS devices. An embodiment is a method for forming a microelectromechanical system (MEMS) device, the method including forming a MEMS wafer having a first cavity, the first cavity having a first pressure, and bonding a carrier wafer to a first side of the MEMS wafer, the bonding forming a second cavity, the second cavity having a second pressure, the second pressure being greater than the first pressure. The method further includes bonding a cap wafer to a second side of the MEMS wafer, the second side being opposite the first side, the bonding forming a third cavity, the third cavity having a third pressure, the third pressure being greater than the first pressure and less than the second pressure.

Abstract: An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.

Abstract: A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.

Abstract: A micromechanical structure includes a substrate, a micromechanical functional structure, and a conductor track arrangement. The substrate has a top side, and the micromechanical functional structure is formed in the substrate on the top side. The conductor track arrangement is formed above the top side of the substrate, and the conductor track arrangement includes at least two insulation layers of non-conductive material and a conductor track layer of conductive material located between the at least two insulation layers.

Abstract: Methods of forming integrated MEMS structures are described. Those methods and structures may include forming at least one MEMS structure on a first substrate, forming a first bonding layer on a top surface of the first substrate, and then coupling the first bonding layer disposed on the first substrate to a second substrate, wherein the second substrate comprises a device layer. The bonding may comprise a layer transfer process, wherein an integrated MEMS device is formed.

Abstract: In a method of manufacturing a semiconductor integrated circuit device having an MEMS element over a single semiconductor chip, the movable part of the MEMS element is fixed before the formation of a rewiring. After formation of the rewiring, the wafer is diced. Then, the movable part of the MEMS element is released by etching the wafer.

Abstract: Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.

Abstract: Methods and apparatus for MEMS release are disclosed. A method is described including providing a substrate including at least one MEMS device supported by a sacrificial layer; performing an etch in solution to remove the sacrificial layer from at least one MEMS device; immersing the substrate including the at least one MEMS device in an organic solvent; and while the substrate is immersed in the organic solvent, removing water from the organic solvent until the water remaining in the organic solvent is less than a predetermined threshold. An apparatus is disclosed for performing the methods. Additional alternative methods are disclosed.

Abstract: An integrated circuit device includes a dielectric layer disposed onto a first substrate, the dielectric layer having a sacrificial cavity formed therein. The circuit also includes a membrane layer formed onto the dielectric layer and suspended over the sacrificial cavity, and a capping substrate bonded to the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer.

Abstract: A sensor manufacturing method and a microphone structure produced by using the same. Wherein, thermal oxidation method is used to form a sacrifice layer of an insulation layer on a silicon-on-insulator (SOI) substrate or a silicon substrate, to fill patterned via in said substrate. Next, form a conduction wiring layer on the insulation layer. Since the conduction wiring layer is provided with holes, thus etching gas can be led in through said hole, to remove filling in the patterned via, to obtain an MEMS sensor. Or after etching of the conduction wiring layer, deep reactive-ion etching is used to etch the silicon substrate into patterned via, to connect the substrate electrically to a circuit chip. The manufacturing process is simple and the technology is stable and mature, thus the conduction wiring layer and the insulation layer are used to realize electrical isolation.

Abstract: A dynamic quantity sensor device includes: first and second dynamic quantity sensors having first and second dynamic quantity detecting units; and first and second substrates, which are bonded to each other to provide first and second spaces. The first and second units are air-tightly accommodated in the first and second spaces, respectively. A SOI layer of the first substrate is divided into multiple semiconductor regions by trenches. First and second parts of the semiconductor regions provide the first and second units, respectively. The second part includes: a second movable semiconductor region having a second movable electrode, which is provided by a sacrifice etching of the embedded oxide film; and a second fixed semiconductor region having a second fixed electrode. The second sensor detects the second dynamic quantity by measuring a capacitance between the second movable and fixed electrodes, which is changeable in accordance with the second dynamic quantity.

Abstract: A liquid crystal display device having a touch sensor embedded therein is disclosed. The present invention includes a liquid crystal layer between first and second substrates, a pixel on the second substrate to apply a horizontal electric field to the liquid crystal layer, a touch sensor on the second substrate, the touch sensor detecting a touch by forming a touch capacitor with a touch object for touching the first substrate, and a readout line outputting a sensing signal from the touch sensor. The touch sensor includes a sensing electrode on the second substrate to form the sensing capacitor with the touch object, first and second sensor gate lines, a first sensor thin film transistor supplying a sensing driving voltage to the sensing electrode in response to a control of the first sensor gate line, and a second sensor thin film transistor supplying electric charges of the sensing electrode as the sensing signal in response to a control of the second sensor gate line.

Abstract: The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed from the first surface. Thus, a top surface of the bond pad may lie below the plane of the top surface of the substrate. A device with recessed connective element(s) (e.g., bond pad) is also described. In further embodiments, a protective layer is formed on the recessed connective element during dicing of a substrate.

Abstract: One embodiment discloses an apparatus integrating a microelectromechanical system device with a circuit chip which includes a circuit chip, a microelectromechanical system device, a sealing ring, and a lid. The circuit chip comprises a substrate and a plurality of metal bonding areas. The substrate has an active surface with electrical circuit area, and the metal bonding areas are disposed on the active surface and electrically connected to the electrical circuits. The microelectromechanical system device comprises a plurality of bases and at least one sensing element. The bases are connected to at least one of the metal bonding areas. The at least one sensing element is elastically connected to the bases. The sealing ring surrounds the bases, and is connected to at least one of the metal bonding areas. The lid is opposite to the active surface of the circuit chip, and is connected to the sealing ring to have a hermetic chamber which seals the sensing element and the active surface of the circuit chip.

Abstract: A catheter die is provided and includes a device layer defining a cavity and including a piezoresistive pressure sensor operably disposed proximate to the cavity and an insulator having an opening and being disposed on an upper surface of the device layer such that a portion of the piezoresistive pressure sensor is exposed through the opening. The catheter die further includes an insulation layer bonded to a lower surface of the device layer and first and second bond pads, the first bond pad being electrically coupled to the portion of the piezoresistive pressure sensor via the opening and the second bond pad being disposed on the insulation layer.

Abstract: A semiconductor device includes a substrate. At least one transducer is provided on the substrate. The at least one transducer includes at least one electrically conductive circuit element. A dielectric layer is deposited onto the substrate over the at least one transducer. A surface charge mitigation layer formed of a conductive material is deposited onto the outer surface of the dielectric layer with the surface charge mitigation layer being electrically coupled to ground potential. The surface charge mitigation layer may be deposited to a thickness of 10 nm or less, and the transducer may comprise a microelectromechanical systems (MEMS) device, such as a MEMS pressure sensor. The surface charge mitigation layer may be patterned to include pores to enhance the flexibility as well as the optical properties of the mitigation layer.