Abstract: Provided are: a thermoelectric conversion body that has high electrical conductivity, achieving high thermoelectric conversion efficiency when used in a thermoelectric conversion module, and is less susceptible to warpage during manufacture; a method for manufacturing the same; and a thermoelectric conversion module using the same. A thermoelectric conversion body that is a fired product of a composition containing a thermoelectric semiconductor material and a heat resistant resin, wherein, with the heat resistant resin being subjected to temperature elevation and a weight of the heat resistant resin at 400° C. being defined as 100%, a temperature at which the heat resistant resin undergoes a further 5% reduction in weight is 480° C. or lower; a thermoelectric conversion module including the thermoelectric conversion body; and a method for manufacturing the thermoelectric conversion body.

Abstract: In a general aspect, an electronic device assembly can include a semiconductor device assembly including a ceramic substrate; a patterned metal layer disposed on a first surface of the ceramic substrate; and a semiconductor die disposed on the patterned metal layer. The electronic device assembly can also include a thermal dissipation appliance. Ceramic material of a second surface of the ceramic substrate can be direct-bonded to a surface of the thermal dissipation appliance. The second surface of the ceramic substrate can be opposite the first surface of the ceramic substrate.

Abstract: A product includes an array of cold spray-formed structures. Each of the structures is characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of a raw material from which the structure is formed, and essentially the same functional properties as the raw material. A product includes a cold spray-formed structure characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of a raw material from which the structure is formed, and essentially the same functional properties as the raw material.

Abstract: A thermoelectric conversion element includes a p-type thermoelectric converter, an n-type thermoelectric converter, a first electrode, a second electrode, and a third electrode. One end of the p-type converter is electrically connected to one end of the n-type converter. The other end of the p-type converter is electrically connected to the second electrode, and the other end of the n-type converter is electrically connected to the third electrode. The p-type converter includes a first phononic crystal layer having a first phononic crystal structure including regularly arranged first through holes. The n-type converter includes a second phononic crystal layer having a second phononic crystal structure including regularly arranged second through holes. The through direction of the first through holes is a direction extending between the ends of the p-type converter. The through direction of the second through holes is a direction extending between the ends of the n-type converter.

Abstract: A component for a vehicle interior may comprise a light guide to allow light transmission from a light source for a user interface, and a cover to cover the light guide. The user interface may be presented at the cover. The cover may comprise a depression in an inner surface of the cover and the light guide may comprise a projection comprising a light-transmissive resin fit within the depression. The projection may comprise an icon to be presented at the user interface when illuminated, and to be hidden by the cover when not illuminated. The user interface may comprise a light display and an input device connected to a sensor. The icon may comprise an image. The cover thickness may be greater than the projection height. The component may comprise a steering wheel, console, floor console, center console, instrument panel, door panel, dashboard, display, armrest, or cockpit.

Abstract: Provided is a long-wave infrared (LWIR) sensor including a substrate, a magnetic resistance device on the substrate, and an LWIR absorption layer on the magnetic resistance device, wherein a resistance of the magnetic resistance device changes based on temperature, and wherein the LWIR absorption layer is configured to absorb LWIR rays and generate heat.

Abstract: An optical sensor includes a support layer, a thermoelectric conversion material portion disposed on the support layer and including a strip-shaped first material layer that converts thermal energy into electrical energy and a strip-shaped second material layer that is electrically conductive, and a light absorbing film disposed on the thermoelectric conversion material portion to form a temperature difference in a longitudinal direction of the first material layer. The first material layer includes a first region and a second region. The second material layer includes a third region and a fourth region connected to the second region. The optical sensor further includes a first electrode electrically connected to the first region, and a second electrode disposed apart from the first electrode and electrically connected to the third region. The first material layer has a width, perpendicular to the longitudinal direction, of 0.1 ?m or more.

Abstract: A semiconductor device includes a device cell including a gate component configured to receive a gate control signal and a temperature sensing component adjacent to the device cell. Each of the temperature sensing component and the gate component includes polycrystalline silicon.

Abstract: The thermoelectric conversion element according to the present disclosure comprises a first electrode, a second electrode, a first intermediate layer, a second intermediate layer, and a thermoelectric conversion layer. The first intermediate layer is provided between the thermoelectric conversion layer and the first electrode. The first intermediate layer is in contact with the thermoelectric conversion layer. The first electrode is in contact with the first intermediate layer. The second intermediate layer is provided between the thermoelectric conversion layer and the second electrode. The second intermediate layer is in contact with the thermoelectric conversion layer. The second electrode is in contact with the second intermediate layer. The first electrode and the second electrode are composed of a CuZn alloy. The thermoelectric conversion layer is composed of a thermoelectric conversion material containing Mg.

Abstract: The disclosure is related to structures and method of making thermoelectric devices. The structures include an electrically and thermally nonconductive substrate with cylindrical or frustum-shaped tunnels. The tunnels may be filled with thermally and electrically conductive materials that resist diffusion. The structures include n-type and p-type materials, in homogeneous form or alternating with interlayers to block phonon conduction between layers of thermoelectric materials. The tunnels are individually associated with either n-type or p-type thermoelectric materials and connected in pairs to form alternating conductors on both sides of the substrate. The structures may also be coated with layers of gold and nickel and have thermoelectric materials deposited in the tunnels. The tunnels may be partially or fully capped with sintered nano-silver or solder.

Abstract: A system with a detector array, a processor unit and a signal interface. The detector array includes a plurality of bolometric measuring cells and a base body. Each measuring cell is configured to detect infrared radiation and to transmit a measurement signal, which is representative of the readings of the measuring cells, to the processor unit. The processor unit is configured to determine a body heat stored by the base body, to determine a predictive value compensated according to the time delay of the respective measuring cell for each current reading, to determine a temperature value corrected according to the measurement error for each current predictive value, and to determine a thermal image based on the current temperature values, allowing an image signal representing the thermal image to be sent from the signal interface. A corresponding method is also provided.

Abstract: An electronic device includes a light-receiving device configured to receive solar light, a loop-type heat pipe to which heat is input from the light-receiving device and in which an operating fluid is enclosed in a loop-shaped flow path, and a thermoelectric conversion element configured to convert a temperature difference of the loop-type heat pipe into electric power.

Abstract: Provided is a method for forming a chalcogenide thin film, the method including forming a chalcogen element-containing film on a carrier substrate, disposing the chalcogen element-containing film on a silicon wafer, wherein the surface of the silicon wafer and the surface of the chalcogen element-containing film are in contact with each other, performing heat treatment on the silicon wafer and the chalcogen element-containing film at least one time, and removing the carrier substrate. The silicon wafer has a crystal plane of (111).

Abstract: Disclosed is a thermoelectric generator including a heat source contact, a heat sink contact, and a plurality of co-axial fibers. Each of the co-axial fibers include a core and a cladding disposed about the core. The plurality of co-axial fibers extend from the heat source contact to the heat sink contact. Thermoelectric generators are disclosed including hollow core doped silicon carbide fibers and doubly clad PIN junction fibers. Methods for forming direct PN junctions between oppositely doped fibers are additionally disclosed.

Abstract: A high-performance Microbolometer that incorporates vanadium oxide (VOx) along with carbon nanotubes (CNTs) or graphene. This Microbolometer, which uses a microbridge comprising Si3N4 and VOx, provides low noise and high dynamic range longwave infrared (LWIR) band detection. Addition of CNTs/graphene provides a high level of performance [low 1/f noise, noise equivalent temperature difference (NETD), and thermal time constant] due to the high temperature coefficient of resistance (TCR) of these materials.

Abstract: An apparatus comprises a phase-change material, a first electrode at a first end of the phase-change material, a second electrode at a second end of the phase-change material, and a heating element coupled to a least a given portion of the phase-change material between the first end and the second end. The apparatus also comprises a first input terminal coupled to the heating element, a second input terminal coupled to the heating element, and an output terminal coupled to the second electrode.

Abstract: An electronics system has a board with a thermal interface having an exposed surface. A thermoelectric device is placed against the thermal interface to heat the board. Heat transfers through the board from a first region where the thermal interface is located to a second region where an electronics device is mounted. The electronics device has a temperature sensor that detects the temperature of the electronics device. The temperature of the electronics device is used to calibrate an accelerometer and a gyroscope in the electronics device. Calibration data includes a temperature and a corresponding acceleration offset and a corresponding angle offset. A field computer simultaneously senses a temperature, an acceleration and an angle from the temperature sensor, accelerometer and gyroscope and adjusts the measured data with the offset data at the same temperature. The field computer provides corrected data to a controlled system.

Abstract: Provided herein is a tungsten-rhenium composite thin film thermocouple based on a surface micropillar array with gas holes. A tungsten-rhenium thin film thermocouple is arranged on a surface of a flat alumina ceramic substrate. Two tails of the tungsten-rhenium thin film thermocouple are respectively connected to a lead wire. A surface of the tungsten-rhenium thin film thermocouple is arrayed with a plurality of micron alumina micropillars to form an alumina micropillar array. Air is filled between the micron alumina micropillars to form the gas holes. The flat alumina ceramic substrate, the tungsten-rhenium thin film thermocouple and the alumina micropillar array form a three-layered laminated structure.

Abstract: A chip of thermoelectric conversion material may have a concave portion and may be capable of realizing high joining properties to an electrode. Such a chip of thermoelectric conversion material may have a concave on at least one surface of the chip of thermoelectric conversion material. The shape of such chips of may be rectangular parallelepiped, cubic, and/or columnar shape.

Abstract: A method is provided for producing an electrically-powered device and/or component that is embeddable in a solid structural component, and a system, a produced device and/or a produced component is provided. The produced electrically powered device includes an attached autonomous electrical power source in a form of a unique, environmentally-friendly structure configured to transform thermal energy at any temperature above absolute zero to an electric potential without any external stimulus including physical movement or deformation energy. The autonomous electrical power source component provides a mechanism for generating renewable energy as primary power for the electrically-powered device and/or component once an integrated structure including the device and/or component is deployed in an environment that restricts future access to the electrical power source for servicing, recharge, replacement, replenishment or the like.

Abstract: A semiconductor structure may include a heater surrounded by a second dielectric layer, a projection liner on top of the second dielectric layer, and a phase change material layer above the projection liner. A top surface of the projection liner may be substantially flush with a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.

Abstract: A thermoelectric material including a thermoelectric element including thermoelectric inorganic material represented by Chemical Formula 1; and a conduction path in contact with a surface of the thermoelectric element, wherein the conduction path is formed of a conductive material having electrical conductivity of greater than or equal to about 1,000 Siemens per centimeter BixSb(2-x)Te(3-y-z)SeySz?? Chemical Formula 1 wherein 0<x?2, 0?y?3, 0?z?3, and 0?y+z?3.

Abstract: The present invention relates to a thermoelectric module, and a thermoelectric module according to an exemplary embodiment of the present invention includes: a plurality of thermoelectric elements that are disposed between a heat transmission member and a cooling member; and a first electrode layer and a second electrode layer that are respectively disposed between the heat transmission member and the plurality of thermoelectric elements and between the cooling member and the plurality of thermoelectric elements, wherein the plurality of thermoelectric elements may include P-type thermoelectric elements and N-type thermoelectric elements, and a P-type thermoelectric element and an N-type thermoelectric element that neighbor each other may have different heights, and one electrode layer selected from among the first electrode layer and the second electrode layer formed throughout the P-type thermoelectric element and the N-type thermoelectric element that neighbor each other may have at least two bent portions

Abstract: A flow-rate sensor is provided with a lead frame, a semiconductor chip that is disposed on one surface of the lead frame, and in which a diaphragm including a void portion on the lead frame side is formed, a flow rate detecting unit that is formed on the one surface including the diaphragm of the semiconductor chip, and resin that includes a flow passage opening portion exposing at least a portion of the flow rate detecting unit formed on the diaphragm, and covers the lead frame and the semiconductor chip. A lower side resin portion of the resin covering another surface side of the lead frame, on an opposite side to the one surface side thereof, has a thinned portion that is thinner than a periphery thereof in a region facing a peripheral edge portion of the diaphragm.

Abstract: According to one embodiment of the present invention, a thermoelectric leg comprises: a thermoelectric material layer comprising Bi and Te; a first metal layer and a second metal layer respectively arranged the thermoelectric material layer; a first adhesive layer arranged between the thermoelectric material layer and the first metal layer and comprising the Te, and a second adhesive layer arranged between the thermoelectric material layer and the second metal layer and comprising the Te; and a first plating layer arranged between the first metal layer and the first adhesive layer, and a second plating layer arranged between the second metal layer and the second adhesive layer, wherein the thermoelectric material layer is arranged between the first metal layer and the second metal layer, the amount of the Te is higher than the amount of the Bi in the thermoelectric material layer.

Abstract: At least one of the present embodiments generally relates to an apparatus and a method for enhancing the figure of merit (zT) in composite thermoelectric materials using aerogel such as e.g., silicate/silica aerogel, carbon aerogel, chalcogenide aerogel and metal oxide aerogel. For example, the present embodiments provide apparatuses and methods for the addition of aerogels to two commonly used p and n type thermoelectric materials and thereby enhancing their thermoelectric figure of merits to record levels.

Abstract: A temperature sensitive ink composition including a metal oxide nanoparticle; a binder; a solvent; an optional dispersant; and an optional surfactant; wherein the ink composition is a thermistor ink that exhibits a change in resistance which is dependent on temperature. A process for preparing the ink composition. A process including depositing the ink composition onto a substrate to form deposited features; and optionally, heating the deposited features on the substrate to form temperature sensitive features on the substrate, wherein depositing can include ink jet printing or aerosol jet printing.

Abstract: A method for forming a unique, environmentally-friendly micron scale autonomous electrical power source is provided in a configuration that generates renewable energy for use in electronic systems, electronic devices and electronic system components. The configuration includes a first conductor with a facing surface conditioned to have a low work function, a second conductor with a facing surface having a comparatively higher work function, and a dielectric layer, not more than 200 nm thick, sandwiched between the respective facing surfaces of the first conductor and the second conductor. The autonomous electrical power source formed according to the disclosed method is configured to harvest minimal thermal energy from any source in an environment above absolute zero.

Abstract: Various techniques are provided for implementing an infrared imaging system. In one example, a system includes a focal plane array (FPA). The FPA includes an array of infrared sensors adapted to image a scene. The FPA also includes a bias circuit adapted to provide a bias voltage to the infrared sensors. The bias voltage is selected from a range of approximately 0.2 volts to approximately 0.7 volts. The FPA also includes a read out integrated circuit (ROIC) adapted to provide signals from the infrared sensors corresponding to captured image frames. Other implementations are also provided.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 ?m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

Abstract: A method for forming a unique, environmentally-friendly micron scale autonomous electrical power source is provided in a configuration that generates renewable energy for use in electronic systems, electronic devices and electronic system components. The configuration includes a first conductor with a facing surface conditioned to have a low work function, a second conductor with a facing surface having a comparatively higher work function, and a dielectric layer, not more than 200 nm thick, sandwiched between the respective facing surfaces of the first conductor and the second conductor. The autonomous electrical power source formed according to the disclosed method is configured to harvest minimal thermal energy from any source in an environment above absolute zero.

Abstract: Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8±0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.

Abstract: Disclosed is a reflector apparatus comprising a reflector and an array of thermoelectric heat pumps each having a first end proximal to and in thermal contact with the reflector and having a second end distal from the reflector, a lithography tool having such a reflector apparatus, and a method of using the same.

Abstract: An insulating substrate is prepared. In this substrate, plural via holes penetrating in a thickness direction are filled with a conductive paste. This paste is produced by adding an organic solvent to a powder of an, and by processing the power of the alloy to a paste. The substrate is then pressed from a front surface and a back surface of the substrate, while being heated. The conductive paste is solid-phase sintered and interlayer connecting members are formed. A front surface protective member is disposed on a front surface of the substrate and a back surface protective member is disposed on a back surface of the substrate, and a laminate is formed. The laminate is integrated by a lower pressure being applied while heating at a lower temperature, compared to the temperature and pressure in the process of forming the interlayer connecting members.

Abstract: A manufacturing method of a semiconductor device includes: depositing a thin film semiconductor layer on a semiconductor substrate with an insulating film therebetween, the insulating film having been formed on a surface of the semiconductor substrate; ion-implanting first impurity ions into the thin film semiconductor layer under a condition where a range of the first impurity ions becomes smaller than a film thickness of the thin film semiconductor layer when being deposited; and selectively ion-implanting second impurity ions into the thin film semiconductor layer with a dose quantity more than a dose quantity of the first impurity ions, in which a diode for detecting temperature is formed by a region into which the first impurity ions have been implanted and a region into which the second impurity ions have been implanted in the thin film semiconductor layer.

Abstract: Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer.

Abstract: Solid state thermoelectric energy conversion devices can provide electrical energy from heat flow, creating energy, or inversely, provide cooling through applying energy. Thick film methods are applied to fabricate thermoelectric device structures using microstructures formed through deposition and subsequent thermal processing conditions. An advantageous coincidence of material properties makes possible a wide variety of unique microstructures that are easily applied for the fabrication of device structures in general. As an example, a direct bond process is applied to fabricate thermoelectric semiconductor thick films on substrates by printing and subsequent thermal processing to form unique microstructures which can be densified. Bismuth and antimony telluride are directly bonded to flexible nickel substrates.

Abstract: A microbolometer includes a micro-bridge structure for uncooling infrared or terahertz detectors. The thermistor and light absorbing materials of the micro-bridge structure are the vanadium oxide-carbon nanotube composite film formed by one-dimensional carbon nanotubes and two-dimensional vanadium oxide film. The micro-bridge is a three-layer sandwich structure consisting of a layer of amorphous silicon nitride base film as the supporting and insulating layer of the micro-bridge, a layer or multi-layer of vanadium oxide-carbon nanotube composite film in the middle of the micro-bridge as the heat sensitive and light absorbing layer of the microbolometer, and a layer of amorphous silicon nitride top film as the stress control layer and passivation of the heat sensitive film. The microbolometer and method for manufacturing the same can overcome the shortcomings of the prior art, improve the performance of the device, reduce the cost of raw materials and is suitable for large-scale industrial production.

Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 ??·cm2.

Abstract: A method of fabricating a thermoelectric device includes providing a substrate having a plurality of inclined growth surfaces protruding from a surface thereof. Respective thermoelectric material layers are grown on the inclined growth surfaces, and the respective thermoelectric material layers coalesce to collectively define a continuous thermoelectric film. A surface of the thermoelectric film opposite the surface of the substrate may be substantially planar, and a crystallographic orientation of the thermoelectric film may be tilted at an angle of about 45 degrees or less relative to a direction along a thickness thereof. Related devices and fabrication methods are also discussed.

Abstract: A structure and method for at least one array of nanowires partially embedded in a matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first segment associated with a first end, a second segment associated with a second end, and a third segment between the first segment and the second segment. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. The third segment is substantially surrounded by the one or more fill materials. The first segment protrudes from the one or more fill materials.

Abstract: As the first conductive paste, a paste is used which is made by adding an organic solvent to powder of alloy in which a plurality of atoms keep a given crystal structure constant. As the second conductive paste, a paste is used which is made by adding an organic solvent to powder of metal different in kind from the alloy. In a step of making the stack body, cavities are formed in the stack body. In a uniting step, the cavities work to facilitate flow of thermoplastic resin to absorb pressure acting in a direction different from a direction in which pressure exerted on the first conductive paste to unite the stack body, thereby resulting in an increase in pressure for the uniting to solid-state sinter the first conductive paste to make the first layer-to-layer connecting member.

Abstract: Method of manufacturing sinterable electrical components for jointly sintering with active components, the components in planar shape being provided with at least one planar lower face meant for sintering, and an electrical contact area on the face opposite to the sintering face being available in the form of a metallic contact face, whose upper side is contactable by means of a commonly known method of the group: wire bonding or soldering or sintering or pressure contacting, the component being a temperature sensor, whose lower face is provided with a sinterable metallization on a ceramic body, said ceramic body having two electrical contact faces for continued electrical connection.

Abstract: A method is disclosed of constructing a composite material structure, comprised of an aerogel precursor foundation, which is then overlaid throughout its interior with an even and continuous thin layer film of doped thermoelectric semiconductor such that electrical current is transmitted as a quantum surface phenomena, while the cross-section for thermal conductivity is kept low, with the aerogel itself dissipating that thermal conductivity. In one preferred embodiment this is achieved using a modified successive ionic layer adsorption and reaction in the liquid phase.

Abstract: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a substrate and a MEMS sensor over the substrate. The MEMS sensor includes a floating heater disposed over the substrate. The MEMS sensor further includes a heat sink disposed over the substrate and at a side of the floating heater, and the heat sink has an air gap with the floating heater. The MEMS sensor further includes a first plurality of vias formed through the heat sink and thermally connected to the first substrate.

Abstract: An object is to provide a light-emitting module in which a light-emitting element suffering a short-circuit failure does not cause wasteful electric power consumption. Another object is to provide a light-emitting panel in which a light-emitting element suffering a short-circuit failure does not allow the reliability of an adjacent light-emitting element to lower. Focusing on heat generated by a light-emitting element suffering a short-circuit failure, provided is a structure in which electric power is supplied to a light-emitting element through a positive temperature coefficient thermistor (PTC thermistor) thermally coupled with the light-emitting element.

Abstract: An integrated circuit die includes multiple temperature sensor units each for measuring the temperature of respective regions of a semiconductor substrate of the integrated circuit die. The temperature sensor units are each coupled to a multiplexer by respective groups of signal lines. The signal lines include resistance compensation areas for maintaining a particular ratio of resistances of the signal lines of each group.

Abstract: Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer.

Abstract: Provided is a thermoelectric device. The thermoelectric device includes a substrate; first and second electrodes disposed at one side of the substrate, wherein the first and second electrodes are apart from each other; a common electrode formed on the other side of the substrate, wherein the common electrode is separated from the first and second electrodes; first and second legs connecting the common electrode to the first electrode, and the common electrode to the second electrode, respectively; and first and second barrier patterns covering the first and second legs and the substrate between the common electrode and the first electrode and between the common electrode and the second electrode, wherein the first and second barrier patterns prevents the short between the first and second legs and the common electrode and between the first and second legs and the first and second electrodes.

Abstract: A method of producing a temperature sensing device is provided. The method includes forming at least one silicon layer and at least one electrode or contact to define a thermistor structure. At least the silicon layer is formed by printing, and at least one of the silicon layer and the electrode or contact is supported by a substrate during printing thereof. Preferably, the electrodes or contacts are formed by printing, using an ink comprising silicon particles having a size in the range 10 nanometers to 100 micrometers, and a liquid vehicle composed of a binder and a suitable solvent. In some embodiments the substrate is an object the temperature of which is to be measured. Instead, the substrate may be a template, may be sacrificial, or may be a flexible or rigid material. Various device geometries are disclosed.