Abstract: A tubular thermoelectric device wherein conductive substrates and completion elements serve a multiple role of structural support, thermal conductance and electrical conductance. Improved system thermoelectric performance accrues from the minimization of the number of interfaces between dissimilar materials, leading to a reduction in system thermal parasitics and system electrical parasitics. By engineering the shape and orientation of substrates and completion elements, improvements in heat transfer to heat reservoirs is accomplished and improved electrical conductivity is accomplished.

Abstract: A thermoelectric material includes a semiconductor substrate, a semiconductor oxide film formed on the substrate, and a thermoelectric layer provided on the oxide film. The semiconductor oxide film has a first nano-opening formed therein. The thermoelectric layer has such a configuration that semiconductor nanodots are piled up on or above the first nano-opening so as to form a particle packed structure. At least some of the nanodots each have a second nano-opening formed in its surface, and are connected to each other through the second nano-opening with their crystal orientation aligned. The thermoelectric material is produced through steps of oxidizing the substrate to form the semiconductor oxide film thereon, forming the first nano-opening in the oxide film, and epitaxially growing to pile up the plurality of nanodots on the first nano-opening. As a result, it is possible to provide the thermoelectric material superior in thermoelectric conversion performance.

Abstract: In order to achieve a thermoelectric transducer exhibiting a higher conversion efficiency and an electronic apparatus including such a thermoelectric transducer, a thermoelectric conversion device is provided, including a semiconductor stacked structure including semiconductor layers stacked with each other, the semiconductor layers being made from different semiconductor materials, in which a material and a composition of each semiconductor layer in the semiconductor stacked structure are selected so as to avoid conduction-band or valence-band discontinuity.

Abstract: A micro-electromechanical system (MEMS) device can include a substrate and a first beam suspended relative to a substrate surface. The first beam can include a first portion and a second portion that are separated by an isolation joint made of an insulative material. The first and second portions can each include a first semiconductor and a first dielectric layer. The MEMS device can also include a second beam suspended relative to the substrate surface. The second beam can include a second semiconductor and a second dielectric layer to promote curvature of the second beam. The MEMS device can also include a third beam suspended relative to the substrate surface. The third beam consists essentially of a first material. The second beam is configured to move relative to the third beam in response to an acceleration along an axis perpendicular to the surface of the substrate.

Abstract: A miniature thermoelectric energy harvester and a fabrication method thereof. Annular grooves are fabricated on a low-resistivity silicon substrate to define silicon thermoelectric columns, an insulating layer is fabricated on the annular grooves, a thermoelectric material is filled in the annular grooves to form annular thermoelectric columns, and then metal wirings, passivation layers and supporting substrates are fabricated, thereby completing the fabrication process. The silicon thermoelectric column using a silicon base material simplifies the fabrication process. The fabrication of the thermocouple structure is one thin-film deposition process, which simplifies the process. The use of silicon as a component of the thermocouple has a high Seebeck coefficient. The use of vertical thermocouples improves the stability. Since the thermocouple structure is bonded to the upper supporting substrate and lower supporting substrate by wafer-level bonding, the fabrication efficiency is improved.

Abstract: There is provided a high responsivity device for thermal sensing in a Terahertz (THz) radiation detector. A load impedance connected to an antenna heats up due to the incident THz radiation received by the antenna. The heat generated by the load impedance is sensed by a thermal sensor such as a transistor. To increase the responsivity of the sense device without increasing the thermal mass, the device is located underneath a straight portion of an antenna arm. The transistor runs substantially the entire length of the antenna arm alleviating the problem caused by placing large devices on the side of the antenna and the resulting large additional thermal mass that must be heated. This boosts the responsivity of the pixel while retaining an acceptable level of noise and demanding a dramatically smaller increase in the thermal time constant.

Abstract: A method for producing a thermoelectric module with a plurality of thermoelectric leg elements, which are electrically connected in series at opposite ends, includes arranging the leg elements on an electrically conducting plate, connecting the leg elements to the electrically conducting plate, and cutting up the electrically conducting plate into a plurality of conductor tracks, which respectively connect two of the leg elements to one another. From a further aspect, a pre-product for the production of a thermoelectric module by such a method includes an electrically conducting plate with a plurality of conductor track regions for the formation of conductor tracks. The electrically conducting plate has a lower mechanical stability in at least one zone of weakness between two conductor track regions than in the conductor track regions.

Abstract: An array bolometric detector for detecting an electromagnetic radiation in a predetermined infrared or terahertz wavelength range, including a substrate, and an array of bolometric microplates for the detection of the radiation, suspended above the substrate by support elements. The detector includes a membrane arranged above each microplate, and having patterns having a refractive index smaller than that of the membrane formed therein. The patterns are placed periodically along at least one axis of the membrane, according to a period shorter than or equal to ? n , where ? is a wavelength to be detected and n is the average refractive index of the medium separating the microplate from the membrane. The width of the patterns along the axis increases from a central location of the membrane towards the periphery thereof.

Abstract: Disclosed are apparatus and methodology for constructing thermoelectric devices (TEDs). N-type elements are paired with P-type elements in an array of pairs between substrates. The paired elements are electrically connected in series by various techniques including brazing for hot side and/or also cold side connections, and soldering for cold side connections while being thermally connected in parallel. In selected embodiments, electrical and mechanical connections of the elements may be made solely by mechanical pressure.

Abstract: A sensor is disclosed. The sensor includes a substrate including a cold junction area and a hot junction area and a thermocouple including a pair of thermoelectric elements which is formed to extend linearly between the cold junction area and the hot junction area, and stacked on an upper surface of the substrate. Wherein, a stepwise portion is formed adjacent to an end portion of the thermocouple by removing a portion adjacent to an end portion of one of the pair of thermoelectric elements, and a wiring part of metal is formed in the stepwise portion so as to connect electrically the pair of thermoelectric elements each other.

Abstract: A production method for a thermoelectric conversion module having a thermoelectric conversion element and an electrode, which are metallurgically bonded together via a porous metal layer. The porous metal layer is made of nickel or silver and has a density ratio of 50 to 90%.

Abstract: This disclosure provides systems, methods and apparatus for forming microbolometers on glass substrates. In one aspect, the formation of microbolometers on glass substrates can reduce the size and cost of the resultant array and associated circuitry. In one aspect, a portion of the measurement and control circuitry can be formed by thin-film deposition on the glass substrate, while sensitive measurement and control circuitry can be formed on ancillary CMOS substrates. In one aspect, the microbolometers may be packaged using a variety of techniques, including a wafer-level packaging process or a pixel-level packaging process.

Abstract: A detecting element has an absorbing section where a temperature rises according to an amount of electromagnetic waves which are absorbed and a detecting section where characteristics change according to an amount of heat which is transmitted from the absorbing section. A method for manufacturing the detecting element includes: forming the detecting section on a substrate; forming a protective film which covers the detecting section; forming a hollow space portion in a region which overlaps with the detecting section of the substrate in a planar view after the forming of the protective film; and forming the absorbing section by applying a liquid body, which contains a material constituting the absorbing section, in a region on the protective film on an opposite side from the detection section, which overlaps with the detecting section in a planar view, and solidifying the liquid body after the forming of the hollow space portion.

Abstract: Herein disclosed is a method of forming a thermoelectric material having an optimized stoichiometry, the method comprising: reacting a precursor material including a population of nanocrystals with a first ionic solution and a second ionic solution to form a reacted mixture.

Abstract: An integrated thermoelectric device in semiconductor technology comprising a hot side arranged in proximity to a heat source, and a cold side, providing a signal according to the temperature difference between the hot and cold sides. The hot and cold sides are arranged in such a way that their temperatures tend to equal out when the temperature of the heat source varies, i.e. when the sensor is in poor operating conditions. A measuring circuit provides useful information according to a continuously variable portion of the signal from a time when the temperature of the heat source varies. If the temperature of the heat source ceases to vary, the temperatures of the hot and cold sides eventually equal out and the signal is annulled and ceases to vary. The distance between the hot and cold sides can be less than 100 ?m.

Abstract: A transverse thermoelectric device includes a superlattice body, electrically conductive first and second contacts, and first and second thermal contacts. The superlattice body extends between opposite first and second ends along a first direction and between opposite first and second sides along a different, second direction. The superlattice body includes alternating first and second layers of crystalline materials oriented at an oblique angle relative to the first direction. The electrically conductive first contact is coupled with the first end of the superlattice and the electrically conductive second contact is coupled with the second end of the superlattice. The first thermal contact is thermally coupled to the first side of the superlattice and the second thermal contact is thermally coupled to the second side of the superlattice. A Seebeck tensor of the superlattice body is ambipolar.

Abstract: Provided is nano thermoelectric powder with a core-shell structure. Specifically, the nano thermoelectric powder of the core-shell structure of the present invention forms coating layer on the surface of nano powder prior to sintering of the nano powder. An advantage of some aspects of the present invention is that it provides thermoelectric elements having reduced thermal conductivity and enhanced thermoelectric efficiency without affecting electrical conductivity using the nano thermoelectric powder with the core-shell structure.

Abstract: A method is provided for producing a thermoelectric component having at least one pair of thermoelectric legs, including an n-leg and a p-leg, wherein both legs are welded to an electrically conductive contact material, and wherein the n-leg and the p-leg of the pair of legs are welded in separate welding steps to the contact material. A thermoelectric component produced by the method is also provided.

Abstract: Phase change devices, particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. Structure allows application in which an electrical connection can be created between two active terminals, with control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals, allowing use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. Programming control can be placed outside of main signal path through the phase change device, reducing impact of associated capacitance and resistance of the device.

Abstract: It is provided a thermoelectric conversion element used at a high operation temperature of 500° C. or higher and including a laminate structure and electrodes. The laminate structure includes a plurality of p-type silicide substrates, and a plurality of n-type silicide substrates alternately laminated with each other, and adhesive layers each adhering the p-type and n-type silicide substrate adjacent to each other. The adhesive layer is made of a cured matter of an inorganic adhesive of a mixture of an inorganic binder and a filler. The electrodes are formed on the laminate structure and electrically connecting the p-type and n-type silicide substrates. The p-type and n-type silicide substrates have thicknesses of 0.5 mm or larger and 3.0 mm or smaller, the adhesive layer has a thickness of 0.5 mm or larger and 2.0 mm or smaller and has a thermal expansion coefficient of 7×10?6/° C. or larger and 16×10?6/° C. or smaller.

Abstract: A memory device having a phase change material element with a modified stoichiometry in the active region does not exhibit drift in set state resistance. A method for manufacturing the memory device includes first manufacturing an integrated circuit including an array of phase change memory cells with bodies of phase change material having a bulk stoichiometry; and then applying forming current to the phase change memory cells in the array to change the bulk stoichiometry in active regions of the bodies of phase change material to the modified stoichiometry, without disturbing the bulk stoichiometry outside the active regions. The bulk stoichiometry is characterized by stability under the thermodynamic conditions outside the active region, while the modified stoichiometry is characterized by stability under the thermodynamic conditions inside the active region.

Abstract: In a thermal sensor with a detection part and a circuit part formed on the same substrate, an insulating film for protection of the circuit part causes problems of lowering in sensitivity of a heater, deterioration in accuracy due to variation of a residual stress in the detection part, etc. A layered film including insulating films is formed on a heating resistor, an intermediate layer is formed thereon, and a layered film including insulating films is formed further thereon. The intermediate layer is specified to be a layer made up of any one of aluminum nitride, aluminum oxide, silicon carbide, titanium nitride, tungsten nitride, and titanium tungsten. This configuration enables the layered film on the upper part of the detection part to be removed using the intermediate layer as an etch stop layer, which solves problems of lowering in sensitivity, a variation in residual stress, etc. resulting from these.

Abstract: A thermoelectric conversion element formed by laminating, on a substrate having a porous anodic oxidation film of aluminum, a thermoelectric conversion layer which contains an inorganic oxide semiconductor or an element having a melting point of 300° C. or higher, as a main component, and which has a void structure; and a method of producing the same.

Abstract: A transducer for transducing time-related temperature variations into a difference in potentials includes an upper conductive electrode designed to be exposed to a time-related temperature variation to be measured, a lower conductive electrode, and at least one layer of pyroelectric material based on a III-V nitride directly interposed between the upper and lower conductive electrodes to generate, between the upper and lower conductive electrodes, a difference in potentials corresponding to the temperature variation even in the absence of external mechanical stress.

Abstract: Conventional “on-chip” or monolithically integrated thermocouples are very mechanically sensitive and are expensive to manufacture. Here, however, thermocouples are provided that employ different thicknesses of thermal insulators to help create thermal differentials within an integrated circuit. By using these thermal insulators, standard manufacturing processes can be used to lower cost, and the mechanical sensitivity of the thermocouple is greatly decreased. Additionally, other features (which can be included through the use of standard manufacturing processes) to help trap and dissipate heat appropriately.

Abstract: A composite structure with tailored anisotropic energy flow is described. The structure consists of an array of two-dimensional electrodes with anisotropic geometrical shapes on a semiconductor or semimetal layer that in turn is on a metal baselayer. An applied voltage between the two-dimensional electrode array and the baselayer renders the regions under the electrodes insulating such that the anisotropic regions interact with energy flow in the semiconductor or semimetal layer. Depending on the orientation of the anisotropic insulating regions with respect to the principal direction of energy flow, the energy flow in the semiconductor or semimetal layer is greater in a principal direction and is lower in an opposite direction.

Abstract: A semiconductor device that is equipped with a semiconductor substrate, a composite metal film, and a detection terminal is provided. The composite metal film is formed on a surface or a back face of the semiconductor substrate, and has a first metal film, and a second metal film that is joined to the first metal film and is different in Seebeck coefficient from the first metal film. The detection terminal can detect a potential difference between the first metal film and the second metal film.

Abstract: The present invention relates to a thermoelectric device, in particular an all-organic thermoelectric device, and to an array of such thermoelectric devices. Furthermore, the present invention relates to a method of manufacturing a thermoelectric device, in particular an all-organic thermoelectric device. Moreover, the present invention relates to uses of the thermoelectric device and/or the array in accordance with the present invention.

Abstract: In one embodiment, a method of opening a passageway to a cavity includes providing a donor portion, forming a heating element adjacent to the donor portion, forming a first sacrificial slab abutting the donor portion, wherein the donor portion and the sacrificial slab are a shrinkable pair, forming a first cavity, a portion of the first cavity bounded by the first sacrificial slab, generating heat with the heating element, forming a first reduced volume slab from the first sacrificial slab using the generated heat and the donor portion, and forming a passageway to the first cavity by forming the first reduced volume slab.

Abstract: An apparatus comprises at least one transistor. The at least one transistor comprises a substrate, a graphene layer formed on the substrate, and first and second source/drain regions spaced apart relative to one another on the substrate. The graphene layer comprises at least a first portion and a second portion, the first portion being in contact with the first source/drain region and the second portion being in contact with the second source/drain region. One or more cuts are formed in at least one of the first and second portions of the graphene layer. The apparatus allows for lowered contact resistance in graphene/metal contacts.

Abstract: The invention relates to a method of manufacturing a thermoelectric device comprising a plurality of thermoelectric components (4) for creating an electric current from a temperature gradient applied between two faces (3a, 3b) thereof. In the method, a thermally conductive support (30) is provided in contact with a hot or cold source, a thermally conductive and electrically insulating material is thermally sprayed on the support (30) to produce a coating (21), and an electrically conductive material is thermally sprayed onto the coating (21) to form electric conduction tracks (22) which are intended to receive the thermoelectric components (4) via the faces (3a, 3b) thereof. The invention also relates to a thermoelectric device obtained by the method.

Abstract: This integrated circuit comprises: a substrate, a first electrical conductor comprising a first end, the first electrical conductor being electrically insulated from the substrate, a second electrical conductor comprising a second end, the second electrical conductor being electrically insulated from the substrate and electrically insulated from the first electrical conductor except at the second end which is mechanically and electrically directly in contact with the first end to form an electrical junction. The first and second ends are entirely buried to at least 5 ?m depth inside the substrate and produced, respectively, in different first and second materials chosen for the absolute value of the Seebeck coefficient of the junction to be greater than 1 ?V/K at 20° C. such that the combination of these first and second conductors forms a temperature probe.

Abstract: A thermal detector includes a thermal detecting element and a support member supporting the thermal detecting element and a wiring layer. The support member has an arm member connected to a mounting member with the first arm member having an arm base end section extending outwardly from the mounting member toward a first direction, the arm base section having a first width measured along a direction perpendicular to the first direction, and an arm body section having a proximal end portion extending from the arm base end section generally along an outer contour of the mounting member with the proximal end portion being spaced apart from an edge of the mounting member in the first direction. The proximal end portion of the arm body section has a second width measured along a direction perpendicular to a lengthwise direction of the arm body section that is narrower than the first width.

Abstract: An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.

Abstract: A thermoelectric element includes at least one thermopair and a pn-junction. The thermopair has a first material with a positive Seebeck coefficient and a second material with a negative Seebeck coefficient. The first material is selectively contacted by way of a conductor with the p-side of the pn-junction, and the second material is selectively contacted by way of a conductor with the n-side of the pn-junction.

Abstract: Thermoelectric devices are provided. First and second electrodes are provided on a substrate. A first leg including first semiconductor patterns and a first barrier pattern is provided on a first electrode. A second leg including second semiconductor patterns and a second barrier pattern is provided on the second electrode. A third electrode is provided on the first leg and the second leg. The first barrier pattern includes a metal-semiconductor compound including a first metal, and the second barrier pattern includes a metal-semiconductor compound including a second metal. A work function of the second metal is greater than a work function of the first metal.

Abstract: A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb)2Te3 based composition. After melting the metal mixture, the molten metal is solidified on a surface of a cooling roll of which the circumferential velocity is no higher than 5 m/sec, so as to have a thickness of no less than 30 ?m. Thus, a plate shaped raw thermoelectric semiconductor materials 10 are manufactured, in which Te rich phases are microscopically dispersed in complex compound semiconductor phases, and extending directions of C face of most of crystal grains are uniformly oriented. The raw thermoelectric semiconductor materials 10 are layered in the direction of the plate thickness. And the layered body is solidified and formed to form a compact 12. After that, the compact 12 is plastically deformed in such a manner that a shear force is applied in a uniaxial direction that is approximately parallel to the main layering direction of the raw thermoelectric semiconductor materials 10.

Abstract: In a thermoelectric conversion module having a stack structure in which one-side element (p-type thermoelectric conversion element) and an other-side element (thermoelectric conversion element) are alternately stacked; the one-side element and the other-side element are directly bonded in some regions of a bonding surface at which the one-side element and the other-side element are bonded; and the one-side element and the other-side element are bonded via insulating material in other regions of the bonding surface, at least one of the one-side element and the other-side element is a thermoelectric conversion element including a thermoelectric conversion material powder made of an intermetallic compound and a metal powder and being retained to have a predetermined shape by a cured resin.

Abstract: For the present invention, a P-type thermo-electric thin-film layer and a N-type thermo-electric thin-film layer are respectively deposited on two sides of an insulating substrate. During the deposition, the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer are deposited and connected on the same exposed side of the insulating substrate, and then a PN junction is formed. This method makes the fabrication simplified without special process for connecting the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer. Due to the features of thin-film thermo-electric material, the performance of thermo-electric generator is improved. During the deposition, the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer are deposited and connected on the exposed side of the insulating substrate, so welding is not required in this heating surface side.

Abstract: A radiation sensor includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) thermopile junctions connected in series to form a thermopile (7,8) within a dielectric stack (3). The first thermopile junction (7) is insulated from a substrate (2) of the chip. A resistive heater (6) in the dielectric stack for heating the first thermopile junction is coupled to a calibration circuit (67) for calibrating responsivity of the thermopile (7,8). The calibration circuit causes a current flow in the heater and multiplies the current by a resulting voltage across the heater to determine power dissipation. A resulting thermoelectric voltage (Vout) of the thermopile (7,8) is divided by the power to provide the responsivity of the sensor.

Abstract: Embodiments of the invention provide robust electrothermal MEMS with fast thermal response. In one embodiment, an electrothermal bimorph actuator is fabricated using aluminum as one bimorph layer and tungsten as the second bimorph layer. The heating element can be the aluminum or the tungsten, or a combination of aluminum and tungsten, thereby providing a resistive heater and reducing deposition steps. Polyimide can be used for thermal isolation of the bimorph actuator and the substrate. For MEMS micromirror designs, the polyimide can also be used for thermal isolation between the bimorph actuator and the micromirror.

Abstract: A thermoelectric device is disclosed which includes metal thermal terminals protruding from a top surface of an IC, connected to vertical thermally conductive conduits made of interconnect elements of the IC. Lateral thermoelectric elements are connected to the vertical conduits at one end and heatsinked to the IC substrate at the other end. The lateral thermoelectric elements are thermally isolated by interconnect dielectric materials on the top side and field oxide on the bottom side. When operated in a generator mode, the metal thermal terminals are connected to a heat source and the IC substrate is connected to a heat sink. Thermal power flows through the vertical conduits to the lateral thermoelectric elements, which generate an electrical potential. The electrical potential may be applied to a component or circuit in the IC. The thermoelectric device may be integrated into an IC without adding fabrication cost or complexity.

Abstract: The present invention concerns a structure useful for producing a thermoelectric generator, a thermoelectric generator comprising same and a method for producing same. A method for producing a structure useful for producing a thermoelectric generator, wherein the structure comprises at least one stripe of a n-type and at least one stripe of a p-type material, either separated by a stripe of an insulating material, or provided spatially separated on an insulating material, and comprising stripes of conductive material each connecting one n-type stripe with one p-type stripe, and not in electrical contact with each other, wherein the structure is free from polymeric substrates, wherein the method comprises the steps of co-forming the at least one stripe of a n-type and at least one stripe of a p-type material in a single manufacturing step; and forming connections between the at least one stripe of a n-type and at least one stripe of a p-type material by means of stripes of conductive material.

Abstract: A p-type semiconductor block is made of a p-type thermoelectric conversion material, and has a pillar portion and a connection portion laterally protruding from the pillar portion. In addition, an n-type semiconductor block is made of an n-type thermoelectric conversion material, and has a pillar portion and a connection portion laterally protruding from the pillar portion. The p-type semiconductor block and the n-type semiconductor block are alternately arranged in such a way that the connection portion of the p-type semiconductor block is connected with the pillar portion of the n-type semiconductor block and the connection portion of the n-type semiconductor block is connected with the pillar portion of the p-type semiconductor block. The connection portions and tip-end portions of the pillar portions are made of a thermoelectric conversion material containing metal powder.

Abstract: A method of fabricating a thermoelectric device includes providing a substrate having a plurality of inclined growth surfaces protruding from a surface thereof. Respective thermoelectric material layers are grown on the inclined growth surfaces, and the respective thermoelectric material layers coalesce to collectively define a continuous thermoelectric film. A surface of the thermoelectric film opposite the surface of the substrate may be substantially planar, and a crystallographic orientation of the thermoelectric film may be tilted at an angle of about 45 degrees or less relative to a direction along a thickness thereof. Related devices and fabrication methods are also discussed.

Abstract: A thermal diode comprising a superlyophobic surface, and a lyophilic surface separated from the superlyophobic surface defining a chamber. A liquid is disposed in the chamber, the liquid capable of phase changing during operation of the thermal diode. Methods of cooling and insulating bodies and rectifying heat transfer using the thermal diode.

Abstract: There is provided a novel and useful a high responsivity device for thermal sensing in a Terahertz (THz) radiation detector. A load impedance connected to an antenna heats up due to the incident THz radiation received by the antenna. The heat generated by the load impedance is sensed by a thermal sensor such as a transistor. To increase the responsivity of the sense device without increasing the thermal mass, the device is located underneath a straight portion of an antenna arm. The transistor runs substantially the entire length of the antenna arm alleviating the problem caused by placing large devices on the side of the antenna and the resulting large additional thermal mass that must be heated. This boosts the responsivity of the pixel while retaining an acceptable level of noise and demanding a dramatically smaller increase in the thermal time constant.

Abstract: The invention relates to a method for production of at least one thermoelectric apparatus with the steps of: preparation of a first wafer (1) which is formed from a thermoelectric material of a first conductivity type; preparation of a second wafer which is formed from a thermoelectric material of a second conductivity type; structuring of the first wafer (1) so that a group of first thermoelectric structures (7) is produced; structuring of the second wafer so that a group of second thermoelectric structures is produced; and linking of the first to the second wafer in such a manner that the first and the second thermoelectric structures are electrically connected together and thus form the thermoelectric apparatus. According to the invention, before the structuring of the first wafer (1), a first contact material (3) is deposited on the first wafer (1) and/or before the structuring of the second wafer, a second contact material is deposited onto the second wafer.

Abstract: According to an embodiment, a semiconductor device includes a semiconductor substrate and an amorphous semi-insulating layer on the semiconductor substrate.

Abstract: A thermoelectric module including: an n-type thermoelectric element; a p-type thermoelectric element; a diffusion blocking layer bonded integrally on each of a top and a bottom surface of the n-type thermoelectric element and on each of a top and a bottom surface of the p-type thermoelectric element; an electrode on the n-type thermoelectric element and on the p-type thermoelectric element; and a bonding layer disposed between the electrode and at least one of the n-type thermoelectric element and the p-type thermoelectric element, wherein the bonding layer includes an amorphous metal.