Abstract: A method for improving CdZnTe-based gamma-ray detectors is presented. A CdZnTe detector/crystal is exposed to acoustic waves. After exposure to acoustic waves, the CdZnTe gamma-detector gains higher resistivity and exhibits better spectral resolution and greater sensitivity. Further, when a batch of detectors is made according to the method of the present invention, the properties of the crystals are more homogenous, allowing for cheaper and more standardized detectors.

Abstract: Method for manufacturing a plurality of pyroelectric sensors by forming a thin pyroelectric film or layer on one face of a silicon wafer or substrate, wherein electric polarisation of this film is provided between lower and upper electrodes defining pixels forming these sensors. In order to protect the wafer in the event of a short-circuit between two electrodes of a pixel, resistors are arranged in series with the lower or upper electrodes by connecting these electrodes to each other by subsets in order to carry out the electric polarisation. Once this polarisation has been carried out, the electric connections connecting the upper or lower electrodes are removed to allow each pixel to supply an elementary electric signal when the sensor is operating. In order to minimise the risk of short-circuits and in order to reduce the stray capacity of the electrodes, the upper and lower electrodes of the pixels are structured.

Abstract: An array substrate for use in an X-ray sensing device is fabricated using an etching stopper that enables good control of the etching process and that prevents over-etch of drain electrodes and second capacitor electrodes while forming contact holes and a cutting furrow. The etching stopper is located in a tiling portion that is utilized for tiling substrates to form a large-sized X-ray detector. During fabrication, gate lines can have gate-protruded portions located near the etching stopper, and the etching stopper can have stopper-protruded portions near the gate lines. The stopper-protruded portions electrically connect to the gate-protruded portions through gate line contact holes such that the etching stopper and the gate lines have equipotentials. This can reduce static electricity damage.

Abstract: A method for improving CdZnTe-based gamma-ray detectors is presented. A CdZnTe detector/crystal is exposed to acoustic waves. After exposure to acoustic waves, the CdZnTe gamma-detector gains higher resistivity and exhibits better spectral resolution and greater sensitivity. Further, when a batch of detectors is made according to the method of the present invention, the properties of the crystals are more homogenous, allowing for cheaper and more standardized detectors.

Abstract: A structure and method thereof for providing an electrically conductive path between a first conductive point and a second conductive point. The structure includes an insulating material disposed between the first conductive point and the second conductive point. A dipole material is distributed within the insulating material. The dipole material is comprised of randomly oriented magnetic particles. The magnetic particles in a selected localized region of the insulating material are aligned to form an electrically conductive path between the first conductive point and the second conductive point through the insulating material.

Abstract: A photovoltaic element having a wire disposed on a surface of the photovoltaic element for outputting a power generated by the photovoltaic element, and an electrode electrically joined with the wire while forming a joining portion, wherein the joining portion of the wire and the electrode has at least a first joining portion and a second joining portion which is adjacent to the first joining portion, and the second joining portion has an elasticity which is greater than that of the first joining portion. A process for the production of the photovoltaic element. A method for forming an electrical continuity between a covered wire and a conductor, including a method of removing a cover portion of the covered wire and a method of joining the covered wire with the conductor.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region.

Abstract: A chip of semiconductor material includes a first layer with a first type of conductivity having a surface on the first major surface of the chip, a second layer with the first type of conductivity having a surface on the second major surface of the chip, and a third layer with the first type of conductivity having a resistivity lower than those of the first and second layers and disposed between the first layer and the second layer. A first region with a second, type of conductivity, extends from the first surface into the first layer, and a second region with the second type of conductivity, extends from the second major surface into the second layer. First, second and third electrical connections are provided for connection with the first region, the second region, and the third layer, respectively.

Abstract: The present invention provides an improved conditioning wheel for conditioning polishing pads used to polish semiconductor wafers. The conditioning wheel includes a planar body and a homogeneous abrasive layer located on the planar body wherein the homogenous abrasive layer includes abrasive protrusions comprised of a same material as the homogenous abrasive layer.

Abstract: To produce a high quality tunnel oxidation film on a bulk superconductor surface. A tunnel oxidation film is formed by anodizing a bulk aluminum material and then a tunnel oxidation film is formed by irradiating oxygen ions.

Abstract: Method for determining the robustness of a device to soft errors generated by alpha-particle and/or cosmic ray strikes.

Abstract: Aluminum Free InGaAs/InGaP quantum dot photoconductive detectors are grown on GaAs substrates by LP-MOCVD.

Abstract: A radiation-damage resistant radiation detector with preferably three dimensional collection electrodes may be formed on a substrate that is a semiconductor or an insulator, and may be operated in avalanche mode to increase detection output. A detector comprising interleaved n-type and p-type preferably three dimensional electrodes formed in an area whose perimeter is an active trench. The trench is doped with dopant of opposite type polarity to that of the nearest electrodes, with respect to which the trench is reverse biased. The trench itself can act as a detector element, and the overall device exhibits edge-to-edge active detection. A plurality of such detectors may be arrayed in a plane to provide an essentially seamless large area detector suitable for medical and research applications, including synchrotron studies.

Abstract: Apparatus and methods for determining the robustness of a device to soft errors generated by alpha-particle and/or cosmic ray strikes.

Abstract: In a process for fabricating a radiation detector comprising the step of drifting lithium from one side of a silicon wafer, a boron diffusion layer is formed on the other side of the silicon wafer prior to the drifting step. Therefore, in spite of the tendency of the drift layer to have uneven thickness, the drift layer is allowed to be formed uniformly over the entire area. This eliminates the need to lap the other side of the wafer to expose the drift layer over the entire surface. Also, a PN junction diode is formed on the other side of the wafer, and this makes the completed detector resistant to environmental influences, as opposed to conventional radiation detectors of this type which include a surface barrier type diode.

Abstract: A photoreflective detector includes a light emitting element; and a light receiving element located so as to receive light emitted from the light emitting element and reflected by an object. The light emitting element and the light receiving element are located to have different distances from the object so as to avoid direct incidence of the light emitted by the light emitting element on the light receiving element.

Abstract: A method of regenerating the catalyst in a Fischer-Tropsch synthesis reaction. Synthesis gas is supplied to the catalyst in conditions which favor high CO conversions. This results in a high H.sub.2 partial pressure which in turn results in catalyst regeneration.