Having Selenium Or Tellurium Elemental Semiconductor Component Patents (Class 438/84)
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Publication number: 20120180858Abstract: One aspect of the present invention provides a method to make a film. The method includes providing a target comprising a sulfide within an oxygen free environment; applying a plurality of direct current pulses to the target to create a pulsed direct current plasma; sputtering the sulfide target with the pulsed DC plasma to eject a material comprising sulfur into the plasma; and depositing a film comprising the ejected material onto a support. Another aspect of the present invention provides a method of making a photovoltaic device.Type: ApplicationFiled: January 13, 2011Publication date: July 19, 2012Applicant: GENERAL ELECTRIC COMPANYInventors: Dalong Zhong, Gautam Parthasarathy, Richard Arthur Nardi, JR.
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INTEGRATED DEPOSITION OF THIN FILM LAYERS IN CADMIUM TELLURIDE BASED PHOTOVOLTAIC MODULE MANUFACTURE
Publication number: 20120164784Abstract: Apparatus and processes for thin film deposition of semiconducting layers in the formation of cadmium telluride thin film photovoltaic device are provided. The apparatus includes a series of integrally connected chambers, such as a load vacuum chamber connected to a load vacuum pump; a sputtering deposition chamber; a vacuum buffer chamber; and, a vapor deposition chamber. A conveyor system is operably disposed within the apparatus and configured for transporting substrates in a serial arrangement into and through the load vacuum chamber, the sputtering deposition chamber, the vacuum buffer chamber, and the vapor deposition chamber at a controlled speed. The sputtering deposition chamber; the vacuum buffer chamber; and the vapor deposition chamber are integrally connected such that the substrates being transported through the apparatus are kept at a system pressure less than about 760 Torr.Type: ApplicationFiled: December 23, 2010Publication date: June 28, 2012Applicant: PRIMESTAR SOLAR, INC.Inventors: Scott Daniel Feldman-Peabody, Russell Weldon Black, Robert Dwayne Gossman, Brian Robert Murphy, Mark Jeffrey Pavol -
Patent number: 8198123Abstract: Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web.Type: GrantFiled: April 15, 2009Date of Patent: June 12, 2012Assignee: Global Solar Energy, Inc.Inventors: Jeffrey S. Britt, Scott Wiedeman
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Patent number: 8193442Abstract: CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group IB and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stochiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).Type: GrantFiled: December 11, 2007Date of Patent: June 5, 2012Assignee: Nanosolar, Inc.Inventors: Brian M. Sager, Dong Yu, Matthew R. Robinson
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Patent number: 8193027Abstract: Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.Type: GrantFiled: February 8, 2011Date of Patent: June 5, 2012Assignee: Air Products and Chemicals, Inc.Inventors: Manchao Xiao, Liu Yang, Xinjian Lei, Iain Buchanan
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Patent number: 8187904Abstract: A method and a system are provide for forming planar precursor structures which are subsequently converted into thin film solar cell absorber layers. A precursor structure is first formed on the front surface of the foil substrate and then planarized through application of force or pressure by a smooth surface to obtain a planar precursor structure. The precursor structure includes at least one of a Group IB material, Group IIIA material and Group VIA material. The planar precursor structures are reacted to form planar and compositionally uniform thin film absorber layers for solar cells.Type: GrantFiled: July 21, 2008Date of Patent: May 29, 2012Assignee: SoloPower, Inc.Inventor: Bulent M. Basol
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Patent number: 8187963Abstract: A method of forming an ohmic contact to a surface of a Cd and Te containing compound film as may be found, for example in a photovoltaic cell. The method comprises forming a Te-rich layer on the surface of the Cd and Te containing compound film; depositing an interface layer on the Te-rich layer; and laying down a contact layer on the interface layer. The interface layer is composed of a metallic form of Zn and Cu.Type: GrantFiled: September 13, 2010Date of Patent: May 29, 2012Assignee: EncoreSolar, Inc.Inventor: Bulent M. Basol
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Publication number: 20120103420Abstract: A Cu-In-Zn-Sn-(Se,S)-based thin film for a solar cell and a preparation method thereof, and more particularly, to a Cu-In-Zn-Sn-(Se,S)-based thin film for a solar cell which can reduce an amount of In to be used and exhibit an excellent conversion efficiency and a preparation method thereof.Type: ApplicationFiled: November 8, 2010Publication date: May 3, 2012Applicant: KOREA INSTITUTE OF ENERGY RESEARCHInventors: Jae-Ho Yun, Kyung-Hoon Yoon, Sejin Ahn, Jihye Gwak, Kee-Shik Shin, Kyoo-Ho Kim, Jin-Hyeok Kim
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Patent number: 8153469Abstract: The present invention provides a method to form Group IBIIIAVIA solar cell absorber layers on continuous flexible substrates. In a preferred aspect, the method forms a Group IBIIIAVIA absorber layer for manufacturing photovoltaic cells by providing a workpiece having a precursor layer formed over a substrate, the precursor layer including copper, indium, gallium and selenium; heating the precursor layer to a first temperature; reacting the precursor layer at the first temperature for a first predetermined time to transform the precursor layer to a partially formed absorber structure; cooling down the partially formed absorber structure to a second temperature, wherein both the first temperature and the second temperature are above 400° C.; and reacting the partially formed absorber structure at the second temperature for a second predetermined time, which is longer than the first predetermined time, to form a Group IBIIIAVIA absorber layer.Type: GrantFiled: December 7, 2009Date of Patent: April 10, 2012Assignee: SoloPower, Inc.Inventors: Serdar Aksu, Yuriy Matus, Rasmi Das, Mustafa Pinarbasi
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Patent number: 8143515Abstract: Methods for manufacturing a cadmium telluride based thin film photovoltaic device are generally disclosed. The method can include sputtering a resistive transparent layer on a transparent conductive oxide layer from an alloy target including zinc from about 5% by weight and about 33% by weight and tin. The method can also include forming a cadmium sulfide layer on the resistive transparent layer, forming a cadmium telluride layer on the cadmium sulfide layer, and forming a back contact layer on the cadmium telluride layer. Cadmium telluride thin film photovoltaic devices are also generally disclosed including a resistive transparent layer having a mixture of zinc oxide and tin oxide having a zinc oxide concentration between about 5% and about 33% by mole fraction.Type: GrantFiled: December 15, 2009Date of Patent: March 27, 2012Assignee: PrimeStar Solar, Inc.Inventors: Robert Dwayne Gossman, Jennifer A. Drayton
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Publication number: 20120067424Abstract: Processes for making a solar cell by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to control the stoichiometry of metal atoms in making a solar cell for targeting a particular concentration and providing a gradient of metal atom concentration. A selenium layer can be used in annealing a thin film photovoltaic absorber material.Type: ApplicationFiled: September 15, 2011Publication date: March 22, 2012Applicant: PRECURSOR ENERGETICS, INC.Inventors: Kyle L. Fujdala, Zhongliang Zhu, David Padowitz, Paul R. Markoff Johnson, Wayne A. Chomitz
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Publication number: 20120052617Abstract: An apparatus and related process are provided for vapor deposition of a sublimated source material as a doped thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material supplied from a first feed tube. A second feed tube can provide a dopant material into the deposition head. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus to further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.Type: ApplicationFiled: December 20, 2010Publication date: March 1, 2012Applicant: General Electric CompanyInventors: James Neil Johnson, Yu Zhao, Scott Daniel Feldman-Peabody
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Publication number: 20120048333Abstract: Scribing and deposition processes can be used to interconnect cells within photovoltaic modules.Type: ApplicationFiled: August 29, 2011Publication date: March 1, 2012Inventors: Oleh P. Karpenko, Jianjun Wang
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Publication number: 20120038013Abstract: A lateral Metal-Semiconductor-Metal (MSM) Photodetector (PD) is based on amorphous selenium (a-Se). It has low dark current, high photoconductive gain towards short wavelengths, and high speed of operation up to several KHz. From processing point of view, a lateral structure is more attractive due to ease of fabrication as well as compatibility with conventional thin-film transistor (TFT) processes. The lateral a-Se MSM PD therefore has potentials in a variety of optical sensing applications particularly in indirect X-ray imaging utilizing scintillators and ultraviolet (UV) imaging for life sciences.Type: ApplicationFiled: April 22, 2010Publication date: February 16, 2012Inventors: Karim S. Karim, Kai Wang, Amirhossein Goldan
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Publication number: 20120021556Abstract: A selenium deposition system can improve the selenium vapor distribution.Type: ApplicationFiled: July 22, 2011Publication date: January 26, 2012Inventors: Markus E. Beck, Ashish Bodke, Ulrich Alexander Bonne, Benyamin Buller, Raffi Garabedian, Erel Milshtein, Ming Lun Yu
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Publication number: 20120003785Abstract: A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.Type: ApplicationFiled: September 9, 2011Publication date: January 5, 2012Inventor: Neil M. Mackie
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Publication number: 20120003784Abstract: Methods for forming a conductive oxide layer on a substrate are provided. The method can include sputtering a transparent conductive oxide layer (“TCO layer”) on a substrate from a target (e.g., including cadmium stannate) at a sputtering temperature of about 10° C. to about 100° C. The TCO layer can then be annealed in an anneal temperature comprising cadmium at an annealing temperature of about 500° C. to about 700° C. The method of forming the TCO layer can be used in a method for manufacturing a cadmium telluride based thin film photovoltaic device, further including forming a cadmium sulfide layer over the transparent conductive oxide layer and forming a cadmium telluride layer over the cadmium sulfide layer.Type: ApplicationFiled: July 2, 2010Publication date: January 5, 2012Applicant: PRIMESTAR SOLAR, INC.Inventors: Scott Daniel Feldman-Peabody, Robert Dwayne Gossman
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Publication number: 20110318863Abstract: A photovoltaic device manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell using nanoimprint technology to define individual cell units of the photovoltaic device. The methods can include providing a substrate; forming a first conductive layer over the substrate; forming first grooves in the first conductive layer using a nanoimprint and etching process; forming an absorption layer over the first conductive layer, the absorption layer filling in the first grooves; forming second grooves in the absorption layer using a nanoimprint process; forming a second conductive layer over the absorption layer, the second conductive layer filling in the second grooves; and forming third grooves in the second conductive layer and the absorption layer, thereby defining a photovoltaic cell unit.Type: ApplicationFiled: June 25, 2010Publication date: December 29, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Chiang Tu, Chun-Lang Chen
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Publication number: 20110315220Abstract: Methods are provided for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer. One method includes depositing at least one back contact material on a metal contact. The back contact material comprises a metal nitride or a metal phosphide. The method further includes depositing an absorber layer comprising cadmium and tellurium above the back contact material and thermally processing the back contact material, such that the back contact material interacts with the absorber layer to form an interlayer that lowers a contact resistance for the photovoltaic cell. A photovoltaic cell is also provided and includes comprising a metal contact, at least one back contact material disposed on the metal contact, and an absorber layer comprising a material comprising cadmium and tellurium disposed above the back contact material.Type: ApplicationFiled: June 29, 2010Publication date: December 29, 2011Applicant: GENERAL ELECTRIC COMPANYInventors: Bastiaan Arie Korevaar, Juan Carlos Rojo, Faisal Razi Ahmad, David William Vernooy
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Patent number: 8080856Abstract: A photoelectric structure is presented, comprising one or more PiN cells. The PiN cell is formed by an intrinsic semiconductor bulk having front and rear surfaces enclosed between p- and n-type regions extending along side surfaces of said semiconductor bulk. The front and rear surfaces of the intrinsic semiconductor bulk are active surfaces of the PiN cell and said side surfaces of said semiconductor bulk formed with said p- and n-type regions are configured and operable for collecting excess charged carriers generated in said semiconductor bulk in response to collected electromagnetic radiation to which at least one of the active surfaces is exposed during the PiN cell operation.Type: GrantFiled: September 2, 2009Date of Patent: December 20, 2011Inventors: Gady Golan, Alex Axelevitch, Ronen Shavit
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Patent number: 8076174Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.Type: GrantFiled: March 28, 2011Date of Patent: December 13, 2011Assignee: MiaSoleInventors: Daniel R. Juliano, Deborah Mathias, Neil M. Mackie
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Publication number: 20110287573Abstract: This invention relates to processes for making kesterite compositions with atypical Cu:Zn:Sn:S ratios and/or kesterite compositions with unusually small coherent domain sizes. This invention also relates to these kesterite compositions and their use in preparing CZTS films.Type: ApplicationFiled: May 21, 2010Publication date: November 24, 2011Applicant: E.I. DU PONT DE NEMOURS AND COMPANYInventors: Lynda Kaye Johnson, H. David Rosenfeld, Daniela Rodica Radu
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Patent number: 8053734Abstract: A conformal coherent wideband antenna coupled IR detector array included a plurality of unit cells each having a dimension that includes an antenna for focusing radiation onto an absorber element sized less than the dimension. In one embodiment, the absorber element may be formed of a mercury cadmium telluride alloy. According to a further embodiment, the antenna array may be fabricated using sub-wavelength fabrication processes.Type: GrantFiled: April 30, 2009Date of Patent: November 8, 2011Assignee: Raytehon CompanyInventors: Deborah J. Kirby, David T. Chang, Terence J. De Lyon, James H. Schaffner, Metin S. Mangir, Jeffery J. Puschell, Jar Jueh Lee, Michael Gritz
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Publication number: 20110265874Abstract: Methods are generally provided for forming a cadmium sulfide layer on a substrate. In one particular embodiment, the method can include sputtering a cadmium sulfide layer on a substrate in a sputtering atmosphere comprising an inorganic fluorine source gas. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. Cadmium telluride based thin film photovoltaic devices are also generally provided. The device can include a substrate; a transparent conductive oxide layer on the substrate; a cadmium sulfide layer on the transparent conductive oxide layer; and, a cadmium telluride layer on the cadmium sulfide layer. The cadmium sulfide layer includes fluorine.Type: ApplicationFiled: April 29, 2010Publication date: November 3, 2011Applicant: PRIMESTAR SOLAR, INC.Inventors: Robert Dwayne Gossman, Mark Jeffrey Pavol
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Publication number: 20110265868Abstract: Cadmium telluride thin film photovoltaic devices are generally provided. The device can include a substrate, a transparent conductive oxide layer on the substrate; a resistive transparent buffer layer on the transparent conductive oxide layer; a cadmium sulfide layer on the resistive transparent buffer layer; a cadmium telluride layer on the cadmium sulfide layer; and, a back contact layer on the cadmium telluride layer. The cadmium sulfide layer can include oxygen in a molar percentage greater than 0% to about 20%. In one particular embodiment, a second cadmium sulfide layer substantially free from oxygen can be positioned between the cadmium sulfide layer and the cadmium telluride layer. Methods of depositing a cadmium sulfide layer on a substrate and methods of manufacturing a cadmium telluride thin film photovoltaic device are also generally provided.Type: ApplicationFiled: April 29, 2010Publication date: November 3, 2011Applicant: PRIMESTAR SOLAR, INC.Inventors: Jennifer Ann Drayton, Scott Daniel-Feldman Peabody, Robert Dwayne Gossman
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Publication number: 20110259418Abstract: A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InXGa1-X)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described.Type: ApplicationFiled: June 30, 2011Publication date: October 27, 2011Applicant: MiaSoleInventor: Dennis R. Hollars
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Publication number: 20110259423Abstract: A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.Type: ApplicationFiled: April 22, 2010Publication date: October 27, 2011Applicant: GENERAL ELECTRIC COMPANYInventors: Bastiaan Arie Korevaar, Juan Carlos Rojo, Roman Shuba
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Publication number: 20110263070Abstract: Systems and processes for treatment of a cadmium telluride thin film photovoltaic device are generally provided. The systems can include a treatment system and a conveyor system. The treatment system includes a preheating section, a treatment chamber, and an anneal oven that are integrally interconnected within the treatment system. The conveyor system is operably disposed within the treatment system and configured for transporting substrates in a serial arrangement into and through the preheat section, into and through the treatment chamber, and into and through the anneal oven at a controlled speed. The treatment chamber is configured for applying a material to a thin film on a surface of the substrate and the anneal oven is configured to heat the substrate to an annealing temperature as the substrates are continuously conveyed by the conveyor system through the treatment chamber.Type: ApplicationFiled: April 23, 2010Publication date: October 27, 2011Applicant: PRIMESTAR SOLAR, INC.Inventors: Cory Allen Schaeffer, Brian Robert Murphy
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Patent number: 8039290Abstract: Methods of making a photovoltaic (PV) cell are disclosed. The methods comprise at least the steps of, providing a first component comprising a cadmium telluride (CdTe) layer comprising an interfacial region, and subjecting the first component to a functionalizing treatment in the presence of a material comprising copper.Type: GrantFiled: December 16, 2009Date of Patent: October 18, 2011Assignee: General Electric CompanyInventors: Scott Feldman-Peabody, Bogdan Lita, Michael Burnash Cozens, Mehran Sadeghi, Yu Zhao, Renee Mary Whitney
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Publication number: 20110244620Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 50° C. to about 250° C., and annealing the transparent conductive oxide layer at an anneal temperature of about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.Type: ApplicationFiled: March 30, 2010Publication date: October 6, 2011Applicant: PRIMESTAR SOLAR, INC.Inventors: Scott Daniel Feldman-Peabody, Jennifer Ann Drayton
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Publication number: 20110244622Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.Type: ApplicationFiled: March 30, 2010Publication date: October 6, 2011Applicant: PRIMESTAR SOLAR, INC.Inventor: Scott Daniel-Feldman Peabody
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Publication number: 20110244621Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate from a target (e.g., including cadmium stannate) in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.Type: ApplicationFiled: March 30, 2010Publication date: October 6, 2011Applicant: PRIMESTAR SOLAR, INC.Inventor: Scott Daniel Feldman-Peabody
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Patent number: 8017976Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.Type: GrantFiled: June 7, 2010Date of Patent: September 13, 2011Assignee: MiaSoleInventors: Daniel R. Juliano, Deborah Mathias, Neil M. Mackie
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Patent number: 8003434Abstract: A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.Type: GrantFiled: February 16, 2010Date of Patent: August 23, 2011Inventor: Shimon Maimon
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Patent number: 7977139Abstract: Before a buffer layer deposition step P5, a pre-rinse step P4 is provided to remove deposits deposited on the surface of a CIS-based light absorbing layer 3D. Thus, the disturbing factors of the formation reaction of the buffer layer are removed, thereby to improve the coverage of the buffer layer, and to hold the transparency thereof. In addition, a rinse step P6 is provided after the step P5. Thus, the colloidal solid matter remaining on the buffer layer surface is cleaned and removed with a rinse solution, thereby to hold the high resistivity. The rinse solution from a second rinse tank of the step P6 is re-used. After the step P6, a draining/drying step P7 is provided. After drying, an n-type window layer (transparent conductive film) is deposited.Type: GrantFiled: March 28, 2007Date of Patent: July 12, 2011Assignee: Showa Shell Sekiyu K.K.Inventors: Katsumi Kushiya, Yousuke Fujiwara
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Publication number: 20110162696Abstract: A solar cell includes a substrate, a first electrode located over the substrate, a sodium doped p-type copper indium selenide (CIS) based alloy semiconductor absorber layer located over the first electrode, a zinc and sodium doped n-type copper indium selenide (CIS) based alloy semiconductor layer located on the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer.Type: ApplicationFiled: January 5, 2010Publication date: July 7, 2011Inventors: Johannes Vlcek, Daniel R. Juliano
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Publication number: 20110155208Abstract: A heterojunction photovoltaic device comprises a chemically-doped n-type semiconductor layer, a charge-blocking layer that can have a compositionally graded configuration, and a chemically-doped p-type semiconductor layer. The charge-blocking layer can significantly reduce interfacial recombination of electrons and holes, increase open circuit voltage (Voc), and increase overall photovoltaic device efficiency.Type: ApplicationFiled: June 25, 2009Publication date: June 30, 2011Inventor: Michael Wang
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Publication number: 20110146786Abstract: A photovoltaic module may include a substrate including a coating; and an interlayer placed in contact with the substrate, where the interlayer includes an acid-modified polyethylene.Type: ApplicationFiled: December 21, 2010Publication date: June 23, 2011Applicant: First Solar, Inc.Inventors: Brian E. Cohen, Wenlai Feng
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Publication number: 20110143489Abstract: A process for making a component of a thin film solar cell is provided. The process includes steps of making the component in the following sequence: depositing an absorber layer on a transparent substrate, depositing a back-contact layer on the absorber layer and activating the absorber layer. The absorber layer comprises tellurium. A process for making a thin film solar cell is also presented.Type: ApplicationFiled: December 11, 2009Publication date: June 16, 2011Applicant: GENERAL ELECTRIC COMPANYInventor: Bastiaan Arie Korevaar
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Publication number: 20110143492Abstract: A method of p-type doping cadmium telluride (CdTe) is disclosed. The method comprising the steps of, (a) providing a first component comprising cadmium telluride (CdTe) comprising an interfacial region, and (b) subjecting the CdTe to a functionalizing treatment to obtain p-type doped CdTe, said functionalizing treatment comprising a thermal treatment of at least a portion of the interfacial region in the presence of a first material comprising a p-type dopant, and of a second material comprising a halogen. A method of making a photovoltaic cell is also disclosed.Type: ApplicationFiled: December 16, 2009Publication date: June 16, 2011Applicant: GENERAL ELECTRIC COMPANYInventors: John Anthony DeLuca, Scott Feldman-Peabody
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Publication number: 20110139247Abstract: Cadmium telluride thin film photovoltaic devices are generally disclosed including a graded alloy telluride layer. The device can include a cadmium sulfide layer, a graded alloy telluride layer on the cadmium sulfide layer, and a back contact on the graded alloy telluride layer. The graded alloy telluride layer generally has an increasing alloy concentration and decreasing cadmium concentration extending in a direction from the cadmium sulfide layer towards the back contact layer. The device may also include a cadmium telluride layer between the cadmium sulfide layer and the graded alloy telluride layer. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having a graded cadmium telluride structure.Type: ApplicationFiled: December 16, 2009Publication date: June 16, 2011Applicant: PRIMESTAR SOLAR, INC.Inventor: SCOTT DANIEL FELDMAN-PEABODY
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Publication number: 20110139245Abstract: A cadmium telluride thin film photovoltaic device is provided having a thin film interlayer positioned between a cadmium sulfide layer and a cadmium telluride layer. The thin film interlayer can be an oxide thin film layer (e.g., an amorphous silica layer, a cadmium stannate layer, a zinc stannate layer, etc.) or a nitride film, and can act as a chemical barrier at the p-n junction to inhibit ion diffusion between the layers. The device can include a transparent conductive layer on a glass superstrate, a cadmium sulfide layer on the transparent conductive layer, a thin film interlayer on the cadmium sulfide layer, a cadmium telluride layer on the thin film interlayer, and a back contact on the cadmium telluride layer. Methods are also provided of manufacturing such devices.Type: ApplicationFiled: December 16, 2009Publication date: June 16, 2011Applicant: PRIMESTAR SOLAR, INC.Inventors: JONATHAN MACK FREY, ROBERT DWAYNE GOSSMAN, MEHRAN SADEGHI, SCOTT DANIEL FELDMAN-PEABODY, JENNIFER A. DRAYTON, VICTOR KAYDANOV
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Publication number: 20110143493Abstract: Methods of making a photovoltaic (PV) cell are disclosed. The methods comprise at least the steps of, providing a first component comprising a cadmium telluride (CdTe) layer comprising an interfacial region, and subjecting the first component to a functionalizing treatment in the presence of a material comprising copper.Type: ApplicationFiled: December 16, 2009Publication date: June 16, 2011Applicant: GENERAL ELECTRIC COMPANYInventors: Scott Feldman-Peabody, Bogdan Lita, Michael Burnash Cozens, Mehran Sadeghi, Yu Zhao, Renee Mary Whitney
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Publication number: 20110139227Abstract: A photovoltaic cell comprises a first subcell formed of a Group IV semiconductor material, a second subcell formed of a Group II-VI semiconductor material, and a tunnel heterojunction interposed between the first and second subcells. A first side of the tunnel heterojunction is formed by a first layer that is adjacent to a top surface of the first subcell. The first layer is of a first conductivity type, is comprised of a highly doped Group IV semiconductor material. The other side of the tunnel heterojunction is formed by a second layer that adjoins the lower surface of the second subcell. The second layer is of a second conductivity type opposite the first conductivity type, and is comprised of a highly doped Group II-VI semiconductor material. The tunnel heterojunction permits photoelectric series current to flow through the subcells.Type: ApplicationFiled: December 10, 2009Publication date: June 16, 2011Applicant: EPIR TECHNOLOGIES, INC.Inventors: Sivalingam SIVANANTHAN, Michael CARMODY, Robert W. BOWER, Shubhrangshu MALLICK, James GARLAND
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Publication number: 20110139235Abstract: Methods for manufacturing a cadmium telluride based thin film photovoltaic device are generally disclosed. The method can include sputtering a resistive transparent layer on a transparent conductive oxide layer from an alloy target including zinc from about 5% by weight and about 33% by weight and tin. The method can also include forming a cadmium sulfide layer on the resistive transparent layer, forming a cadmium telluride layer on the cadmium sulfide layer, and forming a back contact layer on the cadmium telluride layer. Cadmium telluride thin film photovoltaic devices are also generally disclosed including a resistive transparent layer having a mixture of zinc oxide and tin oxide having a zinc oxide concentration between about 5% and about 33% by mole fraction.Type: ApplicationFiled: December 15, 2009Publication date: June 16, 2011Applicant: PRIMESTAR SOLAR, INC.Inventors: ROBERT DWAYNE GOSSMAN, JENNIFER A. DRAYTON
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VAPOR DEPOSITION APPARATUS AND PROCESS FOR CONTINUOUS DEPOSITION OF A THIN FILM LAYER ON A SUBSTRATE
Publication number: 20110143491Abstract: An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus. The distribution plate includes a pattern of holes therethrough that further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.Type: ApplicationFiled: December 16, 2009Publication date: June 16, 2011Applicant: PRIMESTAR SOLAR, INC.Inventors: CHRISTOPHER RATHWEG, MAX WILLIAM REED, MARK JEFFREY PAVOL, SCOTT DANIEL FELDMAN-PEABODY, RUSSELL WELDON BLACK -
Publication number: 20110143490Abstract: Methods for manufacturing a cadmium telluride based thin film photovoltaic device are generally disclosed. A resistive transparent layer can be sputtered on a transparent conductive oxide layer from a metal alloy target in a sputtering atmosphere of argon and oxygen that includes argon from about 5% to about 40%. A cadmium sulfide layer can then be formed on the resistive transparent layer. A cadmium telluride layer can be formed on the cadmium sulfide layer; and a back contact layer can be formed on the cadmium telluride layer. The sputtering can be accomplished within a sputtering chamber.Type: ApplicationFiled: December 15, 2009Publication date: June 16, 2011Applicant: PRIMESTAR SOLAR, INC.Inventor: PATRICK LYNCH O'KEEFE
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Patent number: 7960203Abstract: A method of manufacturing an electrode is provided that includes providing a pillar of a first phase change material atop a conductive structure of a dielectric layer; or the inverted structure; forming an insulating material atop dielectric layer and adjacent the pillar, wherein an upper surface of the first insulating material is coplanar with an upper surface of the pillar; recessing the upper surface of the pillar below the upper surface of the insulating material to provide a recessed cavity; and forming a second phase change material atop the recessed cavity and the upper surface of the insulating material, wherein the second phase change material has a greater phase resistivity than the first phase change material.Type: GrantFiled: January 29, 2008Date of Patent: June 14, 2011Assignee: International Business Machines CorporationInventors: Alejandro G. Schrott, Chung H. Lam, Eric A. Joseph, Matthew J. Breitwisch, Roger W. Cheek
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Publication number: 20110136293Abstract: The present invention provides a method to form Group IBIIIAVIA solar cell absorber layers on continuous flexible substrates. In a preferred aspect, the method forms a Group IBIIIAVIA absorber layer for manufacturing photovoltaic cells by providing a workpiece having a precursor layer formed over a substrate, the precursor layer including copper, indium, gallium and selenium; heating the precursor layer to a first temperature; reacting the precursor layer at the first temperature for a first predetermined time to transform the precursor layer to a partially formed absorber structure; cooling down the partially formed absorber structure to a second temperature, wherein both the first temperature and the second temperature are above 400° C.; and reacting the partially formed absorber structure at the second temperature for a second predetermined time, which is longer than the first predetermined time, to form a Group IBIIIAVIA absorber layer.Type: ApplicationFiled: December 7, 2009Publication date: June 9, 2011Applicant: SoloPower, Inc.Inventors: Serdar Aksu, Yuriy Matus, Rasmi Das, Mustafa Pinarbasi
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Publication number: 20110129957Abstract: A solar cell manufacturing method is provided. A solar cell manufacturing method according to an exemplary embodiment of the present invention includes: forming a first electrode on a substrate, forming a precursor including copper (Cu), gallium (Ga), and indium (In) on the first electrode, supplying selenium (Se) to the precursor to form a preliminary light absorption layer, depositing at least one of gallium or indium on the preliminary light absorption layer, supplying selenium (Se) to the preliminary light absorption layer deposited with the at least one of gallium and indium to form a light absorption layer and forming a second electrode on the light absorption layer.Type: ApplicationFiled: May 28, 2010Publication date: June 2, 2011Inventor: Byoung-Dong KIM