Abstract: In one method for monitoring a semiconductor wafer during a spin drying operation, a capacitance value between a capacitance sensor and the wafer is measured as the wafer is being spun to dry a surface thereof. When it is determined that the measured capacitance value has reached a substantially constant level, a signal is generated indicating that the surface of the semiconductor wafer is dry. In another method, light is directed toward a surface of the wafer as the wafer is being spun to dry a surface thereof. The light is directed such that the light that reflects off of the surface of the wafer is substantially perpendicular to the surface of the wafer. The intensity of the light reflected off of the surface of the semiconductor wafer is measured.

Abstract: An apparatus 1 for polishing wafers in which a first pushing means 50 for imparting a pushing force to a carrier 20 is arranged along the outer peripheral portion under the lower surface of a head body 40, and a second pushing means 60 for imparting a pushing force to a retainer ring 30 is arranged at a central portion under the lower surface of the head body. The first and second pushing means are formed of air bags 51 and 61.

Abstract: A composition and method of construction and use therefor in chemical-mechanical polishing (“CMP”) of one or more substrate assemblies is described. More particularly, a polishing solution comprising etchant, abrasive particles, and surfactant and methods of mixing to form and to dispense the polishing solution are described. One or more of the etchant, abrasive particles, and/or surfactant may comprise a liquid medium. Etchant, surfactant or abrasive particles may be premixed, mixed in-situ (“point of use mixing”), or any combination thereof. The surfactant may be ionic or nonionic. In particular, a polyoxyethylene may be used, and more particularly, a polyoxyethylene ester or ether may be used.

Abstract: A resilient pneumatic annular sealing bladder is coupled for fluid communication to a first pressurized pneumatic fluid to define a first pneumatic zone and is attached to a first surface of the wafer stop plate adjacent the retaining ring interior cylindrical surface to receive the wafer and to support the wafer at a peripheral edge. The resilient pneumatic annular sealing bladder defines a second pneumatic zone radially interior to the first pneumatic zone and extends between the first surface of the wafer stop plate and the wafer when the wafer is attached to the polishing head during a polishing operation and is coupled for fluid communication to a second pressurized pneumatic fluid. The wafer attachment stop plate is operative during non polishing periods to prevent the wafer from flexing excessively from an applied vacuum force used to hold the wafer to the polishing head during wafer loading and unloading operations.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a base, a flexible membrane extending beneath the base to provide a mounting surface for a substrate, and a retaining ring surrounding the mounting surface. An edge portion of the flexible membrane extends around an outer surface of a support structure. An outer surface of the support structure is tapered to reduce binding between the flexible membrane and the retaining ring. Alternately, there may be a relatively wide gap between the support structure and the retaining ring, or a sidewall portion of the flexible membrane may be reinforced.

Abstract: A semiconductor wafer is polished by a method which avoids constant instantaneous relative velocity between the wafer and an abrasive medium. The wafer is held by a tooling head and is contacted by an abrasive pad which is fixedly attached to a table. At least one of the tooling head and the table is movable relative to the other. A controller governs movement of the tooling head and/or the table according to a predetermined polishing pattern to initially effect a uniform instantaneous relative velocity between the wafer and the abrasive pad. The wafer is held by the tooling head in an initial orientation with respect to the abrasive pad. By changing the orientation of the wafer with respect to the abrasive pad, the instantaneous relative velocity changes for at least some point on the wafer.

Abstract: The present invention provides a precise polishing apparatus and method in which a polished body is polished by rotating a polishing pad having a diameter greater than that of the polished body while urging the polishing pad against the polished body in conditions that a center of the polished body is deviated from a rotation axis of the polishing pad and that the polishing pad is contacted with the entire polished surface of the polished body. The polished body may be a semi-conductor wafer.

Abstract: The present invention provides a retaining ring having an resilient liner for protecting the substrate edge from being damaged during chemical mechanical polishing and a method for making the same. Retainers made of wear resistant ceramics, such as alumina, provide better overall performance, including wear resistance, and reduced particle formation than other retaining ring materials. By incorporating a resilient liner, such as an epoxy, on the inner surface of the wear resistant ring, the substrate edge is protected from damage that can be easily caused by the hard surface of the ceramic alone.

Abstract: An apparatus and method are disclosed for planarizing a wafer in a carrier with adjustable pressure zones and adjustable barriers between zones. The carrier has an independently controlled central zone and concentric surrounding zones for distributing the pressure on the backside of a wafer while the wafer is being pressed against an abrasive surface in a chemical-mechanical polishing tool. The pressure zones may be created by mounting an elastic web diaphragm to a carrier housing that has a plurality of recesses. A corresponding plurality of elastic ring shaped ribs may extend from the web diaphragm opposite the recesses. The plurality of ring shaped ribs thereby defines a central zone surrounded by one or more concentric surrounding zones. The zones and barriers may be individually pressurized by utilizing corresponding fluid communication paths during the planarization process.

Abstract: At least two elastic wave sensors are disposed in contact with a workpiece such as a microstructure or an optical structure. Elastic waves generated during chemical mechanical polishing of the workpiece are monitored by using the elastic wave sensors. Chemical mechanical polishing conditions are set to achieve uniform chemical mechanical polishing, or an ending point of the chemical mechanical polishing is set based on the monitored signal by the elastic wave sensors, and a process is carried out for chemical mechanical polishing. By the process, a workpiece is polished uniformly to flatten steps in the workpiece or to flatten surface defects of a structure. Alternatively, by the process, a workpiece having a laminated structure is polished up to an interface of the laminated structure.

Abstract: A backing film having areas of different compressibilities is useful in polishing semiconductor wafers.

Abstract: The present invention relates to a polishing pad which is characterized in that it has a polishing layer of rubber A-type microhardness at least 80° and a cushioning layer of bulk modulus at least 40 MPa and tensile modulus in the range 0.1 MPa to 20 MPa, and to a polishing device which is characterized in that a semiconductor substrate is fixed to the polishing head, and an aforesaid polishing pad is fixed to the polishing platen so that the polishing layer faces the semiconductor substrate, and by rotating the aforesaid polishing head or the polishing platen, or both, the semiconductor substrate is polished.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: An apparatus is disclosed wherein polishing slurry is supplied to a polishing pad affixed to a polishing platen to thereby polish semiconductor wafers. This apparatus is provided with at least one slurry-supply mechanism for supplying a controlled amount of polishing slurry to an intermediate region between outer end and central regions of a semiconductor wafer and to the central region per se. Control is made such that the amount of flow of polishing slurry supplied to the intermediate region of the semiconductor wafer is larger than that supplied to the central region thereof.

Abstract: The present invention provides a precise polishing apparatus and method in which a polished body is polished by rotating a polishing pad having a diameter greater than that of the polished body while urging the polishing pad against the polished body in conditions that a center of the polished body is deviated from a rotation axis of the polishing pad and that the polishing pad is contacted with the entire polished surface of the polished body. The polished body may be a semi-conductor wafer.

Abstract: The wafer handling and support system disclosed herein does not use tape and is adapted for use in conjunction with a number of work stations. The wafer handling and support system includes a chuck plate comprised of a non-porous section surrounding a porous section and a robotic arm for transporting a chuck plate/wafer combination under vacuum. The chuck plate is sized to be carried by a wafer chuck and the porous section of the chuck plate is configured to support a wafer. The wafer may be held in place on the chuck plate by the application of a vacuum.

Abstract: A system and method for polishing semiconductor wafers includes a rotatable polishing pad movably positionable in a plurality of partially overlapping configurations with respect to a semiconductor wafer. A pad dressing assembly positioned coplanar, and adjacent, to the wafer provides in-situ pad conditioning to a portion of the polishing pad not in contact with the wafer. The method includes the step of radially moving the polishing pad with respect to the wafer.

Abstract: In a polishing apparatus having a cover body with fluid pressing mechanism, during polishing, vibration and migration of sticking portion between a retainer and a membrane generated in downstream of rotation of a polishing platen is prevented by reducing sticking force between the retainer and the membrane to less than force needed to wafer polishing with rotation of the cover body.

Abstract: Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to deposit a lubricating planarizing solution without abrasive particles onto a fixed-abrasive polishing pad having a body, a planarizing surface on the body, and a plurality of abrasive particles fixedly attached to the body at the planarizing surface. The front face of a substrate assembly is pressed against the lubricating planarizing solution and at least a portion of the fixed abrasive particles on the planarizing surface of the polishing pad. At least one of the polishing pad or the substrate assembly is then moved with respect to the other to impart relative motion therebetween. As the substrate assembly moves relative to the polishing pad, regions of the front face are separated from the abrasive particles in the polishing pad by a lubricant-additive in the lubricating planarizing solution.

Abstract: An ultrasonic transmitting unit transmits an ultrasonic wave to a slurry supply pipe. A polishing slurry is conveyed under pressure from a slurry supply tank to a slurry outlet via the slurry supply pipe and supplied from the slurry outlet to a surface of a polishing cloth. A wafer carrier holding a semiconductor wafer presses a surface of the semiconductor wafer against the surface of the polishing cloth coated with the polishing slurry and moves the semiconductor wafer relative to the polishing cloth to polish the surface of the semiconductor wafer. A discharged slurry flown out of the surface of the polishing cloth is discharged via a discharged slurry pipe. The application of the ultrasonic wave allows abrasive particles agglomerated in the polishing slurry in the slurry supply pipe to be re-dispersed into individual forms in the polishing slurry.

Abstract: A wafer polishing head utilizes a wafer backing member having a wafer facing pocket which is sealed against the wafer and is pressurized with air or other fluid to provide a uniform force distribution pattern across the width of the wafer inside an edge seal feature at the perimeter of the wafer to urge (or press) the wafer uniformly toward a polishing pad. Wafer polishing is carried out uniformly without variations in the amount of wafer material across the usable area of the wafer. A frictional force between the seal feature of the backing member and the surface of the wafer transfers rotational movement of the head to the wafer during polishing. A pressure controlled bellows supports and presses the wafer backing member toward the polishing pad and accommodates any dimensional variation between the polishing head and the polishing pad as the polishing head is moved relative to the polishing pad.

Abstract: A polishing apparatus has a guide (5) to be pressed against a polishing cloth (7) when polishing an object (1). Within the guide, a ring (3) is arranged between a backing plate (4) and a backing film (2). When the guide and polishing cloth are rotated to rub with each other, force of the periphery of the object of pressing the polishing cloth drops. The ring prevents such a force drop, thereby equalizing polishing rates over a surface of the object. Also provided is a polishing method applied to the polishing apparatus.

Abstract: Apparatus and method of polishing substrates using a carrier that does not contact the backside of the substrate during polishing. The apparatus preferably forms an air bearing between the substrate and the carrier plate during polishing. Alternatively, liquids, or combinations of liquids and gases may be used to form the bearing layer. When a water layer is formed, at least a portion of the carrier plate is formed as a microporous force applicator. The apparatuses are also capable of adjusting the force profile that is applied to the substrate so as to differentially polish different areas of the substrate. A containment ring is provided for horizontal containment of the substrate during polishing and to define an area within which the substrate precesses during polishing. A containment ring or barrier is also provided for precessing with a substrate during polishing.

Abstract: A polishing apparatus includes a polishing pad, a substrate holder, and a retainer ring. The polishing pad is adhered to a polishing table. The substrate holder urges, while it holds a substrate as a polishing target, a polishing target surface of the substrate against the polishing pad. The retainer ring is formed on a holding surface of the substrate holder to correspond to the circumference of the substrate. The retainer ring has a resin portion formed on its surface which is to come into contact with the polishing pad, and an annular resin holding portion for holding the resin portion and made of a material having a higher mechanical strength than the resin portion.

Abstract: A chemical mechanical polishing apparatus polishes the surface of a substrate to remove material therefrom. The apparatus includes a carrier, which positions the substrate against the rotating polishing pad. The carrier includes an integral loading member therein, which controls the load force of the substrate against the polishing pad. Multiple substrates may be simultaneously polished on a single rotating polishing pad, and the polishing pad may be rotationally oscillated to reduce the likelihood that any contaminants are transferred from one substrate to another along the polishing pad. A multi-lobed groove in the polishing pad may be used, in conjunction with a moving substrate, to polish the surface of the substrate.

Abstract: A finishing grindstone member 20 is fixed to a spindle 10 by a bolt. In the spindle 10, there is formed a tool mounting portion 25 into which a rough grindstone member can be mounted. Into the tool mounting portion 25, there can be mounted not only the rough grindstone member but also a cover member 36. After a silicone wafer is roughly ground using the rough grindstone member, when finish grinding the silicone wafer using the finishing grindstone member 20, the cover member 36 is mounted onto the tool mounting portion 25 to thereby prevent the tool mounting portion 25 from being soiled.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: The abrasive machine is capable of preventing deformation and bad abrasion of an abrasive cloth, maintaining flatness of an abrasive face of an abrasive plate and improving abrading accuracy. The abrasive machine comprises the abrasive plate and a holding unit for holding a work piece. In the holding unit, an inner head has a first concave section. An outer head has a second concave section. A holding plate is provided in the first concave section. An elastic holding member forms a first chamber. An outer enclosing member is provided to the outer head. An inner enclosing member is provided between the outer enclosing member and the inner head. A pressing member presses the abrasive face of the abrasive plate and encloses the holding plate. An elastic ring member a second chamber. A pressurizing unit pressurizes the chambers so as to press the work piece and the pressing member onto the abrasive face.

Abstract: Defects in semiconductor wafers caused by a wafer clamp ring are reduced by polishing the surfaces of the clamp ring that engage and apply clamping force to the wafer. A polishing tool includes a circular plate supported on the stationary base. A layer or pad of polishing material, such as silicon carbide diamond, is deposited over the plate. The clamp ring is placed on the plate such that clamping surfaces of the ring engage the polishing material on the plate, and the ring is rotated to effect polishing of the clamping surfaces.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus has a pusher for transferring the workpiece between a top ring of a polishing apparatus and the pusher. The polishing apparatus includes a turntable having a polishing surface, a top ring for supporting the workpiece to be polished and pressing the workpiece against the polishing surface, and a pusher for transferring the workpiece between the top ring and the pusher. The pusher comprises a workpiece support for supporting the workpiece, an actuating unit for moving the workpiece support in a vertical direction, a sliding mechanism movable within a horizontal plane, and a positioning mechanism for positioning the workpiece support and the top ring with respect to each other in association with the sliding mechanism when the workpiece is transferred between the workpiece support and the top ring.

Abstract: Provided are an apparatus and method for concurrently pad conditioning and wafer buffing on a single station of a CMP apparatus. In a preferred embodiment, the apparatus includes a two-sided conditioning/buffing device having a pad conditioner on one side and a buff pad on the other. In operation, the device is inserted between a polishing pad and a polished wafer following CMP. A differential velocity is developed between the pad conditioner and the polishing pad, for example, by contacting the pad conditioner with a rotating or orbiting polishing pad. Concurrently, the polished wafer is contacted with the buff pad on the other side of the device, and a differential velocity is developed between the two, for example, by rotating the wafer, so that the wafer is buffed.

Abstract: Planarizing machines, carrier heads for planarizing machines and methods for planarizing microelectronic-device substrate assemblies in mechanical or chemical-mechanical planarizing processes. In one embodiment of the invention, a carrier head includes a backing plate, a bladder attached to the backing plate, and a retaining ring extending around the backing plate. The backing plate has a perimeter edge, a first surface, and a second surface opposite the first surface. The second surface of the backing plate can have a perimeter region extending inwardly from the perimeter edge and an interior region extending inwardly from the perimeter region. The perimeter region, for example, can have a curved section extending inwardly from the perimeter edge of the backing plate or from a flat rim at the perimeter edge. The curved section can curve toward and/or away from the first surface to influence the edge pressure exerted against the substrate assembly during planarization.

Abstract: A wafer polishing head for planarizing a wafer. The wafer polishing head comprises a carrier, a retaining ring, a first pressure chamber, a second pressure chamber and an automatic control system. The retaining ring is surrounding the carrier. The first pressure chamber having a first inner pressure is disposed above the retaining ring. The second pressure chamber having a second inner pressure is disposed on the carrier. The automatic control system is respectively coupled to the first pressure chamber and the second pressure chamber.

Abstract: An apparatus for removably positioning a semiconductor wafer for polishing. The apparatus including a rotating member with a major lower surface having a plurality of recesses each with a conduit path radially leading to a smaller circular pattern of portholes disposed near the center of the rotating member, the recesses are arranged in concentric segments. A nozzle plate covers the major lower surface defining a plurality of chambers therebetween. The nozzle plate includes a radial pattern of gas dispensing orifices which are aligned centrally relative to each chamber. A preset regulated gas pressure communicates with each orifice pattern to exert an opposing force against a force urging the article against the polishing pad. At least two of the orifice patterns have gas pressures adjusted independently from one another so that independent pressure control creates varying forces to be exerted against the back side of the wafer.

Abstract: The purpose of the present invention is to provide a carrier mechanism, that polishes the wafer equally across the wafer surface by circumventing the problems caused by “pad rebound” or “waving phenomenon” during polishing. In doing this, pressure against the pad at the edge of the wafer will be equal to that at the center resulting in uniform pressure on the wafer during polishing and even planarization of thin film semiconductor material. One embodiment of the present invention uses a wider extension ring causing the pressure stress concentration point to occur just inside the outer edge of the extension ring and away from the wafer. This allows for constant pressure application to the surface of the wafer and results in uniform material removal across the wafer surface. A second embodiment of the present invention uses a wider extension ring having a slurry channel and a plurality of passageways.

Abstract: Polishing chucks, semiconductor wafer polishing chucks, abrading methods, polishing methods, semiconductor wafer polishing methods, and methods of forming polishing chucks are described. In one embodiment, a polishing chuck includes a body dimensioned to hold a work piece, and a multi-positionable, force-bearing engagement surface is positioned on the body to engage at least a portion of a work piece held thereby. The surface has an undeflected position, and is bi-directionally deflectable away from the undeflected position. In another embodiment, a yieldable engagement surface is provided on the body and has a central area and a peripheral area outward of the central area. One of the central and peripheral areas is movable, relative to the other of the areas to provide both inwardly and outwardly flexed surface configurations. In yet another embodiment, a generally planar surface is provided on the body and positioned to receive the work piece thereagainst.

Abstract: Polishing chucks, semiconductor wafer polishing chucks, abrading methods, polishing methods, semiconductor wafer polishing methods, and methods of forming polishing chucks are described. In one embodiment, a polishing chuck includes a body dimensioned to hold a work piece, and a multi-positionable, force-bearing engagement surface is positioned on the body to engage at least a portion of a work piece held thereby. The surface has an undeflected position, and is bi-directionally deflectable away from the undeflected position. In another embodiment, a yieldable engagement surface is provided on the body and has a central area and a peripheral area outward of the central area. One of the central and peripheral areas is movable, relative to the other of the areas to provide both inwardly and outwardly flexed surface configurations. In yet another embodiment, a generally planar surface is provided on the body and positioned to receive the work piece thereagainst.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane with a lip portion to engage a substrate to form a seal for improved vacuum-chucking.

Abstract: A fixture for holding a workpiece in a machining apparatus comprises at least one opening having at least one flexible side for elastically holding the workpiece and a slot adjacent each of the at least one side for allowing the side to flex.

Abstract: Lapping or polishing at high speeds with fine abrasive particles offer significant advantages in the speed of lapping, savings of time in lapping, and smoothness in the finished articles. An improved lapping system comprises a lapper platen system comprising: a) a frame (e.g., having a total weight of at least 200 kg) supporting a work piece holder b) a rotatable platen having an abrasive surface comprising an abrasive sheet secured to said platen, said platen being capable of providing surface feet per minute speeds on in outer edge of at least about 1,500 surface feet per minute; and c) a work piece holder which is movable on said frame.

Abstract: A carrier head for chemical mechanical polishing with a retaining ring having an inclined inner surface. The force of the edge of the substrate against the inclined surface causes a reactive force having a vertical component on the edge of the substrate. This vertical force can reduce the edge effect.

Abstract: The present invention is a conditioning ring for conditioning a polishing pad in a chemical-mechanical polishing machine. The conditioning ring is comprised of a ring having a diameter and a conditioning surface substantially parallel to a plane defined by the diameter. The conditioning ring has an inner radius surface to the plane defined by the diameter, wherein the inner radius surface is adapted to accept a wafer. The conditioning ring has an outer radius surface opposite the inner radius surface and an upper surface opposite the conditioning surface. The chemical mechanical polishing machine polishes the wafer by moving the polishing pad with respect to the wafer while the wafer is in contact with the polishing pad. The conditioning surface is adapted to frictionally contact the polishing pad.

Abstract: A retaining ring is configured for use with an apparatus for polishing a substrate. The substrate has upper and lower faces and a perimeter. The apparatus has a movable polishing pad with an upper polishing surface for contacting and polishing the lower face of the substrate. The retaining ring has a retaining face for engaging and retaining the substrate against lateral movement and a bottom face for contacting the polishing surface of the polishing pad. The bottom face of the retaining ring extends downward from an inner portion adjacent the retaining face to a lowermost portion radially outboard of the retaining face.

Abstract: In a polishing machine for simultaneous double-sided polishing of workpieces between upper and lower polish tables, the upper polish table has a hollow center telescopically receiving in a drive hub supported from below. The upper polish plate is suspended by a lifting rod from a double-ended main lifting cylinder having upper and lower ends secured to a frame extending from the lower polish table.

Abstract: A carrier and polishing apparatus enabling high precision polishing of a workpiece and enabling prevention of leak contamination and damage to the workpiece. A carrier 1 is provided with a carrier body 2, a pressure chamber 3, and a fluid passage portion 4 and a plurality of valve portions 5 are specially provided in the pressure chamber 3. Due to this, when the inside of the pressure chamber 3 becomes a negative pressure state, the valve portions 5 open and the wafer W is picked up by suction, while when it becomes a positive pressure state, the valve portions 5 close and the air in the pressure chamber 3 uniformly presses against the wafer W. Further, since the valve portions 5 close in the positive pressure state, the air in the pressure chamber 3 will not flow to the outside.

Abstract: This invention involves a containment ring that may be used in conjunction with a substrate carrier used for polishing a substrate to give the substrate a smooth and planar surface. The containment ring is generally constructed such that it tilts independently of the substrate carrier platen that supports the substrate during polishing. The containment ring is constructed with a surface that supports a small perimeter portion of the back side of the substrate during polishing and has an enclosed area sufficient to allow the substrate to precess.

Abstract: The present invention is directed to polishing pads useful in determining an end to the useful wear life thereof. In a simple embodiment of the present invention, a polishing pad that is used with slurries is dyed on one side in a manner that causes the dye to permeate the pad to a limited depth that does not cause total coloring. Another embodiment of the present invention involves a fixed abrasive pad that has fixed abrasives embedded into the pad to a selected depth where at least one color level is within the portion of the pad that contains the fixed abrasives. After dyeing the pad, the pad is attached to the polishing platen. During the polishing operation, a color change signals a time to stop the polishing operation and change the pad. With multiple colors in the pad, limited only by the ability to dye the pad with uniform depth levels, characteristic wear patterns can be observed and adjustments made accordingly to prolong and optimize pad life.

Abstract: In a surface-grinding method for a workpiece, for example a semiconductor wafer, it is possible to correct or improve waviness and bow and to obtain a semiconductor wafer having no thickness dispersion. Besides, wafer processing to higher precision than that conventionally attained is achieved and at the same time simplification of the processing method and thereby reduction of the cost are also achieved. In the present invention, while the workpiece is fixed for supporting at one surface by the fixedly supporting means of a surface-grinding apparatus, the other surface of the workpiece is surface-ground, where the workpiece adheres on the upper surface of a base plate by the aid of adhesive material and the base plate is fixedly supported by the lower surface of itself on the fixedly supporting means.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing section for polishing a surface of a workpiece, a cleaning section for cleaning the workpiece which has been polished, a first liquid leakage sensor provided in the polishing section for detecting a liquid leakage which occurs in the polishing section, and a second liquid leakage sensor provided in the cleaning section for detecting a liquid leakage which occurs in the cleaning section. The polishing apparatus further includes a controlling device for stopping the supply of liquid to the polishing section or the cleaning section in which the liquid leakage occurs when either one of the first and second liquid leakage sensors detects the liquid leakage.

Abstract: A wafer polisher head drive includes a head drive housing; a head portion extending from the housing for mounting an unpolished wafer when the head drive housing and head portion are in a horizontal orientation; a pivot mechanism extending from the head drive housing for pivoting the head drive housing and the head portion from the horizontal orientation to a vertical orientation juxtaposed to a transverse vertical portion of a continuous rotating polishing belt; a drive in the housing for moving the head portion and a mounted wafer outwardly from the housing against the transverse vertical portion of the rotating polishing belt; and a drive in the housing for rotating the head portion and the mounted wafer. The head drive housing may be pivoted from the vertical orientation in a sweeping arc extending perpendicularly from the belt transverse vertical portion or in a swinging arc extending parallel from the belt transverse vertical portion.