Abstract: Semiconductor processor systems, systems configured to provide a semiconductor workpiece process fluid, semiconductor workpiece processing methods, methods of preparing semiconductor workpiece process fluid, and methods of delivering semiconductor workpiece process fluid to a semiconductor processor are provided. One aspect of the invention provides a semiconductor processor system including a process chamber adapted to process at least one semiconductor workpiece using a process fluid; a connection coupled with the process chamber and configured to receive the process fluid; a sensor coupled with the connection and configured to output a signal indicative of the process fluid; and a control system coupled with the sensor and configured to control at least one operation of the semiconductor processor system responsive to the signal.

Abstract: A polishing apparatus and a polishing method capable of suppressing an excessive polishing of an outer circumferential edge surface of a surface to be polished of a polished object to be polished due to elastic deformation of a polishing tool and capable of stabilizing a polishing rate, wherein polishing is carried out by inclining a shaft of a polishing tool with an angle &agr; toward a direction of advance of the movement of the polishing tool to a direction perpendicular to a holding surface of a rotation table, then inclining the shaft of the polishing tool in a direction reducing elastic deformation of a polishing surface in a region where the polishing surface rides up on an outer circumferential edge of a surface to be polished of a wafer to the direction perpendicular to the holding face.

Abstract: An object of the present invention is to provide a lapping machine in which abrasive grains can be efficiently and completely removed from a lapping plate. In the lapping machine of the present invention, a lapping plate has a lapping face and rotates about a rotary shaft. A moving member has a wiping face extended in a longitudinal and moves, in a plane parallel to the lapping face of the lapping plate, in the direction perpendicular to the wiping face. A driving mechanism moves the moving member. With this structure, the moving member securely catches and removes foreign substances from the lapping plate. The foreign substances left can be completely removed in a short time and the working efficiency of the lapping steps can be highly improved.

Abstract: There is disclosed is a chemical mechanical polishing apparatus having a inexpensive simplified configuration, which minimizes consumption of slurry material and securely enabling washing of a polishing pad. By virtue of the provision of the inventive slurry stoppers, the chemical mechanical polishing apparatus prevents slurry from vainly falling off from the polishing pad in the course of polishing a wafer, and yet, while washing the polishing pad, in order that slurry not to remain on the polishing pad, and yet, in order that an end of adjoining slurry stoppers can be disposed across predetermined intervals in the inner and outer directions of the polishing pad, a plurality of slurry stoppers are retained to the polishing pad across substantially equal angular intervals along external periphery of the polishing pad by applying adhesive agent for example.

Abstract: A chemical mechanical polishing apparatus polishes the surface of a substrate to remove material therefrom. The apparatus includes a carrier, which positions the substrate against the rotating polishing pad. The carrier includes an integral loading member therein, which controls the load force of the substrate against the polishing pad. Multiple substrates may be simultaneously polished on a single rotating polishing pad, and the polishing pad may be rotationally oscillated to reduce the likelihood that any contaminants are transferred from one substrate to another along the polishing pad. A multi-lobed groove in the polishing pad may be used, in conjunction with a moving substrate, to polish the surface of the substrate.

Abstract: A method and apparatus for providing a low cost contact burnish slider is disclosed that can remain in contact or at the initial low flying heights even as the pad surfaces and leading edges wear. The burnish slider includes a body having a leading edge and a trailing edge and an air bearing surface being configured at the leading edge of the body to cut disk asperities as the slider flies and configured away from the leading edge to maintain a flying attitude wherein the leading edge is near the data recording surface and to provide restoring forces to maintain the flying attitude. The air bearing surface may include a front pad proximal to the leading edge and a rear pad distal to the leading edge. Alternatively, the air bearing surface may include two front pads proximal to the leading edge on opposite sides of the body and two rear pads distal to the leading edge and disposed on opposite sides of the body. The front and rear pad(s) extends substantially across the body of the slider.

Abstract: A process for producing semiconductor wafers by double-sided polishing between two rotating, upper and lower polishing plates, which are covered with polishing cloth, while an alkaline polishing abrasive with colloidal solid fractions is being supplied, the semiconductor wafers being guided by carriers which have circumferential gear teeth and are set in rotation by complementary outer gear teeth and inner gear teeth of the polishing machine, which is distinguished by the following process steps:

Abstract: A set of spacing clips and a method of use therefor are described. Polishing pads utilized in wafer polishing machines, such as the MirraTrak™ and MiraMesa™ polishers made by Applied Materials, Inc., must be centered on polisher's platens. The polishing pads are generally of a larger diameter than the platens, and are held on the platen by a pressure-sensitive adhesive present on the backside of the pads. Each centering clip has two surfaces that are spaced apart from each other by the distance that a polishing pad will overhang the platen when properly centered on the platen. One surface of each of two centering clips is butted up against the edge of the circular pad and clamped to the pad. As the pad is lowered into place on the circular platen, the other surface of each clip is butted against the outside edge of the platen, ensuring that the pad will be centered on the platen when the adhesive backed pad contacts the platen.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus comprises a turntable having a polishing surface, a top ring for holding a workpiece and pressing the workpiece against the polishing surface, a holding surface of the top ring for holding the workpiece, and a retainer ring for retaining the workpiece within the holding surface of the top ring. The holding surface is deformable by fluid having variable pressure, and the retainer ring presses the polishing surface under a variable pressing force.

Abstract: In a chemical-mechanical polishing machine (101) where a polishing head (100) holds a wafer (150) against a polishing pad (140), a retaining ring (300) that surrounds the wafer (150) has an open chamber (350) to distribute pressurized slurry (144) to the polishing pad (140) and to the periphery (153) of the wafer (150).

Abstract: A carrier head for a chemical mechanical polishing system includes a flexible membrane with a substrate receiving surface, a sensor mechanism to determine if a substrate is properly attached to the carrier head, and means for preventing fluid that may be located between the substrate and the flexible membrane from interfering with the substrate detection mechanism.

Abstract: A fixed abrasive finishing element having a continuous phase of synthetic resin and discrete synthetic resin particles dispersed in the continuous phase of synthetic resin is described. The synthetic resin particles have abrasive particles dispersed therein. A compatibilizing agent can be used to enhance their finishing properties. The finishing elements are useful for polishing semiconductor wafers. Planarization and localized finishing can be improved using these finishing elements. Unwanted surface defects can be reduced. Methods to finish a semiconductor wafer using these finishing elements are described.

Abstract: A repair machine for compact disk is used for cleaning, maintaining, and repairing compact disks. The processing procedure is basically a mechanical method by: placing a scratched compact disk on a CD turntable of the repair machine, grinding it with a grinding wheel and dripping grinding agent on the grinding wheel continuously. The grinding agent is classified in three categories: coarse, middle, and fine (polishing), for trimming scratch to renew a marred compact disk.

Abstract: A polishing head (200) for a chemical-mechanical polishing machine that holds a semiconductor wafer (150) against a polishing pad (140) has a chuck (295) with a pressure chamber (210) to apply a down force substantially equally to the wafer backside (152). An electrode arrangement (270) within the chamber (210) is located coplanar to the wafer (150) to provide compensation to wafer or chuck irregularities by applying a compensation force having a distribution corresponding to the irregularities.

Abstract: The burnishing head for hard disk processing includes a solid body having generally rectangular surfaces, including an upper surface, a burnishing pad surface, a front surface, a rear surface and two side surfaces. A plurality of burnishing pads are disposed upon the burnishing pad surface. The pads are shaped such that each pad has a burnishing edge that is generally parallel to said front surface and therefore orthogonal to the direction of media travel. The burnishing pads are preferably configured such that one frontward leading pad is centrally disposed proximate the front surface of the head, followed by two middle pads that are disposed in a spaced apart relationship. A single centrally disposed rear middle pad is formed behind the two middle pads, and two rear pads are disposed in a spaced apart relationship at the rear surface of the head. In the preferred embodiment the pads are generally triangular in shape and the outer surface of the leading and rearward pads is tapered.

Abstract: This invention pertains to a polishing apparatus for polishing a semiconductor wafer. The apparatus comprises a storage section that is capable of receiving a workpiece to be polished and a polished workpiece. The polishing unit that polishes the workpiece includes a primary polishing table and a secondary polishing table, wherein the polishing surface of the secondary polishing table is constructed to be arranged such that at least a portion of a surface of the workpiece being polished by the polishing surface of the secondary polishing table extends beyond an edge of the polishing surface of the secondary polishing table. Also provided is a film thickness measuring device, which measures the thickness of a film formed on a polished workpiece while the polished workpiece is held by a top ring above a pusher.

Abstract: The present invention system and method facilitates efficient material deposition and wafer planarization during IC wafer fabrication. The present invention is particularly useful in facilitating efficient copper deposition and manufacturing of interconnections between components of an IC. A deposition polishing system and method of the present invention performs copper deposition and polishing concurrently. One embodiment of a deposition polishing system comprises a wafer holder, polishing pad component, and CMP plating bath. The CMP plating bath is a container for holding solutions utilized in plating processes (e.g., electroplating, electroless plating, etc.) to deposit metallic material (e.g., copper) on a wafer.

Abstract: A chemical-mechanical polishing slurry made by mixing a ferric salt oxidizer with a solution to produce a mixture with a dissolved ferric salt oxidizer, filtering the mixture to remove most preexisting particles therein that exceed a selected particle size, adding a suspension agent to the mixture, and adding abrasive particles to the mixture after filtering the mixture. Advantageously, when polishing occurs, scratching by the preexisting particles is dramatically reduced.

Abstract: An apparatus and method for re-surfacing compact discs. The method is a two-step method in which the disc to be re-surfaced is first placed on a shaft. A resilient pad supports an abrasive medium and is positioned so the abrasive medium overlaps only the protective layer of the CD. The disc and abrasive material are rotated in opposite directions at about the same speed to remove deeper blemishes in a wet operation. Subsequent polishing is accomplished in a similar manner using a polishing compound instead of an abrasive. The re-surfacing and polishing apparatus each have motor driven shafts which are parallel and spaced apart and support the CD and pad in a cabinet. A transparent cover extends across the top of the cabinet.

Abstract: A burnishing head configured to provide extremely close control of the burnishing height, to aerodynamically eject particles generated by the burnishing process from beneath the burnishing head onto the disc surface, whence they can be swept from the disc by centripetal force, and to optimize the tribological relationship between the burnishing head and a disc being burnished. The burnishing head includes a plurality of burnishing pads arranged in an elliptical pattern, with the actual burnishing surface of the burnishing pads being either ion milled to provide a closely controlled surface texture, or lapped to a extremely smooth surface. The shape of the individual burnishing pads is also formed by the process of ion milling, and is either elliptical, or, preferably, an aerodynamic teardrop shape, which acts to aerodynamically displace generated particles from beneath the burnishing head.

Abstract: A patterned polishing pad adapted for use in a wafer polishing machine. The patterned polishing pad has a polishing surface adapted to contact frictionally a semiconductor wafer being polished in a chemical mechanical polishing machine. The polishing surface has a first region and a second region. The first region is adapted to contact frictionally the wafer and achieve a first process effect. The second region is adapted to contact frictionally the wafer and achieve a second process effect. The surface of the second region extends a predetermined protrusion amount above the polishing surface with respect to the surface of the first region.

Abstract: A disk cleaner includes a polishing member which is adapted to be rotated while being engaged with a surface of the disk, thereby to polish the surface of the disk. The polishing member is disposed such that the rotational axis of the polishing member is kept perpendicular to the surface of the disk, thereby to cause the disk to rotate in one direction due to a frictional force between the polishing member and the surface of the disk. The rotational axis of the polishing member is spaced apart from a rotational axis of the disk in the radial direction of the disk, whereby only part of the polishing member engages the surface of the disk.

Abstract: The invention provides structure and method for achieving a uniformly polished or planarized substrate such as a semiconductor wafer including achieving substantially uniform polishing between the center of the semiconductor wafer and the edge of the wafer. In one aspect the invention provides a polishing apparatus including a housing, a carrier for mounting a substrate to be polished, a retaining ring circumscribing the carrier for retaining the substrate, a first coupling attaching the retaining ring to the carrier such that the retaining ring may move relative to the carrier, a second coupling attaching the carrier to the housing such that the carrier may move relative to the housing, the housing and the first coupling defining a first pressure chamber to exert a pressure force against the retaining ring, and the housing and the second coupling defining a second pressure chamber to exert a pressure force against the subcarrier. In one embodiment, the couplings are diaphragms.

Abstract: A device for chemical-mechanical polishing. The device can be applied to a chemical polishing table spinning in a fixed direction and a polishing pad above of it. A chemical-mechanical polishing device according to the present invention is at least comprised of a main body of conditioner with a plurality of mounting pads, wherein each mounting pad is mounted with the diamond granules and located on the lower surface of conditioner, distributed on the rim of main body of each mounting pad. It can contact with polishing pads when cleaning the polishing pads and a number of cavities are across the upper and lower surfaces of each main body of conditioner and distributed between each mounting pads as well. When using the conditioners to clean out the polishing pads, the de-ionized water will flow through the cavities to wash off the acid or basic slurry to eliminate the destruction made by the solders around the diamond granules to extend the durability of the conditioner.

Abstract: A polishing apparatus includes a holder for holding a polished body with a polished surface thereof facing upwardly, and a polishing head for holding a polishing pad having a polishing surface having an area smaller than an area of the polished surface while contacting the polishing pad with the polished surface and for rotating the polishing pad around its rotation axis. The polishing head is provided with a driver for revolving the polishing pad around a revolution axis, and the revolution axis and the rotation axis are positioned so that a distance between the revolution axis and the rotation axis becomes smaller than a radius of the polishing pad.

Abstract: A burnishing head configured to provide extremely close control of the burnishing height, to minimize stiction between the burnishing head and a disc being burnished, and to optimize the tribological relationship between the burnishing head and a disc being burnished. The burnishing head includes one or more spacer pads, associated with selected ones of the burnishing pads on the burnishing head, which remain in contact with the surface of a disc being burnished. The height from the contact surface of the spacer pad to the contact surface of the burnishing pad determines the effective burnishing height. The burnishing head also includes moats, or recessed areas, surrounding the burnishing pads to minimize the stiction caused by generation of a liquid meniscus between the disc and contacting elements of the burnishing head, and which act as collection points for particulates generated by the burnishing process.

Abstract: A level flying burnishing head includes a plurality of burnishing pads, e.g., thirteen, that are symmetrically arranged about orthogonal axes on the bottom surface of the burnishing head. The burnishing pads may have a polygonal geometry having at least four sides. The corners between the sides of the burnishing pads may be rounded. The separation between the burnishing head is configured to fly substantially parallel to the surface of the disk that it is burnishing. The burnishing head may have no taper on the leading edge to achieve the level flying condition.

Abstract: A chemical mechanical polishing apparatus polishes the surface of a substrate to remove material therefrom. The apparatus includes a carrier, which positions the substrate against the rotating polishing pad. The carrier includes an integral loading member therein, which controls the load force of the substrate against the polishing pad. Multiple substrates may be simultaneously polished on a single rotating polishing pad, and the polishing pad may be rotationally oscillated to reduce the likelihood that any contaminants are transferred from one substrate to another along the polishing pad. A multi-lobed groove in the polishing pad may be used, in conjunction with a moving substrate, to polish the surface of the substrate.

Abstract: The burnishing head for hard disk processing includes a solid body having generally rectangular surfaces, including an upper surface, a burnishing pad surface, a front surface, a rear surface and two side surfaces. A plurality of burnishing pads are disposed upon the burnishing pad surface. The pads are shaped such that each pad has a burnishing edge that is generally parallel to said front surface and therefore orthogonal to the direction of media travel. The burnishing pads are preferably configured such that two frontward leading pads are disposed proximate the front surface in a spaced apart relationship and one leading middle pad is disposed rearwardly of the two frontward leading pads and generally between the two frontward leading pads. Two rear pads are disposed generally rearwardly of the leading middle pad in a spaced apart relationship, and one rearward pad is disposed rearwardly of the two rear pads and generally between the two rear pads.

Abstract: In a roll grinding machine (2) for profile grinding of rolls with a constructionally simple device for a very precise adjustment of a grinding wheels (4) supported on a grinding spindle (7) tangentially with respect to a roll profile, the grinding spindle (7) is arranged in a rotatable sleeve (8) the longitudinal axis (9) of which is inclined at an angle (10) relative to the longitudinal axis (11) of the grinding spindle (7).

Abstract: Methods and apparatus for chemical mechanical polishing of substrates, such as semiconductor wafers, which employ retaining rings to hold a substrate in place during the polishing process. The retaining rings have surface characteristics that may be used to improve polishing uniformity, especially at a wafer periphery, and/or to improve removal rate of a chemical mechanical polishing (“CMP”) system. The surface characteristics may be recesses and/or protrusions on the pad-facing surface of a CMP retaining ring, which during polishing contact and act to flatten a CMP polishing pad beneath the substrate. Near the edge the surface characteristics may also condition the surface of a polishing pad during polishing and may be further configured to improve slurry transport.

Abstract: A multi-platen chemical-mechanical polishing system is used to polish a wafer. The wafer is polished at a first station. During polishing, an endpoint is detected. The endpoint is detected by generating optical radiation by a first light source. The first optical radiation travels through a translucent area in a surface of a first platen and travels through a first polishing pad. After being reflected by the wafer, the optical radiation returns through the first polishing pad through the translucent window to a first optical radiation detector. The first polishing pad has a uniform surface in that no part of the surface of the first polishing pad includes transparent material through which non-scattered optical radiation originating from the first light source can pass and be detected by the first optical radiation detector. Optical radiation that travels through the first polishing pad and is detected by the first optical radiation detector is haze scattered by inclusions within the first polishing pad.

Abstract: A chemical mechanical polishing system is provided having one more polishing stations. The polishing stations include a platen and pad mounted to an upper surface of the platen. The upper surface of the platen is patterned to define a raised area and a recessed area. The raised area provides a rigid mounting surface for the pad and the recessed area provides the pad a desired degree of flexibility and compliance of the pad when brought into contact with a substrate.

Abstract: A polishing apparatus comprises a polishing member that has a wide stable polishing range to perform effective polishing, even if a rotation axis moves away from the edge of a workpiece. A polishing member holder holds the polishing member, and a workpiece holder holds the workpiece to be polished. A drive device produces a relative sliding motion between the polishing member and the workpiece. At least one holder of either the polishing member holder or the workpiece holder is rotatable about a rotation axis and is tiltable with respect to other holder. Such one holder is provided with a pressing mechanism to stabilize orientation or desired posture of the one holder by applying an adjusting pressure to the one holder at a location away from the rotation axis.

Abstract: A part clamping fixture assembly for locating and holding a knuckle/hub assembly, including a knuckle, a wheel hub and a bearing, for final finishing of a flange face of the wheel hub includes a top portion, a first housing portion, and a second housing portion. The first housing portion is intended to engage a first appendage of the knuckle and the second housing portion is intended to engage a second appendage portion of the knuckle. The fixture assembly also includes a puller member having an upper end for communicating with a drive mechanism in order to rotate the knuckle/hub assembly and a lower end opposite the upper end. An encasing is disposed around the puller member and has a lower portion for contacting the bearing.

Abstract: The invention relates to a grinding wheel for machining metal circular-saw blades at relatively high rotational speeds, which have machining areas which contain in particular hard materials, such as for example diamond or cubic boron nitride. The grinding wheels according to the invention are intended in particular to improve the centring at relatively high rotational speeds, and consequently to prevent true running problems as far as possible. The base body of the grinding wheel is of contoured design, at least on one side, in the radially outer area of a tool-mounting bore, and at least one centring element can be designed to engage in a formfitting manner in the correspondingly designed contours, so that the grinding wheel and a centring element on a tool spindle of a grinding machine are held together in a force-fitting manner.

Abstract: In a chemical-mechanical polishing (CMP) process, semiconductor substrates are rotated against a polishing pad in order to planarize substrate layers. The condition of the polishing pad directly affects the polishing rate of material removal and uniformity of removal from the semiconductor wafer. Conditioning of the polishing pad surface with an abrasive improves polishing uniformity and rates, however, it has the detrimental affect of removing a quantity of pad material. A method and apparatus for monitoring polishing pad wear during processing is developed to extend the pad's useful life, and maintain pad uniformity. This is accomplished in the present invention by measuring and monitoring the diminished pad thickness using a non-intrusive measurement system, and creating a closed-loop system for adjusting the chemical-mechanical polishing tool process parameters.

Abstract: A burnishing head for burnishing the surface of magnetic or magneto-optical memory disks is described. The burnishing head comprises a plurality of curved burnishing pads symmetrically arranged on the bottom surface of the head. In one embodiment, there are thirteen circular burnishing pads symmetrically arranged on the bottom surface of a square burnishing pad in such a way that there is no dedicated leading edge of the burnishing head. The area between the curved burnishing pads is wide enough to allow the free flow of air to help the escape of debris created during burnishing. The burnishing head has no tapered leading edge. The burnishing pad flies parallel to the surface of the disk in a level manner, such that all burnishing pads are simultaneously used.

Abstract: There is disclosed a polishing machine capable of flattening a wafer surface uniformly. The machine can modify the flatness of the surface during polishing. The machine has an index table and a polishing head 18. The table attracts the wafer to be polished such that the wafer faces upward. The table rotates to the primary polishing station. The polishing head has a pressure application cylinder 21 and a base plate 22. The cylinder is held to a carrier at a given angle. The base plate holds polishing cloth 24 and is mounted to the cylinder so as to be swingable in three dimensions. The cloth touches the wafer surface and rotates at a high speed, thus flattening it. At the second polishing station, polishing cloth attached to another polishing head touches the wafer surface and rotates at a high speed, thus finally polishing the wafer surface.

Abstract: Apparatus for selectively polishing an elevated area of the surface of a semiconductor wafer. The apparatus makes a topographical map of the surface of a semiconductor wafer to identify a high area on the surface; positions polishing apparatus over and in contact with the elevated area; and, moves the polishing apparatus and/or the wafer to polish selectively only the elevated area of the wafer surface.

Abstract: A polishing apparatus includes a polishing layer formed of forming resin and having a plurality of mechanical polishing particles contained in the polishing layer so as to be partially exposed from a polishing surface thereof. An object to be polished and the polishing layer are rotated relative to each other so that the object is polished with the mechanical polishing particles, in a state in which the object is allowed to contact with the polishing surface of the polishing layer.

Abstract: A compact polishing apparatus has been developed which can be installed in a relatively small space, and is highly rigid without increasing the weight of the apparatus. The polishing apparatus comprises a polishing table, a top ring head for rotatably holding a substrate, a substrate transfer device for transferring the substrate to and from a substrate storage section, a substrate delivery device for delivery of the substrate between the top ring head and the substrate transfer device at a delivery position outside of the polishing table. A guide rail device is laid between the polishing table and the substrate delivery device, and a carriage device movable along the guide rail device is provided for carrying the top ring device thereon.

Abstract: A modified chemical-mechanical polishing apparatus is described. The apparatus includes: (i) a polishing pad 104 providing a surface against which a surface of an integrated circuit substrate 116 is polished; (ii) an anode 103 on which the polishing pad is secured, the anode including an electrolyzable conductive material; and (iii) a voltage source 106 electrically connecting the anode to the integrated circuit substrate in such a way that when a voltage is applied from the voltage source in the presence of slurry 114 admixed with an electrolyte composition on the polishing pad, an electrolytic cell results in which the conductive material deposits on the surface of the integrated circuit substrate. A process of depositing a conductive material on and polishing a surface of an integrated circuit substrate simultaneously is also described.

Abstract: The first air guide groove is formed at the bottom of a carrier along the inner circumference of a circle whose radius corresponds to the maximum radius of a wafer. The air is supplied to the outer periphery of the wafer through the first air guide groove to form a pressure air layer between the carrier and the wafer. The formation of the pressure air layer makes the air pressure applied to the wafer uniform on the entire surface of the wafer, and thus, the wafer can be polished under a uniform pressure force. The second air guide groove is formed along the inner circumference of a circle whose radius corresponds to the minimum radius of the wafer, and therefore, the wafer with an orientation flat or notch can be polished under a uniform pressure force.

Abstract: A wafer polisher head drive includes a head drive housing; a head portion extending from the housing for mounting an unpolished wafer when the head drive housing and head portion are in a horizontal orientation; a pivot mechanism extending from the head drive housing for pivoting the head drive housing and the head portion from the horizontal orientation to a vertical orientation juxtaposed to a transverse vertical portion of a continuous rotating polishing belt; a drive in the housing for moving the head portion and a mounted wafer outwardly from the housing against the transverse vertical portion of the rotating polishing belt; and a drive in the housing for rotating the head portion and the mounted wafer. The head drive housing may be pivoted from the vertical orientation in a sweeping arc extending perpendicularly from the belt transverse vertical portion or in a swinging arc extending parallel from the belt transverse vertical portion.

Abstract: A chemical mechanical polish apparatus (FIG. 3B) for planarizing a semiconductor wafer (31) is disclosed. The apparatus includes a polishing pad (21) and a polishing head (32). The polishing pad includes a surface for polishing the semiconductor wafer. The surface has a hole (20). The polishing head is cooperatively engaged with the polishing pad. The polishing head holds the semiconductor wafer and applies it against the polishing pad. Both the polishing head and the polishing pad are rotatable.

Abstract: A method and apparatus for monitoring polishing pad wear during processing is developed to extend the pad's useful life, and maintain pad uniformity. This is accomplished in the present invention by measuring and monitoring the diminished pad thickness using a non-intrusive measurement system, and creating a closed-loop system for adjusting the chemical-mechanical polishing tool process parameters. The non-intrusive measurement system consists of an interferometer measurement technique utilizing ultrasound or electromagnetic radiation transmitters and receivers aligned to cover any portion of the radial length of a polishing pad surface. The measurement system is sensitive to relative changes in pad thickness for uniformity, and to abrupt changes such as detecting wafer detachment from the CMP wafer carrier.

Abstract: An improvement in a polishing apparatus for planarizing substrates comprises a tenacious coating of a low-adhesion material to the platen surface. An expendable polishing pad is adhesively attached to the low-adhesion material, and may be removed for periodic replacement at much reduced expenditure of force. Polishing pads joined to low-adhesion materials such as polytetrafluoroethylene (PTFE) by conventional adhesives resist distortion during polishing but are readily removed for replacement.

Abstract: An apparatus and method for performing chemical-mechanical polishing is disclosed in which the pad is secured to the platen without the use of adhesives. A polishing pad and a platen are secured together by a releasable attractive force; the force may comprise a vacuum or electromagnetic force, and the pad has a hard or magnetic backside layer for facing the plating and responding to the attractive force. This invention has particular application to chemical-mechanical polishing for use in planarizing dielectrics.

Abstract: A pad refurbisher that provides in situ, real-time conditioning and/or cleaning of a polishing surface on a polishing pad used in chemical-mechanical polishing of a semiconductor wafer and other microelectronic substrates. The pad refurbisher has a body adapted for attachment to a wafer carrier of a chemical-mechanical polishing machine, and a refurbishing element connected to the body. The body has a distal face positioned proximate to a perimeter portion of the wafer carrier and facing generally toward the polishing surface of the polishing pad. The body travels with the wafer carrier as the wafer carrier moves over the polishing pad. The refurbishing element is connected to the distal face of the body so that the refurbishing element can operatively engage the polishing surface substantially adjacent to the perimeter of the wafer carrier.