Abstract: When a wafer is pressed on a rotating polishing pad and its surface is polished, a retainer retains the periphery of the wafer to prevent the wafer from being detached from the polishing pad. The retainer includes a first ring which surrounds the wafer and contacts the polishing pad and a second ring which is provided outside the first ring in the radial direction of the wafer and contacts the polishing pad. The second ring has wear resistance that is higher than that of the first ring.

Abstract: An apparatus and method of removing scale from the surfaces of processed sheet metal employs high pressure jets of water directed from nozzles positioned in close proximity to the sheet metal surfaces.

Abstract: A substrate delivery mechanism comprises a top ring, a substrate loader for loading a substrate, and a pusher mechanism, wherein the substrate loader comprises a top ring guide and the pusher mechanism comprises a top ring guide lifting table, in which the top ring guide and the top ring guide lifting table together form a sealed space below the substrate held by the top ring in a condition where the substrate loader is moved up by the pusher mechanism, wherein the substrate is detached from the top ring by exhausting the sealed space while at the same time injecting a fluid from through-holes provided in a substrate holding surface of the top ring.

Abstract: An integrated process tool for chemical mechanical processing, cleaning and drying a semiconductor workpiece is provided. The integrated process tool includes a CMP module and a cleaning and drying module. After being processed, the workpiece is transported from the CMP module to the cleaning and drying module using a movable housing. In the cleaning and drying module, a cleaning mechanism is used to clean the workpiece while the workpiece is rotated and held by a support stucture of the movable housing. A drying mechanism of the cleaning and drying module picks up the workpiece from the moveable housing and spin dries it. Throughout the CMP process, cleaning and drying, the processed surface of the wafer faces down.

Abstract: A slurry recycling apparatus having a first filter, a dirty side storage tank, slurry pump, second filter, clean side storage tank and slurry outlet, in which used slurry from an edge notch polishing apparatus is delivered to the first screen filter, transported to the dirty side slurry storage tank, pumped from the dirty side slurry storage tank through a second filter that filters out small particulate matter from the slurry and allows the slurry to pass to the clean side slurry storage tank, and finally to the edge notch polishing apparatus as needed. Slurry which is not immediately taken from the clean side slurry storage tank is continuously recycled through the second filter by overflowing from the clean side to the dirty side slurry storage tank where it is there pumped through the second filter back into the clean side slurry storage tank.

Abstract: A polishing pad conditioner for a chemical mechanical polishing apparatus and real-time monitoring method thereof. A conditioning head is supported for rotation at one end of a transverse beam. A drive assembly is coupled to the conditioning head to drive downward force to the conditioning head, and at least one sensor disposed on the transverse beam detects deflection of the transverse beam.

Abstract: A method for cleaning a surface of semiconductor wafer after chemical mechanical polishing in accordance with the present invention comprises the steps of: (1) providing a semiconductor wafer having a surface to be treated; (2) applying a photocatalyst containing solution to the surface, the solution having a plurality of photocatalyst particles; and (3) applying light to the surface, the light being adapted to activate the photocatalyst particles.

Abstract: The present invention relates to a method of forming an electrode of an apparatus for manufacturing a liquid crystal display (LCD) device, wherein the electrode has a substantially flat surface. A method of forming an electrode of an apparatus for manufacturing a liquid crystal display device includes milling an aluminum plate, wherein the milling comprises roughing, rest roughing and finishing, polishing an upper surface of the aluminum plate by using fine ceramic powder, and anodizing the aluminum plate.

Abstract: A wafer polishing method which can prevent polishing swarfs from entering the gap between the periphery of a wafer and a protective tape when the back surface of the wafer is dry polished with a polishing pad after the protective tape is affixed onto the front surface of the wafer, the method comprising the steps of cutting an arcuate chamfered portion formed at the periphery of the wafer to form a precipice at the periphery of the wafer; affixing the protective tape onto the surface to be held on the chuck table of a polishing machine, of the wafer; and placing the wafer on the chuck table in such a manner that the side of the protective tape comes into contact with the chuck table to dry polish the surface of the wafer with a polishing means.

Abstract: A post-CMP cleaning process includes brush cleaning a CMPed surface, followed by at least partially drying the CMPed surface, followed by spray cleaning the CMPed surface. A method of cleaning residue from registration alignment markings formed on a semiconductor substrate includes polishing a material within which the registration alignment markings are received with a polishing solution comprising a liquid and a solid, followed by brush cleaning a remaining outermost polished surface, followed by at least partially drying the polished surface, followed by spray cleaning the outermost polished surface. Other aspects and implementations are contemplated.

Abstract: A method for chemical mechanical polishing (CMP) includes a rinsing process performed to clean an orifice of a slurry supplier and other elements of a CMP device. The CMP device includes least one nozzle disposed in the periphery of a base. The function of the nozzle is to spray DI water to the orifice of the slurry supplier so as to prevent slurry residue and clogging.

Abstract: A cutting tool having a hard tip is pressed with a uniform pressure against a surface of a vehicle wheel as the wheel is rotated to smooth and seal the surface. The smoothed and sealed wheel surface is then chrome plated with a process that includes applying a nickel layer directly upon smoothed and sealed wheel surface and a chromium layer over the nickel layer.

Abstract: A ultra fine particle film forming apparatus is provided which is capable of forming a ultra fine particle film which has ultra fine particles sufficiently bonded together, sufficient density, flat surface and uniform density. A planarized ultra fine particle film forming method for forming a planarized ultra fine particle film from a deposited film of ultra fine particles formed by supplying the ultra fine particles to a substrate, the method comprising one or more of a planarizing step of planarizing a surface of the deposited film of the ultra fine particles supplied to the substrate.

Abstract: A solution for rinsing a surface that has been planarized using a chemical-mechanical planarization (“CMP”) technique. The solution may be a surfactant solution introduced following the use of a polishing solution in the CMP technique. The surfactant solution acts to clear undesirable particles from the planarized surface and also can terminate “latent” effects from the polishing solution. A cleaning solution is generally injected after the rinsing solution for additional cleaning effects. A plate covered with a textured material such a fabric is usually applied to the surface during the polishing, rinsing, or cleaning steps.

Abstract: The present invention provides a multi-step aqueous composition useful for polishing a tantalum barrier material and copper from a semiconductor wafer, comprising by weight percent 0.1 to 30 oxidizer, 0.01 to 3 inorganic salt or acid, 0.01 to 4 inhibitor, 0.1 to 30 abrasive, 0 to 15 complexing agent and balance water, wherein the aqueous composition has a pH between 1.5 to 6.

Abstract: A new technical advancement in the field of precision aluminum optics permits high quality optical polishing of aluminum monolith, which, in the field of optics, offers numerous benefits because of its machinability, lightweight, and low cost. This invention combines diamond turning and conventional polishing along with india ink, a newly adopted material, for the polishing to accomplish a significant improvement in surface precision of aluminum monolith for optical purposes. This invention guarantees the precise optical polishing of typical bare aluminum monolith to surface roughness of less than about 30 angstroms rms and preferably about 5 angstroms rms while maintaining a surface figure accuracy in terms of surface figure error of not more than one-fifteenth of wave peak-to-valley.

Abstract: A thin-film magnetic head is formed on a support and is provided with a reproducing head part, a recording head part, and a heater for generating heat upon energization. A medium-opposing surface S of the magnetic head is polished while energizing the heater or recording head part.

Abstract: The fabrication of integrated circuits entails the repeated application of many basic processing steps, for instance, planarization—the process of making a surface flat, or planar. One specific technique for making surfaces flat is chemical-mechanical planarization, which typically entails applying slurry onto a surface of an integrated circuit and polishing the surface with a rotating polishing head. The head includes several holes, known as slurry dispensers, through which slurry is applied to the surface. After completion of a polishing operation, gas is forced through the slurry dispensers to separate the surface from the rotating head. Unfortunately, the gas dries slurry remaining on the surface, causing slurry particles to stick to the polished surface, which ultimately cause defects in integrated circuits.

Abstract: A method of treating the surface of mechanically abraded glass includes a first step of providing a glass substrate having opposing first and second surfaces. The glass substrate having a recess in the first surface formed by abrasion, such as sand blasting. The glass substrate can also include a via therethrough, formed by said abrasion technique. A next step includes heating the glass substrate to its softening point. A next step includes holding the glass substrate at its softening point for a predetermined period of time to polish the recess and vias. This polishing returns transparency to the glass and reduces the possibility of crack propagation by reducing stress points and microcracks.

Abstract: A method of improving the yield and performance of IC devices fabricated on a semiconductor wafer is disclosed. The method includes fabricating via plugs in via openings provided in an intermetal dielectric (IMD) layer on a wafer, subjecting the wafer to CMP to isolate the via plugs, immersing and soaking the wafer in deionized (DI) water, and drying the wafer using isopropyl alcohol, typically in a Marangoni-type dryer. The Marangoni IPA drying step prevents the formation of static electricity on the wafer, and thus, prevents the adherence of small charged particles to the wafer. As a result, the yield of IC devices fabricated on the wafer, as well as the performance of the devices, is enhanced.

Abstract: A method of removing at least one particle from a substrate is disclosed comprising polishing a metallized layer over the substrate using a slurry to remove a portion of the metallized layer and polishing the substrate using the slurry to remove a portion of a barrier between the metallized layer and the substrate. The method further includes introducing deionized water onto the substrate and introducing a solution comprising a weak acid selected from the group consisting of acetic acid, citric acid, gluconic acid, glucuronic acid, oxalic acid, and tartaric acid.

Abstract: A wrench manufacturing process for manufacturing a rotational-tube wrench comprises the steps of forging, annealing, rolling, punching, drawing, polishing, surface grinding, CNC rough cutting, thermal treatment, vibrating, electroplating, CNC fine cutting and assembling. The additional steps of thermal treatment and CNC or MC fine cutting not only enhance the structural toughness of the wrench but also guarantee high degree of roundness for the receptacle space thereof. The CNC or MC fine cutting also provides the inner wall of the receptacle space with fine tool marks so that the confinement strength of a rotational tube without ratchets therein can be significantly enlarged.

Abstract: An ironing assembly for use in chemical mechanical planarization (CMP) is provided. The ironing assembly is designed for use over a linear polishing pad which has a plurality of asperities and applied slurry. The ironing assembly includes an ironing disk having a contact surface. The ironing disk is oriented over the linear polishing pad such that the contact surface of the ironing disk can be applied over the surface of the linear polishing pad to at least partially flatten the plurality of asperities before planarizing a semiconductor wafer surface over the linear polishing pad.

Abstract: Light is incident on a semiconductor wafer polish surface and an adjacent reference surface (80). The reflected light from each surface is detected by a detector (35) positioned beneath the surfaces. The signals derived from each source of reflected light is analyzed in a electronic system (37) and an endpoint for a chemical mechanical polish process is determined as a function of both signals.

Abstract: Techniques for recycling waste particles may include solidifying particles, which were generated by machining a crystal ingot into a wafer or by machining a semiconductor wafer, into a cake, and melting the cake, for example, into an ingot.

Abstract: A method is provided for creating a polish pad. This may involve determining a design layout of a wafer. The design layout may include a distribution of metal line features on the wafer. A polish pad design may be created/determined based on the determined layer. The polish pad may have asperities having a width greater than a width of metal line features of the wafer.

Abstract: The substrate processing system has a factory interface module, a chemical mechanical polisher, a cleaner, a particle monitor and a substrate transfer system disposed as an integrated system. The factory interface module may includes a chamber a storage station located in a chamber of the module to hold a plurality of substrates in a substantially horizontal position. The storage station may hold pad break-in wafers for pad preconditioning and/or monitor wafers for defects monitoring. The particle monitor may have a port coupled to the factory interface module.

Abstract: A method and apparatus for electrically biasing a substrate in an electrochemical processing system is generally provided. In one embodiment, an apparatus for electrochemical processing includes a polishing pad and a conductive element disposed therein. The polishing pad has an upper surface adapted to support a substrate thereon during processing. The conductive element disposed in the polishing pad is movable between a first position having at least a portion of the conductive element exposed above the upper surface and a second position below the upper surface, wherein the conductive element is magnetically biased towards the first position.

Abstract: A method of producing ceramics base plates is disclosed, comprising forming a continuous flaw on at least one surface of a ceramics sintered base plate from end to end using a flawing tool and dividing the ceramics sintered base plate along the flaw by applying an external force. It is preferred that a blade edge portion of the flawing tool is made of a cemented carbide or diamond. By the method of the invention, the ceramics sintered base plate can be easily divided, and ceramics base plates excellent in dimensional accuracy are obtained without lowering the strength thereof.

Abstract: Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain.

Abstract: A method for directional force correction of pneumatic tires that simultaneously corrects radial and tangential force exerted by the tire. The method allows for the correction of tangential force regardless of the rotational direction of the tire. This invention accomplishes this end through an improved force correction technique, wherein at least two rotary grinders are employed. In the inventive method, the rotational direction of one grinder is reversed in relation to the rotational direction of the other grinder(s). Therefore, at least one grinder will engage the tire in an “up-grinding” manner, and at least one grinder will engage the tire in a “down-grinding” manner. The result is that across the width of the tire's tread surface, some tread blocks will have a “heel-to-toe” appearance, while others will appear “toe-to-heel.” The effect is that, no matter what direction the tire is rotating while in use on an automobile, tangential force variation has been reduced.

Abstract: A tool for abrading a workpiece to smooth the surface thereof. The tool has a shank portion and a working portion. The working portion has a smooth and non-abrading surface, with one or more depressions formed therein. Each depression includes an abrading mechanism. The abrading mechanism does not protrude above the smooth surface of the working portion of the tool. During operation, once the workpiece has been smoothed by removal of the raised areas by the abrading mechanism, the smooth surface of the tool engages the workpiece and further abrasion of the workpiece is prevented.

Abstract: The invention relates to a process for producing a hard-material-coated component, comprising the following steps: application of a layer of hard material to the component in a PVD coating unit; and structural further processing of the outer surface of the layer of hard material, and to a component produced using the process. Particularly in the case of thick coatings or coatings with a columnar structure, such processes have a problem producing a sufficiently smooth surface on the coating. The problem is solved by the fact that for the structural further processing, the surface of the layer is blasted in a blasting device in order to improve this surface, an inorganic blasting agent with a grain size in the range from 1 ?m to 100 ?m and a sharp-edged grain shape being used.

Abstract: A finishing apparatus modifies the physical structure along the edge of a metal knife blade wherein the edge is formed at the junction of two edge facets presharpened with abrasives. The finishing apparatus consists of at least one precision angular knife guide that positions the edge of the blade into contact with the rigid surface of a driven moving member and positions the plane of the adjacent edge facet at a precise predetermined angle relative to the plane of the rigid surface that is harder than the metal of the knife and is without tendency to abrade.

Abstract: A gas turbine component blank is shaped by clamping the gas turbine component blank into a fixture that accurately positions the gas turbine component blank in three dimensions. The positioning is accomplished against stops accurately machined into a base of the fixture, by first supporting the gas turbine component blank on one set of stops that prevents movement in the direction perpendicular to a plane of the base, and then operating a movable clamp to force the gas turbine component blank against other sets of stops that limit the movement of the gas turbine component blank in directions lying in the base plane. The clamp has a compound movement that simultaneously forces the gas turbine component blank against stops that prevent movement in orthogonal directions lying in the base plane. The gas turbine component blank is thereafter shaped, preferably by grinding the sides of the root precursor of the gas turbine component blank.

Abstract: The present invention provides exemplary cluster tool systems and methods for processing wafers, such as semiconductor wafers. One method includes providing (710) a wafer having initial thickness variations between two wafer surfaces. The wafer is subjected to grinding (720), polishing (730) and cleaning (740) processes. The wafer is thereafter transferred (750) to a wafer processing chamber to undergo device formation processes (760-780). The wafer processing steps may be undertaken in a series of process modules of sufficiently small size to permit their use in a circuit device fabrication facility. The in-fab processing of wafers reduces the number of process steps, cost and time typically associated with wafer processing prior to device formation thereon.

Abstract: An integral machine for polishing, cleaning, rinsing and drying workpieces such as semiconductor wafers. A load/unload station has a plurality of platforms for receiving cassettes of wafers to be processed. A dry end-effector of a robot retrieves wafers from the cassettes and transfers them to an index table. A transfer apparatus having wafer carrier elements picks up wafers from the index table, moves the wafers to a polishing table for polishing, and returns the wafers to the index table for further processing. A flipper moves the polished wafers to a cleaning station. The cleaning station includes scrub stations, a rinsing station and a spin dryer station, and a connective system of water tracks. A wet end-effector of the robot transfers rinsed wafers to the spin dryer station. The dry end-effector of the robot moves dried wafers from the spin dryer station back to the cassette of origination.

Abstract: A p-type thermoelectric material is prepared by mixing and melting at least two members selected from bismuth, tellurium, selenium, antimony, and sulfur to obtain an alloy ingot; grinding the alloy ingot to obtain powder of the allow mass; and hot pressing the powder. At least the hot pressing is carried out in the presence of any one of hexane and solvents represented by CnH2n+1OH or CnH2n+2CO (where n is 1, 2 or 3). A dopant may be used at the step of mixing.

Abstract: A flat-object holder can hold a flat object-and-frame assembly, and the holder has the flat object fixed to the frame with protection tape. The flat-object holder includes at least a flat object supporting area for fixedly holding the flat object via the protection tape by applying a suction force, and a frame fixing area for fastening the frame. The flat-object holder bearing the flat object-and-frame assembly can be fixedly held by a selected chuck table by applying a negative pressure to the flat object supporting area. The flat-object holder can transfer and put the flat object-and-frame assembly in a container. Thus, no matter how thin the flat object may be, it can be handled without the fear of breaking.

Abstract: A method and apparatus of planarizing substrates is disclosed. A planarizing web medium is prepared for planarizing substrates to reduce defect generation. The planarizing web has a planarizing region and preparing region defined thereon, wherein at least one portion of the preparing region is outside the planarizing region. The web medium is advanced to move one portion of the web out of the planarizing region and another portion into the planarizing region.

Abstract: A ultra fine particle film forming apparatus is provided which is capable of forming a ultra fine particle film which has ultra fine particles sufficiently bonded together, sufficient density, flat surface and uniform density. A planarized ultra fine particle film forming method for forming a planarized ultra fine particle film from a deposited film of ultra fine particles formed by supplying the ultra fine particles to a substrate, the method comprising one or more of a planarizing step of planarizing a surface of the deposited film of the ultra fine particles supplied to the substrate.

Abstract: A slurry removal control mechanism for a CMP polisher is provided. After slurry dispense has been terminated, a high pressure fluid spray removes the slurry from the polishing pad, while the plated causes the pad to rotate at a high rpm rate, thus clearing the slurry from contact with the wafer. Additionally, there is provided a slurry dispense bar including high pressure spray nozzles for providing a high pressure spray upon slurry dispense termination.

Abstract: A thin-film magnetic head is formed on a support and is provided with a reproducing head part, a recording head part, and a heater for generating heat upon energization. A medium-opposing surface S of the magnetic head is polished while energizing the heater or recording head part.

Abstract: In one embodiment, the invention is directed toward inline lapping of magnetic tape. The lapping process is performed inline with one or more other magnetic tape manufacturing processes. In this manner, the number of times the magnetic tape is un-spooled and then re-spooled can be reduced. Consequently, the amount of handling of the individual tape pancakes can also be reduced, thus avoiding damage to the edge of the tape, or other damage associated with tape pancake handling.

Abstract: The present invention provides a method and apparatus for wet processing of a conductive layer using a degassed process solution such as a degassed electrochemical deposition solution, a degassed electrochemical polishing solution, a degassed electroless deposition solution, and a degassed cleaning solution. The technique includes degassing the process solution before delivering the degassed process solution to a processing unit or degassing the process solution in-situ, within the processing unit.

Abstract: In one embodiment, the invention is directed to techniques for controlling the abrasivity of magnetic tape without modifying the coating formulas used to create the magnetic tape. For example, the invention may involve controlling or adjusting the abrasivity of magnetic tape using one or more burnishing techniques such as lapping, vaming or scraping. In this manner, the abrasivity of magnetic tape can be controlled or adjusted to ensure that the tape meets the necessary tape specifications without modifying the coating formulas applied during the coating process.

Abstract: A platen is disclosed. The platen includes a support surface for supporting a portion of a linear polishing belt during a chemical mechanical polishing (CMP) operation. The platen also includes a plurality of fluid outlets oriented throughout the support surface. The orientation defines an asymmetric pattern where each of the plurality of fluid outlets is capable of outputting a controlled fluid toward an underside of the linear polishing belt.

Abstract: Layers of material deposited exhibit both a local and a global pattern. The local pattern is a function of the underlying wafer surface, but the global pattern is a function of the equipment in which the layer was deposited. Accurate reconstruction of the surface topology of a layer on a product wafer is achieved despite the local pattern by determining the surface topology of a blanket layer on a blank wafer, measuring the thickness of the layer at a few selected locations on a product wafer, calculating scaling coefficients representing deviations of the measured thickness from the blanket layer topology, and then multiplying the blanket layer topology by the scaling coefficients. The surface reconstruction results from modifying the surface topology of the blanket layer so that it has the same thickness at the measured locations as does the product wafer layer.

Abstract: A method of lathing a lens, especially a contact lens, involves attaching the cylindrical blank of lens material to a first block of machineable plastic material, lathe cutting a desired first lens surface in the cylindrical blank, attaching the machined first lens surface of the blank to a second block, lathe cutting to remove the block of machineable plastic material, and lathe cutting a desired second lens surface in the blank. Both the first and second blocks may be adhered to the lens blank with an adhesive curable by ultraviolet radiation, and a two-piece block, composed of a head section and a body section, is disclosed.

Abstract: Siding boards for clapboard boarding are used in a clapboard boarding structure in which lower side portions of upper siding boards are overlapped frontward of upper side portions of lower siding boards for installing a plurality of siding boards to a framework of a building. The siding boards are ceramic type siding boards with vertical joint grooves being formed on designed surfaces. Lower edges of the lower side portions of the siding boards are formed at different heights with the boundaries of the vertical joint grooves. Rear surface stepped portions that have been obtained by notching the rear surface are formed at the lower side portions. Upper end portions of the rear surface stepped portions are formed in a substantially straight line in lateral directions.