For Stripping Photoresist Material Patents (Class 510/176)
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Publication number: 20150094249Abstract: The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include hydrogen peroxide in an amount that is no greater than 15% by weight of the total weight of the solution. The solution can also include a quaternary ammonium hydroxide and water. Further, the solution can include an amine, a co-solvent, or both. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the solution.Type: ApplicationFiled: September 27, 2013Publication date: April 2, 2015Applicant: Dynaloy, LLCInventors: Richard Dalton Peters, Travis W. Acra, Yuanmei Cao, Nichelle Maria Gilbert, Michael Tod Phenis, Kimberly Dona Pollard, Joshua Cummins, Meng Guo, Donald James Pfettscher
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Patent number: 8987181Abstract: A photoresist and post etch cleaning solution for semiconductor wafers comprising: A. a polar aprotic solvent, B. an inorganic base; C. a co-solvent for said inorganic base; D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; E. an organic base comprising an amine compound; and F. a nonionic surfactant bearing at least one ether group. The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.Type: GrantFiled: October 15, 2012Date of Patent: March 24, 2015Assignee: Dynaloy, LLCInventors: Kimberly Dona Pollard, Donald Pfettscher, Meagan Hatfield, Spencer Erich Hochstetler, Nichelle M. Wheeler, Michael T. Phenis
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Patent number: 8980812Abstract: There are provided a processing liquid for suppressing pattern collapse of a microstructure which includes at least one compound selected from the group consisting of an imidazolium halide containing an alkyl group having 12, 14 or 16 carbon atoms, a pyridinium halide containing an alkyl group having 14 or 16 carbon atoms and an ammonium halide containing an alkyl group having 16 or 18 carbon atoms, and water; and a method for producing a microstructure formed of silicon oxide using the processing liquid.Type: GrantFiled: July 14, 2011Date of Patent: March 17, 2015Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Hiroshi Matsunaga, Masaru Ohto
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Patent number: 8981148Abstract: An esteramide compound of the following formula (I): R1OOC-A-CONR2R3??(I) is described, wherein: A is a covalent bond or a methylene group —CH2—; R1 is an optionally substituted, saturated or unsaturated aliphatic or cycloaliphatic hydrocarbon group including from 5 to 36 carbon atoms, R2 and R3, either identical or different, are groups selected from a hydrogen atom, and optionally substituted hydrocarbon groups, preferably including from 1 to 36 carbon atoms, and R2 and R3 not being simultaneously hydrogen atoms. Also described, are applications for using the esteramide compound, notably as a solvent.Type: GrantFiled: March 17, 2011Date of Patent: March 17, 2015Assignee: Rhodia OperationsInventors: Massimo Guglieri, Thierry Vidal
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Patent number: 8961744Abstract: In a system and method for recycling a high-boiling-point waste photoresist stripper generated in processes of manufacturing LCDs or semiconductor devices, an expensive high-boiling-point stripper solvent can be easily recycled at high yield and high-purity electronic grade.Type: GrantFiled: February 19, 2014Date of Patent: February 24, 2015Assignee: Korex CorporationInventors: Ho Kyung Lee, In Gyoo Lee, Myung Jun Park, Kee-Kahb Koo, Jae-Kyeong Kim
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Patent number: 8956462Abstract: The objects of the present invention are to provide a treatment liquid able to inhibit pattern collapse in a microstructure such as a semiconductor device or a micromachine, as well as a method of manufacturing a microstructure using the same. Means to solve the problems is to treat a microstructure with a treatment liquid for inhibiting pattern collapse in a metal microstructure comprising an alkylphosphonic acid or salt thereof in which said alkyl moiety contains 6 to 18 carbon atoms, water, and a water soluble solvent.Type: GrantFiled: March 13, 2013Date of Patent: February 17, 2015Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Hiroshi Matsunaga, Kimihiro Aoyama
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Patent number: 8957006Abstract: A chemical solution for use in cleaning a patterned substrate includes water, from approximate 0.01 to 99.98 percent by weight; hydrogen peroxide, from 0 to 30 percent by weight; a pH buffering agent, from approximate 0.01 to 50 percent by weight; a metal chelating agent, from approximate 0 to 10 percent by weight; and a compound for lowering a surface tension of the combination of water, hydrogen peroxide, pH buffering agent, and metal chelating agent. Examples of the compound include an organic solvent, from approximate 0 to 95 percent by weight, or a non-ionic surfactant agent, from approximate 0 to 2 percent by weight.Type: GrantFiled: March 11, 2013Date of Patent: February 17, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Yuan Ting, Jeng-Shiou Chen
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Publication number: 20150044839Abstract: A photoresist stripping and cleaning composition free from N-alkylpyrrolidones and added quaternary ammonium hydroxides comprising a component (A) which comprises the polar organic solvents N-methylimidazole, dimethylsulfoxide and 1-aminopropane-2-ol.Type: ApplicationFiled: March 18, 2013Publication date: February 12, 2015Applicant: BASF SEInventors: Simon Braun, Christian Bittner, Andreas Klipp
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Patent number: 8951950Abstract: Al post-etch residue removal composition doped with an alkanoic acid of the formula R—COOH, where R can be a linear or branched alkyl group in the form of CnH2n+1, where n is from 4 to 19, simultaneously passivates exposed Al surfaces while removing post-etch residues.Type: GrantFiled: March 11, 2013Date of Patent: February 10, 2015Inventor: Chia-Yin Joyce Wei
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Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition
Patent number: 8951948Abstract: A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.Type: GrantFiled: June 7, 2006Date of Patent: February 10, 2015Assignee: Advanced Technology Materials, Inc.Inventors: Melissa K. Rath, David D. Bernhard, Thomas H. Baum, David W. Minsek -
Patent number: 8951949Abstract: A composition for stripping a color filter and a color filter regeneration method are provided. A composition for stripping the color filter according to an exemplary embodiment of the present invention includes glycol and potassium hydroxide (KOH), in which either (a) the concentration of the glycol is in the range of 83 wt % to 91 wt % and of the concentration of the potassium hydroxide satisfies the condition: (wt % of KOH)?6?(0.065*(wt % of the glycol)), or (b) the concentration of glycol is more than 91 wt % and the concentration of potassium hydroxide (KOH) is more than 0.2 wt %.Type: GrantFiled: December 14, 2012Date of Patent: February 10, 2015Assignee: Samsung Display Co., Ltd.Inventors: Kwang-Ho Lee, Jang-Sub Kim
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Patent number: 8940104Abstract: A cleaning composition for removing temporary wafer bonding material is provided. The cleaning composition comprises an alkylarylsulfonic acid and an aliphatic alcohol dispersed or dissolved in a hydrocarbon solvent system. Methods of separating bonded substrates and cleaning debonded substrates using the cleaning composition are also provided. The invention is particularly useful for temporary bonding materials and adhesives. The methods generally comprise contacting the bonding material with the cleaning solution for time periods sufficient to dissolve the desired amount of bonding material for separation and/or cleaning of the substrates.Type: GrantFiled: August 2, 2011Date of Patent: January 27, 2015Assignee: Brewer Science Inc.Inventors: Xing-Fu Zhong, John Moore
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Patent number: 8926758Abstract: A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent.Type: GrantFiled: February 27, 2013Date of Patent: January 6, 2015Assignee: Intermolecular, Inc.Inventors: Indranil De, Anh Duong
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Patent number: 8927476Abstract: Aqueous alkaline composition free from organic solvents and metal ion-free silicates, the said compositions comprising (A) a thioamino acid having at least one primary amino group and at least one mercapto group, (B) a quaternary ammonium hydroxide, (C) a chelating and/or corrosion inhibiting agent selected from the group consisting of aliphatic and cycloaliphatic amines having at least two primary amino groups, and aliphatic and cycloaliphatic amines having at least one hydroxy group, (D) a nonionic surfactant selected from the group of acetylenic alcohols, alkyloxylated acetylenic alcohols and alkyloxylated sorbitan monocarboxylic acid mono esters; the use of the alkaline composition for the processing of substrates useful for fabricating electrical and optical devices; and a method for processing substrates useful for fabricating electrical and optical devices making use of the said aqueous alkaline composition.Type: GrantFiled: July 12, 2011Date of Patent: January 6, 2015Assignee: BASF SEInventors: Raimund Mellies, Andreas Klipp
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Patent number: 8921296Abstract: Methods and systems for cleaning corrosion product of a metallic capping layer from the surface of a substrate are provided. According to one embodiment, a treatment solution includes a surfactant, a complexing agent, and a pH adjuster. The surfactant is configured to enhance wetting of the substrate surface, and inhibit further corrosion of the capping layer. The complexing agent is configured to bind to metal ions which have desorbed from the substrate surface. The pH adjuster is configured to adjust the pH to a desired level, so as to promote desorption of the corrosion product from the substrate surface.Type: GrantFiled: December 10, 2010Date of Patent: December 30, 2014Assignee: Lam Research CorporationInventor: Artur Kolics
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Patent number: 8916338Abstract: Processes associated apparatus and compositions useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices.Type: GrantFiled: November 19, 2013Date of Patent: December 23, 2014Assignee: Eastman Chemical CompanyInventors: Michael Wayne Quillen, Dale Edward O'Dell, Zachary Philip Lee, John Cleaon Moore, Edward Enns McEntire, Spencer Erich Hochstetler, Richard Dalton Peters, Rodney Scott Armentrout, Darryl W. Muck
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Patent number: 8912134Abstract: A method of cleaning copper material surfaces in ultra large scale integrated circuits after polishing, the method including: a) mixing and stirring between 1 and 4 wt. % of a surfactant, between 0.5 and 3 wt. % of a chelating agent, between 0.1 and 5 wt. % of a corrosion inhibitor, and deionized water, to yield a water soluble cleaning solution with pH value of between 7.4 and 8.2; and b) washing the copper material surfaces using the cleaning solution after alkaline chemical-mechanical polishing under following conditions: between 2000 and 3000 Pa of pressure; between 1000 and 5000 mL/min of flow rate; and at least between 0.5 and 2 min of washing time.Type: GrantFiled: January 10, 2013Date of Patent: December 16, 2014Assignee: Hebei University of TechnologyInventors: Yuling Liu, Xiaoyan Liu, Na Liu, Yangang He
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Patent number: 8906838Abstract: Cleaning compositions suitable for cleaning microelectronic structures having silicon dioxide, low-k or high-k di-electrics and copper or aluminum metallizations contain a polar organic solvent selected from amides, sulfones, sulfolenes, selenones and saturated alcohols and a strong alkaline base.Type: GrantFiled: May 27, 2003Date of Patent: December 9, 2014Assignee: Avantor Performance Materials, Inc.Inventor: Chien-Pin Sherman Hsu
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Patent number: 8900371Abstract: The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film.Type: GrantFiled: September 14, 2011Date of Patent: December 2, 2014Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Hironori Mizuta, Masahiko Kakizawa, Ichiro Hayashida
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Patent number: 8889609Abstract: A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa<9.0, a water-miscible solvent, and a mixture thereof. Employment of such composition exhibits efficient cleaning capability for Al substrates, minimal silicon etch while protecting aluminum for substrates comprising both materials.Type: GrantFiled: March 7, 2012Date of Patent: November 18, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Aiping Wu, Yi-Chia Lee, Wen Dar Liu, Machukar Bhaskara Rao, Gautam Banerjee
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Patent number: 8883699Abstract: Disclosed herein is a resist stripping composition, which has an excellent ability of stripping a residual resist remaining after dry or wet etching at the tune of forming patterns in a process of manufacturing a flat panel display substrate.Type: GrantFiled: October 24, 2012Date of Patent: November 11, 2014Assignee: Dongwoo Fine-Chem Co., Ltd.Inventors: Jeong-Hyun Kim, Kyung-Jun Ko, Sung-Sik Kim, Yu-Jin Lee
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Publication number: 20140326633Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?.Type: ApplicationFiled: July 15, 2014Publication date: November 6, 2014Inventors: Emanuel I. COOPER, Eileen Sparks, William R. Bowers, Mark A. Biscotto, Kevin P. Yanders, Michael B. Korzenski, Prema Sonthalia, Nicole E. Thomas
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Publication number: 20140318584Abstract: Compositions and methods for removing lanthanoid-containing solids and/or species from the surface of a microelectronic device or microelectronic device fabrication hardware. Preferably, the lanthanoid-containing solids and/or species comprise cerium. The composition is preferably substantially devoid of fluoride ions.Type: ApplicationFiled: January 12, 2012Publication date: October 30, 2014Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Emanuel I. Cooper, Jeffrey A. Barnes
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Patent number: 8859477Abstract: A composition comprising a phosphonitrile halide and an oligomeric organopolysiloxanes having from 10 to 50 Si units is effective to remove silicone residues from substrates with minimal swelling of thin polymer substrates.Type: GrantFiled: June 4, 2012Date of Patent: October 14, 2014Assignee: Wacker Chemie AGInventor: Andreas Koellnberger
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Patent number: 8853081Abstract: Provided are methods for processing semiconductor substrates to remove high-dose ion implanted (HDI) photoresist structures without damaging other structures made of titanium nitride, tantalum nitride, hafnium oxide, and/or hafnium silicon oxide. The removal is performed using a mixture of an organic solvent, an oxidant, a metal-based catalyst, and one of a base or an acid. Some examples of suitable organic solvents include dimethyl sulfoxide, n-ethyl pyrrolidone, monomethyl ether, and ethyl lactate. Transition metals in their zero-oxidation state, such as metallic iron or metallic chromium, may be used as catalysts in this mixture. In some embodiments, a mixture includes ethyl lactate, of tetra-methyl ammonium hydroxide, and less than 1% by weight of the metal-based catalyst. The etching rate of the HDI photoresist may be at least about 100 Angstroms per minute, while other structures may remain substantially intact.Type: GrantFiled: December 27, 2012Date of Patent: October 7, 2014Assignee: Intermolecular, Inc.Inventors: Anh Duong, Olov Karlsson, Sven Metzger
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Publication number: 20140256155Abstract: A chemical solution for use in cleaning a patterned substrate includes water, from approximate 0.01 to 99.98 percent by weight; hydrogen peroxide, from 0 to 30 percent by weight; a pH buffering agent, from approximate 0.01 to 50 percent by weight; a metal chelating agent, from approximate 0 to 10 percent by weight; and a compound for lowering a surface tension of the combination of water, hydrogen peroxide, pH buffering agent, and metal chelating agent. Examples of the compound include an organic solvent, from approximate 0 to 95 percent by weight, or a non-ionic surfactant agent, from approximate 0 to 2 percent by weight.Type: ApplicationFiled: March 11, 2013Publication date: September 11, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Taiwan Semiconductor Manufacturing Company, Ltd.
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Patent number: 8828918Abstract: An object of the present invention is to provide a semiconductor surface treating agent composition, which can realize easy removing of an anti-reflection coating layer in a production process of a semiconductor device or the like at a low temperature in a short time, a method for treating a semiconductor surface using the same, and further a semiconductor surface treating agent composition, which can realize not only removing of both layer of an anti-reflection coating layer and a resist layer, but can realize even removing of a cured resist layer produced in an etching process, and a method for treating a semiconductor surface using the same. The semiconductor surface treating agent composition of the present invention is characterized by comprising a compound which generates a fluorine ion in water, a carbon radical generating agent, and water and optionally an organic solvent, and the method for treating a semiconductor surface of the present invention is characterized by using the composition.Type: GrantFiled: March 6, 2009Date of Patent: September 9, 2014Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Hironori Mizuta, Osamu Matsuda
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Publication number: 20140249065Abstract: Semi-aqueous, alkaline microelectronic cleaning composition of pH?8 containing: (A) at least one secondary alkanolamine that generates hydroxides when in contact with water; (B) at least one organic alcohol ether solvent having an evaporation rate of 0.3 or less when n-butyl acetate's evaporation rate is taken as the baseline rate of 1.0; (C) at least one corrosion inhibiting cyclic amide compound; (D) at least one pH balancing azole metal corrosion inhibitor in an amount of 0.08% or less by weight of the composition; and (E) water; and optionally (F) at least one polyhydroxylated phenol compound corrosion inhibitor; and (G) at least one polyalcohol or polythiol surface modification agent containing vicinal hydroxyl or vicinal sulfhydryl groups to pair with the polyhydroxylated phenol compound corrosion inhibitor.Type: ApplicationFiled: October 5, 2012Publication date: September 4, 2014Inventor: Chien-Pin Sherman Hsu
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Patent number: 8822396Abstract: A residue-removing solution for removing residues present on semiconductor substrates after dry etching and/or ashing, the residue-removing solution comprising a Cu surface protective agent including: at least one compound selected from compounds (1), (2) and (3) each having as a basic skeleton a five-membered or six-membered heteratomic structure as defined herein; a compound capable of forming a complex or chelate with Cu (copper); and water. Further, the residue-removing solution has a pH of 4 to 9.Type: GrantFiled: August 21, 2008Date of Patent: September 2, 2014Assignee: Daikin Industries, Ltd.Inventors: Shingo Nakamura, Takehiko Kezuka
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Patent number: 8809247Abstract: A cleaning composition which is capable of removing both organic soiling and particulate soiling adhered to a substrate for an electronic device with a high degree of cleanliness, and which also has minimal impact on the environment, as well as a method of cleaning a substrate for an electronic device. The present invention relates to a cleaning composition used for cleaning a substrate for an electronic device including a water-soluble salt (A) containing a transition metal, a chelating agent (B) and a peroxide (C), wherein the amount of the chelating agent (B) is not less than 0.5 molar equivalents relative to the amount of the water-soluble salt (A) containing a transition metal.Type: GrantFiled: February 13, 2009Date of Patent: August 19, 2014Assignee: LION CorporationInventors: Makoto Hidaka, Taku Ogura
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Patent number: 8802608Abstract: A composition for cleaning and corrosion inhibition which is used in a step of manufacturing a semiconductor device or a display device having a copper-containing metallic wiring is provided, wherein the corrosion inhibitor component is any one of pyrazole, a pyrazole derivative such as 3,5-dimethylpyrazole, a triazole derivative such as 1,2,4-triazole, an aminocarboxylic acid such as iminodiacetic acid or ethylenediaminedipropionic acid hydrochloride, or a disulfide compound such as diisopropyl disulfide or diethyl disulfide; and the cleaning agent component is any one of ammonium fluoride, tetramethylammonium fluoride, ammonium acetate, acetic acid, glyoxylic acid, oxalic acid, ascorbic acid, 1,2-diaminopropane or dimethylacetamide. Also, a method for manufacturing a semiconductor device or the like using the composition for cleaning and corrosion inhibition is provided.Type: GrantFiled: July 3, 2008Date of Patent: August 12, 2014Assignee: Mitsubishi Gas Chemical Comany, Inc.Inventors: Kenji Shimada, Hiroshi Matsunaga, Kojiro Abe, Kenji Yamada
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Patent number: 8802609Abstract: Semiconductor processing compositions comprising amidoxime compounds having two or more amidoxime functional groups and their use in semiconductor processing to remove photoresist, polymeric materials, etching residues and copper oxides from semiconductor substrates, particularly substrates comprising copper, low-k dielectric material, titanium nitride, and/or titanium oxynitride.Type: GrantFiled: January 19, 2012Date of Patent: August 12, 2014Inventors: Wai Mun Lee, Hua Cui, Mark A. Scialdone, Albert G. Anderson
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Publication number: 20140213498Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.Type: ApplicationFiled: March 25, 2014Publication date: July 31, 2014Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: David W. Minsek, Melissa K. Rath, David D. Bernhard, Thomas H. Baum
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Patent number: 8772214Abstract: A composition and method for removing residues such as, without limitation, post etched and/or post ashed photoresist, plasma etching, ashing, and mixtures thereof from a substrate is described herein. In one aspect, there is provided a method for removing residues from a substrate comprising: contacting the substrate with a composition comprising: water; a quaternary ammonium hydroxide compound; a fluoride containing compound; and optionally a corrosion inhibitor wherein the composition is free of an added organic solvent and wherein the composition has a pH greater than 9.Type: GrantFiled: October 14, 2005Date of Patent: July 8, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Aiping Wu, Roberto John Rovito
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Publication number: 20140187460Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate.Type: ApplicationFiled: January 3, 2013Publication date: July 3, 2014Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Ali Afzali-Ardakani, Emanuel Israel Cooper, Mahmoud Khojasteh, Ronald W. Nunes, George Gabriel Totir
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Patent number: 8765654Abstract: An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.Type: GrantFiled: April 11, 2011Date of Patent: July 1, 2014Assignee: Advanced Technology Materials, Inc.Inventors: David W. Minsek, Michael B. Korzenski, Martha M. Rajaratnam
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Publication number: 20140179583Abstract: The invention discloses a peeling liquid for a resist, which relates to an optical element and is used for removing the color resist and the protective layer on a color filter rapidly and efficiently. The peeling liquid for a color resist on a color filter comprises an alkali metal alkoxide with a mass percentage of 10-45%, an organic amine with a mass percentage of 10-30%, a surfactant with a mass percentage of 5-30%, a solvent with a mass percentage of 20-60%, and an alcohol with a mass percentage of 1-55% in terms of the peeling liquid for a resist with a mass percentage of 100%. The peeling liquid for a resist in invention is used for removing the color resist and the protective layer of the substandard product in a color filter.Type: ApplicationFiled: December 2, 2013Publication date: June 26, 2014Applicant: Boe Technology Group Co., Ltd.Inventors: Shi SHU, Lu LIU, Can Wang, Yonglian QI, Guanbao HUI
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Patent number: 8759268Abstract: The present invention provides a residue-removing solution for use after a dry process, the residue-removing solution being capable of preventing minute cracks on a Cu surface, which has heretofore been unresolved with known polymer-removing solutions; and a method for manufacturing semiconductor devices using the residue-removing solution. More specifically, the invention relates to a residue-removing solution for removing residues present on semiconductor substrates after dry etching and/or ashing, the solution containing water and at least one component selected from the group consisting of (a) a keto acid, (b) a keto acid salt, and (c) an aldehyde acid salt; and a method for removing residues using the residue-removing solution.Type: GrantFiled: August 23, 2007Date of Patent: June 24, 2014Assignee: Daikin Industries, Ltd.Inventor: Shingo Nakamura
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Patent number: 8754021Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-containing compounds, e.g., quaternary ammonium bases. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: GrantFiled: February 19, 2010Date of Patent: June 17, 2014Assignee: Advanced Technology Materials, Inc.Inventors: Jeffrey A. Barnes, Jun Liu, Peng Zhang
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Patent number: 8747564Abstract: A residue-removing solution for removing residues after a dry process, which includes an amine salt of a monocarboxylic acid and/or a salt of a polycarboxylic acid that forms a 7- or more-membered ring chelate with copper, and water, the residue-removing solution containing aqueous solution (A) or (B) as described herein. Also disclosed is a method for removing residues present on a semiconductor substrate after dry etching and/or ashing. Further, a method for manufacturing semiconductor devices is further disclosed, which includes subjecting a semiconductor substrate having Cu as an interconnect material, and a low dielectric constant film as an interlayer dielectric material, to dry etching and/or ashing; and bringing the processed semiconductor substrate into contact with the above residue-removing solution.Type: GrantFiled: August 4, 2009Date of Patent: June 10, 2014Assignee: Daikin Industries, Ltd.Inventor: Shingo Nakamura
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Publication number: 20140155310Abstract: The disclosure is directed solutions and processes to remove substances from substrates. The substances can include photoresist. The solutions can include dimethylsulfoxide, a quaternary ammonium hydroxide, an alkanolamine, and less than 3% by weight water of a total weight of the solution. The quaternary ammonium hydroxide can include tetramethylammonium hydroxide, dimethyldipropylammonium hydroxide, or methyltriethylammonium hydroxide. Additionally, the solutions can include a secondary solvent. For example, the secondary solvent can include an alcohol. In another example, the secondary solvent can include ethylene glycol. Methods for the preparation and use of the solution to remove substances from substrates are also described.Type: ApplicationFiled: February 6, 2014Publication date: June 5, 2014Applicant: Dynaloy, LLCInventors: Michael Tod Phenis, Lauri Johnson, Raymond Chan, Diane Marie Scheele, Kimberly Dona Pollard
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Publication number: 20140147395Abstract: This disclosure is directed to compound of formula (1): wherein R1 is a C7-18 alkyl, R2 is hydrogen or a C1-3 alkyl, each R3, R4, R5, R6, and R7 is independently hydrogen or a C1-6 alkyl, a is 2-3, and b is 0-1, its method of preparation and uses thereof in water-borne coating compositions, cleaning compositions, fragrance, and personal care compositions.Type: ApplicationFiled: November 27, 2013Publication date: May 29, 2014Applicant: SEGETIS, INC.Inventors: Lee R. Rieth, Dorie J. Yontz
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Publication number: 20140142017Abstract: Compositions are described that are useful for removing organic and organometallic substances from substrates, for example, photoresist wafers. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic or organometallic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and specifically negative dry film photoresist from electronic devices.Type: ApplicationFiled: March 15, 2013Publication date: May 22, 2014Applicant: DYNALOY, LLCInventors: Richard Dalton Peters, Travis Acra, Yuanmei Cao, Spencer Erich Hochstetler, Michael Tod Phenis, Kimberly Dona Pollard
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Patent number: 8729002Abstract: Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses of a film or other structure at undesirably high rates are also disclosed.Type: GrantFiled: March 6, 2012Date of Patent: May 20, 2014Assignee: Micron Technology, Inc.Inventors: Nishant Sinha, J. Neil Greeley
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Publication number: 20140135246Abstract: A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition.Type: ApplicationFiled: January 17, 2014Publication date: May 15, 2014Applicant: FUJIFILM CorporationInventors: Atsushi MIZUTANI, Hideo FUSHIMI, Tomonori TAKAHASHI, Kazutaka TAKAHASHI
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Patent number: 8716210Abstract: Material for cleaning using a tri-state body are disclosed. A substrate having a particle deposited thereon is provided. A tri-state body that has a solid portion, liquid portion, and a gas portion is generated. A force is applied over the tri-state body to promulgate an interaction between the solid portion and the particle. The tri-state body is removed along with the particle from the surface of the substrate. The interaction between the solid portion and the particle causes the particle to be removed along with the tri-state body.Type: GrantFiled: November 17, 2010Date of Patent: May 6, 2014Assignee: Lam Research CorporationInventors: Erik M. Freer, John M. de Larios, Katrina Mikhaylichenko, Michael Ravkin, Mikhail Korolik, Fred C. Redeker
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Publication number: 20140109931Abstract: A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a water-miscible organic solvent, an amine compound, an organic acid, and a fluoride ion source. The compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.Type: ApplicationFiled: August 27, 2013Publication date: April 24, 2014Applicant: AIR PRODUCTS AND CHEMICALS INC.Inventors: Yi Chia Lee, Madhukar Bhaskara Rao, Gautam Banerjee, Wen Dar Liu, Aiping Wu, Seiji Inaoka
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Patent number: 8697345Abstract: A photoresist stripping solution comprising (a) a specified quaternary ammonium hydroxide, such as tetrabutylammonium hydroxide, tetrapropylammonium hydroxide, methyltributylammonium hydroxide or methyltripropylammonium hydroxide, (b) a water-soluble amine, (c) water, (d) a corrosion inhibitor and (e) a water-soluble organic solvent, the compounding ratio of component (a) to component (b) being in the range of from 1:3 to 1:10 by mass, as well as a method of stripping photoresists using the solution. The stripping solution of the invention assures effective protection of Al, Cu and other wiring metal conductors against corroding as well as efficient stripping of the photoresist film, post-ashing residues such as modified photoresist film and metal depositions. It also assures efficient stripping of Si-based residues and effective protection of the substrate (particularly the reverse side of a Si substrate) from corroding.Type: GrantFiled: April 1, 2010Date of Patent: April 15, 2014Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazumasa Wakiya, Shigeru Yokoi
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Publication number: 20140100151Abstract: Stripping and cleaning compositions suitable for the removal of film resists include about 2-55% by weight of at least one alkanolamine or at least one morpholine or mixtures thereof; about 20-94% by weight of at least one organic solvent; and about 0.5-60% by weight water based on the total weight of the composition.Type: ApplicationFiled: October 1, 2013Publication date: April 10, 2014Applicant: AIR PRODUCTS AND CHEMICALS INC.Inventors: Matthew I. Egbe, Aiping Wu, Madhukar Bhaskara Rao
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Patent number: 8685910Abstract: It is disclosed a cleaning liquid for stripping and dissolving a photoresist pattern having a film thickness of 10-150 ?m, which contains (a) 0.5-15 mass % of a quaternary ammonium hydroxide, such as tetrapropylammonium hydroxide and tetrabutylammonium hydroxide, (b) 65-97 mass % of a water-soluble organic solvent, such as dimethylsulfoxide or a mixed solvent thereof with N-methyl-2-pyrrolidone, sulforane, etc., and (c) 0.5-30 mass % of water, and a method for treating a substrate therewith.Type: GrantFiled: July 28, 2010Date of Patent: April 1, 2014Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Shigeru Yokoi, Kazumasa Wakiya, Koji Saito