For Stripping Photoresist Material Patents (Class 510/176)
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Patent number: 8685909Abstract: An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.Type: GrantFiled: March 23, 2009Date of Patent: April 1, 2014Assignee: Advanced Technology Materials, Inc.Inventors: David Angst, Peng Zhang, Jeffrey Barnes, Prerna Sonthalia, Emanuel Cooper, Karl Boggs
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Publication number: 20140083458Abstract: Provided is a stripping solution recycling system using a photoresist stripping solution that strips a photoresist without damaging a Cu film or reducing the adhesiveness to a layer deposited on the Cu film, when a Cu film or Cu alloy film on a large-area substrate is wet-etched to make wiring or the like. The stripping solution recycling system has a resist stripping device for repeatedly using a stripping solution; a distillation and regeneration device for distilling the stripping solution in the waste tank; a component analyzer for investigating the composition ratio of the main agent and the polar solvent in the separated liquid; a preparation device for preparing the mixed solution; and a supply tank for storing the mixed solution.Type: ApplicationFiled: October 6, 2011Publication date: March 27, 2014Applicant: PANASONIC CORPORATIONInventors: Shinichirou Fuchigami, Norio Yamaguchi, Masahiko Aikou, Koji Shimizu, Hiroyoshi Takezawa
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Publication number: 20140087313Abstract: A stripping solution for photolithography which can effectively strip away residual materials of a photoresist pattern and etching residual materials, and has excellent anticorrosion properties on SiO2 and a variety of metal materials; and a method for forming a pattern using the stripping solution. A prescribed basic compound is used as a counter amine of the hydrofluoric acid contained in the stripping solution for photolithography, and the stripping solution for photolithography is adjusted to a pH measured at 23° C. of not more than 6.0 or 8.5 or more.Type: ApplicationFiled: September 13, 2013Publication date: March 27, 2014Applicant: Tokyo Ohka Kogyo Co., Ltd.Inventors: Naohisa Ueno, Daijiro Mori, Takayuki Haraguchi
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Patent number: 8679734Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.Type: GrantFiled: August 7, 2012Date of Patent: March 25, 2014Assignee: Advanced Technology Materials, Inc.Inventors: David W. Minsek, Melissa K. Rath, David D. Bernhard, Thomas H. Baum
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Patent number: 8668777Abstract: Mixtures containing concentrated sulfuric acid used for stripping photoresist from semiconductor wafer, such as SOM and SPM mixtures, are more quickly removed from a wafer surface using another liquid also containing high concentration of sulfuric acid, with the second liquid furthermore containing controlled small amounts of fluoride ion. The second liquid renders the wafer surface hydrophobic, which permits easy removal of the sulfuric acid therefrom by spinning and/or rinsing.Type: GrantFiled: December 22, 2010Date of Patent: March 11, 2014Assignee: Lam Research AGInventors: Harald Okorn-Schmidt, Dieter Frank, Franz Kumnig
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Patent number: 8669217Abstract: A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition.Type: GrantFiled: March 17, 2011Date of Patent: March 11, 2014Assignee: FUJIFILM CorporationInventors: Atsushi Mizutani, Hideo Fushimi, Tomonori Takahashi, Kazutaka Takahashi
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Publication number: 20140057437Abstract: To provide a rinsing agent for lithography, which contains C6-C8 straight-chain alkanediol, and water.Type: ApplicationFiled: June 27, 2013Publication date: February 27, 2014Inventors: Miwa KOZAWA, Junichi KON, Koji NOZAKI
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Patent number: 8658583Abstract: An improved method for making a photoresist stripping solution for a metal-containing semi-conductor substrate where the stripping solution comprises a blend of at least one organic sulfonic acid with a halogen-free hydrocarbon solvent wherein concentrations of trace amounts of residual sulfuric acid and sulfur trioxide in the blend are reduced to very low levels.Type: GrantFiled: September 22, 2009Date of Patent: February 25, 2014Assignee: EKC Technology, Inc.Inventor: Wai Mun Lee
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Publication number: 20140045335Abstract: A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and the non-amine cyclic group includes a ring having a carbon number of 5 to 8.Type: ApplicationFiled: August 8, 2013Publication date: February 13, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Chawon KOH, Su Min KIM, Hyunwoo KIM, Hyojin YUN
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Patent number: 8642526Abstract: A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.Type: GrantFiled: May 9, 2011Date of Patent: February 4, 2014Assignee: Advanced Technology Materials, Inc.Inventors: Pamela M. Visintin, Ping Jiang, Michael B. Korzenski, Mackenzie King
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Publication number: 20140017902Abstract: A nonaqueous cleaning liquid comprising a fluoroalkanol, a quaternary ammonium hydroxide, and an organic solvent. Compounds represented by formulae (1) and (2). Fluoroalkanol compounds include (1) H(CF2)aCH2—OH and (2) F(CF2)b(CH2)c—OH In which a and b are each an integer of from 2 to 6, and c is an integer of 1 or 2.Type: ApplicationFiled: July 11, 2013Publication date: January 16, 2014Inventors: Daijiro Mori, Takayuki Haraguchi
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Patent number: 8618036Abstract: An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.Type: GrantFiled: November 14, 2011Date of Patent: December 31, 2013Assignees: International Business Machines Corporation, Advanced Technology Materials, Inc.Inventors: Ali Afzali-Ardakani, John A. Fitzsimmons, Nicholas C. M. Fuller, Mahmoud Khojasteh, Jennifer V. Muncy, George G. Totir, Karl E. Boggs, Emanuel I. Cooper, Michael W. Owens, James L. Simpson
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Publication number: 20130345106Abstract: The present invention relates to a photoresist stripping composition for all process of manufacturing LCD, more specifically to a water-borne united photoresist stripping composition, as a weak basic composite comprising a tertiary alkanolamine, water, and an organic solvent. The composition according to the present invention prevents a corrosion of Al and Cu metal wiring in process of manufacturing LCD, has a good capability of removing photoresist, and is applied to all Al process, Cu process, an organic film process, and COA process.Type: ApplicationFiled: August 19, 2010Publication date: December 26, 2013Applicant: LTC CO., LTD.Inventor: Ho Sung Choi
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Patent number: 8614053Abstract: Processes associated apparatus and compositions useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices.Type: GrantFiled: September 27, 2010Date of Patent: December 24, 2013Assignee: Eastman Chemical CompanyInventors: Michael Wayne Quillen, Dale Edward O'Dell, Zachary Philip Lee, John Cleaon Moore, Edward Enns McEntire, Spencer Erich Hochstetler, Rodney Scott Armentrout, Richard Dalton Peters, Darryl W. Muck
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Publication number: 20130334679Abstract: Resist stripping agents useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits and/or liquid crystals with reduced metal and metal alloy etch rates (particularly copper etch rates and TiW etch rates), are provided with methods for their use. The preferred stripping agents contain low concentrations of resorcinol or a resorcinol derivative, with or without an added copper salt, and with or without an added amine to improve solubility of the copper salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.Type: ApplicationFiled: August 15, 2013Publication date: December 19, 2013Applicant: Dynaloy, LLCInventors: John Atkinson, Kimberly Dona Pollard, Gene Goebel
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Publication number: 20130330927Abstract: A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.Type: ApplicationFiled: June 10, 2013Publication date: December 12, 2013Inventors: Tomoya Kumagai, Takahiro Eto
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Publication number: 20130319465Abstract: A method and system for rapidly mixing process chemicals are provided. The method includes injecting a second process chemical into a first process chemical at or near the center of the flow stream, in a flow direction that is the same or different from the flow of the first process chemical, to produce uniform mixing within a target mixing distance and target mixing time. The system includes a first process chemical supply line, a second process chemical supply line, and one or more nozzles configured to produce uniform mixing within a target mixing distance and target mixing time.Type: ApplicationFiled: October 1, 2012Publication date: December 5, 2013Applicant: TOKYO ELECTRON LIMITEDInventor: Ian J. Brown
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Publication number: 20130303421Abstract: Photoresist stripping solutions are disclosed. An exemplary solution includes an organic solvent and an organic base, wherein the organic base is represented by the formula: wherein R1—Z1, R2—Z2, R3—Z3, and R4—Z4 are steric hindered functional groups, and further wherein R1, R2, R3, and R4 are each an alkyl group and Z1, Z2, Z3, and Z4 are each a pendant group selected from the group consisting of —Cl, —Br, —I, —NO2, —SO3—, —H—, —CN, —NCO, —OCN, —CO2—, —OC(O)CR*, —SR*, —SO2N(R*)2, —SO2R*, —OC(O)R*, —C(O)R*, —Si(R*)3, and an epoxyl group.Type: ApplicationFiled: July 15, 2013Publication date: November 14, 2013Inventors: Chien-Wei Wang, Ching-Yu Chang
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Publication number: 20130296214Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.Type: ApplicationFiled: July 15, 2011Publication date: November 7, 2013Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jeffrey A. Barnes, Steven Lippy, Peng Zhang, Rekha Rajaram
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Publication number: 20130296215Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.Type: ApplicationFiled: July 8, 2013Publication date: November 7, 2013Inventors: Madhukar Bhaskara RAO, Gautam BANERJEE, Thomas Michael Wieder, Yi-Chia LEE, Wen Dar LIU, Aiping WU
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Patent number: 8563408Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.Type: GrantFiled: June 28, 2012Date of Patent: October 22, 2013Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Mahmoud Khojasteh, Ronald W. Nunes, George G. Totir
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Patent number: 8563495Abstract: There are provided a resist remover composition containing an amide solvent (A) represented by the following formula (1) and an organic amine compound (B), and a method for removing a resist using the resist remover composition, i.e., a resist remover composition that provides a sufficient removing capability even in a state where a resist is dissolved therein and is capable of being used for a prolonged period of time, and a method for removing a resist using the same. wherein R1 represents a linear, branched or cyclic alkyl group having from 1 to 6 carbon atoms; R2 and R3 each independently represent a linear or branched alkyl group having from 1 to 3 carbon atoms; and n represents an integer of from 0 to 2.Type: GrantFiled: January 29, 2010Date of Patent: October 22, 2013Assignee: Idemitsu Kosan Co., Ltd.Inventors: Toyozo Fujioka, Hayato Yamasaki
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Patent number: 8557757Abstract: A cleaning composition for cleaning microelectronic or nanoelectronic devices, the cleaning composition having HF as the sole acid and sole fluoride compound in the composition, at least one primary solvent selected from the group consisting of sulfones and selenones, at least one polyhydroxyl alkyl or aryl alcohol co-solvent having metal ion complexing or binding sites, and water, and optionally at least one phosphonic acid corrosion inhibitor compound and the is free of amines, bases and other salts.Type: GrantFiled: January 14, 2010Date of Patent: October 15, 2013Assignee: Avantor Performance Materials, Inc.Inventors: Chien-Pin S. Hsu, Glenn Westwood, William R. Gemmill
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Patent number: 8551682Abstract: Resist stripping agents useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits and/or liquid crystals with reduced metal and metal alloy etch rates (particularly copper etch rates and TiW etch rates), are provided with methods for their use. The preferred stripping agents contain low concentrations of resorcinol or a resorcinol derivative, with or without an added copper salt, and with or without an added amine to improve solubility of the copper salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.Type: GrantFiled: October 30, 2007Date of Patent: October 8, 2013Assignee: Dynaloy, LLCInventors: John M. Atkinson, Kimberly Dona Pollard, Gene Goebel
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Patent number: 8551928Abstract: A multi-agent type cleaning kit for applying to semiconductor substrates, which contains a foaming agent having an alkylene carbonate and a carbonic acid salt, a foaming aid having an acidic compound, and an oxidizing agent; at least the foaming agent is mixed with the foaming aid upon using for the cleaning of a semiconductor substrate, in combination with the oxidizing agent.Type: GrantFiled: October 26, 2011Date of Patent: October 8, 2013Assignee: FUJIFILM CorporationInventor: Tetsuya Kamimura
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Publication number: 20130231271Abstract: Provided are a photoresist residue and polymer residue removing liquid composition, and a method of removing the residue used therewith, for removing photoresist residue and polymer residue produced during a process of manufacturing a semiconductor circuit element having metallic wiring. Specifically, the composition does not contain nitrogen-containing organic hydroxyl compounds, ammonia or fluorine compounds, and contains an aliphatic polycarboxylic acid having a melting point of 25° C. or higher with an excellent residue removing property and having a metallic oxide main component as the residue removing component. The photoresist residue and polymer residue removing liquid composition, and the method of removing the residue used therewith, is capable of preventing the aliphatic polycarboxylic acid from being recrystallized by evaporation of water after a solution has adhered around a cleaning device liquid ejecting nozzle or a cleaning tank and a chamber.Type: ApplicationFiled: September 2, 2011Publication date: September 5, 2013Applicant: Kanto Kagaku Kabushiki KaishaInventor: Takuo Ohwada
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Patent number: 8518865Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.Type: GrantFiled: August 19, 2010Date of Patent: August 27, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Madhukar Bhaskara Rao, Gautam Banerjee, Thomas Michael Wieder, Yi-Chia Lee, Wen Dar Liu, Aiping Wu
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Publication number: 20130200040Abstract: A chemical solution that removes undesired metal hard mask yet remains selective to the device wiring metallurgy and dielectric materials. The present disclosure decreases aspect ratio by selective removal of the metal hard mask before the metallization of the receiving structures without adverse damage to any existing metal or dielectric materials required to define the semiconductor device, e.g. copper metallurgy or device dielectric. Thus, an improved aspect ratio for metal fill without introducing any excessive trapezoidal cross-sectional character to the defined metal receiving structures of the device will result.Type: ApplicationFiled: March 14, 2013Publication date: August 8, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventor: INTERNATIONAL BUSINESS MACHINES CORPORATION
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Patent number: 8497233Abstract: A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point >65° C., at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device.Type: GrantFiled: February 18, 2010Date of Patent: July 30, 2013Assignee: Avantor Performance Materials, Inc.Inventor: Glenn Westwood
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Patent number: 8486880Abstract: Provided are a composition for removing a photoresist and a method of manufacturing a semiconductor device using the composition. The composition includes about 60-90 wt % of dimethyl sulfoxide, about 10-30 wt % of a polar organic solvent, about 0.5-1.5 wt % of hydroxy alkyl ammonium and about 1-10 wt % of an amine containing no hydroxyl group.Type: GrantFiled: November 14, 2011Date of Patent: July 16, 2013Assignees: Samsung Electronics Co., Ltd., Cheil Industries Inc.Inventors: Dong-Min Kang, Dongchan Bae, Kyoochul Cho, Baiksoon Choi, Seunghyun Ahn, Myungkook Park, Goun Kim
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Patent number: 8481472Abstract: A highly aqueous acidic cleaning composition for copper oxide etch removal from Cu-dual damascene microelectronic structures and wherein that composition prevents or substantially eliminates copper redeposition on the Cu-dual damascene microelectronic structure.Type: GrantFiled: October 6, 2009Date of Patent: July 9, 2013Assignee: Avantor Performance Materials, Inc.Inventors: Glenn Westwood, Seong Jin Hong, Sang In Kim
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Publication number: 20130172225Abstract: Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, a secondary solvent, and less than about 3 wt. % water. Methods for the preparation and use of the improved dry stripping solutions are additionally provided.Type: ApplicationFiled: February 5, 2013Publication date: July 4, 2013Applicant: DYNALOY, LLCInventors: Michael Phenis, Lauri Johnson, Raymond Chan, Diane Scheele, Kimberly Pollard
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Publication number: 20130161840Abstract: Back end of line (BEOL) stripping solutions which can be used in a stripping process that replaces etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with good efficiency and with low and acceptable metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain a polar aprotic solvent, water, an amine and a quaternary hydroxide that is not tetramethylammonium hydroxide. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.Type: ApplicationFiled: February 19, 2013Publication date: June 27, 2013Applicant: DYNALOY LLCInventor: Dynaloy LLC
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Patent number: 8455420Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.Type: GrantFiled: June 28, 2012Date of Patent: June 4, 2013Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Mahmoud Khojasteh, Ronald W. Nunes, George G. Totir
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Patent number: 8455419Abstract: Disclosed is a stripping agent that can easily strip a photoresist residue and the like at a low temperature in a short time and, at the same time, does not corrode a wiring material at all and has no need to use an organic solvent such as alcohol as a rinsing liquid. The stripping agent disclosed herein comprises 5 to 50% by mass of a specific amine, 30 to 65% by mass of a specific acid amide, 0.1 to 15% by mass of a saccharide or a sugar alcohol, and 1 to 64.5% by mass of water.Type: GrantFiled: November 16, 2011Date of Patent: June 4, 2013Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Toshihiro Nomura, Masahide Matsubara, Seiji Naito, Takashi Nakamura, Yuuichi Sugano
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Patent number: 8449681Abstract: A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent.Type: GrantFiled: December 16, 2010Date of Patent: May 28, 2013Assignee: Intermolecular, Inc.Inventors: Anh Duong, Indranil De
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Publication number: 20130126470Abstract: A stripping solution for photolithography including hydrofluoric acid, a basic compound represented by general formula (b-1), and water. In the formula, R1b to R5b represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or the like, and at least one of R1b to R5b represents a hydrogen atom. One of R1b to R4b may bind with R5b to form a ring structure. Y1b and Y2b represent an alkylene group having 1 to 3 carbon atoms, and n is an integer of 0 to 5.Type: ApplicationFiled: October 30, 2012Publication date: May 23, 2013Applicant: TOKYO OHKA KOGYO CO., LTD.Inventor: Tokyo Ohka Kogyo Co., Ltd.
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Patent number: 8444768Abstract: Compositions and methods useful for the removal of organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. A method is presented which applies a minimum volume of the composition as a coating to the inorganic substrate whereby sufficient heat is added and immediately rinsed with water to achieve complete removal. These compositions and methods are particularly suitable for removing and completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices.Type: GrantFiled: March 27, 2009Date of Patent: May 21, 2013Assignee: Eastman Chemical CompanyInventors: Michael Wayne Quillen, Dale Edward O'Dell, Zachary Philip Lee, John Cleaon Moore, Edward Enns McEntire
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Publication number: 20130123159Abstract: An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.Type: ApplicationFiled: November 14, 2011Publication date: May 16, 2013Applicants: ADVANCED TECHNOLOGY MATERIALS, INC., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ali Afzali-Ardakani, John A. Fitzsimmons, Nicholas C.M. Fuller, Mahmoud Khojasteh, Jennifer V. Muncy, George G. Totir, Karl E. Boggs, Emanuel I. Cooper, Michael W. Owens, James L. Simpson
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Patent number: 8440599Abstract: A composition comprising one or more water soluble organic solvents comprising a glycol ether; water; a fluoride containing compound provided that if the fluoride containing compound is ammonium fluoride than no additional fluoride containing compound is added to the composition; optionally a quaternary ammonium compound; and optionally a corrosion inhibitor is disclosed herein that is capable of removing residues from an article such as photoresist and/or etching residue. Also disclosed herein is a method for removing residues from an article using the composition disclosed herein.Type: GrantFiled: August 25, 2011Date of Patent: May 14, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Matthew I. Egbe, Michael Walter Legenza, Thomas Michael Weider, Jennifer May Rieker
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Patent number: 8440389Abstract: Back end of line (BEOL) stripping solutions which can be used in a stripping process that replaces etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with good efficiency and with low and acceptable metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain a polar aprotic solvent, water, an amine and a quaternary hydroxide that is not tetramethylammonium hydroxide. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.Type: GrantFiled: June 24, 2009Date of Patent: May 14, 2013Assignee: Dynaloy, LLCInventors: Kimberly Dona Pollard, John M. Atkinson, Raymond Chan, Michael T. Phenis, Allison C. Rector, Donald Pfettscher
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Publication number: 20130116159Abstract: A photoresist and post etch cleaning solution for semiconductor wafers comprising: A. a polar aprotic solvent, B. an inorganic base; C. a co-solvent for said inorganic base; D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; E. an organic base comprising an amine compound; and F. a nonionic surfactant bearing at least one ether group. The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.Type: ApplicationFiled: October 15, 2012Publication date: May 9, 2013Applicant: DYNALOY, LLCInventor: DYNALOY, LLC
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Publication number: 20130109605Abstract: A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.Type: ApplicationFiled: December 18, 2012Publication date: May 2, 2013Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventor: ADVANCED TECHNOLOGY MATERIALS, INC.
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Publication number: 20130099260Abstract: Disclosed herein is a resist stripping composition, which has an excellent ability of stripping a residual resist remaining after dry or wet etching at the tune of forming patterns in a process of manufacturing a flat panel display substrate.Type: ApplicationFiled: October 24, 2012Publication date: April 25, 2013Applicant: DONGWOO FINE-CHEM CO., LTD.Inventor: DONGWOO FINE-CHEM CO., LTD.
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Patent number: 8399391Abstract: A photoresist residue removal composition is provided. The photoresist residue removal composition essentially contains glycolic and water, to which a pH control agent and/or a cleanability improver is selectively added. The photoresist residue removal composition has a high capability to remove residues caused by plasma etching and ashing of a metal or silicon oxide layer under a photoresist pattern, does not cause corrosion, and is eco-friendly.Type: GrantFiled: October 28, 2009Date of Patent: March 19, 2013Inventor: Ho Sung Choi
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Patent number: 8372792Abstract: The object of the present invention is to provide a novel cleaner composition that not only reduces ignition by flame and has a small influence on the environment, but that also has an excellent property of dissolving flux residues adhered on narrow portions or in narrow gaps in an object to be cleaned that was subjected to soldering with a lead-free solder, and reduces recontamination of the object in the water-rinsing process. The present invention uses a halogen-free organic solvent (A) represented by a specific Formula; an amine-based compound (B) represented by a specific Formula; a chelating agent having no amino group (C); and, as required, water.Type: GrantFiled: August 8, 2008Date of Patent: February 12, 2013Assignee: Arakawa Chemical Industries, Ltd.Inventors: Takashi Tanaka, Kazutaka Zenfuku
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Publication number: 20130035272Abstract: Semiconductor processing compositions comprising amidoxime compounds having two or more amidoxime functional groups and their use in semiconductor processing to remove photoresist, polymeric materials, etching residues and copper oxides from semiconductor substrates, particularly substrates comprising copper, low-k dielectric material, titanium nitride, and/or titanium oxynitride.Type: ApplicationFiled: January 19, 2012Publication date: February 7, 2013Inventors: Wai Mun Lee, Hua Cui, Mark A. Scialdone, Albert G. Anderson
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Patent number: 8361237Abstract: The present invention is a formulation for wet clean removal of post etch and ash residue from a semiconductor substrate having a CoWP feature, comprising; Deionized water; Organic acid; Amine and/or quaternary ammonium hydroxide; wherein the formulation is compatible with the CoWP feature and either (a) the molar ratio of amine and/or quaternary ammonium hydroxide to organic acid provides a pH in the range of 7-14; or (b) the formulation includes a corrosion inhibitor. A method of using the formulation is also described.Type: GrantFiled: November 24, 2009Date of Patent: January 29, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Aiping Wu, Madhukar Bhaskara Rao, Eugene C. Baryschpolec
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Publication number: 20130017636Abstract: A composition for removing a photoresist, the composition including about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide (“TMAH”), about 1% by weight to about 10% by weight of an alkanol amine, about 50% by weight to about 70% by weight of a glycol ether compound, about 0.01% by weight to about 1% by weight of a triazole compound, about 20% by weight to about 40% by weight of a polar solvent, and water, each based on a total weight of the composition.Type: ApplicationFiled: April 4, 2012Publication date: January 17, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Bong-Kyun KIM, Shin-Il CHOI, Hong-Sick PARK, Wang-Woo LEE, Seok-Jun JANG, Byung-Uk KIM, Sun-Joo PARK, Suk-Il YOON, Jong-Hyun JEONG, Soon-Beom HUR
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Patent number: 8354365Abstract: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to ILD materials, and excellent removal performance in relation to a resist film and a bottom antireflective coating film, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water soluble organic solvent, water, and an inorganic base. The water soluble organic solvent contains a highly polar solvent having a dipole moment of no less than 3.0 D, a glycol ether solvent and a polyhydric alcohol, and the total content of the highly polar solvent and the glycol ether solvent is no less than 30% by mass relative to the total mass of the liquid for lithography.Type: GrantFiled: January 28, 2011Date of Patent: January 15, 2013Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Takuya Ohhashi, Masaru Takahama, Takahiro Eto, Daijiro Mori, Shigeru Yokoi