Abstract: An agricultural formulation for conveying nutrients to a plant includes dendrimer nanoparticles, spherical nanoparticles, and an active ingredient.

Abstract: A novel method for synthesizing deuterated amides and deuterated sulfonamides includes the following steps: (1) adding a compound M, DMAP, R3—X to a solvent to obtain a compound N after a reaction is complete; and (2) adding the compound N, R4—NH—R5, or a salt and base thereof to a solvent, and purifying after a reaction is complete to obtain a compound I.

Abstract: A particle-polymer hybrid material can include: a substance having the structure of Formula 1 Z(Y-FP)m, wherein Z is a particle smaller than 1 mm; m is an integer; Y is a linker including a silicon atom linked to the particle; FP is a functionalized polymer having: a first structure derived from a first norbornene compound linked to the Y; and one or more repeating units linked to the first structure, each unit being derived from a second norbornene compound and having a functional group.

Abstract: A semiconductor memory device is disclosed, which relates to a technology for a serial cell structure of a phase change memory (PCM). The semiconductor memory device includes a plurality of unit cells stacked with a plurality of layers, and a single bit line formed to have a vertical structure and shared by the plurality of unit cells. Each unit cell includes a switching element including a source region, a drain region, and a channel region, and a phase change resistor (PCR) element formed over the switching element.

Abstract: The present invention relates to polymers, nanomaterials, and methods of making the same. Various embodiments provide an amphiphilic multi-arm copolymer. The copolymer includes a core unit and a plurality of amphiphilic block copolymer arms. Each block copolymer arm is substituted on the core unit. Each block copolymer arm includes at least one hydrophilic homopolymer subunit and at least one hydrophobic homopolymer subunit. In some examples, the copolymer can include a star-like or bottlebrush-like block copolymer, and can include a Janus copolymer. Various embodiments provide a nanomaterial. In some examples, the nanomaterial can include Janus nanomaterials, and can include nanoparticles, nanorods, or nanotubes. The nanomaterial includes the amphiphilic multi-arm copolymer and at least one inorganic precursor. The inorganic precursor can be coordinated to at least one homopolymer subunit of one of the amphiphilic block copolymer arms to form the nanomaterial.

Abstract: Layered catalyst structures for fuel cells, particularly for a Proton Exchange Membrane Fuel Cell (PEMFC), are produced by a reactive spray deposition technology process. The catalyst layers so produced contain particles sized between 1 and 15 nm and clusters of such particles of a catalyst selected from the group consisting of platinum, platinum alloys with transition metals, mixtures thereof and non-noble metals. The catalyst layers without an electrically conducting supporting medium exhibit dendritic microstructure, providing high electrochemically active surface area and electron conductivity at ultra-low catalyst loading. The catalyst layers deposited on an electrically conducting medium, such as carbon, exhibit three-dimensional functional grading, which provides efficient utilization as a catalyst, high PEMFC performance at the low catalyst loading, and minimized limitations caused by reactant diffusion and activation. The catalytic layers may be produced by a single-run deposition method.

Abstract: According to one embodiment, a semiconductor device in which CNTs are used for a contact via comprise a substrate including a contact via groove, a catalyst layer for CNT growth which is formed at the bottom of the groove, and a CNT via formed by filling the CNTs into the groove in which the catalyst layer is formed. Each of the CNTs is formed by stacking a plurality of graphene layers in a state in which they are inclined depthwise with respect to the groove, and formed such that ends of the graphene layers are exposed on a sidewall of the CNT. Further, the CNT is doped with at least one element from the sidewall of the CNT.

Abstract: In accordance with the purpose(s) of the invention, as embodied and broadly described herein, the invention, in one aspect, relates to compounds comprising the structure: and at least one guanidinium residue, wherein m is zero or a positive integer. Also disclosed are methods of preparing the disclosed compounds. Also disclosed are methods of intracellular delivery comprising administering the disclosed compounds and compositions to a subject. Also disclosed are pharmaceutical compositions comprising a therapeutically effective amount of one or more compounds or compositions of the invention and a pharmaceutically acceptable carrier. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: A semiconductor device of this invention has an array of non-volatile memory cells, may operate immediately after power activation to write data on and read out the data without reading from an external portion. Further, this invention is free from the lithographic process of the phase-change layer on the manufacturing process.

Abstract: The present invention relates to hierarchical structured nanotubes, to a method for preparing the same and to an application for the same, wherein the nanotubes include a plurality of connecting nanotubes for constituting a three-dimensional multi-dendrite morphology; and the method includes the following steps: (A) providing a polymer template including a plurality of organic nanowires; (B) forming an inorganic layer on the surface of the organic nanowires in the polymer template; and (C) performing a heat treatment on the polymer template having the inorganic layer on the surface so that partial atoms of the organic nanowires enter the inorganic layer.

Abstract: The present invention relates to the improvement of organic electroluminescent devices, in particular blue-emitting devices, by using compounds of the formula (1) or formula (2) as dopants in the emitting layer or as hole-transport material in a hole-transport layer.

Abstract: Nanostructured microelectrodes and biosensing devices incorporating the same are disclosed herein.

Abstract: A semiconductor integrated circuit system includes a phase-change line including a first phase-change area constituting a first memory cell and a second phase-change area constituting a second memory cell, a write current providing unit configured to phase-change a selected one of the first and second phase-change areas, and a phase-change compensation unit configured to restore the other of the first and second phase-change areas by compensating for a dummy phase-change caused in the other phase-change area due to a phase-change of the selected phase-change area.

Abstract: A semiconductor integrated circuit system includes a phase-change line including a first phase-change area constituting a first memory cell and a second phase-change area constituting a second memory cell, a write current providing unit configured to phase-change a selected one of the first and second phase-change areas, and a phase-change compensation unit configured to restore the other of the first and second phase-change areas by compensating for a dummy phase-change caused in the other phase-change area due to a phase-change of the selected phase-change area.

Abstract: The present invention provides graphene nuclei including monolayer single-crystalline graphene nuclei and a method of growing from them two-dimensional graphene dendrites, with aspect ratio of the main branches increasing with growth time, on catalytic metal surface using thermal chemical vapor deposition. By controlling the supply rates of the carbon etching gas and the carbon deposition species, it results in graphene branches being merged to form a two-dimensional monolayer single-crystalline graphene plate and further allows multiple graphene plates to merge and form a large-area continuous monolayer graphene plate.

Abstract: An RC-based sensing scheme to effectively sense the cell resistance of a programmed Phase Change Material (PCM) memory cell. The sensing scheme ensures the same physical configuration of each cell (after programming): same amorphous volume, same trap density/distribution, etc. The sensing scheme is based on a metric: the RC based sense amplifier implements two trigger points. The measured time interval between these two points is used as the metric to determine whether the programmed cell state, e.g., resistance, is programmed into desired value. The RC-based sensing scheme is embedded into an iterative PCM cell programming technique to ensure a tight distribution of resistance at each level after programming; and ensure the probability of level aliasing is very small, leading to less problematic drift.

Abstract: The present invention relates to new high-functionality, highly branched or hyperbranched polylysines, to processes for preparing them, and to their use.

Abstract: A semiconductor memory device substantially prevents a faulty operation from being generated in a read operation, and increases the operation reliability. The semiconductor memory device includes a cell array configured to include a memory element having a different resistance value in response to data, a sense-amp configured to sense and amplify the data, a global bit line configured to couple the sense-amp to a cell array, and a discharge unit configured to discharge the global bit line prior to execution of a read operation.

Abstract: A semiconductor integrated circuit system includes a phase-change line including a first phase-change area constituting a first memory cell and a second phase-change area constituting a second memory cell, a write current providing unit configured to phase-change a selected one of the first and second phase-change areas, and a phase-change compensation unit configured to restore the other of the first and second phase-change areas by compensating for a dummy phase-change caused in the other phase-change area due to a phase-change of the selected phase-change area.

Abstract: A metron refers to a molecule which contains a pre-defined number of high affinity binding sites for metal ions. Metrons may be used to prepare homogenous populations of nanoparticles each composed of a same, specific number of atoms, wherein each particle has the same size ranging from 2 atoms to about ten nanometers.

Abstract: Provided are methods for introducing a molecule of interest into a plant cell having a cell wall by using dendrimers, and optionally one or more Cell Penetrating Peptides (CPPs). Methods are provided for genetically or otherwise modifying plants and for treating or preventing disease in plant cells comprising a cell wall.

Abstract: Disclosed are synthetic nanocarrier methods, and related compositions, comprising B cell and/or MHC Class II-restricted epitopes and immunosuppressants in order to generate tolerogenic immune responses, such as the generation of antigen-specific regulatory B cells.

Abstract: According to one embodiment, a liquid crystal/polymer complex includes a liquid crystal material, a polymer, and a chiral agent. The liquid crystal material exhibits blue phase and contains liquid crystal molecules that are spirally arranged to form liquid crystal molecular cylinders having a spiral arrangement. The polymer maintains the arrangement and has a dendrimer-type structure including a dendrimer unit and a polymerizable unit bonded to an end of the dendrimer unit. The dendrimer unit contains a central atom and at least two branched structures bonded to the central atom and has a generation of two or more. The polymerizable unit contains a polymerizable group which can bond to a polymerizable group.

Abstract: Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus “activating” the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity.

Abstract: The invention relates to novel multifunctional dendrimer structures with a high loading capacity. Said dendrimer structures include a nucleus having at least a first generation or an end generation covalently bonded thereto. The first generation is formed by at least two of the following structures, namely: a spacer, a load, a branching element. In addition, a plurality of sequences (known as intermediary generations) with at least two of the aforementioned structures can be joined to the first generation. The terminal generation is formed by at least three of the following structures, namely: a spacer, a load, a branching element and a terminal.

Abstract: An arrangement of elongated nanowires that include titanium silicide or tungsten silicide may be grown on the exterior surfaces of many individual electrically conductive microfibers of much larger diameter. Each of the nanowires is structurally defined by an elongated, centralized titanium silicide or tungsten silicide nanocore that terminates in a distally spaced gold particle and which is co-axially surrounded by a removable amorphous nanoshell. A gold-directed catalytic growth mechanism initiated during a low pressure chemical vapor deposition process is used to grow the nanowires uniformly along the entire length and circumference of the electrically conductive microfibers where growth is intended. The titanium silicide- or tungsten silicide-based nanowires can be used in a variety electrical, electrochemical, and semiconductor applications.

Abstract: The leakage current and power consumption of phase change memories may be reduced using adaptive word line biasing. Depending on the particular voltage applied to the bitline of a programmed cell, the word lines of unselected cells may vary correspondingly. In some embodiments, the word line voltage may be caused to match the bitline voltage of the programmed cell.

Abstract: The present invention provides a gene transfer agent, a gene transfer kit, and a gene transfer method excellent in safety and transfer efficiency. Specifically, the present invention provides a gene transfer agent composition, the gene transfer agent composition including a compound represented by any one of the following formulae DL-G1 to DL-G4: DL-G1: R1R2NX(XH2)2; DL-G2: R1R2NX(X(XH2)2)2; DL-G3: R1R2NX(X(X(XH2)2)2)2; and DL-G4: R1R2NX(X(X(X(XH2)2)2)2)2 (X represents —CH2CH2CONHCH2CH2N—), in which: R1 represents an unsaturated long-chain aliphatic group; and R2 represents an unsaturated long-chain aliphatic group or a saturated long-chain aliphatic group in the formulae.

Abstract: A method for fabricating a dynamic random access memory (DRAM) capacitor includes forming a first electrode film. The first electrode film comprises a conductive binary metal compound and a dopant. The dopant may have a uniform or non-uniform concentration within the first electrode film. A high-k dielectric film is formed over the first electrode film. A second electrode film is formed over the dielectric film. The second electrode film comprises a conductive binary metal compound and a dopant. The dopant may have a uniform or non-uniform concentration within the second electrode film. The dopants and their distribution are chosen so that the crystal structure of the surface of the electrode is not degraded if the electrode is to be used as a templating structure for subsequent layer formation. Additionally, the dopants and their distribution are chosen so that the work function of the electrodes is not degraded.

Abstract: A one step process for making a dendritic hydrocarbon polymer, e.g., dendritic polyolefin, by metathesis insertion polymerization. The process comprises polymerizing an amount of one or more cyclic olefins and one or more multi-functional (meth)acrylates in the presence of a metathesis catalyst and under conditions sufficient to produce the dendritic hydrocarbon polymer. The one or more multi-functional (meth)acrylates have a functionality of 3 or higher. The dendritic hydrocarbon polymer can be hydrogenated to produce a substantially saturated dendritic hydrocarbon polymer. The hydrogenation can take place in the same reaction vessel as the polymerization, i.e., one pot process.

Abstract: In accordance with some embodiments, a phase change memory may be formed in which the thermal conductivity in the region outside the programmed volume of phase change material is reduced. This may reduce the power consumption of the resulting phase change memory. The reduction in power consumption may be achieved by forming distinct layers of phase change material that have little or no mixing between them outside the programmed volume. For example, in one embodiment, a diffusion barrier layer may be maintained between the two distinct phase change layers. In another embodiment, a face centered cubic chalcogenide structure may be utilized.

Abstract: A phase change memory in the reset state may be heated to reduce or eliminate electrical drift.

Abstract: The application relates to a composition comprising a hyperbranched polymer attached to a core and a biologically active moiety. The biologically active moiety is attached to the core by means of a substantially non-enzymatically cleavable linker L. The composition can be used to deliver the biologically active moiety to its target.

Abstract: A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined programming scheme to achieve a target resistance level of the PCM cell, wherein the programming scheme is operable to perform in a first programming mode one or more annealing steps to approach the target resistance, wherein the programming scheme is operable to perform in a second programming mode one or more melting steps, wherein the programming scheme is operable to start in the first programming mode and to switch to the second programming mode if the target resistance level of the PCM cell has been undershot in the first programming mode.

Abstract: A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined programming scheme to achieve a target resistance level of the PCM cell, wherein the programming scheme is operable to perform in a first programming mode one or more annealing steps to approach the target resistance, wherein the programming scheme is operable to perform in a second programming mode one or more melting steps, wherein the programming scheme is operable to start in the first programming mode and to switch to the second programming mode if the target resistance level of the PCM cell has been undershot in the first programming mode.

Abstract: The present invention relates to polymers, nanomaterials, and methods of making the same. Various embodiments provide an amphiphilic multi-arm copolymer. The copolymer includes a core unit and a plurality of amphiphilic block copolymer arms. Each block copolymer arm is substituted on the core unit. Each block copolymer arm includes at least one hydrophilic homopolymer subunit and at least one hydrophobic homopolymer subunit. In some examples, the copolymer can include a star-like or bottlebrush-like block copolymer, and can include a Janus copolymer. Various embodiments provide a nanomaterial. In some examples, the nanomaterial can include Janus nanomaterials, and can include nanoparticles, nanorods, or nanotubes. The nanomaterial includes the amphiphilic multi-arm copolymer and at least one inorganic precursor. The inorganic precursor can be coordinated to at least one homopolymer subunit of one of the amphiphilic block copolymer arms to form the nanomaterial.

Abstract: The present invention relates to novel therapeutic and diagnostic dendrimers. In particular, the present invention is directed to dendrimer-linker conjugates, methods of synthesizing the same, compositions comprising the conjugates, as well as systems and methods utilizing the conjugates (e.g., in diagnostic and/or therapeutic settings (e.g., for the delivery of therapeutics, imaging, and/or targeting agents (e.g., in disease (e.g., cancer) diagnosis and/or therapy, pain therapy, etc.)). Accordingly, dendrimer-linker conjugates of the present invention may further comprise one or more components for targeting, imaging, sensing, and/or providing a therapeutic or diagnostic material and/or monitoring response to therapy.

Abstract: A semiconductor memory device substantially prevents a faulty operation from being generated in a read operation, and increases the operation reliability. The semiconductor memory device includes a cell array configured to include a memory element having a different resistance value in response to data, a sense-amp configured to sense and amplify the data, a global bit line configured to couple the sense-amp to a cell array, and a discharge unit configured to discharge the global bit line prior to execution of a read operation.

Abstract: Amide compounds, amide polymers, compositions including amide compounds and amide polymers may be used to bind target ions, such as phosphorous-containing compounds in the gastrointestinal tract of animals. In some cases, amide compounds and amide polymers may include a core derived from an amide polyol and an organic polyacid or ester.

Abstract: A current supply circuit comprises a reference voltage generator generating a reference voltage that varies with temperature, a current circuit generating a constant reference current irrespective of the temperature based on the reference voltage, and a current source generating a mirror current by mirroring a base current as a replica current of the reference current.

Abstract: A phase change memory device includes a silicon substrate having a bar-type active region and an N-type impurity region formed in a surface of the active region. A first insulation layer is formed on the silicon substrate, and the first insulation layer includes a plurality of first contact holes and second contact holes. PN diodes are formed in the first contact holes. Heat sinks are formed in the first contact holes on the PN diodes, and contact plugs fill the second contact holes. A second insulation layer having third contact holes is formed on the first insulation layer. Heaters fill the third contact holes. A stack pattern of a phase change layer and a top electrode is formed to contact the heaters. The heat sink quickly cools heat transferred from the heater to the phase change layer.

Abstract: A proton exchange membrane comprising modified hyper-branched polymer is disclosed. The proton exchange membrane includes 85-90 wt % of sulfonated tetrafluorethylene copolymer and 15-10 wt % of modified hyper-branched polymer. The modified hyper-branched polymer comprises the bismaleimide (BMI)-based hyper-branched polymer, and parts of the chain ends of the hyper-branched polymer are sulfonated by the sulfonic compound. Also, the modified hyper-branched polymer and sulfonated tetrafluorethylene copolymer are interpenetrated to form an interpenetrating polymer. Furthermore, the modification step could be performed before or after forming the interpenetrating polymer. For example, the sulfonation is proceeded after forming the interpenetrating polymer. Alternatively, the sulfonation of the hyper-branched polymer could be proceeded before the formation of the interpenetrating polymer.

Abstract: A memory includes a programmable resistance array and unipolar MOS peripheral circuitry. The peripheral circuitry includes address decoding circuitry. Because unipolar MOS circuitry is employed, the number of mask steps and, concomitantly, the cost of the programmable resistance memory may be minimized.

Abstract: A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined programming scheme to achieve a target resistance level of the PCM cell, wherein the programming scheme is operable to perform in a first programming mode one or more annealing steps to approach the target resistance, wherein the programming scheme is operable to perform in a second programming mode one or more melting steps, wherein the programming scheme is operable to start in the first programming mode and to switch to the second programming mode if the target resistance level of the PCM cell has been undershot in the first programming mode.

Abstract: Methods and compositions to extract radionuclides such as various actinides and lanthanides from organic and/or aqueous solutions by utilizing extractant functionalized carbon nanotubes are disclosed. More particularly, phosphorous-containing (such as phosphine oxides, phosphoric acids or phosphates) organic extractants and other predesigned extractants (such as crown ethers, calncrown derivatives, malonamide and diglycolamide derivatives, polyethylene glycol derivatives, cobalt dicarbollide derivatives, and N-donating heterocyclic ligands) can be covalently and/or non-covalently employed on the surfaces and/or ends (tips) of carbon nanotubes for the purpose of removal radionuclides such as various actinides and lanthanides from organic and/or aqueous solutions. Extractant functionalized carbon nanotubes can be used for extracting radioactive nuclides from nuclear waste or spent nuclear fuel, which are produced and/or reprocessed from the nuclear power generation or other nuclear application.

Abstract: The present invention concerns methods and compositions for delivery of therapeutic agents to target cells, tissues or organisms. In preferred embodiments, the therapeutic agents are delivered in the form of therapeutic-loaded polymers that may comprise many copies of one or more therapeutic agents. In more preferred embodiments, the polymer may be conjugated to a peptide moiety that contains one or more haptens, such as HSG. The agent-polymer-peptide complex may be delivered to target cells by, for example, a pre-targeting technique utilizing bispecific or multispecific antibodies or fragments, having at least one binding arm that recognizes the hapten and at least a second binding arm that binds specifically to a disease or pathogen associated antigen, such as a tumor associated antigen. Methods for synthesizing and using such therapeutic-loaded polymers and their conjugates are provided.

Abstract: The present disclosure provides compositions and methods of treating Alzheimers Disease. In an aspect, a nanoparticle is paired to one or more genetic materials that regulates inflammation in a microenvironment. Such nanoparticles can be used to target predefined target cell types in connection with treatment of at least one of the following Alzheimer's disease, Pick's disease, Lewy Body disease, or Idiopathic dementia.

Abstract: Disclosed are synthetic nanocarrier compositions, and related methods, comprising CD1d-restricted antigens and immunosuppressants that provide tolerogenic immune responses.

Abstract: A substrate having buried address lines and a first dielectric layer is provided. A conductive electrode is formed in the first conductive layer. A top portion of the conductive electrode is exposed. A second dielectric layer is deposited on surface of the exposed top portion. The second dielectric layer defines a recess around the top portion. A third dielectric layer is deposited over the second dielectric layer. A portion of the third dielectric layer and a portion of the second dielectric layer are removed, thereby exposing a top surface of the top portion of the conductive electrode. The top portion of the conductive electrode is salicidized to form a heating stem. The remaining third dielectric layer is selectively removed from the recess. A phase-change material layer covers the heating stem and the second dielectric layer. The phase-change material layer is etched, thereby forming a phase-change storage cap.

Abstract: Disclosed are synthetic nanocarrier methods, and related compositions, comprising B cell and/or MHC Class II-restricted epitopes and immunosuppressants in order to generate tolerogenic immune responses, such as the generation of antigen-specific regulatory B cells.