Abstract: A method for designing, fabricating, and predicting a desired structure in and/or on a host material through defining etch masks and etching the host material is provided. The desired structure can be micro- or nanoscale structures, such as suspended nanowires and corresponding supporting pillars, and can be defined one layer at a time. Arbitrary desired structures can also be defined and obtained through etching. Further, given the desired structure, a starting structure can be predicted where etching of the starting structure yields the desired structure.

Abstract: To provide a method for producing a thin film consisting of nanosheet monolayer film(s) and use of the thin film obtained thereby. The method for producing a thin film consisting of nanosheet monolayer film(s) by a spin coat method according to the invention comprises a step for preparing an organic solvent sol formed by allowing nanosheets obtained by the exfoliation of an inorganic layered compound to be dispersed in an organic solvent; and a step for dropping the organic solvent sol onto a substrate and rotating the substrate using a spin coater. Preferably, the nanosheet size, the organic solvent sol concentration and the spin coater rotation speed are controlled.

Abstract: Disclosed herein is a method for preparing large soluble graphenes. The method comprises attaching one or more hindering groups to the graphene, which can prevent face-to-face graphene stacking by reducing the effects of inter-graphene attraction. The large graphenes can absorb a wide spectrum of light from UV to near infrared, and are useful in photovoltaic devices and sensitizers in nanocrystalline solar cells.

Abstract: A fuel cell catalyst layer includes first spaced apart strands extending longitudinally in a first direction, second spaced apart strands extending longitudinally in a second direction, the first and second spaced apart strands collectively defining openings bounded by an adjacent pair of the first spaced apart strands and an adjacent pair of the second spaced apart strands, a number of wires extending longitudinally in a third direction from one of the first and second spaced apart strands, the wires including an organic material, and a catalyst contacting at least a portion of the plurality of wires.

Abstract: The invention aims at providing a platinum black material, without using an expensive and rare material, which is excellent in CO poisoning inhibiting effect, H2S poisoning inhibiting effect, SO4 poisoning inhibiting effect and HCHO poisoning inhibiting effect, and a method for fluorinating platinum black. The platinum black material is characterized by fluorine adsorbed on its surface. The method for fluorinating platinum black is characterized by allowing platinum black to stand in a mixed gas atmosphere of n inert gas and fluorine in a low-pressure chamber to make fluorine adsorbed on the surface of the platinum black.

Abstract: A carbonaceous particle is provided which comprises a hexagonal flake formed of an aggregate of a plurality of nanocarbons and having a side length of 0.1 to 100 mm and a thickness of 10 nm to 1 mm. Thereby, a carbonaceous particle is provided which has an excellent electron emission performance, has a high electron conductivity, shows excellent characteristics particularly when used for a secondary battery, and can suitably be applied to various devices other than a secondary battery as well.

Abstract: A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Abstract: Provided is a method of manufacturing a nano scale semiconductor device, such as a nano scale P-N junction device or a CMOS using nano particles without using a mask or a fine pattern. The method includes dispersing uniformly a plurality of nano particles on a semiconductor substrate, forming an insulating layer covering the nano particles on the semiconductor substrate, partly removing the upper surfaces of the nano particles and the insulating layer, selectively removing the nano particles from the insulating layer, and partly forming doped semiconductor layers in the semiconductor substrate by partly doping the semiconductor substrate through spaces formed by removing the nano particles.