Growth By Vaporization Or Dissociation Of Carbon Source Using A High-energy Heat Source (e.g., Electric Arc, Laser, Plasma, E-beam, Etc.) Patents (Class 977/844)
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Patent number: 7494638Abstract: C60 and C70 carbon atom compounds are prepared by evaporating graphite in an inert quenching gas. The vapor of carbon is collected and is selectively extracted with an organic non-polar solvent.Type: GrantFiled: September 10, 1990Date of Patent: February 24, 2009Assignee: Mitsubishi CorporationInventors: Donald R. Huffman, Wolfgang Krätschmer
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Publication number: 20090022651Abstract: Carbon nanotubes are more efficiently produced with a simpler apparatus. The process, which is for producing carbon nanotubes by the combustion method, is characterized by comprising: a step in which a catalyst-supporting powder comprising a base powder and a catalyst supported on the surface thereof is prepared; a step in which the catalyst-supporting powder is deposited on a porous support (2) having through-holes through which a flame passes, so that the powder particles are held in the through-holes without tenaciously adhering to one another; a step in which the porous support (2) having the catalyst-supporting powder held thereon is disposed in a combustion oven (1) in which one end (1b) is open; and a step in which a carbon-containing flame is generated in a burner part (3) disposed at the other end (1a) of the combustion oven (1) and the flame is fed to the through-holes of the porous support (2) to produce carbon nanotubes on the surface of the catalyst-supporting powder present in the through-holes.Type: ApplicationFiled: January 31, 2007Publication date: January 22, 2009Inventors: Masato Tani, Toshiki Goto
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Patent number: 7473410Abstract: C60 and C70 carbon atom compounds are prepared by evaporating graphite in an inert quenching gas. The vapor of carbon is collected and is selectively extracted with an organic non-polar solvent.Type: GrantFiled: May 2, 1994Date of Patent: January 6, 2009Assignee: Mitsubishi CorporationInventors: Donald R. Huffman, Wolfgang Krätschmer
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Patent number: 7473873Abstract: An apparatus and method for synthesizing nanostructures. In one embodiment, the apparatus includes a reactor having a reaction zone and a conductive susceptor positioned in the reaction zone. The method includes the steps of transporting a gas mixture having an aerosolized catalyst, a feedstock and a carrier gas into the reaction zone of the reactor, inductively heating the reaction zone, and regulating a flow rate of the gas mixture to allow the catalyst to spend a sufficient amount of time in the reaction zone for the growth of nanostructures.Type: GrantFiled: September 15, 2005Date of Patent: January 6, 2009Assignee: The Board of Trustees of the University of ArkansasInventors: Alexandru Sorin Biris, Alexandru Radu Biris, Dan Lupu, Jon Gardner Wilkes, Dan Alexander Buzatu, Dwight Wayne Miller, Jerry A. Darsey
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Patent number: 7465430Abstract: There is described an apparatus for making metal oxide particles which are substantially free of coarse tail from an oxidizing agent and a metal reactant in a flow reactor. The apparatus can be a concentric tubular flow reactor comprising a substantially funnel-shaped reactant contacting region located adjacent to a reaction zone which is able to direct a flow of a hot oxidizing agent towards a flow of the metal reactant to form a reaction stream which flows downstream into a reaction zone, whereby the hot oxidizing agent of the reaction stream is able to surround the flow of metal reactant sufficient to prevent the metal reactant from contacting the wall of the reactant contacting region and forming scale on the wall.Type: GrantFiled: July 18, 2005Date of Patent: December 16, 2008Assignee: E. I. du Pont de Nemours and CompanyInventors: Juergen Kurt Plischke, Stephan Claude De La Veaux, Scott Rickbeil Frerichs, Jodi Lynn Witt, Christian Normand
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Patent number: 7462343Abstract: This invention relates to a method for producing micro-domain graphitic materials by use of a plasma process, and to novel micro-conical graphitic materials. By micro-domain graphitic material we mean fullerenes, carbon nanotubes, open conical carbon structures (also named micro-cones), preferably flat graphitic sheets, or a mixture of two or all of these. The novel carbon material is open carbon micro-cones with total disclination degrees of 60° and/or 120°, corresponding to cone angles of respectively 112.9° and/or 83.6°.Type: GrantFiled: October 22, 2002Date of Patent: December 9, 2008Assignee: Kvafrner Technology and Research Ltd.Inventors: Steinar Lynum, Jan Hugdahl, Ketil Hox, Ragne Hildrum, Magne Nordvik
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Publication number: 20080280038Abstract: Methods of using thin metal layers to make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. Carbon nanotube growth catalyst is applied on to a surface of a substrate, including one or more thin layers of metal. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric are selectively removed according to a defined pattern to create the article. A non-woven fabric of carbon nanotubes may be made by applying carbon nanotube growth catalyst on to a surface of a wafer substrate to create a dispersed monolayer of catalyst. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes in contact and covering the surface of the wafer and in which the fabric is substantially uniform density.Type: ApplicationFiled: March 9, 2007Publication date: November 13, 2008Applicant: Nantero, Inc.Inventors: Jonathan W. Ward, Thomas Rueckes, Brent M. Segal
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Patent number: 7446024Abstract: The growth of nanowires with a narrow diameter distribution is provided. The growth comprises: providing a substrate; providing a plurality of nanoparticles having a distribution of particle sizes on the substrate; initiating growth of nanowires by a vapor-liquid-solid technique; and terminating growth of the nanowires.Type: GrantFiled: June 21, 2005Date of Patent: November 4, 2008Assignee: Hewlett-Packard Development Company, L.P.Inventor: Theodore I Kamins
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Publication number: 20080124482Abstract: There is provided a method for producing single-wall carbon nanotubes comprising condensing a plasma comprising atoms or molecules of carbon and atoms of a metal suitable for catalyzing the formation of single-wall carbon nanotubes in an oven at a predetermined temperature so as to provide a temperature gradient, thereby forming single-wall carbon nanotubes; and collecting the so-formed single-wall carbon nanotubes by passing them through an electrostatic trap comprising a pair of electrodes generating an electrical current so as to deposit at least a portion of the single-wall carbon nanotubes on one of the electrodes.Type: ApplicationFiled: April 12, 2007Publication date: May 29, 2008Inventors: Olivier SMILJANIC, Barry L. STANSFIELD
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Patent number: 7374731Abstract: A reaction apparatus for producing vapor-grown carbon fibers (VGCF) and a continuous production system for producing VGCF are disclosed. The VGCF reaction apparatus is featured in installing a plurality of holes on the upper portion of inner tubes; and filling thermally conductive material in the areas between the inner tubes and the outer tube. The continuous production system includes the reaction apparatus, a product collection system and a carrier-gas collecting system, wherein carbon fibers produced by the reaction apparatus fall into the product collection system, and in the product collection system, a collection bin full-loaded with carbon fibers is pushed out and an empty bin is pushed into the collection chamber under PLC control as well as atmosphere replacement with inert gas, thereby continuously producing VGCF.Type: GrantFiled: September 2, 2005Date of Patent: May 20, 2008Assignee: Yonyu Plastics Co., Ltd.Inventors: Chun-Shan Wang, Ya-Jen Huang, Yen-Chu Tan, Kai-Jen Ko, Shih-Peng Yang
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Patent number: 7365289Abstract: An apparatus for synthesizing nanostructures. In one embodiment, the apparatus includes a heating device that defines a reaction zone therein and a susceptor made of a ferromagnetic material with a Curie temperature and placed in the reaction zone, where the Curie temperature substantially corresponds to a temperature at which the growth of desired nanostructures occurs and the heating device is capable of heating the susceptor substantially at the Curie temperature.Type: GrantFiled: December 14, 2005Date of Patent: April 29, 2008Assignees: The United States of America as represented by the Department of Health and Human Services, Board of Trustees of the University of ArkansasInventors: Jon Gardner Wilkes, Dan Alexander Buzatu, Dwight Wayne Miller, Alexandru Sorin Biris, Alexandru Radu Biris, Dan Lupu, Jerry A. Darsey
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Patent number: 7358594Abstract: A low-k interconnect dielectric layer is strengthened by forming pillars of hardened material in the low-k film. An E-beam source is used to expose a plurality of pillar locations. The locations are exposed with a predetermined power and exposure time to convert the low-k film in the selected locations to pillars having higher hardness and strength than the surrounding portions of the low-k film.Type: GrantFiled: September 12, 2005Date of Patent: April 15, 2008Assignee: LSI Logic CorporationInventors: Derryl J. Allman, Charles May
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Patent number: 7338915Abstract: This invention provides a method of making single-wall carbon nanotubes by laser vaporizing a mixture of carbon and one or more Group VIII transition metals. Single-wall carbon nanotubes preferentially form in the vapor and the one or more Group VIII transition metals catalyzed growth of the single-wall carbon nanotubes. In one embodiment of the invention, one or more single-wall carbon nanotubes are fixed in a high temperature zone so that the one or more Group VIII transition metals catalyze further growth of the single-wall carbon nanotube that is maintained in the high temperature zone. In another embodiment, two separate laser pulses are utilized with the second pulse timed to be absorbed by the vapor created by the first pulse.Type: GrantFiled: November 27, 2000Date of Patent: March 4, 2008Assignee: Rice UniversityInventors: Richard E. Smalley, Daniel T. Colbert, Ting Guo, Andrew G. Rinzler, Pavel Nikolaev, Andreas Thess
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Patent number: 7297619Abstract: A system and method for making nanoparticles. The system includes a first cathode including a first metal tube associated with a first end and a second end, a first anode including a second metal tube associated with a third end and a fourth end, and a first container including a first gas inlet. The first end and the third end are located inside the first container. The first end and the third end are separated by a first gap, the first metal tube is configured to allow a first gas to flow from the second end to the first end, and the first container is configured to allow a second gas to flow from the first gas inlet into the second metal tube through at least a first part of the first gap.Type: GrantFiled: May 4, 2005Date of Patent: November 20, 2007Assignee: California Institute of TechnologyInventors: R. Mohan Sankaran, Konstantinos P. Giapis, Richard C. Flagan, Dean Holunga
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Patent number: 7291318Abstract: A method is presented for effectively manufacturing multi-wall (double-wall, etc.) carbon nanotubes (CNTs) having a structure whereby interior tubes are formed within the CNTs. In this manufacturing method, fullerene/CNT hybrid structures are prepared, wherein assembled fullerenes, these being fullerenes that are linked, have been housed within single-wall CNTs. The interior tubes are formed from the assembled fullerenes by subjecting the hybrid structures to electron beam irradiation while in a heated state. It is preferred that irradiation with the electron beams occurs at a temperature of 100˜500° C. and with the electron beams having an accelerating voltage of 80˜250 kV. According to the manufacturing method of the present invention, multi-wall CNTs with few defects can be manufactured at lower temperatures and in a shorter period than in the case where the fullerene/CNT hybrid structures are only maintained under high temperature conditions (and electron beam irradiation is not performed).Type: GrantFiled: October 20, 2003Date of Patent: November 6, 2007Assignee: Toyota Jidosha Kabushiki KaishaInventors: Yasunori Sakurabayashi, Takuya Kondo, Yasushi Yamazawa, Yoshinao Suzuki, Marc Monthioux, Mikako LE. Lay
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Patent number: 7161285Abstract: A fabrication method for an emitter includes the steps of forming on a glass substrate a CNT film which contains a plurality of carbon nanotubes (CNTs) and constitutes an emitter electrode, forming a gate electrode via an insulating film on the CNT film, forming a plurality of gate openings in the gate electrode and the insulating film, and aligning upright the CNTs in the gate opening. The upright alignment generates a stable uniform emission current and provides excellent emission characteristics.Type: GrantFiled: November 19, 2001Date of Patent: January 9, 2007Assignee: NEC CorporationInventors: Akihiko Okamoto, Kazuo Konuma, Yoshinori Tomihari, Fuminori Ito, Yuko Okada
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Patent number: 7147533Abstract: The present invention provides a method of producing an electron emitting device using a carbon fiber using a catalyst, capable of preferably growing carbon fibers at a low temperature without the need of a high temperature process for growing the carbon fibers or a high temperature alloy process on a substrate, and growing the carbon fibers by a density capable of applying an electric field necessary for the electron emission further effectively. Using alloy particles containing Pd and at least one element selected from the group consisting of Fe, Co, Ni, Y, Rh, Pt, La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, and Lu as the catalyst, a dispersion of the alloy particles is applied on a carbon fiber producing subject surface for providing the alloy particles so as to grow the carbon fibers.Type: GrantFiled: September 15, 2003Date of Patent: December 12, 2006Assignee: Canon Kabushiki KaishaInventors: Shinichi Kawate, Takeo Tsukamoto
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Patent number: 7135158Abstract: There is provided a method of purifying single wall carbon nanotubes so as to be able to remove impurities such as a metal catalyst to obtain the single wall carbon nanotubes with high purity. The method includes the first oxidizing step of oxidizing the single wall carbon nanotubes soot 1 containing an impurity with a metal catalyst 2, the first refluxing step of refluxing the single wall carbon nanotubes soot 1 obtained by the first oxidizing step in an acid solution, the second oxidizing step of oxidizing the single wall carbon nanotubes soot 1 obtained by the first refluxing step, and the second refluxing step of refluxing the single wall carbon nanotubes obtained soot 1 by the second oxidizing step in an acid solution. The single wall nanotubes 1 are synthesized by an arc discharge with a carbon electrode containing a metal catalyst 2. The carbon electrode contains a metal catalyst which consists of Ni, Y, and Ti. The first oxidizing step is performed by heating at a temperature between 350 and 600° C.Type: GrantFiled: June 11, 2002Date of Patent: November 14, 2006Assignee: Honda Giken Kogyo Kabushiki KaishaInventors: Hajime Goto, Terumi Furuta, Yoshiya Fujiwara, Toshiyuki Ohashi