Abstract: A hybrid semiconductor device is presented in which one or more diode regions are integrated into a transistor region. In a preferred embodiment the transistor region is a continuous (self-terminating) SOI LDMOS device in which are integrated one or more diode portions. Within the diode portions, since there is only one PN junction, the mechanism for breakdown failure due to bipolar turn-on is nonexistent. The diode regions are formed such that they have a lower breakdown voltage than the transistor region, and thus any transient voltage (or current) induced breakdown is necessarily contained in the diode regions. In a preferred embodiment, the breakdown voltage of the diode portions is lowered by narrowing their field plate length relative to the transistor portion of the device. This allows the device to survive any such breakdown without being destroyed, resulting in a more rugged and more reliable device.

Abstract: A differential charge pump with integrated common-mode control circuitry (100) for a fully differential phase-locked loop is described, having two output lines (OUT+; OUT−) and including a charge pump section (103) and a common-mode feedback section (106). In the charge pump section (103), current generating circuitry (111, 112, 113, 114) generates a first current signal having a first magnitude and a certain polarity on the first signal output (OUT+), and a second current signal having a second magnitude and opposite polarity on the second signal output (OUT−).

Abstract: The invention relates to an integrated circuit provided with a set of contacts for connecting the integrated circuit to a differential transmission line. The set of contacts comprises at least one first pair of contacts intended to receive a first power supply voltage, a second pair of contacts intended to receive a second power supply voltage and a third pair of contacts, referred to as signal contacts, intended to be connected to the transmission lines. Each power supply contact may indifferently receive ground or one of the high or low power supply voltages, realizing two possible power supply configurations, positive or negative. The signal contacts are surrounded by the power supply contacts so as to realize a specific shielding which is independent of the positive or negative power supply configuration.

Abstract: A power amplifier circuit includes an amplifying transistor and a dc bias circuit for biasing the amplifier transistor to obtain a conduction angle of at least about 180 °. The dc bias circuit includes a dynamic bias boosting circuit for increasing the dc bias current provided to the amplifying transistor by the dc bias current in direct proportion to an increase in the input signal provided to the power amplifier. An input to the dc bias circuit is coupled to a stage of the power amplifier circuit by a capacitor. The bias boosting circuit permits the power amplifier circuits to operate in Class B or Class AB with improved linearity, improved efficiency and reduced idle current.

Abstract: A filter (3) is described, which filter is provided with field effect (FET) capacitors (M1-32; M′1-32) arranged for controlling their respective capacity values, each such FET capacitor (M1-32; M′1-32) having a source (S) and a drain (D). The source (S) and the drain (D) of each FET capacitor (M1-32; M′1-32) are coupled to one another. The filter acting as an impedance transformer is a passive low power consuming and tunable filter, such as for a radio frequency (RF) receiver. It occupies only a very small area, while integrated on chip.

Abstract: A bi-directional flyback circuit includes a primary side switch that regulates the re-circulated energy to achieve substantially zero voltage switching (ZVS) and a secondary-side switch that regulates the output voltage. No feedback circuit between an output side and an input side of the bi-directional flyback circuit is needed for regulating the output voltage. The amount of recirculating energy required to achieve ZVS, and to maintain output regulation is kept substantially at a minimum.

Abstract: According to this invention, a side-emitting illumination device for uniformly distributing light is composed of an LED light source, a light-transmitting rod which permits total internal reflection, and outcoupling material affixed to an outer surface of the rod. Light enters the rod at one end and travels along the rod by total internal reflection. Light that hits the outcoupling material is angularly distributed based on the width of the outcoupling material.

Abstract: A low noise amplifier with switchable gain settings comprises a cascoded emitter coupled pair (T1, T2, T5, T6; T3, T4, T7, T8) having a current diverter (T9, T10) which reduces the gain to an intermediate level in response to a control signal on terminals (8, 9). Further control signals on terminals (5, 10, 11, 12, 13) reduce the gain to a low level by introducing emitter degeneration (R3). To compensate for the increase in input impedance caused by the introduction of emitter degeneration feedback loops (C1, R8; C2, R9) are connected between the diversion path and the amplifier inputs.

Abstract: A metal-oxide-semiconductor trench-gate semiconductor device in which a substantially intrinsic region (40) is provided below the gate trench (20), which extends from the base of the trench, substantially across the drain drift region (14) towards the drain contact region (14a), such that when the drain-source voltage falls during turn-on of the device its rate of decrease is higher. This reduces the switching losses of the device. The substantially intrinsic region (40) may, for example, be formed by implanting a region below the trench (20) with a damage implant.

Abstract: The invention relates to a method for modulating an output voltage of a transmitter circuit comprising a voltage controlled oscillator, a digital/analog converter and an antenna circuit, the method comprising the method comprising sending an output signal of sufficient power from the voltage controlled oscillator directly to the antenna circuit and directly modulating a frequency of the output signal of the voltage controlled oscillator. The invention furthermore relates to a transmitter circuit comprising a voltage controlled oscillator having a tank circuit, a digital/analog converter and an antenna circuit, wherein the voltage controlled oscillator is adapted to send an output signal of sufficient power directly to the antenna circuit and wherein the digital/analog converter is arranged to modulate an output frequency of the voltage controlled oscillator.

Abstract: A null-carry-lookahead adder is configured to generate and propagate a null-carry signal within and through blocks and groups of blocks within the adder. The null-carry signal terminates the effects of a carry input signal beyond the point at which the null-carry signal is generated. By forming rules for generating and propagating null-carry signals through blocks and groups of blocks within the adder, a maximum P-channel stack depth of two can be achieved for a four-bit adder block, thereby substantially improving the speed of the null-carry-lookahead adder, compared to a convention carry-lookahead adder that is based on generating and propagating carry signals within the adder.

Abstract: A localised reduced lifetime region (1,25,41) is provided in a semiconductor device formed substantially of silicon. A predetermined concentration of carbon is provided in the region, and then the body is heated to incorporate a lifetime controlling impurity substantially within the carbon region. It is believed that the association between the impurity ions (M+) and the carbon atoms (C) on silicon lattice sites produces C-M+ complexes with significant capture cross-sections. The carbon may be provided by addition during epitaxial growth of silicon material, during bulk growth of the silicon, or by implantation and/or diffusion.

Abstract: In a cellular power MOSFET or other semiconductor device, a wide connection across the perimeter of an active device area (120) is replaced with a plurality of narrower conducting fingers (111). The fingers (11) are used as follows in providing a doped edge region (15a) that is required below the connection (110). Dopant (150,151) is implanted at spaces (112) between and beside the fingers (111) and is diffused to form a single continuous region (15a) extending beneath the fingers (111) and at the spaces (112) therebetween. This doped edge region (15a) may be, for example, a deep guard ring in an edge termination of a power MOSFET, or an extension of its channel-accommodating region (15). A trench-gate network (11) of the MOSFET can be connected by the conducting fingers to a gate bond pad and/or field plate (114).

Abstract: A frame error rate of received frames is estimated. Received frames are error correction decoded. It is determined whether an error correction decoded frame is a good frame. A decoded good frame is error correction encoded. The frame error rate is estimated on the basis of the error corrected good frame and a received frame.

Abstract: A transmission lines arrangement comprising a first plurality of transmission lines each transmission line having an effective characteristic impedance. The arrangement further comprises a second plurality of transmission lines, said first plurality of transmission lines being coupled to a plurality of switching elements. The plurality of switching elements are conceived to redirect an input signal from one transmission line of the first plurality of transmission lines to at least one transmission line of the second plurality of transmission lines. The arrangement is characterized in that each of the switching elements of the plurality of switching elements have a relatively high input impedance in comparison with the effective characteristic impedance and a relatively high output impedance in comparison with the effective characteristic impedance.

Abstract: A field effect transistor has source 12, body 10 and drain 8 formed on an insulating layer 4. Implant regions 40 are implanted under the source 12, laterally aligned with the source 12 by implantation through opening in the source mask. The ruggedness of the transistor may thereby be improved without affecting the doping in channel region 19.

Abstract: The invention relates to a trench bipolar transistor structure, having a base 7, emitter 9 and collector 4, the latter being divided into a higher doped region 3 and a lower doped drift region 5. An insulated gate 11 is provided to deplete the drift region 5 when the transistor is switched off. The gate 11 and/or doping levels in the drift region 5 are arranged to provide a substantially uniform electric field in the drift region in this state, to minimise breakdown. In particular, the gate 11 may be seminsulating and a voltage applied along the gate between connections 21,23.

Abstract: The electronic device of the invention is such constructed that the antenna part (3) and the RF circuit part (4) can show their respective functions even after the antenna part (3) and the RF circuit part (4) have been separated. Besides a scribe line 6 is formed on a—preferably ceramic—substrate for separating the antenna part (3) from the RF circuit part (4). Both parts may be separated after a change in any environmental condition, such as a change in the circuit configuration of the board on which the device (10) is to be mounted.

Abstract: A current-compensating circuit provides compensation to a reference voltage such that the current through a diode-connected MOS transistor remains constant, regardless of threshold voltage. The compensating circuit includes another MOS transistor that is connected as a voltage follower in saturation. Variations in the component of the reference voltage that are produced by the effects of process variation on this other MOS transistor act to correct the current variations that these same process variations cause in the diode-connected MOS transistor.

Abstract: This device finds interesting applications in the field of interface circuits for optical fibers. There is proposed in this circuit to utilize a symmetrical amplifier (19) to which an automatic gain control circuit (27) is added which is insensitive to variations of the offset voltage of this amplifier. This control circuit (27) comprises peak detectors which give the best results in a circuit of this type intended for processing signals at very high frequencies.