Abstract: A capacitor structure with a generally L-shaped non-conductor having a horizontal portion and a vertical portion, the vertical portion defining a first opening formed therein; a generally U-shaped conductor formed within the first opening; and a generally L-shaped conductor formed exterior to the generally L-shaped non-conductor.

Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, producing excited molecules from the separate product, and monitoring the level of light emitted from the excited molecules as the target film is removed.

Abstract: An anticipation of engineering changes to a multiple-level integrated circuit package, resulting in a significant decrease in the turnaround time required to make engineering changes. After the first pass of the design phase is complete and before manufacture has begun, surplus I/O at different package levels are wired into surplus connections involving all but the highest package level. These surplus connections are reserved for future use when engineering changes become necessary. Once manufacture is complete, the surplus connections can be converted into logical connections by ECing only the highest packaging level with the quickest turnaround time. The surplus connections also provide a means for implementing ongoing incremental engineering changes as they are needed.

Abstract: A seamless micromechanical object is cast by forming a multilevel mold, filling the mold, and selectively removing the mold with respect to the micromechanical object. The mold can have a first level having a first opening therein, and a second level on the first level, the second level having a second opening therein, the second opening smaller than the first opening. The object may contain a controlled void, for example a micromechanical auger with a void formed therethrough to be used as a capillary to drain off fluids when the auger is in use.

Abstract: The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.

Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, and monitoring the level of the separate product as the target film is removed.

Abstract: In-situ identification of faulty electrical contacts in an electroprocessing fixture involves measuring resistance of contact pairs while the workpiece is mounted in the fixture, and calculating a resistance of an individual contact from the contact pair resistances. The individual contact resistances are compared with a maximum allowable resistance, and any contact having an individual resistance exceeding the maximum allowable resistance is identified as faulty. Faulty contacts are reseated, and then remeasured. The remeasuring can be of a subset of the whole set of contacts in the fixture.

Abstract: A semiconductor wafer carrier for holding a wafer is provided, where the wafer has edge portions and central portions. The carrier has a fixed permanent magnet having portions defining a cavity and a first coil slidably disposed within the cavity of the fixed permanent magnet. Also provided is a speaker cone having a conical portion and a diaphragm portion. The conical portion has a first end of a first diameter and a second end of a second diameter larger than the first diameter. The first end is fixed to the first coil. The diaphragm covers the second end and has edge portions constrained from movement and central portions free to deflect. A backing film is sealingly affixed to the diaphragm for isolating the speaker from the outside environment. Lastly, a wafer retaining means is provided for retaining the wafer against the backing film along its edge portions.

Abstract: A capacitor structure is provided, with a first conductor on top of a substrate, a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein, a non-conductive sidewall spacer formed in the first opening, the non-conductive sidewall spacer having a second opening formed therein, and a second conductor formed in the second opening.

Abstract: Device for in-situ collection of a gaseous reaction product from a polishing slurry as a workpiece, such as a semiconductor wafer, is being polished with the slurry, including a probe capable of being placed in contact with the slurry, the probe having a channel for transmitting the gaseous reaction product to an analyzer, a first hydrophobic membrane for allowing passage of the gaseous reaction product from the slurry to the channel, and means for directing a carrier gas through the channel.

Abstract: A chemical mechanical polishing process in a wafer is polished with slurry under selected operating conditions for a first time period that avoids overpolishing; and then polished with DI water under the selected operating conditions for a second time period until the surface of the wafer is substantially planar and dishing is minimized. The process can be used in conjunction with a damascene or dual-damascene process in which tungsten is polished with respect to BPSG.

Abstract: An adherent separator structure with a post projecting from a surface which may be a substrate, and a separator adhering to the post, the separator spaced a distance above the surface. A discontinuous film is then formed in a single process step having a first portion on the substrate and a second portion on the post, the discontinuity proximate to and caused by the separator. The structure is made into a stacked capacitor with the second (post) portion of the discontinuous film being the bottom electrode, by forming a continuous dielectric layer on the bottom electrode and a continuous top electrode layer on the dielectric layer.

Abstract: A system and method of measurement of emissivity and radiance of a wafer in a rapid thermal processing chamber enables determination of wafer temperature and control of temperature of the wafer. Mirrors enclose the chamber and reflect radiation from lamps within the chamber to heat the workpiece of interest. One or more viewing ports are provided in one of the mirrors to allow for the egress of radiant energy emitted by the wafer. The wavelength of the exiting radiation is selected by an optical filter having a passband which passes radiation at wavelengths emitted by the wafer while excluding radiation emitted by heating lamps. A chopper having surface regions differing in their reflectivity and transmissivity is positioned along an optical path of radiation propagating through the one or more ports, this resulting in a pulsation of detected radiation.

Abstract: A brushing system to be used in the manufacturing of electronic modules for removing unwanted particles from the substrate surface before the final encapsulation of the modules. The system provides an epicycloidal movement of the brush bristles on the substrate, which results in very effective in the removal of the particles. The system comprises a rotatable shaft with an eccentric bore. The hub of a rotatable brush can freely move inside the bore. When the shaft is rotated by a motor and the brush bristles are subject to friction, the brush describes an epicycloidal movement.

Abstract: A discontinuous film structure on a substrate, with an etch stop layer on the substrate, a separator layer with an opening formed therein on the etch stop layer and a discontinuous-as-deposited film on the separator layer, the discontinuity substantially in register with the opening. The structure is made into a stacked capacitor with the discontinuous film being the bottom electrode, by forming a continuous dielectric layer on the bottom electrode and a continuous top electrode layer on the dielectric layer.

Abstract: An integrated circuit wafer topography monitor is disclosed for sensing mis-processing in the fabrication of integrated circuits. In particular, the monitor senses unacceptable variations in layer planarity resulting from over polishing, over etching, scratches and mishandling. The topography monitor may be placed within the chip active area, the chip kerf area or in unutilized areas of the wafer such as a partial chip site. The monitor is formed when, first a conformal insulator is deposited over the topography of interest. Then, runs of wire are formed in the conformal insulator by a damascene or similar process. The wire runs are formed directly above the topography of interest. A puddle of metal is formed corresponding to any unacceptably non-planar topography. The puddle electrically couples the wires together. This effects a change in the metal runs which may be sensed as an electrical short or change in resistance.

Abstract: A semiconductor device comprises a semiconductor substrate of a first conductivity type, a first conductive layer formed in the semiconductor substrate using a dopant, and being of a second conductivity type, a silicon-rich nitride film formed on the first conductive layer, and a second conductive layer formed on the silicon-rich nitride film, wherein the silicon-rich nitride film inhibits outdiffusion of dopant from the first conductive layer into the second conductive layer, and blocks interdiffusion between the second conductive layer and the first conductive layer.

Abstract: A capacitor structure is provided, with a first conductor on top of a substrate, a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein, a non-conductive sidewall spacer formed in the first opening, the non-conductive sidewall spacer having a second opening formed therein, and a second conductor formed in the second opening.

Abstract: An on-line records identification system for users in a multiple-level hierarchy. The system provides a record origin identifier associated with each record, wherein a unique record origin identifier is assigned to each original record. Also provided is a relative identifier associated with each record of a single user at a single level of the hierarchy, wherein a unique relative identifier is assigned to each original record. Further provided are means for transmitting a record from a user at a first level of the hierarchy to a user at a second level of the hierarchy and means for translating the relative identifier associated with the record at the first level to a relative identifier associated with the record at the second level. The on-line records identification scheme is well-suited for a client-server architecture that has separate processing and storage capability at each level of the hierarchy.

Abstract: A method for forming an integrated circuit device, and the product thereby produced, are disclosed. The disclosed method includes the steps of obtaining a substrate with a patterned gate conductor and cap insulator, forming a dielectric masking layer having at least one opening, and, using the opening in the dielectric masking layer as a mask, forming a trench capacitor which is self-aligned to the cap insulator edge. The method is particularly useful for producing a DRAM device having a dense array region with self-aligned deep trench storage capacitors connected by buried straps.