Abstract: A fuse window structure and method for forming the same for a semiconductor device with a fuse and a cutting site on the fuse, the structure having (1) a first oxide region substantially in register with the cutting site, the first oxide region having a first thickness, (2) a second oxide region substantially in register with a first land generally surrounding the cutting site, the first land generally in register with the fuse, the second region having a second thickness, and (3) a third oxide region substantially in register with a second land generally surrounding the fuse, the third region having a third thickness different than the first thickness. Different fuse window structures are formed by using etch stops with different configurations, each configuration differing with regard to coverage of the three oxide regions.

Abstract: An overhanging separator structure with a post projecting from a surface which may be a substrate, an underlying layer on the surface, and a separator layer on the underlying layer, with the separator layer overhanging the underlying layer. A discontinuous film is then formed in a single process step having a first portion on the separator layer and a second portion on the post, the discontinuity caused by the overhanging separator layer. The structure is made into a stacked capacitor with the second (post) portion of the discontinuous film being the bottom electrode, by forming a continuous dielectric layer on the bottom electrode and a continuous top electrode layer on the dielectric layer.

Abstract: A film layer not susceptible to aerosol cleaning is removed from a surface by converting the film layer into a film susceptible to aerosol cleaning, and aerosol jet cleaning the converted film and any contaminants. The aerosol jet can be moved in relation to the surface to provide thorough cleaning.

Abstract: A container for storing and transporting fragile objects, comprising a pair of side walls, a top wall, a bottom wall, and a back wall, forming a box with one open side; a plurality of spaced apart partitions between the side walls for separating the objects; and means to maintain the objects in an angled orientation during storage and transport so that the objects rest against the partitions and do not easily move.

Abstract: An apparatus for rotary signal coupling in in-situ monitoring of a chemical-mechanical polishing process by a polisher is provided with a sensor fixed to a rotatable wafer carrier for creating a signal responsive to the chemical mechanical polishing process, a conductor coupled to the sensor for receiving the signal, the conductor fixed to the rotatable wafer carrier, a contact coupled to the conductor, the contact fixed to a stationary drive arm, and signal transfer means coupled to the contact for transferring the signal to a monitoring means.

Abstract: A body is provided with a substantially horizontal surface and a substantially vertical surface. A film is formed on the body with a substantially horizontal portion on the substantially horizontal surface, a substantially vertical portion on the substantially vertical surface, and a corner region joining the substantially horizontal and substantially vertical portions. The corner region and the substantially vertical portion of the film are removed while the body and the substantially horizontal portion of the film are left substantially intact. A high density plasma with a fluorocarbon-based etching gas may be used to remove the vertical portion and corner region.

Abstract: A contact for a semiconductor device is provided by depositing a layer of palladium on a silicon substrate, causing the palladium to react with the substrate for forming palladium silicide, removing unreacted palladium from the substrate, forming doped silicon on the palladium silicide and substrate, causing the silicon to be transported through the palladium silicide for recrystallizing on the substrate for forming epitaxially recrystallized silicon regions on the substrate and lifting the palladium silicide above the epitaxially recrystallized silicon regions for forming a silicided contact therefor, and removing the doped silicon from the substrate.

Abstract: A borderless contact method for a semiconductor device is disclosed employing a disposable etch stopping spacer to protect the upper edges of adjacent structure during contact hole etching. An exemplary FET gate structure is formed on a substrate adjacent to a source or drain diffusion region. A layer of dielectric material is deposited over the structure including the gate stack. An etch stopping spacer, of a material selectively etchable relative to the dielectric material is placed upon the sidewalls and the upper edges of the gate stack.The resulting structure is blanketed with a glass layer which is selectively masked and etched to provide a hole for making a borderless contact to the substrate adjacent to the gate stack. The spacer itself can be etched away prior to filling the hole with contact material in order to maximize the contact area.

Abstract: A method for resizing the macro cells' boundaries of an integrated chip is disclosed and that becomes effectual after the initial floorplanning process has been completed. The method of the present invention apportions any excess area that is freed-up after the initial floorplanning process by altering the sizes or dimensions of the macro cell within the hierarchy of the integrated circuit in such a manner that the fractional change in the percentage occupancy is substantially constant among all macro cells at all hierarchy levels.

Abstract: The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.

Abstract: A capacitor structure with a generally L-shaped non-conductor having a horizontal portion and a vertical portion, the vertical portion defining a first opening formed therein; a generally U-shaped conductor formed within the first opening; and a generally L-shaped conductor formed exterior to the generally L-shaped non-conductor.

Abstract: Rotary signal coupling in in-situ monitoring of a chemical-mechanical polishing process. A sensor fixed to a rotatable wafer carrier for creating a signal responsive to the chemical mechanical polishing process is coupled to a bottom half of a rotary transformer fixed to a rotating portion of the polisher. A top half of the rotary transformer, coupled to the bottom half of the rotary transformer, is fixed to a stationary portion of the polisher. The signal from the sensor is thus coupled through the rotary transformer to a process monitor.

Abstract: The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.

Abstract: A method and apparatus are provided for determining the endpoint for chemical mechanical polishing a film on a wafer. First, a reference point polishing time indicating when a breakthrough of the film has occurred is determined, then an overpolishing time indicating an interval between the reference point polishing time and when the film has been completely polished is determined. To get the total polishing time to the endpoint, the reference point polishing time and the overpolishing time are added.

Abstract: A method and apparatus for endpoint detection in removal of a film from a semiconductor wafer is provided, with a sensor for creating a signal responsive to the film removal process, a positive feedback amplifier coupled to the sensor, the positive feedback amplifier having a mode selector, and an analyzer coupled to the positive feedback amplifier.

Abstract: A reactor is provided for heating a workpiece in a sealed environment. The reactor has a chamber with a gas inlet port, a gas outlet port, and at least one tube for receiving a heat source. The tube passes from outside the chamber into the inside of the chamber without breaking the chamber seal. Alternately, the tubes may be used for treating the workpiece with light, in combination with or instead of heat treatment.

Abstract: In any of the post-global physical design phases an integrated circuit chip is wired in parallel. The chip is first divided into adjacent bays with rough wiring coordinates from the global wiring phase. Next the bays are grouped into bay groups, with each bay group containing a contiguous group of non-edge bays as well as edge bays which are adjacent another bay group. Each bay group is assigned to a wiring task on a processor, so that the wiring of the bay groups is performed in parallel, using the rough coordinates from the global wiring phase. The wiring tasks are coordinated regarding edge bays in order to achieve wiring consistency between bay groups.

Abstract: A method for measuring electrical characteristics of an electrical device having a conductive structure associated therewith involves the sequence of steps as follows: First, employ a low energy electron beam to charge all conductors on the surface of the device. Expose individual conductors to a focussed low energy electron beam serially. Make measurements of an induced current signal when individual conductors are exposed to the focussed electron beam. Analyze induced current measurements derived from the individual conductors. Then determine electrical characteristics of the device based on the analysis. A charge storage method and three capacitive test methods for defect detection and methods for shorts delineation are described.

Abstract: A composite polishing pad is provided, with a supporting layer, nodes attached to the supporting layer, and an upper layer attached to the supporting layer which surrounds but does not cover the nodes. The support layer, nodes, and upper layer may all be of different hardnesses.

Abstract: An isolated sidewall capacitor with dual dielectric, which includes two capacitors. The first capacitor includes a first conductor on top of a substrate, a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein, a non-conductive sidewall spacer formed in the first opening, the non-conductive sidewall spacer having a second opening formed therein, and a second conductor formed in the second opening. The second capacitor includes the second conductor, a first non-conductor disposed over the top portion of the second conductor, a third conductor disposed over the first non-conductor, and the third conductor electrically connected to the first conductor. A second non-conductor isolates the first conductor from the second conductor.