Abstract: A method of forming a via structure is provided. In the method, a dielectric layer is formed on an anti-reflective coating (ARC) layer covering a first metal layer; and a transition metal layer is formed on the dielectric layer. An ultra-thin photoresist layer is formed on the transition metal layer, and the ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern for a via. The patterned ultra-thin photoresist layer is used as a mask during a first etch step to transfer the via pattern to the transition metal layer. The first etch step includes an etch chemistry that is selective to the transition metal layer over the ultra-thin photoresist layer and the dielectric layer. The transition metal layer is employed as a hard mask during a second etch step to form a contact hole corresponding to the via pattern by etching portions of the dielectric layer.

Abstract: An SOI transistor structure and SOI circuit is disclosed. The SOI transistor structure includes a conductive base layer and an insulating layer overlying the conductive base layer. A semiconductor layer overlies the insulating layer and includes a source region and a drain region therein with a channel region disposed therebetween. A conductive gate region overlies generally the channel region of the semiconductor layer. The SOI circuit includes a conductive base layer and an insulating layer overlying the conductive base layer. A semiconductor layer overlies the insulating layer. A first circuit structure and a second circuit structure are formed in a first region and second region of the semiconductor layer, respectively. A conductive contact region extends through the insulating layer and electrically connects at least one of the first circuit structure and the second circuit structure to the conductive base layer.

Abstract: An implant (10) includes an expandable, flexible membrane (18) mounted over an expandable stent (12), which is releasably affixed to the balloon portion (14) of a catheter (16). The balloon (14) is inflated, thereby enlarging both the stent (12) and the membrane (18). Thereafter, the balloon (14) is deflated and the catheter (16) removed, leaving the stent (12) and membrane (18) in place. The implant (100) may also include an outer stent (106), surrounding a secured membrane (104).

Abstract: A method (100) and a system (150) for detecting defects in a dielectric material (112) includes the steps of moving carriers (102) in the dielectric material (112), wherein the number of carriers is a function of whether defects exist in the dielectric material (112). The carriers are then deflected (130) toward a surface (116) of the dielectric material (112) using, for example, a magnetic field (132), and form an accumulated charge profile on the surface (116) of the dielectric material (112). The charge profile is then detected (140) and used to determine (180) the location of defects within the dielectric material (112).

Abstract: A lithographic process for fabricating sub-micron features is provided. A silicon containing ultra-thin photoresist is formed on an underlayer surface to be etched. The ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern. The ultra-thin photoresist is oxidized so as to convert the silicon therein to silicon dioxide. The oxidized ultra-thin photoresist layer is used as a hard mask during an etch step to transfer the pattern to the underlayer. The etch step includes an etch chemistry that is highly selective to the underlayer over the oxidized ultra-thin photoresist layer.

Abstract: In one embodiment, the present invention relates to a method of processing a semiconductor structure including a resist thereon, involving the steps of exposing the semiconductor structure including the resist to actinic radiation; contacting the semiconductor structure including the exposed resist with a solution comprising water and from about 0.01% to about 5% by weight of a surfactant; and developing the resist with a developer.

Abstract: A system for acquiring shopping list information includes a user terminal and a base unit in selective data communication via a wide-area network, such as the global Internet, common data carrier or a modulated wave propagating over a public utility. The user terminal includes a bar code scanner for getting Uniform Product Code information from a product container or from a manufacturer's coupon. The user compiles, via the user terminal, a shopping list database by scanning previously obtained products, manufacturers coupons, or using direct user input via an interface such as a keyboard or mouse. Once compiled, the database is selectively transmitted to a base unit situated at a retailer via the wide-area network.

Abstract: A method of forming a via structure is provided. In the method, a dielectric layer is formed on an anti-reflective coating (ARC) layer covering a first metal layer; and a nitride layer is formed on the dielectric layer. An ultra-thin photoresist layer is formed on the nitride layer, and the ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern for a via. The patterned ultra-thin photoresist layer is used as a mask during a first etch step to transfer the via pattern to the nitride layer. The first etch step includes an etch chemistry that is selective to the nitride layer over the ultra-thin photoresist layer and the dielectric layer. The nitride layer is employed as a hard mask during a second etch step to form a contact hole corresponding to the via pattern by etching portions of the dielectric layer.

Abstract: A drug discovery research system which includes a plurality of computers. The drug discovery research system provides for at least one of the plurality of computers to run a multi-platform object oriented programming language, and at least one of the plurality of computers to store drug discovery related data. The system has a network architecture interconnecting the plurality of computers. The network architecture allows objects to transparently communicate with each other. The drug discovery research system provides for integrating and organizing data to facilitate drug discovery research.

Abstract: A portable evaporative cooling system includes a liquid storage tank, a pump coupled to the tank and a power source coupled to the pump. In addition, the system includes one or more nozzles coupled to the pump for converting a liquid to a relatively fine mist. The pump pumps the liquid from the tank to the one or more nozzles in a substantially non-pulsating manner, thereby providing a substantially continuous misting.

Abstract: A method (400) of determining a custom illumination scheme for a projection-type photolithography system (500) is disclosed. The custom illumination scheme provides compensation for imaging system aberrations within the photolithography system (500) and thereby reduces critical dimension non-uniformities of features produced by the photolithography system (500) across a substrate (120). The method (400) includes the steps of performing a lithography simulation (404) for one or more nominal features using imaging system aberration data which characterizes the photolithography system (500) and an initial illumination scheme. The lithography simulation includes one or more simulated features which differ from the one or more nominal features due to the imaging system aberration data.

Abstract: A method for fabricating a first memory cell and a second memory cell electrically isolated from each other is provided. A first polysilicon (poly I) layer is formed on an oxide coated substrate. Then, a sacrificial oxide layer and nitride layer are formed for masking the poly I layer. At least a portion of the masking layer is etched to pattern the first memory cell and the second memory cell and an unmasked portion therebetween. The unmasked portion of the poly I layer is transformed into an insulator via thermal oxidation such that the insulator separates a floating gate of the first memory cell from a floating gate of the second memory cell. The insulator is etched so as to form a gap having gradually sloping sidewalls between a floating gate of the first memory cell and a floating gate of the second memory cell, the gap isolating the floating gate of the first memory cell from the floating gate of the second memory cell.

Abstract: A multi-position ladder includes a ladder, a longitudinally extending support member for supporting the ladder, and a connecting member connecting the support member and the ladder. The connecting member includes a sliding bar, a pivot bar, and a rotating arm, the sliding bar being in sliding engagement with the support member for permitting lateral shifting movement of the ladder along the support member to one of multiple generally vertical use positions, the pivot bar extending laterally outwardly from the sliding bar for permitting pivotable movement of the ladder about the pivot bar between a generally vertical use position and one of multiple storage positions, and the rotating arm providing tilting movement of the ladder towards or away from a wall to which the support member is attached. The ends of the rotating arm are slidably received in elongated slots in the uprights of the ladder for permitting sliding movement of the ladder relative to the rotating arm.

Abstract: A method for fabricating a MOSFET device is provided. The method includes a step of forming a gate oxide including first and second gate oxide materials. The first gate oxide material has a higher dielectric constant than the second gate oxide material. The first gate oxide material is formed to be over source/drain extension regions of the device; and the second gate oxide material is formed over a channel region of the device. The first gate oxide material has a low dielectric constant and provides for mitigating gate fringing field effects. The second gate oxide material has a high dielectric constant and provides for forming a thick gate oxide over a channel region of the device. Controlled uniform growth of the second gate oxide material is facilitated because of the thickness thereof.

Abstract: A pericardial strip and surgical stapler assembly, and method of use thereof, in which at least one pericardial strip is releasably attached to the jaws of the stapler by passing the outer ends of the stapler through holes in the strip(s). Preferably, the trailing end(s) of the strip(s) are secured to the proximal ends of the jaws by O-ring(s), suture(s) attached to the trailing end of the strip(s), or opening(s) in the strip(s). When the tissue is cut, the O-ring(s), suture(s), or opening(s) are also cut, thus permitting removal of the stapler and allowing at least a portion of the pericardial strips to remain.

Abstract: A system for regulating reticle temperature is provided. The system includes a reticle for use in a lithographic process and a chuck assembly for supporting the reticle. The chuck assembly includes: a backplate having front and back surfaces, the front surface engaging with a backside of the reticle; and a thermoelectric cooling system operatively coupled to the backplate for regulating temperature of at least a portion of the reticle via heat conduction through the backplate. The chuck assembly also includes a temperature sensing system coupled to the backplate for sensing temperature of at least a portion of the reticle via heat conduction through the backplate; and a heat sink operatively coupled to the thermoelectric cooling system. A voltage driver operatively is coupled to the thermoelectric cooling system, the voltage driver provides a bias voltage to drive the thermoelectric cooling system.

Abstract: A method for fabricating a vertical parallel plate capacitor is provided. In the method, a sacrificial layer is formed on at least a portion of a surface. A dielectric layer is conformally formed on the sacrificial layer and an exposed portion of the surface. The dielectric layer is etched so as to leave substantially only a fence of dielectric material along a sidewall of the sacrificial layer. The sacrificial layer is removed, and a conductive layer is deposited on the fence and surface. The conductive layer is etched and planarized so as to form a first capacitor plate along one side of the fence, and a second capacitor plate along the other side of the fence, the first and second capacitor plates being substantially parallel to each other, and transverse sections of the capacitor plates including elongated portions substantially normal to the surface.

Abstract: An extra-anatomic heart valve apparatus, which may be mounted externally to the heart, includes a heart valve positioned within a generally tubular conduit. An elongated outflow conduit extends from the tubular conduit and terminates in an end spaced from the heart valve. A resilient support and/or corrugations may be added to the outflow conduit to help resist compression of the conduit as well as to facilitate bending thereof.

Abstract: A method for fabricating a MOSFET device is provided. The method includes a step of fining a gate oxide including first and second gate oxide materials. The first gate oxide material has a higher dielectric constant than the second gate oxide material. The first gate oxide material is formed to be over source/drain extension regions of the device; and the second gate oxide material is formed over a channel region of the device. The first gate oxide material has a low dielectric constant and provides for mitigating gate fringing field effects. The second gate oxide material has a high dielectric constant and provides for forming a thick gate oxide over a channel region of the device. Controlled uniform growth of the second gate oxide material is facilitated because of the thickness thereof.

Abstract: A multi-position ladder includes a ladder, a longitudinally extending support member for supporting the ladder, and a connecting member connecting the support member and the ladder. The connecting member includes a sliding bar, a pivot bar, and a rotating arm, the sliding bar being in sliding engagement with the support member for permitting lateral shifting movement of the ladder along the support member to one of multiple generally vertical use positions, the pivot bar extending laterally outwardly from the sliding bar for permitting pivotable movement of the ladder about the pivot bar between a generally vertical use position and one of multiple storage positions, and the rotating arm providing tilting movement of the ladder towards or away from a wall to which the support member is attached.