Abstract: A method of forming a NAND-type flash memory device (200) includes forming a stacked gate flash memory structure (346) for one or more flash memory cells in a core region (305) and forming a transistor structure having a first gate oxide (336) and a gate conductor (338) for both a select gate transistor (344) in the core region (305) and a low voltage transistor (342) in a periphery region (328). In addition, a NAND-type flash memory device (200) includes a core region (305) comprising a stacked gate flash memory cell structure (346) and a select gate transistor (344) and a periphery region (328, 332) comprising a low voltage transistor (342) and a high voltage transistor (350), wherein a structure of the select gate transistor (344) and the low voltage transistor (342) are substantially the same.

Abstract: A system for detecting defects in an interlayer dielectric (ILD) interposed between two conductive lines is provided. The system includes a processor for controlling general operations of the system. The system also includes a voltage source adapted to apply a bias voltage between the two conductive lines and induce a leakage current across the ILD. The system employs a light source to illuminate at least a portion of the ILD and enhance the leakage current. A current source is used to measure the induced leakage current, the current source being operatively coupled to the processor. The processor determines the existence of a defect in the ILD based on the measured leakage current.

Abstract: A reworkable EUV mask (100) includes a substrate (40), a reflective layer (42) overlying the substrate (40), and a buffer layer (44) overlying the reflective layer (42). An absorbing layer (102) composed of primarily a non-heavy metal material overlies the buffer layer (44) for absorbing radiation which is incident thereon. The absorbing layer (102) exhibits a substantially high etch selectivity with respect to the reflective layer (42) and thus is easily removed without substantially impacting the reflectivity of the reflective layer (42) during rework.

Abstract: A mask (50) for use in lithographic printing includes a pattern (54) formed of a material which is substantially opaque with respect to a wavelength of radiation being used in the lithographic printing. The pattern (54) on the mask (50) corresponds to a desired feature to be formed on a substrate and includes a grating (58) having an alternating pattern of opaque and transparent regions (60, 62). The alternating pattern provides destructive interference of radiation at the substrate in a region corresponding to the desired feature due to diffraction, thereby improving resolution at the substrate. In addition, the alternating pattern (60, 62) on the mask (50) increases a number of focal planes at which the destructive interference occurs and thereby improves a focus process latitude by providing an acceptable resolution over variations in a distance between the mask (50) and the substrate.

Abstract: A method of making a lightly doped drain transistor includes the steps of forming a gate electrode (52) and a gate oxide (54) over a semiconductor substrate (56) and forming a drain (70) in a drain region (58) and a source (72) in a source region (60) of the substrate (56). The method further includes generating interstitials (62) near a lateral edge of at least one of the drain (70) and the source (72) and thermally treating the substrate (56). The thermal treatment cause the interstitials (62) to enhance a lateral diffusion (84) of the drain (70) under the gate oxide (54) without substantially impacting a vertical diffusion (82) of the drain (70) or the source (72). The enhanced lateral diffusion (84) results in the formation of at least one of a lightly doped drain extension region (75) and a lightly doped source extension region (76) without an increase in a junction depth of the drain (70) or the source (72).

Abstract: A peripheral device operatively coupleable to a computing system which includes a processor for processing various functions relating to the operation of the peripheral device. The peripheral device also including a memory operatively coupleable to the processor, the memory storing a device driver which the computing system employs to communicate with the peripheral device.

Abstract: An automated vehicle return system wherein status information of a rented vehicle is automatically tracked during the rental period and is transmitted to a selected destination computer upon driving the vehicle into a return area. Electronic vehicle monitoring circuitry is tied to existing components within the vehicle to keep track of the status of the vehicle during the rental period. The status information includes, miles driven, fuel level, pick up time, drop off time, wear and tear on the vehicle, etc. The status information is used by the destination computer to generate a bill for the rented vehicle.