Abstract: A circuit and method are disclosed for reducing soft errors in dynamic memory devices using error checking and correcting. In an exemplary embodiment, a memory device includes a dual port memory having a first port for externally-initiated memory access operations and a second port for handling memory access operations associated with error checking and error correction operations. An error module, coupled to the second port of the dual port memory, performs an error checking operation on words read from the dual port memory. An error controller, coupled to the error module, controls the error module to perform error check operations on each word sequentially read from the dual port memory through the second port thereof. The error checking is performed substantially in parallel with externally-initiated memory access operations performed using the first port of the dual port memory.

Abstract: An integrated circuit and method for providing a switchover from the primary power source to the secondary power source to prevent a volatile element from losing stored data. The integrated circuit includes a forced power source switchover circuit for detecting that the supply level of the primary power source drops below a predefined threshold level. A switchover circuit on the integrated circuit initiates a switchover operation based upon the forced power source switchover circuit detecting that the supply level being received from the primary power source drops below the predefined threshold level. The detection by the forced power source switchover circuitry may occur on a signal level that transitions faster than a predetermined negative rate of change. The integrated circuit may be incorporated in any system having volatile elements, such as memory or a clock.

Abstract: A memory device having a first and a second memory section, the first and the second memory sections being coupled to bit lines. The second memory section may include at least one fuse. The first memory section includes a volatile memory and the second memory section includes a non-volatile memory. The volatile memory may be static or dynamic random access memory. The memory device may further include a control circuit connected to the at least one fuse to provide for prelaser testing.

Abstract: A method and circuit are disclosed for mirroring current. The circuit includes a reference branch through which a first current flows, and at least one mirror branch through which a second current flows that is proportional to the first current. The circuit further includes a current amplifier having an input coupled, via a capacitor, to the reference branch and an output coupled to one of the reference branch and the at least one mirror branch. The current amplifier provides, at relatively high frequencies, a current to the circuit that substantially compensates for current passing through a parasitic capacitance appearing in the circuit.

Abstract: A sense amplifier for use in memory devices. The sense amplifier may include a pair of cross-coupled inverters, each inverter including at least two transistors. The sense amplifier may further include a first capacitor coupled to a first input/output terminal of the sense amplifier and a second capacitor coupled to a second input/output terminal thereof. A change in voltage differential appearing across the input/output terminals bootstraps the cross-coupled inverters to facilitate activation and deactivation of the transistors in the cross-coupled inverters. Consequently, response time of the sense amplifier is reduced.

Abstract: A test circuit and method are disclosed for testing memory cells of a ferroelectric memory device having an array of ferroelectric memory cells. The test circuitry is coupled to the bit lines, for selectively determining the voltage levels appearing on the bit lines based on a measured current level and providing externally to the ferroelectric memory device an electrical signal representative of the sensed voltage levels. In this way, ferroelectric memory cells exhibiting degraded performance may be identified.

Abstract: A circuit and method are disclosed for monitoring the voltage level of an unregulated power supply. The circuit includes a voltage reference circuit for generating a first reference voltage signal and a trim circuit which generates a trimmed reference voltage signal based upon the first reference voltage signal. A comparator compares the unregulated power supply voltage to the trimmed reference voltage signal and asserts an output signal based upon the comparison. The output signal is fed back as an input to the trim circuit so that the trim circuit provides a hysteresis effect.

Abstract: A redundancy circuit and method are disclosed for replacing at least one defective memory cell in a memory device. The redundancy circuit may include redundant decode circuitry for selectively maintaining an address of a defective memory cell in the memory device, receiving the input address and generating an output signal having a value indicative of whether the input address corresponds to the address of the defective memory cell. The redundancy circuit may further include a plurality of redundant storage circuits for selectively maintaining data values, and redundant control circuitry for selectively and individually accessing a first of the redundant storage circuits based upon the value of the output signal of the redundant decode circuitry.

Abstract: A circuit is disclosed for monitoring a reference voltage generated in a semiconductor memory device to facilitate a memory access operation. The circuit utilizes a pair of Schmitt trigger circuits. A first of the Schmitt trigger circuits detects the voltage appearing on the output of a reference voltage generator falling below a minimum threshold voltage level. A second of the Schmitt trigger circuits detects the output voltage of the reference voltage generator exceeding a maximum threshold voltage level. The circuit may further include reset circuitry for initially placing predetermined voltage levels on the inputs of the Schmitt trigger circuits. An output circuit receives the output of each Schmitt trigger circuit and generates an output signal having a value indicative of whether the output of the reference voltage generator is not within an acceptable voltage range.

Abstract: Reference generator circuitry for providing a reference to sense amplifiers in a flash memory device. The circuitry includes a reference current generator for generating a reference current for use by the sense amplifier circuits. A current buffer circuit in the flash memory device mirrors the reference current and applies a plurality of mirrored reference currents to the reference inputs of the sense amplifiers. A startup circuit is utilized in order to provide a fast settling time of the reference node appearing at the input of the sense amplifiers. The startup circuit includes first and second discharge current stages, with the first discharge current stage discharging the charge appearing at the reference node input of the sense amplifiers based upon a bandgap reference current. The second discharge current stage discharging the charge appearing at the reference node input of the sense amplifiers based upon the reference current.

Abstract: A method and circuit are disclosed for measuring temperature. An exemplary embodiment of the present invention includes a first oscillator circuit that generates a first signal having a frequency that is dependent upon a sensed temperature. Difference circuitry determines a difference in frequency between the first signal and the second signal having a frequency that is substantially independent of temperature, and generates a difference signal having a number of pulses thereon based upon the difference. A counter circuit is responsive to the difference circuitry for offsetting a predetermined temperature level based upon the pulses appearing on the difference signal, to obtain an output signal indicative of the sensed temperature.

Abstract: A method and apparatus for disabling the scan output of flip-flops contained within an integrated circuit. Registers within the integrated circuit form a serial shift register chain when in the test mode of operation. The registers contain therein flip-flops, each of the flip-flops having at least one data input, a scan test input, a data output, and a scan output. The flip-flop is capable of storing either the signal appearing on the at least one data input or the signal appearing on the scan test input, based on the mode of operation of the flip-flop. The flip-flop includes a circuit coupled between the data output and the scan output for selectively disabling the scan output from following the value of the data output. Consequently, the scan output is enabled to output the logic value stored in the flip-flop when the flip-flop is in the test mode of operation and is disabled from outputting the logic value stored in the flip-flop when the flip-flop is in the normal mode of operation.

Abstract: The present invention relates to a system and method for accelerating graphics. The system includes a memory device for accelerating graphics operations within an electronic device. A memory controller is used for controlling pixel data transmitted to and from the memory device. A cache memory is electrically coupled to the memory and is dynamically configurable to a selected usable size to exchange an amount of pixel data having the selected usable size with the memory controller. The memory device may be an SDRAM. The cache memory may also comprise a plurality of usable memory areas or tiles.

Abstract: A sense amplifier circuit and method are disclosed for nonvolatile memory devices, such as flash memory devices. The sense amplifier circuit includes a current source that is configurable to source any of at least two nonzero current levels in the sense amplifier circuit. The sense amplifier circuit is controlled by control circuitry in the nonvolatile memory device so that each sense amplifier circuit sources a first current level during the precharge cycle of a memory read operation, and a second current level, greater than the first current level, during the memory cell sense operation. In this way, the sense amplifier circuit consumes less power during the memory read operation without an appreciable loss in performance.

Abstract: A method and apparatus are disclosed for controlling the operation of a multiphase motor, and particular to spinning the motor from an inactive state to an operable state. The method and apparatus include initially sensing an electrical characteristic of one or more phase windings, such as performing an inductive sense operation. Having sensed values of the electrical characteristic, a determination is made as to whether or not the motor's rotor is spinning. Upon a determination that the rotor is not spinning, a spin-up operation is performed to bring the spin of the rotor to operable spin speeds. On the other hand, upon a determination that the rotor is spinning, a resynchronization operation is performed to synchronize the application of drive signals for the phase windings of the motor to the dynamic position of the rotor.

Abstract: An iterative method and system are disclosed for locating errors in interleaved code words. The system and method generate column parity check symbols using symbols from selected columns in the interleaved code words. The width of each column parity check symbol is reduced, followed by the reduced column parity check symbols being merged to create merged column check symbols. A Reed-Solomon encoding algorithm is performed on the merged column check symbols to generate error locating check symbols which are combined with the reduced column parity check symbols to create an error locating code word. The error locating check symbols are stored with the interleaved code words in memory. Following retrieval from memory, the error locating code word is reconstructed and decoded upon the detection of at least one uncorrectable interleaved code word from decoding the interleaved code words.

Abstract: An integrated circuit chip includes an RC oscillator circuit. The frequency of the output signal generated by the oscillator output signal is set as a function of a value of an included internal resistor integrated on the chip. An external resistor may be connected to the chip to allow a user to manipulate the oscillator output signal frequency. A detection circuit on the chip detects the presence of the connected external resistor. Responsive to that detection, a substitution circuit operates to substitute the connected external resistor for the internal resistor in the RC oscillator circuit. This effectuates a change of the frequency of the oscillator output signal to instead be set as a function of a value of that connected external resistor.

Abstract: A disk drive having a motor and a velocity control loop, which includes a frequency detector and a filter. The filter includes a filter section and an accumulator. The filter is programmable in that filter coefficient(s) are dynamically received by the filter section. One embodiment of the filter section is an infinite impulse response filter. One embodiment of the filter is a digital integrated circuit. A method for compensating a control loop by infinite impulse response filtering and accumulating. The control loop may be a position, velocity, acceleration or force control loop. A programmable digital integrated circuit for compensating a velocity control loop having a filter section cascaded with an accumulator. The integrated circuit may include memory for storing filter coefficient(s) for the filter section, thereby not requiring external components.

Abstract: An integrated circuit includes storage circuits comprising isolation transistors to which a certain bias voltage may be applied. The bias voltage is generated by a bias voltage generator. A boost circuit responds to initial bias voltage transition by generating a boost current that is applied to the isolation transistors with the transitioning bias voltage.

Abstract: A system and method are disclosed for providing error correction coding having a selectively variable degree of redundancy. The system and method include generating extended check symbols by performing a Reed-Solomon operation on unused check symbols that do not form a portion of an interleaved code word. An extended check symbol is generated from the unused check symbols appearing in a column of the unused check symbols. The extended check symbols are stored with the interleaved code words in a data storage device. The extended check symbols are retrieved from the data storage device with the corresponding interleaved code words. Following the decoding of the interleaved code words and the identification of uncorrectable errors therein, the extended check symbols are decoded to recover the corresponding unused check symbols for the previously uncorrectable interleaved code words.