Abstract: Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output.

Abstract: Computer-implemented methods for inspecting and/or classifying a wafer are provided. One computer-implemented includes detecting defects on a wafer using one or more defect detection parameters, which are determined based on a non-spatially localized characteristic of the wafer that is determined using output responsive to light scattered from the wafer generated by an inspection system. Another computer-implemented method includes classifying a wafer based on a combination of a non-spatially localized characteristic of the wafer determined using output responsive to light scattered from the wafer generated by an inspection system and a spatially localized characteristic of the wafer determined using the output.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Abstract: Computer-implemented methods and systems for detecting defects in a reticle design pattern are provided. One computer-implemented method includes acquiring images of the reticle design pattern using a sensor disposed on a substrate arranged proximate to an image plane of an exposure system configured to perform a wafer printing process using the reticle design pattern. The images illustrate how the reticle design pattern will be projected on a wafer by the exposure system at different values of one or more parameters of the wafer printing process. The method also includes detecting defects in the reticle design pattern based on a comparison of two or more of the images corresponding to two or more of the different values.

Abstract: Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer are provided. One computer-implemented method for generating a standard reference die for use in a die to standard reference die inspection includes acquiring output of an inspection system for a centrally located die on a wafer and one or more dies located on the wafer. The method also includes combining the output for the centrally located die and the one or more dies based on within die positions of the output. In addition, the method includes generating the standard reference die based on results of the combining step.

Abstract: Methods and systems for classifying defects detected on a reticle are provided. One method includes determining an impact that a defect detected on a reticle will have on the performance of a device being fabricated on a wafer based on how at least a portion of the reticle prints or will print on the wafer. The defect is located in the portion of the reticle. The method also includes assigning a classification to the defect based on the impact.

Abstract: Various methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions are provided. One computer-implemented method includes using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions. The one or more defect-related functions include one or more post-mask, defect-related functions.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.

Abstract: Various methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers are provided. One method for creating a dynamic sampling scheme for a process during which measurements are performed on wafers includes performing the measurements on all of the wafers in at least one lot at all measurement spots on the wafers. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process based on results of the measurements. The thresholds correspond to values of the measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme are to be used for the process.

Abstract: Methods and systems for providing illumination of a specimen for inspection are provided. One embodiment relates to a system configured to provide illumination of a specimen for inspection. The system includes an electrodeless lamp configured to generate light. The system is further configured such that the light illuminates the specimen during the inspection. Another embodiment relates to a system configured to inspect a specimen. The system includes an electrodeless lamp configured to generate light and one or more optical elements configured to direct the light to the specimen. The system also includes a detection subsystem configured to generate output responsive to light from the specimen. The output can be used to detect defects on the specimen. An additional embodiment relates to a method for providing illumination of a specimen for inspection. The method includes illuminating the specimen during the inspection with light generated by an electrodeless lamp.

Abstract: Various computer-implemented methods are provided. One method for generating a process for inspecting reticle layout data includes identifying a first region in the reticle layout data. A printability of the first region is more sensitive to changes in process parameters than a printability of a second region in the reticle layout data. The method also includes assigning one or more inspection parameters to the first region and the second region such that the first region will be inspected during the process with a higher sensitivity than the second region. Another method includes inspecting the first region with a higher sensitivity than the second region. An additional method includes simulating how the reticle layout data will print. Simulation of the first and second regions is performed with one or more different simulation parameters such that the first region is simulated with a higher fidelity than the second region.

Abstract: Various methods and systems for determining a defect criticality index (DCI) for defects on wafers are provided. One computer-implemented method includes determining critical area information for a portion of a design for a wafer surrounding a defect detected on the wafer by an inspection system based on a location of the defect reported by the inspection system and a size of the defect reported by the inspection system. The method also includes determining a DCI for the defect based on the critical area information, a location of the defect with respect to the critical area information, and the reported size of the defect.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: Various systems and methods for creating persistent data for a wafer and using persistent data for inspection-related functions are provided. One system includes a set of processor nodes coupled to a detector of an inspection system. Each of the processor nodes is configured to receive a portion of image data generated by the detector during scanning of a wafer. The system also includes an array of storage media separately coupled to each of the processor nodes. The processor nodes are configured to send all of the image data or a selected portion of the image data received by the processor nodes to the arrays of storage media such that all of the image data or the selected portion of the image data generated by the detector during the scanning of the wafer is stored in the arrays of the storage media.

Abstract: Methods and systems for generating an inspection process for a wafer are provided. One computer-implemented method includes separately determining a value of a local attribute for different locations within a design for a wafer based on a defect that can cause at least one type of fault mechanism at the different locations. The method also includes determining a sensitivity with which defects will be reported for different locations on the wafer corresponding to the different locations within the design based on the value of the local attribute. In addition, the method includes generating an inspection process for the wafer based on the determined sensitivity. Groups may be generated based on the value of the local attribute thereby assigning pixels that will have at least similar noise statistics to the same group, which can be important for defect detection algorithms. Better segmentation may lead to better noise statistics estimation.

Abstract: Various computer-implemented methods are provided. One method for sorting defects in a design pattern of a reticle includes searching for defects of interest in inspection data using priority information associated with individual defects in combination with one or more characteristics of a region proximate the individual defects. The priority information corresponds to modulation levels associated with the individual defects. The inspection data is generated by comparing images of the reticle generated for different values of a lithographic variable. The images include at least one reference image and at least one modulated image. A composite reference image can be generated from two or more reference images. The method also includes assigning one or more identifiers to the defects of interest. The identifier(s) may include, for example, a defect classification and/or an indicator identifying if the defects of interest are to be used for further processing.

Abstract: Computer-implemented methods and systems for determining different process windows for a wafer printing process for different reticle designs are provided. One method includes generating simulated images illustrating how each of the different reticle designs will be printed on a wafer at different values of one or more parameters of the wafer printing process. The method also includes detecting defects in each of the different reticle designs using the simulated images. In addition, the method includes determining a process window for the wafer printing process for each of the different reticle designs based on results of the detecting step.

Abstract: Computer-implemented methods, computer-readable media, and systems for identifying one or more optical modes of an inspection system as candidates for use in inspection of a layer of a wafer are provided. One method includes determining one or more characteristics of images of the layer of the wafer acquired using the inspection system and different optical modes available on the inspection system. The method also includes identifying a first portion of the different optical modes as not candidates for use in the inspection of the layer of the wafer based on the one or more characteristics of the images. In addition, the method includes generating output by eliminating the first portion of the different optical modes from the different optical modes at which the images were acquired such that the output includes a second portion of the different optical modes indicated as the candidates for use in the inspection.

Abstract: Computer-implemented methods, carrier media, and systems for selecting polarization settings for an inspection system for inspection of a layer of a wafer are provided. One method includes detecting a population of defects on the layer of the wafer using results of each of two or more scans of the wafer performed with different combinations of polarization settings of the inspection system for illumination and collection of light scattered from the wafer. The method also includes identifying a subpopulation of the defects for each of the different combinations, each of which includes the defects that are common to at least two of the different combinations, and determining a characteristic of a measure of signal-to-noise for each of the subpopulations. The method further includes selecting the polarization settings for the illumination and the collection to be used for the inspection corresponding to the subpopulation having the best value for the characteristic.

Abstract: Systems and methods for acquiring information about a defect on a specimen are provided. One system includes an optical subsystem configured to acquire topography information about the defect. The system also includes an electron beam subsystem configured to acquire additional information about the defect. One method includes acquiring first data for the defect using an optical technique and second data for the defect using an electron beam technique. The first and second data is acquired while the specimen is disposed in a single vacuum chamber. The method also includes determining topography information about the defect from the first data. In addition, the method includes determining additional information about the defect from the second data.