Patents Represented by Attorney Armand McMillan
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Patent number: 5100587Abstract: A new type of RL light source consisting of a zeolite crystalline material, the intralattice spaces of which a tritiated compound and a luminophore are sorbed, and which material is optionally further dispersed in a refractive index-matched polymer matrix.Type: GrantFiled: December 27, 1990Date of Patent: March 31, 1992Assignee: The United States of America as represented by the Department of EnergyInventors: Roger L. Clough, John T. Gill, Daniel B. Hawkins, Clifford L. Renschler, Timothy J. Shepodd, Henry M. Smith
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Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching
Patent number: 5092957Abstract: The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentration form a self-aligned mask inhibiting photochemical etching at such localized regions while the adjacent regions not having increased impurity concentrations are selectively photochemically etched. Liquid- or gas-phase etching may be performed.Type: GrantFiled: November 24, 1989Date of Patent: March 3, 1992Assignee: The United States of America as represented by the United States Department of EnergyInventors: Carol I. H. Ashby, David R. Myers -
Patent number: 5066565Abstract: A photolithographic method for treating an article formed of polymeric material comprises subjecting portions of a surface of the polymeric article to ionizing radiation; and then subjecting the surface to chemical etching. The ionizing radiation treatment according to the present invention minimizes the effect of the subseuent chemical etching treatment. Thus, selective protection from the effects of chemical etching can be easily provided. The present invention has particular applicability to articles formed of fluorocarbons, such as PTFE. The ionizing radiation employed in the method may comprise Mg(k.alpha.) X-rays or lower-energy electrons.Type: GrantFiled: March 29, 1989Date of Patent: November 19, 1991Assignee: The United States of America as represented by the United States Department of EnergyInventors: Robert J. Martinez, Robert R. Rye
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Patent number: 5045508Abstract: A method of improving surface-dependent properties of phosphate glass such as durability and wear resistance without significantly affecting its thermal expansion coefficient is provided which comprises annealing the glass in a dry ammonia atmosphere at temperatures approximating the transition temperature of the glass. The ammonia annealing treatment of the present invention is carried out for a time sufficient to allow incorporation of a thin layer of nitrogen into the surface of the phosphate glass, and the treatment improves the durability of the glass without the reduction in the thermal expansion coefficient that has restricted the effectiveness of prior ammonia treatments. The improved phosphate glass resulting from this method is superior in wear resistance, yet maintains suitable thermal expansion properties so that it may be used effectively in a variety of applications requiring hermetic glass-metal seals.Type: GrantFiled: April 30, 1990Date of Patent: September 3, 1991Assignee: The United States of America as represented by the United States Department of EnergyInventors: Richard K. Brow, Delbert E. Day
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Patent number: 5023200Abstract: A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.Type: GrantFiled: November 22, 1988Date of Patent: June 11, 1991Assignee: The United States of America as represented by the United States Department of EnergyInventors: Robert S. Blewer, Terry R. Gullinger, Michael J. Kelly, Sylvia S. Tsao
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Patent number: 5015346Abstract: An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.Type: GrantFiled: April 10, 1990Date of Patent: May 14, 1991Assignee: United States Department of EnergyInventors: Terry R. Guilinger, Howland D. T. Jones, Michael J. Kelly, John W. Medernach, Joel O. Stevenson, Sylvia S. Tsao
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Patent number: 5011610Abstract: A method for reducing the concentration of any undesirable metals dissolved in contaminated water, such as waste water. The method involves uniformly reacting the contaminated water with an excess amount of solid particulate calcium sulfite to insolubilize the undesirable metal ions, followed by removal thereof and of the unreacted calcium sulfite.Type: GrantFiled: February 2, 1990Date of Patent: April 30, 1991Assignee: The United States of America as represented by the United States Department of EnergyInventors: Frank S. Martin, Gary L. Silver
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Patent number: 5009690Abstract: The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals.Type: GrantFiled: March 9, 1990Date of Patent: April 23, 1991Assignee: The United States of America as represented by the United States Department of EnergyInventors: Richard M. Curlee, Clinton D. Tuthill, Randall D. Watkins
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Patent number: 5001107Abstract: This invention provides improved methods for the preparation of precursor powders that are used in the preparation of superconducting ceramic materials that contain thallium. A first solution that contains the hydrogen peroxide and metal cations, other than thallium, that will be part of the ceramic is quickly mixed with a second solution that contains precipitating anions and thallium (I) to form a precipitate which is dried to yield precursor powders. The precursor powders are calcined an sintered to produce superconducting materials that contain thallium.Type: GrantFiled: August 2, 1989Date of Patent: March 19, 1991Assignee: The United States Department of EnergyInventors: Bruce C. Bunker, Diana L. Lamppa, James A. Voigt
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Patent number: 4996922Abstract: A thermite igniter/heat source comprising a housing, high-density thermite, and low-density thermite. The housing has a relatively low profile and can focus energy by means of a torch-like ejection of hot reaction products and is externally ignitable.Type: GrantFiled: November 15, 1989Date of Patent: March 5, 1991Assignee: The United States of America as represented by the United States Department of EnergyInventors: Danny L. Halcomb, Jonathan H. Mohler
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Patent number: 4997597Abstract: A solid state radioluminescent composition for light source comprises an optically clear polymer organic matrix containing tritiated organic materials and dyes capable of "red" shifting primary scintillation emissions from the polymer matrix. The tritiated organic materials are made by reducing, with tritium, an unsaturated organic compound that prior to reduction contains olefinic or alkynylic bonds.Type: GrantFiled: November 13, 1989Date of Patent: March 5, 1991Assignee: The United States of America as represented by the United States Department of EnergyInventors: Roger L. Clough, John T. Gill, Daniel B. Hawkins, Clifford L. Renschler, Timothy J. Shepodd, Henry M. Smith
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Patent number: 4995954Abstract: A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon.Type: GrantFiled: February 12, 1990Date of Patent: February 26, 1991Assignee: The United States of America as represented by the Department of EnergyInventors: Terry R. Guilinger, Michael J. Kelly, Samuel B. Martin, Jr., Joel O. Stevenson, Sylvia S. Tsao
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Patent number: 4978418Abstract: A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.Type: GrantFiled: August 18, 1988Date of Patent: December 18, 1990Assignee: The United States of America as represented by the United States Department of EnergyInventors: George W. Arnold, Jr., Carol I. H. Ashby, Paul J. Brannon
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Patent number: 4971633Abstract: A photovoltaic assembly for converting high intensity solar radiation into lectrical energy in which a solar cell is separated from a heat sink by a thin layer of a composite material which has excellent dielectric properties and good thermal conductivity. This composite material is a thin film of porous Al.sub.2 O.sub.3 in which the pores have been substantially filled with an electrophoretically-deposited layer of a styrene-acrylate resin. This composite provides electrical breakdown strengths greater than that of a layer consisting essentially of Al.sub.2 O.sub.3 and has a higher thermal conductivity than a layer of styrene-acrylate alone.Type: GrantFiled: September 26, 1989Date of Patent: November 20, 1990Assignee: The United States of America as represented by the Department of EnergyInventors: Leonard C. Beavis, Janda K. G. Panitz, Donald J. Sharp
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Patent number: 4963203Abstract: A high- and low-temperature-stable thermite composition for producing high-pressure and high-velocity gases comprises an oxidizable metal, an oxidizing reagent, and a high-temperature-stable gas-producing additive selected from the group consisting of metal carbides and metal nitrides.Type: GrantFiled: March 29, 1990Date of Patent: October 16, 1990Assignee: The United States of America as represented by the United States Department of EnergyInventors: Danny L. Halcomb, Jonathan H. Mohler
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Patent number: 4929582Abstract: A catalytic material of improved activity which comprises a hydrous, alkali metal or alkaline earth metal or quaternary ammonium titanate, zirconate, niobate, or tantalate, in which the metal or ammonium cations have been exchange with a catalytically effective quantity of a catalyst metal, and which has been subsequently treated with a solution of a Bronsted acid.Type: GrantFiled: April 9, 1986Date of Patent: May 29, 1990Assignee: The United States of American as Represented by The United States Department of EnergyInventors: Robert G. Dosch, Howard P. Stephens
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Patent number: 4929468Abstract: Amorphous alloys are deposited by a process of thermal dissociation of mixtures or organometallic compounds and metalloid hydrides, e.g., transition metal carbonyl such as nickel carbonyl, and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit.Type: GrantFiled: March 18, 1988Date of Patent: May 29, 1990Assignee: The United States of America as represented by the United States Department of EnergyInventor: Arthur W. Mullendore
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Patent number: 4917784Abstract: A photochemical reaction for the oxidation of hydrocarbons uses molecular oxygen as the oxidant. A reductive photoredox cycle that uses a tin(IV)- or antimony(V)-porphyrin photosensitizer generates the reducing equivalents required to activate oxygen. This artificial photosynthesis system drives a catalytic cycle, which mimics the cytochrome P.sub.450 reaction, to oxidize hydrocarbons. An iron(III)- or manganese(III)-porphyrin is used as the hydrocarbon-oxidation catalyst. Methylviologen can be used as a redox relay molecule to provide for electron-transfer from the reduced photosensitizer to the Fe or Mn porphyrin. The system is long-lived and may be used in photo-initiated spectroscopic studies of the reaction to determine reaction rates and intermediates.Type: GrantFiled: September 26, 1989Date of Patent: April 17, 1990Assignee: The United States of America as represented by the United States Department of EnergyInventor: John A. Shelnutt
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Patent number: 4907509Abstract: A column of explosive in a low-voltage detonator which makes it bonfire-safe includes a first layer of an explosive charge of CP, or a primary explosive, and a second layer of a secondary organic explosive charge, such as PETN, which has a degradation temperature lower than the autoignition temperature of the CP or primary explosives. The first layer is composed of a pair of increments disposed in a bore of a housing of the detonator in an ignition region of the explosive column and adjacent to and in contact with an electrical ignition device at one end of the bore. The second layer is composed of a plurality of increments disposed in the housing bore in a transition region of the explosive column next to and in contact with the first layer on a side opposite from the ignition device. The first layer is loaded under a sufficient high pressure, 25 to 40 kpsi, to achieve ignition, whereas the second layer is loaded under a sufficient low pressure, about 10 kpsi, to allow occurrence of DDT.Type: GrantFiled: July 1, 1988Date of Patent: March 13, 1990Assignee: The United States of America as represented by the United States Department of EnergyInventor: Morton L. Lieberman
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Patent number: 4892628Abstract: Amorphous ternary nickel-chromium-phosphorus alloys are electrodeposited from a bath comprising a nickel salt, a chromium salt, a phosphorus source such as sodium hypophosphite, a complexing agent for the nickel ions, supporting salts to increase conductivity, and a buffering agent. The process is carried out at about room temperature and requires a current density between about 20 to 40 A/dm.sup.2.Type: GrantFiled: April 14, 1989Date of Patent: January 9, 1990Assignee: The United States Department of EnergyInventor: Terry R. Guilinger