Abstract: An electrostatic chuck (20) for holding a substrate (40) in a process chamber (50) comprises a base (25) supporting a resilient insulator (30). The insulator (30) comprises (i) an electrode (35) embedded therein; (ii) a top surface (34) with a peripheral edge (32); and (iii) cooling grooves (45) for holding coolant in the top surface (34), the tips (125) of the cooling grooves (45) and the peripheral edge (32) of the insulator (30) defining an edge gap (130) having a width w. The width w of the edge gap (130) is sized sufficiently small that the coolant in the grooves (45) cools the perimeter (120) of the substrate (40) held on the chuck (20). The insulator (30) is sufficiently thick that when a substrate (40) is electrostatically held on the chuck (20) and coolant is held in the cooling grooves (45), the insulator (30) in the edge gap (130) resiliently conforms to the substrate (40) so that substantially no coolant leaks out from the tips (125) of the cooling grooves (45).

Abstract: An apparatus suitable for marking a substrate comprises a holder for holding a substrate and a ground for electrically grounding the substrate. At least one needle electrode has a tip located proximate to the substrate so that there is a gap between the substrate and the tip. A high voltage source provides a current to the electrode tip to ionize the gas in the gap so that the ionized gas can impinge upon and mark the substrate.

Abstract: A new susceptor design for used in plasma processing of substrates is provided. The susceptor is made of metal and serves as one of the electrodes in a parallel plate plasma reactor. The susceptor is flat and has no lip at its rim. A substrate having substantially the same diameter as the susceptor is placed on and covers the susceptor. This arrangement allows a uniform electric field to be formed across the whole surface of the substrate. As a result, the deposition on the surface of the substrate is uniform.

Abstract: An electrical connector (20) for connecting a battery post (25) to a wire (30) is described. The electrical connector (20) comprises a U-shaped clamp (35) having (i) a concave portion (40) sized to hold the battery post (25); and (ii) opposing first and second legs (45), (50) extending from the concave portion. The first leg (45) has a first hole (55) therethrough, and the second leg (50) has a second hole (60) that is substantially aligned with the first hole. Unitary compression means extending through the first and second holes of the U-shaped clamp, is provided for (i) compressing a wire against the U-shaped clamp, and (ii) compression fitting the U-shaped clamp about the battery post. In a preferred configuration, the unitary compression means comprises a wire holding compression stud (65) extending through the first hole (55) and second hole (60), and fastening means for tightening the stud (65) on the U-shaped clamp (35).

Abstract: The apparent size of sub-micron contaminant particles on a wafer surface is enlarged by selective condensation of a vapor on the particles. The substrate is located proximate to and spaced apart from a liquid vapor source which is heated. The vaporized liquid adheres to the particles, and after a predetermined period of time, condensation of vapor on the substrate is stopped, and the substrate is scanned for detecting the particles.

Abstract: An electrostatic chuck having reduced erosion in erosive process environments is described. The electrostatic chuck comprises an insulator with (i) an electrode therein, (ii) a central portion overlying the electrode, and adapted to support a substrate thereon, and (iii) a peripheral portion extending beyond the electrode. In one version of the invention, the central portion of the insulator is raised relative to the lower peripheral portion of the insulator, thereby defining a step having a height H, which is maintained at less than about 10 microns, to reduce erosion of the insulator. In another version of the chuck, the peripheral portion of the insulator extends beyond the electrode and has a width W, which is maintained at at least about 2 mm to reduce erosion of the insulator.

Abstract: A metal structure, such as an apparatus used in plasma processing of substrates, is rendered resistant to corrosion by coating components exposed to the plasma with a coating of rhodium. The rhodium coating can be made by electroplating, and preferably has a thickness of at least about 10 microinches, and preferably from about 10 to about 100 microinches. A coating of nickel can be applied between the rhodium coating and the metal component.

Abstract: An electrostatic chuck 20 for holding substrates 42 in a process chamber 40 containing a magnetic flux 43 comprises a base 22 having an upper surface adapted to support a substrate 42 thereon. An insulator 26 with an electrode 24 therein, is on the base 22. A magnetic shunt 34 comprising a ferromagnetic material is positioned (i) either on the base 22, or (ii) in the insulator 26, or (iii) directly below, and contiguous to, the base 22.

Abstract: A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.

Abstract: A process for passivating, and optionally stripping and inhibiting corrosion of an etched substrate (20), is described. In the process, a substrate (20) having etchant byproducts (24) thereon, is placed into a vacuum chamber (52), and passivated in a multicycle passivation process comprising at least two passivating steps. In each passivating step, passivating gas is introduced into the vacuum chamber (52) and a plasma is generated from the passivating gas. When the substrate also has remnant resist (26) thereon, the resist (26) is stripped in a multicycle passivation and stripping process, each cycle including a passivating step and a stripping step. The stripping step is performed by introducing a stripping gas into the vacuum chamber (52) and generating a plasma from the stripping gas. In the multicycle process, the passivating and optional stripping steps, are repeated at least once in the same order that the steps were done.

Abstract: An erosion resistant electrostatic chuck (20) comprises an electrostatic member (22) supported by a base (24), the base (24) having a peripheral edge (26). A cutaway segment (28) in the peripheral edge (26) of the base holds an insulated electrical connector (30) for electrically connecting the electrostatic member (22) on the chuck (20) to a voltage supply (62)in a process chamber (36). A removable plug (40) is in the cutaway (28), and covers a portion of the insulated electrical connector (30) for protecting the electrical connector from erosion in the process chamber (36). Preferably, the removable plug (40)is substantially L-shaped with the bottom leg of the "L" in the bottom of the cutaway (28), and the upstanding leg of the "L" abutting against the side of the cutaway (28).

Abstract: A metal structure, such as an apparatus used in plasma processing of substrates, is rendered resistant to corrosion by coating components exposed to the plasma with a coating of rhodium. The rhodium coating can be made by electroplating, and preferably has a thickness of at least about 10 microinches, and preferably from about 10 to about 100 microinches. A coating of nickel can be applied between the rhodium coating and the metal component.

Abstract: A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.

Abstract: A corrosion resistant electrostatic chuck 10 for holding a silicon wafer 18 during processing with a corrosive gas has an electrically insulative layer 12 thereon protected from corrosion by a guard 14. The insulative layer 12 has a top surface 20 covered by the silicon wafer 18 and an exposed side surface 16. The guard 14 substantially encloses the exposed side surface 16 of the insulative layer 12 and protects the insulative layer 12 from a corrosive gas. The guard 14 is made of sacrificial material that corrodes at least as fast as the insulative layer 12 corrodes when exposed to the corrosive gas. The sacrificial material positioned near the exposed side surface 16 corrodes and reduces the concentration of the corrosive gas at the exposed side surface 16, thereby reducing the rate of corrosion of the insulative layer 12.

Abstract: A process and apparatus for depositing silicon nitride on a substrate 28 is described. The substrate 28 is placed in a deposition zone 24 within a deposition chamber 22, and a process gas comprising a silicon containing gas and a nitrogen containing gas is introduced into the deposition zone 24 through an inlet gas conduit 30. The substrate 28 is heated to a temperature T.sub.d which is sufficiently high to cause the process gas to deposit silicon nitride on the substrate 28, and the resultant process gas byproducts are exhausted through an exhaust gas conduit 32. At least one of the inlet and exhaust gas conduits 30 and 32 are heated to a temperature T.sub.h within the range .DELTA.T.sub.h, wherein all the temperatures T.sub.h are sufficiently higher than T.sub.c the temperature at which process gas condenses in the gas conduits, so that substantially no condensate deposits in the gas conduits, and all the temperatures T.sub.h are sufficiently lower than the deposition temperature T.sub.

Abstract: An apparatus suitable for marking a substrate comprises a holder for holding a substrate and a ground for electrically grounding the substrate. At least one needle electrode has a tip located proximate to the substrate so that there is a gap between the substrate and the tip. A high voltage source provides a current to the electrode tip to ionize the gas in the gap so that the ionized gas can impinge upon and mark the substrate.

Abstract: An adjustable container holder of the present invention comprises a fixed jaw and a movable jaw, the jaws having mutually opposed arcuate surfaces that define an adjustable aperture. An adjusting knob can move the movable jaw toward and apart from the fixed jaw, so that the adjustable aperture defined by the arcuate jaw surfaces can be adjusted to grasp containers having differing sizes.

Abstract: In a method for separating and regenerating a mixed bed of exhausted anion and cation resins and for removing metallic foulants from the mixed bed, substantially all of the cation and anion resins in the bed are separated by their respective buoyancies and metallic foulants are displaced from the resins using an amine salt solution having a density between the densities of the anion and cation resins. A composition formed during this method comprises the anion resin, the metallic foulants, the cation resin, and the amine salt solution.

Abstract: A stationary exercise bicycle comprises a frame having front and rear ground support elements, a front socket and a rear socket, and a seat socket; a pedal mechanism on said frame and a seat mounted on a seat socket at a level above the pedal mechanism, the seat being mounted for movement fore and aft relative to the seat socket, and upwardly and downwardly relative to the pedal mechanism.

Abstract: A process for etching titanium nitride on a substrate 20 is described. In the process, a substrate 20 having a titanium nitride layer 24c thereon, and an insulative oxide layer 26 on the titanium nitride layer 24c is placed in a process chamber 42. Either a single stage, or a multiple stage version, of the process is then effected to etch the insulative oxide and titanium nitride layers. In the single stage version, the insulative oxide layer 26 and titanium nitride layer 24c are etched in a single stage, by introducing an etchant gas comprising carbon-fluoride gas and carbon-oxide gas into the process chamber 42, and generating a plasma from the etchant gas. The multiple stage version, comprises a first stage in which the insulative oxide layer 26 is etched using a plasma generated from carbon-fluoride gas, and a second stage in which the titanium nitride layer 24c is etched using a plasma generated from an etchant gas comprising carbon-fluoride gas and carbon-oxide gas.