Abstract: Native oxides can be removed from a substrate having high aspect ratio openings therein by using a plasma gas precursor mixture of a reactive halogen-containing gas and a carrier gas such as helium. The lightweight ions generated in the plasma react with oxygen to produce very volatile oxygen-containing species that can be readily removed through the exhaust system of the plasma chamber, preventing re-deposition of oxides on the surface of the substrate or on the sidewalls or bottom of the openings. When the substrate is mounted in a plasma chamber having dual power sources that can form a plasma above the substrate and can apply bias to the substrate, tapered openings are formed rapidly that can be readily filled without forming voids.

Abstract: I have found that in order to improve sheet resistance uniformity of metal nitride films, such as titanium nitride, the chamber must be operated at low pressure. The nitrogen gas flow rates required to deposit metal nitride is determined, and the pumping speed in the chamber is increased to produce uniform films at low pressure.

Abstract: An improved barrier layer of tantalum to prevent diffusion of copper into a dielectric layer or silicon substrate is made by alternately sputter depositing thin amorphous tantalum layers and tantalum nitride layers. The resultant wholly amorphous tantalum-containing layer leads to a stronger barrier and prevents formation of a columnar structure in thick tantalum layers. The sputter depositions of tantalum and tantalum nitride can be repeated until the desired thickness of the barrier is obtained.

Abstract: An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber.

Abstract: Printing plates having a photoresist layer thereon that can be exposed by a computer controller laser have improved sensitivity and do not require a photomask step. We have found photoresists that include a film forming polymer, an organo azide and a photosensitive dye that absorbs light at the frequency of the patterning laser and converts it to heat energy. The heat energy in turn elevates the temperature of the organo azide above its dissociation temperature, destroying the azide in areas exposed to the light source, and solubilizing those regions. A post pattern exposure flood exposure with ultraviolet light hardens the unexposed resist, improving its resistance to etch solvents.

Abstract: Biofilm and debris can be removed from the interior and exterior surfaces of small bore tubing by passing an aqueous cleaning solution of water, one or more surfactants and preferably a source of hydrogen peroxide, optionally including small inert solid particles, together with a gas under pressure, to create a turbulent flow within the tubing that loosens the biofilm and debris so that they can be flushed from the tubing. When the exterior surfaces of tubing are to be cleaned, the tubing is inserted in a sleeve fitted with an adaptor that provides a pressure-tight seal between the tubing and the sleeve.

Abstract: The formation of toxic compounds such as acetaldehyde and monochlorofluoroethane generated by aerosol antiperspirant mixtures of ACH and 1,1-difluoroethane can be substantially reduced by the addition of one or more additives. Such additives include amino acids, their alkali metal, alkaline earth, ammonium and hydroxy aluminum salts, metal glycinates, hydrotalcite or analogues thereof, and complex aluminum buffering agents. The resultant mixtures are stable for at least two years under ambient storage conditions.

Abstract: A system and method for distributing gas to a substrate in a dry etch chamber make use of different flow channels to distribute the gas to different portions of a substrate. A first flow channel can be oriented to distribute gas to an inner portion of the substrate. A second flow channel can be oriented to distribute gas to an outer portion of the substrate. With different flow channels, the system and method enable separate control of gas distribution for different portions of the substrate. In particular, the flow channels allow separate control of gas flow rate, concentration, and flow time for different areas of the substrate. In this manner, gas distribution can be selectively controlled to compensate for different etch rates across the substrate surface. Also, gas distribution can be controlled as a function of etch rate patterns exhibited by different etch gasses used in successive process steps.

Abstract: A continuous process for the deposition of robust titanium-containing barrier layers comprises sputtering in a single substrate sputtering chamber a first layer of titanium, sputtering a layer of titanium nitride thereover, treating the titanium nitride layer with a plasma containing oxygen while continuing to sputter the titanium target to deposit a thin layer of TiON, and finally sputtering a layer of titanium over the titanium nitride. The latter step removes impurities from the titanium target, preventing poisoning of the target. Thus subsequent substrates can be continuously processed in said chamber without degrading the barrier properties or poisoning the titanium target.

Abstract: Printing plates having a photoresist layer thereon that can be exposed by a computer controller laser have improved sensitivity and do not require a photomask step. We have found photoresists that include a film forming polymer, an organo azide and a photosensitive dye that absorbs light at the frequency of the patterning laser and converts it to heat energy. The heat energy in turn elevates the temperature of the organo azide above its dissociation temperature, destroying the azide in areas exposed to the light source, and solubilizing those regions.Flood exposure with ultraviolet light hardens the resist and can be performed prior to or after pattern exposure.

Abstract: A method of stabilizing chemical vapor deposited titanium nitride layers so that they can withstand a subsequent high temperature deposition of aluminum which comprises heating said film in nitrogen containing from about 3-15% by volume of oxygen. When aluminum is deposited over the treated titanium nitride film, the barrier properties of the titanium nitride are maintained up to temperatures of at least about 575.degree. C.

Abstract: Thin, uniform films of silicon nitride can be deposited onto a single substrate in a low pressure chemical vapor deposition process at a practicable rate from a gas mixture including a silane precursor gas and ammonia by maintaining the pressure at between about 5 and about 100 Torr. Deposition rates of up to about 185 angstroms per minute are readily achieved.

Abstract: In the manufacture of CMOS devices, the n+ gate is partially counterdoped with boron to produce a modified p-type FET that has improved short channel effects, reduced gate induced drain leakage and gate oxide fields for improved reliability. A doped polysilicon layer is formed over a silicon or silicon oxide substrate, and is counterdoped with boron to a level of about 1.times.10.sup.13 /cm.sup.2 to 5.times.10.sup.16 /cm.sup.2 to adjust the work function but without changing the essentially n-type character of the gate electrode. This single counterdoping step achieves improved results for sub-micron devices at low cost. For CMOS device manufacturing, the alternating n-type and p-type devices are made in similar manner but reversing the n-type and p-type dopants.

Abstract: A method of producing silicon oxy-nitride films is provided by utilizing a reactant gas mixture of silane, nitrous oxide and nitrogen at a low deposition temperature of less than 250.degree. C. by flowing the reactant gas mixture through a gas inlet manifold which is also an upper electrode in a plasma-enhanced chemical vapor deposition chamber. The gas inlet manifold is the upper plate of a parallel plate plasma chamber for communicating the reactant gas into the chamber. The plate has a plurality of apertures, each comprising an outlet at a chamber or processing side of the plate and an inlet spaced from the processing side, with the outlet being larger than the inlet for enhancing the dissociation and reactivity of the gas.

Abstract: Golden TiN films having uniform sheet resistance are deposited from a plasma sputtering chamber by initially saturating the chamber with nitrogen using high nitrogen gas flow rates and then reducing the nitrogen gas flow rates and reducing the pressure in the chamber during the deposition step.

Abstract: Improved titanium nitride barrier layers are formed by depositing a first titanium layer; treating this layer with an oxygen plasma to form an oxygen-containing titanium layer thereover; depositing a titanium nitride layer over the oxygen-containing titanium layer; and treating the titanium nitride layer with an oxygen-containing plasma. Robust titanium nitride barrier layers are formed that can prevent spiking by an overlying aluminum contact layer even after heat treatment up to 550.degree. C.

Abstract: In order to improve the uniformity of erosion of a sputtering chamber target during sputtering, and to prevent re-deposition of target material onto the target surface, the size and shape of the magnet pair above the target is chosen to maximize uniform erosion across the surface of the target. Re-deposition of target material onto the target is particularly a problem during plasma, high pressure sputtering.

Abstract: A method of producing doped and undoped silicon layers on a substrate by chemical vapor deposition at elevated pressures of from about 10 to about 350 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temperature adjusted to obtain a silicon deposit of predetermined crystallinity, and the silicon precursor gases fed to the chamber to a preselected high pressure. Both undoped and doped silicon can be deposited at high rates up to about 3000 angstroms per minute.

Abstract: A process for etching single crystal silicon, polysilicon, silicide and polycide using iodinate or brominate gas chemistry, is disclosed. The iodinate/brominate gas chemistry etches narrow deep trenches with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.