Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

Abstract: Disclosed are systems and methods for separating a glass sheet along a predetermined line. Laser beams are generated and shaped into elongated laser beams. Arm members are provided that are pivotally coupled together to form a chain of arm members. Each elongated laser beam is directed therefrom a respective laser beam toward the glass sheet to form a contiguous chain of elongated laser beams thereon a surface of the glass sheet. The arm members can be moved to move the contiguous chain of elongated laser beams along the predetermined line to scoring the glass sheet along the predetermined line.

Abstract: Non-contact manipulating devices and methods can include a fluid distribution member including a first fluid port configured to dispense fluid and create a Bernoulli effect to attract an article to be manipulated by the manipulating device while maintaining a gap between the article and the fluid distribution member. The fluid distribution member can further include a second fluid port configured to dispense fluid to assist in maintaining the gap. The non-contact manipulating devices and methods can further include a controller configured to control a fluid flow through at least the second fluid port to help maintain the gap.

Abstract: Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.

Abstract: A GaN edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate defines a 20 21 crystal growth plane and a glide plane. The N-side and P-side waveguiding layers comprise a GaInN/GaN or GaInN/GaInN superlattice (SL) waveguiding layers. The superlattice layers of the N-side and P-side SL waveguiding layers define respective layer thicknesses that are optimized for waveguide planarity, the layer thicknesses being between approximately 1 nm and approximately 5 nm. In accordance with another embodiment of the present disclosure, planarization can be enhanced by ensuring that the N-side and P-side GaN-based waveguiding layers are grown at a growth rate that exceeds approximately 0.09 nm/s, regardless of whether the N-side and P-side GaN-based waveguiding layers are provided as a GaInN/GaN or GaInN/GaInN SL or as bulk waveguiding layers.

Abstract: Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.

Abstract: A GaN-based edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate is characterized by a threading dislocation density on the order of approximately 1×106/cm2. The strain-thickness product of the N-side waveguiding layer exceeds its strain relaxation critical value. In addition, the cumulative strain-thickness product of the active region calculated for the growth on a the relaxed N-side waveguiding layer is less than its strain relaxation critical value. As a result, the N-side interface between the N-type cladding layer and the N-side waveguiding layer comprises a set of N-side misfit dislocations and the P-side interface between the P-type cladding layer and the P-side waveguiding layer comprises a set of P-side misfit dislocations. Additional embodiments are disclosed and claimed.

Abstract: A multi-station polish system and process for polishing thin, flat (planar) and rigid workpieces. Workpieces are conveyed through multiple polishing stations that include a bulk material removal belt polishing station and finishing rotary polishing station. The bulk of the material is relatively quickly removed at the bulk removal station using a conformable abrasive belt and the workpiece surface is then polished to the desired finish at the finishing station using a conformable annular rotary polishing pad.

Abstract: Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.

Abstract: Methods and apparatus for measuring ion implant dose in a material provide for: measuring a reflection spectrum through an implantation surface of the material, the implantation surface having been subjected to an ion implantation process to create a material layer from the implantation surface to a depth within the material and a layer of weakness below the material layer; storing magnitudes of the reflection spectrum as a function of respective wavelengths of incident light on the implantation surface; and computing an ion implant dose used during the ion implantation process based on comparisons of at least two magnitudes of the reflection spectrum at least two corresponding wavelengths of the incident light.

Abstract: A method for determining a position of a selected area of a sheet of material relative to a reference plane includes launching a first incident light beam at the selected area of the sheet of material such that the first incident light beam strikes the selected area at a first position and a first angle, thereby producing a first reflected light beam. A second incident light beam is launched at the selected area of the sheet of material such that the second incident light beam strikes the selected area at a second position and a second angle, thereby producing a second reflected light beam. The second position and second angle are different from the first position and first angle, respectively. The first reflected light beam and the second reflected light beam are intercepted at the reference plane.

Abstract: Processes for transferring a semiconductor material to a polymer substrate to provide flexible semiconductor material include implanting ions to a predetermined depth in a semiconductor substrate, heat-treating the ion-implanted semiconductor substrate for a period of time and at a temperature effective to cause defect formation and enlargement of the implanted ion defect, adhering the ion-implanted, heat-treated substrate to a polymer substrate, and separating a semiconductor film such as a single crystal silicon film from the semiconductor substrate; and devices having single crystal silicon films disposed directly or indirectly on polymer films.

Abstract: Disclosed are systems and methods for scoring and separating a glass sheet along a curved trajectory using a laser and optics. The system includes a laser that generates a laser beam, a focusing lens, and a conical optical component, such as a conical lens or a reflective conical mirror. The laser directs the laser beam through the focusing lens and conical lens to create a curved score line that is projected onto a glass sheet to create a curved score line, along which the glass sheet can be separated. Optionally, the laser directs the laser beam through the focusing lens towards a conical mirror, off of which the laser beam is reflected toward the glass sheet to create a curved score line.

Abstract: Methods and apparatus provide for: a first source of plasma (first plasma), which includes a first species of ions, directing the first plasma out along a first axis; a second source of plasma (second plasma), which includes a second, differing, species of ions, directing the second plasma out along a second axis; and an accelerator system in communication with the first and second sources of plasma, and operating to: (i) accelerate the first species of ions at a first magnitude therethrough, and toward a semiconductor wafer, and (ii) simultaneously accelerate the second species of ions at a second magnitude, different from the first magnitude, therethrough, and toward the semiconductor wafer.

Abstract: The present invention relates to a semiconductor-on-insulator structure including a semiconductor component comprised of substantially single-crystal semiconductor material layer and a single-crystal semiconductor material with an enhanced oxygen content layer; an oxide glass material layer; and a glass-ceramic layer.

Abstract: A composition is disclosed comprising a fine zircon component having a median particle size of less than 5 ?m, a medium zircon component having a median particle size of from 5 ?m to 15 ?m, and a sintering aid, wherein the composition, after firing, has a strain rate of less than about 1×10?6/hr. A method for making a green body comprising contacting a fine zircon component having a median particle size of less than 5 ?m, a medium zircon component having a median particle size of from 5 ?m to 15 ?m, and a sintering aid, and then forming the mixture into a desired shape is disclosed.

Abstract: Methods and apparatus for forming a semi-spherical polishing pad for polishing semiconductor surfaces, provide for: placing a polishing pad pre-form on a dome-shaped forming surface, the polishing pad pre-form including a circular body having a center and an outer peripheral edge, and a plurality of slots extending from the outer peripheral edge towards the center; disposing a bladder opposite to the dome-shaped forming surface and the polishing pad pre-form; inflating the bladder with a fluid such that the dome-shaped forming surface of the bonnet form presses against the polishing pad pre-form from one side and the bladder presses against the polishing pad pre-form from an opposite side; and maintaining the pressing step for a predetermined period of time to achieve the semi-spherical polishing pad.

Abstract: Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.

Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.

Abstract: The spacing between an abrasive type surface polishing tool and the surface of the work piece that is being polished is controlled dynamically so that variations in the area of the abrasive pad in contact with the surface of the work piece compensated, thereby eliminating size variations in this contact area and the accompanying variations in material removal that produce surface height fluctuations.