Abstract: Methods and apparatus provide for: a base on which a substrate may be releasably coupled; a moving belt located with respect to the base such that a contact surface thereof is operable to remove material from a top surface of the substrate; and a plurality of actuators, at least two of which are independently controllable, located with respect to the base and the moving belt such that a corresponding plurality of pressure zones are defined to provide pressure between the moving belt and the top surface of the substrate.

Abstract: Systems, methods, apparatus and products relate to display glass from curved glass ribbons, to improve shape stability in glass ribbons, to creation of reduced stress glass ribbons, and to creation of improved shape stability and reduced stress of display glass, which may include forming slightly a curved glass ribbon in a fusion draw machine (FDM). One or more embodiments may include an isopipe having a desired curvature; an isopipe having a desired incline; an offset draw device operable to draw the glass ribbon in an inclined ribbon draw direction; one or more air jets or vacuum operable to apply air pressure to a first side of the glass ribbon, thereby creating a pressure differential on the first side; and/or one or more electrostatic force generators operable to apply electrostatic force to a first side of the glass ribbon, thereby generating an electric field differential across the glass ribbon.

Abstract: Packages for elements, e.g., OLEDs, that are temperature sensitive are provided. The packages have a first glass substrate (12), a second glass substrate (16), and a wall (14) that separates the first and second substrates (12,16) and hermetically seals at least one temperature sensitive element (18,28,36) between the substrates (12,16). The wall (14) comprises a sintered frit and at least a portion of the wall is laser sealed to the second substrate (16) by melting a glass component of the sintered frit. The minimum width (40) of the laser-sealed portion of the wall (14) at any location along the wall (14) is greater than or equal to 2 millimeters so as to provide greater hermeticity and strength to the package. The laser sealing is performed without substantially degrading the temperature sensitive element(s) (18,28,36) housed in the package.

Abstract: Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.

Abstract: Methods and assemblies relate to bezel packaging of a sealed glass assembly, such as a frit-sealed OLED device. The bezel packaging includes a shock absorbent intermediate layer of low modulus of elasticity material applied between the sealed glass assembly and the bezel. A bonding agent, which may include the low modulus of elasticity material and/or a separate bonding material, affixes the sealed glass assembly to the bezel. Bezel modifications may be made to stabilize the bezel. Exemplary bezel modifications include reinforced bezel side walls and supporting straps attached between bezel walls. The bezel design may include a gap between the edges of the sealed glass assembly and the bezel walls, so as to avoid direct contact therewith. The gap may be filled at least in part with low modulus of elasticity organic adhesive to provide additional shock absorbency. The low modulus of elasticity material may include foam, ceramic fiber cloth and/or a low modulus of elasticity polymeric organic coating.

Abstract: A composition is disclosed comprising a fine zircon component having a median particle size of less than 5 ?m, a medium zircon component having a median particle size of from 5 ?m to 15 ?m, and a sintering aid, wherein the composition, after firing, has a strain rate of less than about 1×10?6/hr. A method for making a green body comprising contacting a fine zircon component having a median particle size of less than 5 ?m, a medium zircon component having a median particle size of from 5 ?m to 15 ?m, and a sintering aid, and then forming the mixture into a desired shape is disclosed.

Abstract: Methods and apparatus provide for contacting respective first surfaces of a plurality of donor semiconductor wafers with a glass substrate; bonding the first surfaces of the plurality of donor semiconductor wafers to the glass substrate using electrolysis; separating the plurality of donor semiconductor wafers from the glass substrate leaving respective exfoliation layers bonded to the glass substrate; and depositing a further semiconductor layer on exposed surfaces of the exfoliation layers to augment a thickness of the exfoliation layers.

Abstract: A hermetically sealed package includes: a first plate including inside and outside surfaces; a second plate including inside and outside surfaces; frit material disposed on the inside surface of the second plate; and at least one dielectric layer disposed directly or indirectly on at least one of: (i) the inside surface of the first plate at least opposite to the frit material, and (ii) the inside surface of the second plate at least directly or indirectly on the frit material, wherein the frit material forms a hermetic seal against the dielectric layer in response to heating.

Abstract: Methods and apparatus provide for a glass or glass ceramic substrate, including: a bulk layer; an enhanced positive ion concentration layer; and a reduced positive ion concentration layer, wherein the enhanced positive ion concentration layer contains substantially all modifier positive ions from the reduced positive ion concentration layer as a result of migration, the substrate does not include any further material thereon.

Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer and the support substrate is preferably at least 8 joules/meter2. The semiconductor layer can include a hybrid region in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.

Abstract: Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.

Abstract: A light source includes a first waveguide. The first waveguide includes a light emitting material having a first index of refraction and at least one layer is disposed over the light emitting material. The at least one layer has a second index of refraction and the first index of refraction is greater than the second index of refraction. The light source also includes a second waveguide, which is coupled to the first waveguide. The light emitting device also includes a light extraction structure.

Abstract: Apparatus and methods are provided for separating a pane (11) of a brittle material from a moving ribbon (13) of the material without contact between the newly-formed leading edge of the ribbon and the newly-formed trailing edge of the pane. The apparatus includes a pane engaging assembly (15), a transporter (29), and a connector assembly (31) which together ensure that the pane (11) and the sheet (13) do not contact each other once separation occurs. In this way, edge chipping and the resulting occurrence of surface defects on the separated pane are decreased.

Abstract: A method and apparatus for inverting sheets traveling through a machine with an inverter having a reversing chute and a reversing nip in the reversing chute. An incoming sheet is receiving into the reversing chute. The reversing nip reverses the direction of travel of the sheet and drives sheet out of the reversing chute. A gap is opened in said reversing nip, while the outgoing sheet still extends through the reversing nip. A subsequent incoming sheet is received into the reversing chute and through the gap in the reversing nip, while the outgoing sheet still extends through the gap. The gap is closed after the outgoing sheet has exited the reversing nip, such the reversing nip reverses the direction of travel of the subsequent incoming sheet and drives the sheet out of the reversing chute. The machine may be a printing or copying machine.

Abstract: A container for collecting waste developer in an electrostatographic printing machine employing a trickle type developing process and having a waste developer discharge tube with a discharge opening adjacent an outer end thereof for discharging waste developer. The container includes an outer wall enclosing an interior chamber, with a partition wall extending from an inner surface of the outer wall dividing the inner chamber into a collection chamber and an overflow chamber. An opening is formed in the outer wall into the overflow chamber. The opening is sized and shaped to receive the discharge tube therethrough. When received through the opening, the discharge tube extends through the overflow chamber, over an inner edge of the partition wall and into the collection chamber, with the discharge opening being located within the collection chamber. With this construction, the waste developer is discharged into the collection chamber.

Abstract: A carpet extractor is disclosed having scrub brushes located behind a transparent suction nozzle, whereby the brushes are visible through the nozzle. A main frame of the extractor is formed with transparent portions adjacent to the ends of the brushes, so that he brushes are also visible from the sides of the extractor. Headlights are provided on either side of the suction nozzle for illuminating the floor adjacent to the suction nozzle. The headlights are formed so that a portion of the light emitted by the headlights passes through a transparent portion of the main frame adjacent to the brushes and illuminates the brushes for improved viewing of he brushes. The headlights are also formed so that a portion of the light emitted by the headlights passes through the edge walls of the suction nozzle and illuminates the soiled cleaning liquid traveling through the nozzle.

Abstract: A novel carpet extractor is disclosed having a first cleaning liquid conduit that communicates a supply reservoir with a cleaning liquid distributor via a first valve and a second cleaning liquid conduit that communicates the supply reservoir with the liquid distributor via a second valve. The first valve is actuated by a main trigger and the second valve is actuated by a surge button, both of which are conveniently located in the hand grip on the handle of the machine for propelling the machine over a floor surface. A first normal flow of cleaning liquid is obtained for normal cleaning by depressing the trigger and a second greater flow of cleaning liquid is obtained by depressing the button and the trigger simultaneously. A mechanism is preferably included that will open the first valve in the event an operator depresses only the surge button.