Abstract: A broad-band light source using a semiconductor optical amplifier is provided. The broad-band light source includes the semiconductor optical amplifier including an active layer serving as a gain area, an under-cladding layer, an over-cladding layer, and antireflection layers formed at both ends of the active layer; and a reflector, located at the outside of the semiconductor optical amplifier, for reflecting light outputted from the semiconductor optical amplifier so that the reflected light is inputted back to the active layer so as to minimize gain ripple of the semiconductor optical amplifier.

Abstract: A gain-clamped semiconductor optical amplifier includes a semiconductor optical amplifier for amplifying an inputted optical signal and outputting amplified spontaneous emission light, the amplified spontaneous emission light consisting of a first portion and a second portion, the first portion having a wavelength range to be amplified. The amplifier further includes a wavelength selective reflector for allowing the first portion of the amplified spontaneous emission light to pass through the wavelength selective reflector and reflecting the second portion of the amplified spontaneous emission light again to the semiconductor optical amplifier, thereby clamping the gain of the amplifier.

Abstract: An optical fiber cable suitable installation using an air-blown method is disclosed. The optical fiber cable has a center tensile member located at a center of the optical fiber cable to provide tension-resistant force, at least three loose tubes each of which includes at least one optical signal transmitting medium, and located to surround a peripheral portion of the center tensile member, a binder surrounding the loose tubes to maintain an alignment pattern of the loose tubes, and a sheath located at an outermost portion of the optical fiber cable. The optical fiber cable has a polygonal sectional shape having smooth edges.

Abstract: An assembly for an optical home network includes a socket having input and output optical fibers, for transmitting optical signals, installed at corresponding positions of both sides of a connection hole. The assembly further includes a plug connected to a device and including input and output optical transmission lines respectively connected to the input and output optical fibers when the plug is inserted into the connection hole of the socket so as to be connected to the socket. The optical signals transmitted through the input and output optical fibers pass through the socket when the plug is not connected to the passive socket, and are transmitted to the device through the plug when the plug is connected to the socket.

Abstract: A light receiving element for converting a received light signal into an electric signal and its manufacturing method are disclosed. The light receiving element includes a semiconductor substrate of a first conduction type; a semiconductor layer of a second conduction type; and a photo-absorption layer interposed between the semiconductor substrate and the semiconductor layer of the second conduction type. The semiconductor substrate comprises: a first groove having an inclination with respect to an incidence plane of the light signal so that the light signal can be refracted when the light signal has been incident to the first groove; and a second groove by which the light signal having been refracted by the first groove is reflected fully and then absorbed into the photo-absorption layer, so that a vertical-incidence drift of the light signal toward the photo-absorption layer is minimized.

Abstract: A high-speed WPAN (Wireless Personal Area Network) system for enabling communication between piconets is configured by at least one first device located in the child piconet. A C-PNC (Child Piconet Coordinator) device includes a C-MIB (Child Piconet Management Information Base) stores mapping information associated with devices located in the child piconet and a P-MIB (Parent Piconet Management Information Base) stores mapping information associated with devices located in a parent piconet. At least one second device is located in the parent piconet. The first device includes a C-MIB and a first B-MIB (Bridging Management Information Base), detects destination information of data using the mapping information stored in the first B-MIB to transmit data to a device located in the parent piconet, and transmits the data containing the detected information to the C-PNC device.

Abstract: A conductive connector for use by an image module connects electrically a first electric circuit substrate having a first conductive pattern to a second electric circuit substrate having a second conductive pattern. The conductive connector includes an insulating substrate located between the first electric circuit substrate and the second electric circuit substrate, and has at least one hole formed by perforation, and a conductive filling material filled in the hole for electrically connecting the first conductive pattern to the second conductive pattern.

Abstract: An air venting apparatus for a milk bottle having a soft teat for a baby to suck, a bottle for containing milk, and a fixing frame for fixing the soft teat to the bottle without leakage. In the air venting apparatus, an upper plate is disposed between the top of a body of the bottle and the base of the teat and has at least one air inlet groove for guiding external air into the bottle body. A lower plate is combined with the upper plate and has at least one thorough hole and an air control valve to control the amount of the introduced air and discharges a gas generated from high-temperature milk outside the bottle body. An annular connection member is combined with the lower plate and provides the amount-controlled air into the bottle body.

Abstract: A method of growing a semiconductor layer in a selective area by Metal Organic Chemical Vapor Deposition (MOCVD) and a mask pattern for s ame, includes a first mask pattern and a second mask pattern that are formed on a semiconductor substrate having a (100) crystalline plane. The first mask pattern has a first window wider than the selective area and a second mask pattern has a second window and a third window. The second window is defined by spacing the second mask pattern from the first mask pattern, in correspondence with a blocking area for blocking the surface migration of III-group semiconductor source gases at edges of the first window. The third window is as wide as the selective area. The semiconductor layer is grown by MOCVD on the semiconductor substrate exposed by the second and third windows. Trenches can be etched in the second and third windows and growth layers extend from the trench beyond the surface of the InP to block gas dispersion.

Abstract: Disclosed is a Fabry-Perot laser device connected with an optical transmission link. The device comprises an optical circulator for forming an optical waveguide loop and circulating light through the optical waveguide loop and for outputting light from the optical waveguide loop through an external port; an optical fiber amplifier located on the optical waveguide loop and for amplifying the light circulating in the optical waveguide loop; a laser light source connected with the exterior port and being self-seeded by the light inputted through the exterior port and for outputting wavelength-locked light to the exterior port; and, a first splitter located on the loop for splitting a portion of the circulating light and for outputting the split-off light to the optical transmission link.

Abstract: Disclosed is a method of informing charging data to a mobile terminal in a code division multiple access (CDMA) type or time division multiple access (TDMA) type mobile radio communication system which enables a mobile terminal subscriber to immediately confirm the telephone charges of the mobile terminal. According to the method, a mobile communication exchange detects the termination of a telephone call by the mobile terminal, and the mobile communication exchange produces charging information for the telephone call and informs the charging information to a charging center. The charging center in turn calculates the telephone charge using the charging information received therein and informs the calculated telephone charge to the mobile communication exchange, and the mobile communication exchange transmits the telephone charge information to the mobile terminal.

Abstract: An electro-absorptive optical modulator module monolithic-integrated on a semiconductor substrate, which includes a distributed feedback laser having a grating for oscillating light and to output the oscillated light through a first end and a second end of the module. An electro-absorptive modulator modulates a first light output through the first end of the distributed feedback laser, and an optical detector provides detection of a second light output through the second end of the module. The optical detector is formed opposite to the second end of the distributed feedback laser on the semiconductor substrate. A first inner window permits attenuation of the intensity of the second light and electrically insulates the distributed feedback laser and the optical detector from each other, with the first inner window being arranged between the distributed feedback laser and the optical detector.

Abstract: A spool for winding an optical fiber includes flanges attached to each other using an ultrasonic fusion splicer. The spool has first and second cylindrical barrels, on which the optical fiber is wound. The flanges have a disk shape and protrude radially from the first and second cylindrical barrels so as to restrict the winding area of the optical fiber. Ultrasonic fusion splicing points form along a junction by engaging the first and second cylindrical barrels in an axial direction so as to face each other, locating a head of an ultrasonic fusion splicer on the junction and generating an ultrasonic wave from the head to the junction so as to fusion splice the first and second flanges together.

Abstract: A Raman optical amplifier includes a fiber amplifier for Raman-amplifying an input optical signal to form a primarily-amplified optical signal, and a semiconductor optical amplifier for outputting a Raman pumping light of a predetermined wavelength adapted to Raman-pump the fiber amplifier, while amplifying the primarily-amplified optical signal to form a secondarily-amplified optical signal.

Abstract: A bidirectional WDM self-healing ring network is provided and includes an outer ring network and an inner network for processing N units of optical signals and for performing a protection switching by using the outer ring network when the inner ring network suffers a link failure.

Abstract: A monolithic integrated semiconductor optical element is disclosed. The semiconductor optical element including a substrate, a first waveguide, formed on the substrate, including a first active layer for generating light, and a semi-insulating, grown on the substrate so as to surround a perimeter of the first waveguide layer, including a window area for diffusing the light outputted from the first waveguide and outputting the diffused light. The semiconductor optical elements also includes at least one second waveguide, formed in the window area close to the first waveguide, including a second active layer for detecting a part of the light diffused by the window area.

Abstract: A WDM bidirectional self-healing optical ring network is provided in which an outer ring network and an inner ring network can both handle N optical signals. The network includes a node; an optical add/drop multiplexer having a 1×N demultiplexer and a 1×N multiplexer; a pair of optical switching devices each connected to an optical fiber link intervening between the optical add/drop multiplexer and another node on the both ends of the optical add/drop multiplexer; and, a pair of circulators each connected between the optical add/drop multiplexer and a particular optical switching device in the optical switching device pair, each circulator having three ports, two of the three ports being connected to a corresponding optical switching device and remaining one port being connected to the optical add/drop multiplexer.

Abstract: An optical fiber for long-distance optical communication networks has a zero dispersion wavelength value in the range of 1560 to 1570 nm and a dispersion gradient value, at a wavelength band of 1550 nm, in the range of 0.055 to 0.075 ps/nm2/km.

Abstract: An optical fiber includes a core as a light signal transmission medium, a clad surrounding the core, a first coating layer which surrounds the clad and is formed of an UV-cured polymer material, and a second coating layer which surrounds the first coating layer and is formed of an UV-cured polymer material. The difference between the refraction index of the first coating layer and that of the second coating layer ranges from 0 (excluding 0) to 0.06.

Abstract: An optical fiber for an optical network is disclosed. The optical fiber includes a core having a core region having a first refractive index N1, and a refractive index depressed region surrounding the core region and having a second refractive index N2 that is lower than the first refractive index. A clad surrounds the core and having a third refractive index N4. The optical fiber has a zero-dispersion wavelength that is not less than 1555 nm and positioned in a wavelength range which does not exceed L-band. The optical fiber has negative dispersion values in C-band and positive dispersion values in L-band.