Abstract: The present invention is directed to a structure for packaging electronic devices, such as semiconductor chips, in a three dimensional structure which permits electrical signals to propagate both horizontally and vertically. The structure is formed from a plurality of assemblies. Each assembly is formed from a substrate having disposed on at least one surface a plurality of electronic devices. Each assembly is disposed in a stack of adjacent assemblies. Between adjacent assemblies there is an electrical interconnection means electrically interconnecting each assembly. The electrical interconnection means is formed from an elastomeric interposer. The elastomeric interposer is formed from an elastomeric material having a plurality of electrical conductors extending therethrough, either in a clustered or un-clustered arrangement. The electrical interconnection means is fabricated having a plurality of apertures extending therethrough.

Abstract: The present invention concerns a multilayered structure comprising copper-oxide perovskite material having strained crystallographic lattices and altered superconductive properties. The multilayer structure of the invention comprises at least one first layer of a first copper-oxide material and at least one second layer of a second, different copper-oxide perovskite material. The first and second layers are adjacent to one another in an epitaxial lattice-distortion relationship. The first and second copper-oxide perovskite materials in unstressed bulk states define respectively first and second comparison nondistorted crystallographic lattice structures. The first and second comparison nondistorted crystallographic lattice structures have unit cell dimensions which differ in at least one dimension. The first copper-oxide perovskite material in the first layer has a first crystallographic lattice structure which is distorted relative to the first comparison nondistorted crystallographic lattice structure.

Abstract: Proposed is a method for operating a field-effect device comprised of a superconducting current channel having source and drain electrodes connected thereto, said superconducting current channel being separated from a gate electrode by an insulating layer, where the resistance of said current channel is controlled by varying the critical current of the superconducting material through the application of an electrical field across the superconducting current channel, which in turn changes the density of the mobile charge carriers in the superconducting material. Taught is also an inverted MISFET device for performing that method, the device being characterized in that on an electrically conductive substrate an insulating layer is provided which in turn carries a layer consisting of a superconducting material, and that a gate electrode is attached to said substrate, and source and drain electrodes are electrically connected to said superconductor layer.

Abstract: The objects of this invention are accomplished by rearranging the DCT process such that non-trivial multiplications are combined in a single process step. In particular, the DCT equations for the application of the two-dimensional DCT process on k.times.k points are factored into 1) a permutation matrix, 2) a diagonal matrix, and 3) a matrix whose product with an arbitrary vector having k.sup.2 points requires considerably fewer non-trivial multiplications. Furthermore, in some cases none of these non-trivial multiplications are nested; that is, no output of a non-trivial multiplication is ever involved in another multiplication operation. The diagonal matrix is not unique for any set of data. Once the diagonal matrix elements are chosen the remaining factors are developed. When the factorization is complete, the diagonal matrix is absorbed into the quantization step which follows the DCT process. The quantization step is the multiplication of a diagonal matrix by the DCT output data.

Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of recitfying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

Abstract: An optical subassembly for transferring light between an optoelectronic converter and an optical fiber where the housing and the lens are of plastic in which the housing is made to dimensions within the precision of molded plastic and the lens imparts focusing properties that compensate for the limitations of the plastic technology. Alignment in the X-Y plane only is employed. The lens has a first surface focused on the optoelectronic converter which substantially collimates the light through the lens and a second surface that introduces deliberate longitudinal spherical aberration that compensates for component position. Attachment or fixing of the optoelectronic converter to the housing is accomplished by RF heating a TO can to quickly cure an epoxylayer.

Abstract: A method for completely characterizing coupled transmission lines by short-pulse propagation is described. The complex frequency-dependent propagation matrix, impedance matrix and admittance matrix for a set of n parallel transmission lines can be determined by comparing the properties of two sets of coupled transmission lines of different length. Each transmission line set has two conductors of unequal length and ground conductors to form a coupled transmission line system. Each transmission line set can have uncoupled ends. An input pulse is provided at at least one node of each transmission line set. The complex frequency dependent propagation matrix of each transmission line set is determined by a comparison of the output pulses at the remaining nodes of each transmission line set which involves ratioing to cancel out the effect of the pad-to-probe discontinuity and the uncoupled ends which make it unnecessary to do any embedding.

Abstract: A computing system is described having an automated management system for managing keys to encrypt and decrypt stored data on the computing system. The computing system has an authentication server; a key client; a key generator; a key server; a key database; and an encrypted data file memory. The authentication server authenticates the user and in response to the user accessing the computing system the authentication server provides the user with a ticket validating the user. The key client of a creating user when creating a data file invokes the generator to generate a key corresponding to the data file. The key is provided to the key server and the key client uses the key to encrypt the data file which is stored in the encrypted data file memory. The key client of an accessing user sends its ticket and data file identification data to the key server. The key server checks the ticket and sends the key corresponding to the data file to the key client of the accessing user.

Abstract: A three dimensional packaging architecture for ultimate high performance computers and methods for fabricating thereof are described. The package allows very dense packaging of multiple integrated circuit chips for minimum communication distances and maximum clock speeds of the computer. The packaging structure is formed from a plurality of subassemblies. Each subassembly is formed from a substrate which has on at least one side thereof at least one integrated circuit device. Between adjacent subassemblies there is disposed a second substrate. There are electrical interconnection members to electrically interconnect contact locations on the subassembly to contact locations on the second substrate. The electrical interconnection members can be solder mounds, wire bonds and the like. The first substrate provides electrical signal intercommunication between the electronic devices and each subassembly. The second substrate provides ground and power distribution to the plurality of subassemblies.

Abstract: A method for making an optical fiber transmission apparatus for limiting the optical modes which were emitted from a source in such a way to impinge on an optical fiber to extract a high bandwidth from the fiber. The apparatus includes a lens or aperture to control the angle and distribution of light launched into the fiber. The apparatus achieves reproducibly high bandwidths in large core step-index optical fibers of short transmission length distances. The lens or aperture introduces light from the source into the fiber at an angle at which substantially no intermode delay occurs as the light propagates down the fiber. An integral fiber optic coupling assembly that includes an optical electronic component receptacle, the lens and/or aperture, and an optical fiber connector interface which provides low cost easy to manufacture assembly is also disclosed. A unitary plastic housing provides the function of a lens and mechanical reference or locating features for the light source and optical fiber.

Abstract: A process of providing an external wiring and connecting package for a semiconductor chip wherein the chip is a major contributor to the strength of the package. External contacts and wiring are provided by a multilayer wiring member that may include a mesh ground plane with embedded power bus layer over a conductor layer for expansion mismatch control and impedance control, a protective encapsulation covers the bonds from the wiring conductors to the chip, and external contact connections employ fused metal through the contact members.

Abstract: Electrical interconnection structures are described. The electrical interconnection structures are formed by electrically interconnecting in a stack a plurality of discrete substrates. By using a plurality of discrete substrates, a multilayer dielectric/electrical conductor structure can be fabricated from individual discrete substrates each of which can be tested prior to forming a composite stack so that defects in each discrete substrate can be eliminated before inclusion into the stack. Electrical interconnection between adjacent substrate is provided by an array of contact locations on each surface of the adjacent substrates. Corresponding contacts on adjacent substrates are adapted for mutual electrical engagement. Adjacent contact locations can be thermocompression bonded. To reduce the parasitic capacitance and coupled noise between the contact pads and the electrical conductors within the interior of each discrete substrate, the contact pads on each substrate have elongated shape.

Abstract: An image projection system for all surfaces of a three dimensional object such as a polyhedron in which direct and angle reflected image patterns are projected from superpositioned non-overlapping mask patterns mounted on different levels where the separation of the levels is related to the size of the object. The apparatus and process permits simultaneous photolithigraphic printing of conductors on the top and all sides of a cube shaped stack of integrated circuit chips.

Abstract: Superconducting transition metal oxide films are provided which exhibit very high onsets of superconductivity and superconductivity at temperatures in excess of 40.degree. K. These films are produced by vapor deposition processes using pure metal sources for the metals in the superconducting compositions, where the metals include multi-valent nonmagnetic transition metals, rare earth elements and/or rare earth-like elements and alkaline earth elements. The substrate is exposed to oxygen during vapor deposition, and, after formation of the film, there is at least one annealing step in an oxygen ambient and slow cooling over several hours to room temperature. The substrates chosen are not critical as long as they are not adversely reactive with the superconducting oxide film. Transition metals include Cu, Ni, Ti and V, while the rare earth-like elements include Y, Sc and La. The alkaline earth elements include Ca, Ba and Sr.

Abstract: Substrates are activated for subsequent metallization by contacting the substrate with a electrolyte in which reducing agents which are electrochemically generated in the electrolyte. The reducing agents are sorbed by the substrate which is contacted with a seeding medium to dispose on the substrate seed, preferably palladium seed for subsequent electroless and electrolytic metallization.

Abstract: A method for making layered structures of artificial high T.sub.c superconductor compounds by which on top of a seed crystal having a lattice structure matching the lattice structure of the superconductor compound to be made, oxide layers of all constituent components are epitaxially grown in a predetermined sequence so as to create a sandwich structure not found in natural crystals. The epitaxial deposition of the constituent components is performed in a reaction chamber having evaporation facilities, inlets for metal-organic gases, and inlets for background gases including oxygen.

Abstract: Data to be recorded on a magnetic disk is binary encoded including standard error control coding. The data is divided into contiguous blocks and mapped into a sequence of complex numbers according to a predetermined set of coding rules. The mapped data is then recorded on the odd and even tracks on the disk in substantially orthogonal assignments. The orthogonalization technique is used to reduce if not avoid entirely off track interference. Where it is desired to read data from an even track but the head infringes on one of its odd neighbors, the head reads a slightly weaker signal from the desired even track, because the head is not completely over it, and a weak signal from the neighboring odd track. The interfering signal from the odd track does not appear as noise in the even entries of the post inverse Fourier transform sequence, which is used for decoding.

Abstract: A field-effect structure formed on a substrate and comprising a channel with source and drain as well as a gate that is separated from the channel by an insulating layer. The channel is made of a high T.sub.c metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10.sup.21 /cm.sup.3 and a correlation length of about 0.2 nm. The channel thickness is preferrable in the order of 1 nm. The superconductor is preferably a single crystalline and oriented such that the superconducting behavior is strongest in the plane parallel to the substrate. With a signal of a few volts applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between a "zero resistance" (undepleted, superconducting) state and "very high resistance" (depleted state).

Abstract: A semiconductor chip package wherein the chip is a major contributor to the strength of the package. External contacts and wiring are provided by a multilayer wiring member that has a mesh ground plane with embedded power bus layer over a conductor layer for expansion mismatch control and impedance control, a protective encapsulation covers the bonds from the wiring conductors to the chip, and external contact connections employ fused metal through the contact members.

Abstract: Gold can be selectively deposited onto a catalytically-activated region on a surface of a workpiece in the presence of a catalytically-inactive region on the surface by a chemical vapor deposition method. The method involves placing the workpiece in a vacuum chamber and evacuating the vacuum chamber to a base pressure equal to or less than a catalyst-activity-preserving upper pressure limit to eliminate effectively gaseous catalyst-deactivating contaminants from the chamber. The surface composition of at least one region of a target surface of the workpiece is altered to produce a catalytically-activated region on the target surface. At least one region of the target surface disjoint from the catalytically-activated region is a catalytically-inactive region. A gaseous alkylated (trialkylphosphine)gold compound is introduced into the vacuum chamber to expose the target surface of the workpiece to the compound.