Abstract: A disordered multicomponent MgNi based electrochemical hydrogen storage material having a microstructure including a substantial volume fraction characterized by intermediate range order and exhibiting extraordinarily high storage capacity and methods of fabricating same.

Abstract: A method of growing an epitaxial like, single crystal, superconducting film by promoting the epitaxial-like growth of film from a single nucleation site in deference to substantially all other nucleation sites on the substrate. The present invention contemplates the use of a mask to systematically expose sections of the substrate to the deposition apparatus. This mask may include an adjustable or fixed aperture and is manipulated as herein described to systematically expose areas of the substrate to the deposition apparatus.

Abstract: A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.

Abstract: A phase change optical recording medium which includes 1) a substrate having a planar surface; and 2) a plurality of discrete data recording points deposited upon the substrate. The discrete data recording points are formed from a phase change material which changes from a state of a first relative order to a state of a second relative order and visa versa upon the application of optical beam energy. Preferably the phase change material forming the plurality of discrete data recording points is deposited within individual cavities embossed into the surface of the substrate. More preferably the individual cavities are cylindrical or parabolic (bowl shaped) cavities having their central axis perpendicular to the plane of the surface of the substrate.

Abstract: A disordered positive electrode for use in an alkaline rechargeable electrochemical cell comprising: a solid solution nickel aluminum hydroxide material having a multiphase structure. This solid solution nickel hydroxide material is a multiphase structure that comprises at least one microcrystalline .alpha.-phase material. Phase stabilizers and conductivity enhancers can be included to further stabilize the material.

Abstract: A first aspect of the present invention is an improved microwave vacuum feed-through device for coupling microwave energy from a microwave wave guide in a substantially atmospheric pressure region into an elongated linear microwave applicator in a sub-atmospheric pressure region. The improved feed-through is designed to match the impedance of the microwave wave guide in the atmospheric pressure region and the improved linear microwave applicator. A second aspect of the present invention is an improved linear microwave applicator for uniformly coupling 95% or more of the microwave energy input thereto into an elongated plasma zone. The applicator includes curved microwave reflector panels which are used to tune the uniformity of the radiated microwave energy along the length of the linear applicator. A third aspect of the present invention is a microwave enhanced chemical vapor deposition method for depositing thin film material.

Abstract: A microwave plasma enhanced PVD/CVD apparatus and method. The apparatus includes an evacuable deposition chamber having a plasma region and a deposition region adjacent one another. The apparatus also includes a source of microwave energy, and a microwave waveguide to transfer microwave energy from the source thereof to the plasma region. Additionally, the apparatus includes a plate, crucible or boat for holding solid or liquid starting materials within said plasma region, and a system of flow controllers and gas transport tubing for introducing gaseous materials into the plasma region, the interaction of the microwave energy with the gaseous materials forms a plasma within the plasma region. The plasma provides thermal energy for the evaporation of the solid or liquid starting materials and causes the reaction of any reactive gases or vapors present in the plasma region.

Abstract: A sealed prismatic metal hydride battery greater than 10 Ah in size comprising a battery case of high thermal conductivity; and at least one bundle of metal hydride electrodes of high thermal conductivity in thermal contact with said battery case. Batteries according to the invention prevent the accumulation of heat that can damage nickel metal hydride batteries particularly during overcharge.

Abstract: Non-uniform heterogeneous powder particles for electrochemical uses, and said powder particles comprising at least two separate and distinct hydrogen storage alloys selected from the group consisting of: Ovonic LaNi.sub.5 type alloys, Ovonic TiNi type alloys, and Ovonic MgNi based alloys.

Abstract: A solid state battery comprising a substrate; at least one multilayered electrochemical cell deposited onto the substrate, each layer of the multilayered electrochemical cell composing: a layer of negative electrode material capable of electrochemically adsorbing and desorbing ions during charge and discharge; a layer of positive electrode material capable of electrochemically desorbing and adsorbing ions during charge and discharge; and a layer of insulating/conducting material disposed between the layer of positive electrode material and the layer of negative electrode material, where the layer of insulating/conducting material is electrically insulating and capable of readily conducting or transposing ions from the layer positive electrode material to the layer of negative electrode material while the battery is charging and from the layer of negative electrode material to the layer of positive electrode material while the battery is discharging; and an electrically conductive layer deposited a top the las

Abstract: A logic family employing a plurality of two-terminal chalcogenide switches as logic gates therein. Preferably the two-terminal chalcogenide switches are chalcogenide threshold switches. The logic can employ multi-phase clocking such as four-phase clocking.

Abstract: A disordered electrochemical hydrogen storage alloy comprising:(Base Alloy).sub.a Co.sub.b Mn.sub.c Fe.sub.d Sn.sub.ewhere the Base Alloy comprises 0.1 to 60 atomic percent Ti, 0.1 to 40 atomic percent Zr, 0 to 60 atomic percent V, 0.1 to 57 atomic percent Ni, and 0 to 56 atomic percent Cr; b is 0 to 7.5 atomic percent; c is 13 to 17 atomic percent; d is 0 to 3.5 atomic percent; e is 0 to 1.5 atomic percent; and a+b+c+d+e=100 atomic percent.

Abstract: An electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within the dynamic range in response to selected electrical input signals so as to provide the single cell with multibit storage capabilities, and (3) the ability of at least a filamentary portion to be set, by the selected electrical singal to any resistance value in the dynamic range, regardless of the previous resistance value of the material. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range.

Abstract: Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and an increased thermal stability of data retention. The memory element includes a volume of memory material which is a transition metal modified chalcogen. The transition metal may be selected from the group consisting of Nb, Pd, Pt and mixtures or alloys thereof. The memory material may further include at least one transition metal selected from the group consisting of Fe, Cr, Ni and mixtures or alloys thereof. The memory element exhibits orders of magnitude higher switching speeds at remarkably reduced switching energy levels.

Abstract: The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the singIe cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material.

Abstract: A positive electrode material for use in electrochemical cells. This material comprises particles of positive electrode material including at least one electrochemically active hydroxide and a substantially continuous, uniform, encapsulant layer surrounding the particles of positive electrode material. The encapsulant layer is formed from a material which, upon oxidation during processing or during charging of the electrode, is convertible to a highly conductive form, and which, upon subsequent discharge of the electrode, does not revert to its previous form. Preferably, the electrochemically active hydroxide includes at least nickel hydroxide. The encapsulant layer is preferably formed from at least cobalt hydroxide or cobalt oxyhydroxide. This layer is formed on the particles of positive electrode material by precipitation from a cobalt salt solution, which can be a cobalt sulfate solution. Also disclosed are positive electrodes including the material and a precipitation method of forming the material.

Abstract: A solid state battery comprising a substrate; at least one multilayered electrochemical cell deposited onto the substrate, each layer of the multilayered electrochemical cell composing: a layer of negative electrode material capable of electrochemically adsorbing and desorbing ions during charge and discharge; a layer of positive electrode material capable of electrochemically desorbing and adsorbing ions during charge and discharge; and a layer of insulating/conducting material disposed between the layer of positive electrode material and the layer of negative electrode material, where the layer of insulating/conducting material is electrically insulating and capable of readily conducting or transporting ions from the layer positive electrode material to the layer of negative electrode material while the battery is charging and from the layer of negative electrode material to the layer of positive electrode material while the battery is discharging; and an electrically conductive layer deposited a top the la

Abstract: An electrochemical hydrogen storage material comprising:(Base Alloy).sub.a M.sub.bwhere, Base Alloy is an alloy of Mg and Ni in a ratio of from about 1:2 to about 2:1, preferably 1:1; M represents at least one modifier element chosen from the group consisting of Co, Mn, Al, Fe, Cu, Mo, W, Cr, V, Ti, Zr, Sn, Th, Si, Zn, Li, Cd, Na, Pb, La, Mm, and Ca; b is greater than 0.5, preferably 2.5, atomic percent and less than 30 atomic percent; and a+b=100 atomic percent. Preferably, the at least one modifier is chosen from the group consisting of Co, Mn, Al, Fe, and Cu and the total mass of the at least one modifier element is less than 25 atomic percent of the final composition. Most preferably, the total mass of said at least one modifier element is less than 20 atomic percent of the final composition.

Abstract: A current collection system for photovoltaic cells. The collection system includes at least one conductive wire; and a plurality of conductive fibers or filaments in contact with the conductive wire and in contact with the photovoltaic cell. The fibers or filaments collect current generated by the photovoltaic cell and conduct the current to the conductive wire, which wire in turn collects current form all of the plurality of fibers or filaments and conducts the current to the major bus bars and terminals.the major bus bars and terminals.

Abstract: A multi-chambered deposition apparatus for depositing solid-state, thin-film battery materials onto substrate material. The apparatus minimally includes at least three distinct evacuable deposition chambers, which are physically interconnected in series. The first deposition chamber is adapted to deposit a layer of battery electrode material having a first polarity onto the substrate. The second deposition chamber is adapted to deposit a layer of solid-state electrolyte material onto the layer of battery electrode material deposited in the first chamber. The third deposition chamber is adapted to deposit a layer of battery electrode material having an opposite polarity from that deposited in the first chamber onto the solid-state electrolyte. The deposition chambers are interconnected by gas gates such that the substrate material is allowed to proceed from one deposition chamber to the next, while maintaining gaseous segregation between the chambers.