Patents Represented by Attorney Douglas A. Lashmit
  • Patent number: 7818581
    Abstract: A data management system and method are provided. Specifically, the present invention includes a system for controlling access to data and ensuring that the confidentiality of the data maintained. In addition, the present invention provides a system for updating data so that confidential data, which has become non-confidential, can be identified and exposed.
    Type: Grant
    Filed: April 28, 2008
    Date of Patent: October 19, 2010
    Assignee: International Business Machines Corporation
    Inventors: Francis M. Lacan, Ronald Perez, Michael I. Shub, Charles P. Tresser
  • Patent number: 7716142
    Abstract: A system for calculating a special wholesale pricing between a wholesaler and a reseller for a transaction between the reseller and an end-user. A wholesale discount pricing system is provided that comprises: a system for inputting a special pricing request from a reseller, wherein the special pricing request includes a product identifier and an end-user discount the reseller intends on applying to the transaction with the end-user; a product mapping system that maps the product identifier to a set of pricing parameters; and a calculation system that calculates the special wholesale pricing based on the set of pricing parameters and the inputted end-user discount.
    Type: Grant
    Filed: May 22, 2008
    Date of Patent: May 11, 2010
    Assignee: International Business Machines Corporation
    Inventor: Glenn W. Melzer
  • Patent number: 7658380
    Abstract: A system and method for adaptive and predictive analysis of sensor readings to track documents in a document processing system. The system comprises: a plurality of sensors for sensing a document, wherein each sensor includes an associated filtering system for filtering sensor readings, and a performance tracking system for collecting performance data; and a control system that and adjusts filtering characteristics of the filtering system based on the collected performance data. In addition, a correlation system is provided for using data from at least one upstream sensor to interpret an ambiguous downstream sensor signal.
    Type: Grant
    Filed: June 3, 2005
    Date of Patent: February 9, 2010
    Assignee: International Business Machines Corporation
    Inventors: Michael A. Duncan, Rodney G. Moon, Clair F. Rohe
  • Patent number: 7522761
    Abstract: A system and method for detecting a streak in a JPEG image. A system is provided that includes an extraction system for extracting a DC value from each cell block in the compressed image; an identification system for identifying a peak DC value in each rank of cell blocks within the compressed image; and an analysis system for analyzing the peak DC values to determine if a streak exists in the compressed image.
    Type: Grant
    Filed: September 2, 2005
    Date of Patent: April 21, 2009
    Assignee: International Business Machines Corporation
    Inventors: Ravinder Prakash, Madhura Sathe
  • Patent number: 6715670
    Abstract: A system and method and programmed product interactively monitors the amount of cash present in a teller cash drawer while reducing the data input requirements of the teller. It allows a teller to comply with a consumers request for specific denominations while at the same time minimizing premature depletion of specific denominations of money. It corrects situations where a denomination is not an integral multiple of the next lower denomination thereby allowing a mix to be determined even when a lower denomination is depleted. The system and method including a programmed computer process presents a miscellaneous dialog field to a teller for handling commemorative and unusual denominations and the method allows dispensing from this amount as well as from the usual denominations.
    Type: Grant
    Filed: April 19, 2000
    Date of Patent: April 6, 2004
    Assignee: International Business Machines Corporation
    Inventors: Edward Raymond Swiatek, Stephen Wesley Linn
  • Patent number: 4843330
    Abstract: An electron beam system and method for testing three dimensional networks of conductors embedded in an insulating material specimen without physical contact to detect open and short circuit conditions. Top to top surface wiring is tested by irradiating the specimen with an electron beam at a first beam potential to charge the specimen while negatively biasing a grid placed above the specimen surface, and then irradiating selected portions of the specimen with an electron beam at a second beam potential to read the charge on selected conductors while applying a zero or a positive bias to the grid. In one embodiment the charge beam is a focused scanning beam and the first beam potential is preferably greater than the second beam potential.
    Type: Grant
    Filed: October 30, 1986
    Date of Patent: June 27, 1989
    Assignee: International Business Machines Corporation
    Inventors: Steven D. Golladay, Fritz J. Hohn, Hans C. Pfeiffer
  • Patent number: 4816754
    Abstract: Substrates are tested by conductive, individually plug replaceable, buckling beam probes in a probe pattern to engage the circuitry on the substrate. When probes engage the substrate, they buckle as a given engaging force is exceeded. Each probe socket is adapted to releasably retain a probe inserted in its socket. The probes and the probe sockets are axially mounted in a probe housing. A probe in a socket has a first end oriented to engage the circuitry and a second end is releasably engaged in a sleeve in its socket. the probe pattern is displayed radially. Guides have guide pins mounted in the probe housing. The pins cooperate with companion guide ways with contours such as slots. The guide ways in the substrate engaging member, and an actuator move the substrate engaging member relative to the guide pins along the contours of the guide ways.
    Type: Grant
    Filed: April 29, 1986
    Date of Patent: March 28, 1989
    Assignee: International Business Machines Corporation
    Inventors: Alvin W. Buechele, Thomas J. Cochran, Philo B. Hodge
  • Patent number: 4758528
    Abstract: A method of forming on a substrate a pattern of structures having a thickness on the order of one micron or less. A first insulating layer is formed on a major surface of a substrate, for example, a silicon body. A polycrystalline silicon layer is formed thereover and openings are formed therein by reactive ion etching to provide substantially horizontal surfaces and substantially vertical sidewalls. The vertical sidewalls of the openings are formed at the desired locations of the narrow dimensioned structures. A second, conformal insulating layer is then formed followed by a reactive ion etching step which substantially removes the horizontal portions of the second insulating layer. The remaining polycrystalline silicon layer is removed to leave a pattern of self-supporting narrow dimensioned dielectric regions on the major surface of the substrate. The narrow dimensioned dielectric regions can be used as a mask to form narrow structures in the substrate.
    Type: Grant
    Filed: April 24, 1986
    Date of Patent: July 19, 1988
    Assignee: International Business Machines Corporation
    Inventors: George R. Goth, Ingrid E. Magdo, Shashi D. Malaviya
  • Patent number: 4737644
    Abstract: An electrostatic deflection plate for charged particle beam systems is formed of a planar semiconductive substrate having a conductive region at the substrate surface. The conductive region is diffused or implanted into the body of the substrate, or one or more conductive layers are deposited upon the substrate surface. The substrate material is preferably silicon and the diffused or implanted region is formed of a nonmagnetic, nonoxidizable metal such as gold or platinum. The deposited conductive region may be formed of a single layer of these or similar metals, one or more conductive underlayers with a nonmagnetic, nonoxidizable overlayer, a single or multilayer structure with a conductive oxide on the outermost layer, or a metallo-organic compound which forms a conductive layer during following heat treatment. The deflection plates are fabricated using conventional semiconductor processes and form durable structures which minimize eddy current effects.
    Type: Grant
    Filed: October 30, 1985
    Date of Patent: April 12, 1988
    Assignee: International Business Machines Corporation
    Inventors: Douglas G. Cullum, George J. Giuffre, Timothy R. Groves, Werner Stickel, Maris A. Sturans
  • Patent number: 4691219
    Abstract: An integrated bipolar transistor having a self-aligned polysilicon base contact is formed by depositing a first doped polysilicon layer and a silicon nitride passivating layer on the surface of a semiconductor substrate having an isolated collector region therein. An opening is formed in the first polysilicon and silicon nitride layers over the collector to expose the surface of the semiconductor substrate. The base region is formed through the opening and a conformal silicon nitride coating is then deposited on the wall of the opening and over the surface of the semiconductor substrate within the opening. A second polysilicon layer is formed on the silicon nitride passivating layer. The second polysilicon layer is reactive ion etched, leaving a polysilicon sidewall on the wall of the opening while removing the rest of the second polysilicon layer. The polysilicon sidewall is then oxidized, and an emitter is formed through the opening.
    Type: Grant
    Filed: March 24, 1986
    Date of Patent: September 1, 1987
    Assignee: International Business Machines Corporation
    Inventor: George R. Goth
  • Patent number: 4671849
    Abstract: A method for precisely controlling the profile of an opening etched in a layer of material, for example, an insulating layer. In one embodiment, wherein a silicon dioxide layer is reactive ion etched through a photoresist mask, the concentration of a reactive species in an etchant gas is changed during the etching process to change the slope of the opening, the upper sidewall portion of the opening having a shallow slope and the lower sidewall portion of the opening having a steep slope. The final slope of the opening formed by this method is independent of the initial slopes of the images developed in the photoresist mask.
    Type: Grant
    Filed: May 6, 1985
    Date of Patent: June 9, 1987
    Assignee: International Business Machines Corporation
    Inventors: Lee Chen, Gangadhara S. Mathad
  • Patent number: 4663742
    Abstract: A directory memory system including a plurality of reconfigurable subarrays of memory cells and having the capability of simultaneously performing write/compare, read/compare, compare/bypass, write/bypass, or write/compare/bypass operations. The present system may be fabricated on a single integrated circuit chip and includes circuitry for selectively writing data into the subarrays. Output data from the subarrays is connected to compare data logic for comparing the subarray data to one or more bytes of compare input data, and to bit select logic for selectively placing the subarray data onto an output bus. Bypass select logic causes either the subarray data or one byte of compare data to be output from the memory system data output port. In one embodiment, two bytes of compare input data can be simultaneously compared with a selected data byte from each of the subarrays, and one byte of compare input data can be bypassed to the data output port during the compare operation.
    Type: Grant
    Filed: October 30, 1984
    Date of Patent: May 5, 1987
    Assignee: International Business Machines Corporation
    Inventors: John E. Andersen, Robert L. Barry, Kenneth H. Christie, Dennis J. Shea
  • Patent number: 4643627
    Abstract: A vacuum transfer device includes a central processing chamber and a plurality of additional chambers radially positioned around the central chamber and in vacuum-tight connection therewith. A rotatable coulisse arrangement in the central chamber is extendable so as to reach into the additional chambers when correctly aligned. The device can transfer objects among several work stations without intermediate venting and re-evacuation of the system of chambers.
    Type: Grant
    Filed: October 2, 1985
    Date of Patent: February 17, 1987
    Assignee: International Business Machines Corporation
    Inventors: Johannes G. Bednorz, Pierre L. Gueret, Hermann E. Nievergelt, Hanspeter Ott, Wolfgang D. Pohl, Daniel F. Widmer
  • Patent number: 4640221
    Abstract: A system and method for forming a uniform layer of a material from a vapor phase onto the surface of an object at a high rate of deposition includes a heated reservoir for vaporizing the material to be deposited, a reactor containing the objects to be coated, and a vacuum device for flowing the gaseous material from the reservoir to the reactor. The mass flow rate of the gas from the reservoir is held constant by precisely controlling the pressure at the outlet of the reservoir and at the inlet of the reactor. In one embodiment the upstream pressure is controlled by a valve responsive to a pressure sensor at the reservoir outlet, and the downstream pressure is controlled by adjusting the vacuum in the reactor as measured by a pressure sensor at the reactor inlet.
    Type: Grant
    Filed: October 30, 1985
    Date of Patent: February 3, 1987
    Assignee: International Business Machines Corporation
    Inventors: Steven G. Barbee, Gregory P. Devine, William J. Patrick, Gerard Seeley
  • Patent number: 4630219
    Abstract: A method for placing a plurality of different size electronic elements having predetermined interconnection requirements thereamong, on a next level electronic package having an array of element placement positions thereon determines optimum placement in a three pass process. In the first pass, all of the elements are treated as if they are the same size, defined as a unit size, and are assigned to element positions on a unit size next level package, then their placement is optimized. These unit size elements are then replaced by macro size elements, which are approximately the actual size of the corresponding electronic elements. The macro size elements are then rearranged for optimal placement on a macro model image, taking their sizes and shapes into account. Finally, the macro size elements are replaced by actual size elements which are placed on an actual size next level package in element positions, and their placement is again optimized. By optimizing element placement in a three pass process, i.e.
    Type: Grant
    Filed: November 23, 1983
    Date of Patent: December 16, 1986
    Assignee: International Business Machines Corporation
    Inventors: Angela DiGiacomo, Kantilal H. Khokhani
  • Patent number: 4630270
    Abstract: A method for identifying the rank of a faulty cell in a chain of cells forming a shift register in a functional element, each cell including a pair of latches acting as master-slave elements having data inputs, clock inputs, and data outputs, each cell being associated with a combinatorial logic block. In one embodiment the location or rank of the faulty cell is determined by placing the faulty functional element in a static mode, applying a square pulse to its data input, observing the output waveform representing variations of input current that occur during propagation of the pulse along the chain, and detecting the absence of these variations, the absence indicating a defective cell just loaded with a data bit. The rank of the faulty cell is determined in one embodiment by comparing the output waveform with that of a known satisfactory functional element, either manually or automatically.
    Type: Grant
    Filed: November 15, 1984
    Date of Patent: December 16, 1986
    Assignee: International Business Machines Corporation
    Inventors: Dominique A. Petit, Marc P. Du Pasquier
  • Patent number: 4608589
    Abstract: A self-aligned metal integrated circuit structure is described which achieves self-aligned metal to silicon contacts and sub-micron contact-to-contact and metal-to-metal spacing. The insulation between the contacts and the metal is a pattern of dielectric material having a thickness dimension in the order of a micron or less. The metal and dielectric structure is substantially planar. The method for forming this structure involves providing a silicon body and then forming a first insulating layer on a major surface of the silicon body. A layer of polycrystalline silicon is formed thereover. Openings are made in the polycrystalline silicon layer by reactive ion etching which results in the structure having substantially horizontal surfaces and substantially vertical surfaces. A second insulating layer is then formed on both the substantially horizontal surfaces and substantially vertical surfaces.
    Type: Grant
    Filed: July 11, 1983
    Date of Patent: August 26, 1986
    Assignee: International Business Machines Corporation
    Inventors: George R. Goth, Ingrid E. Magdo, Shashi D. Malaviya
  • Patent number: 4602981
    Abstract: Plasma potential monitoring during a plasma etching process is accomplished by measuring the RF voltage at an electrode of, for example, a high pressure, high plasma density, symmetric single wafer reactor. The plasma potential is indicative of the plasma density, which has a high sensitivity to secondary electron emission from a wafer surface and yields both process etching endpoint and diagnostic information for a wide variety of processes and process conditions.
    Type: Grant
    Filed: May 6, 1985
    Date of Patent: July 29, 1986
    Assignee: International Business Machines Corporation
    Inventors: Lee Chen, Gangadhara S. Mathad
  • Patent number: 4600464
    Abstract: An improved plasma reactor for uniformly etching a large number of semiconductor wafers at a reduced plasma potential includes, in one embodiment, a grounded plate mounted intermediate the cathode and the top plate of a reactor chamber, the top plate and the chamber walls forming the reactor anode. The grounded plate is spaced apart from the chamber top plate a distance sufficient to allow a plasma to be established between the grounded plate and the top plate, and the distance between the grounded plate and the cathode is large enough not to disturb the field in the proximity of the wafers being etched. The plate can be apertured to facilitate etchant gas flow. According to another embodiment of the invention at least two grounded plates are employed, spaced apart from each other and from the upper surface of the reactor plasma chamber.
    Type: Grant
    Filed: May 1, 1985
    Date of Patent: July 15, 1986
    Assignee: International Business Machines Corporation
    Inventors: Brian H. Desilets, Thomas A. Gunther, Charles J. Hendricks, John H. Keller
  • Patent number: 4581537
    Abstract: A method of forming inspection patterns for inspecting a workpiece, e.g., for electron beam inspection of optical photomasks. The inspection patterns are formed from the workpiece patterns themselves by applying a first positive windage to the workpiece patterns, inverting the first positive windaged workpiece patterns and applying a second positive windage to the inverted first positive windaged workpiece patterns. The inspection patterns so produced will contain the requisite guard band and the requisite overlap of abutting patterns.
    Type: Grant
    Filed: March 23, 1984
    Date of Patent: April 8, 1986
    Assignee: International Business Machines Corporation
    Inventors: Wallace J. Guillaume, John F. Loughran, Jan Rogoyski, Robert A. Simpson, Edward V. Weber