Abstract: A handgun rest suitable for field use includes a shooting platform on which the shooter rests the butt of the handgun grip and both hands. The platform connects to an adjustable extension member or assembly projecting forward from the platform, angling upwards to provide both the required amount of upward rise and forward extension to come under, and provide the rest for, the forearm or barrel of the handgun. Thus the weight of the handgun is supported fore and aft, including the shooter's wrists and arms. The forward extension is folded when not in use, creating a compact and easily transported package. A leg assembly coupled beneath the platform permits both swiveling and canting. The leg assembly includes a pair of movable legs coupled about an axle which engages a bracket movably mounted under the platform. The bracket engages a pivot about which the bracket may rotate, within constraints, relative to the platform.

Abstract: An advanced telephone dialler has been described, incorporating a fast retrieval and dial telephone directory. The system simplifies the use of the telephone directory by using a single sliding or rotary key for scanning and selection of the name and number to be dialled and one button for speed dialling of the selected number. The name and telephone number of the selected person are simultaneously displayed on a character display and a normal telephone keypad has been used for entering both letters for the name and digits for the number into telephone directory's memory. A short cut dialling has been also provided by simply using the sequential order number of the person to be dialled from the telephone directory's memory. An option has been provided for checking the incoming calls numbers with the telephone directory of the system and not only displaying the name of the calling person and its number if they have been found in directory.

Abstract: A driver circuit for driving an active matrix liquid crystal display without producing flicker. The inversion frequency of the voltage applied to the liquid crystal panel of the display is examined, the frequency being intrinsic to the display. The difference between voltages applied to opposite sides of the liquid crystal panel is found from the transmissivity of the liquid crystal material, by making use of an image sensor. The found value is converted into digital form by an analog-to-digital converter and stored in a correcting value storage device. When the active matrix display is in use, the difference signal which is found for each pixel and stored in the storage device is added to an image signal applied to the active matrix display, thus preventing flicker intrinsic to the liquid crystal panel.

Abstract: A mirrored coat rack is wall mountable or door mountable and includes one or more coat hooks affixed to a mirrored member made of mirrored glass, mirrored acrylic, or polished metal. A backing member behind the mirrored member adds stability.

Abstract: A driver circuit for use with an active matrix display. The driver circuit has a shift register circuit of a redundant configuration and consists of a main circuit and a preliminary circuit. When the main circuit becomes defective, the operating circuit is automatically switched from the main circuit to the preliminary circuit without physically cutting the circuitry by a laser beam or the like. The driver circuit is composed of a main shift register circuit and a preliminary shift register circuit connected in parallel with the main shift register circuit. The output from the final stage of flip-flop circuit of the flip-flop circuits forming the main shift register circuit is compared with the output from a monitoring flip-flop circuit connected with the output of the final stage of flip-flop circuit. Thus, the output signals from the flip-flop circuits of the main shift register circuit are switched respectively to the output signals from the flip-flop circuits of the preliminary shift register circuit.

Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

Abstract: In a multiprocessor system with shared resources, which several processors access via a system bus by presenting bus access requests to an arbitration unit and receiving from the latter access grant signals and in which the busy state of a resource or a conflict of consistency determine the generation of a RETRY signal and compel the processor, which has obtained access to the bus, to execute an access RETRY attempt, consecutive repeated access RETRY attempts of the same processor activate logic of the arbitration unit which temporarily mask, for a varying duration, the access requests of the same processor for the execution of further consecutive RETRY attempts, the varying duration first increasing as a function of the number of further RETRY attempts and then varying in a random manner.

Abstract: It is intended to increase the display speed in an active matrix liquid crystal display device. In displaying a moving picture, different voltages are applied in two steps to each pixel, i.e., each liquid crystal cell. More specifically, after a high voltage is applied first, and then a low voltage is applied at a prescribed timing, so that the rising characteristic of the liquid crystal is improved. In a specific configuration, thin-film transistors are provided on both sides of a pair of electrodes between which the liquid crystal is interposed. A voltage for accelerating the liquid crystal operation is applied from one of the two thin-film transistors, and the same voltage as in the case of displaying a still picture is applied from the other thin-film transistor.

Abstract: A glass substrate manufacturing method advantageously applicable to magnetic recording disk glass substrates, LCD glass substrates, photomasks glass substrates, or optical memory glass substrates. The method includes the steps of forming a film of a solution on at least a principal surface of a sheet glass formed using a down-drawing method, the solution containing a water soluble inorganic material and a surface-active agent; sandwiching both sides of a single sheet glass on which the film is formed or of a laminated structure of two or more sheet glasses with a densified sheet with a high flatness to pressure the single glass or laminated structure; and heating and annealing the single sheet glass or laminated structure to flatten the same. The end side of the flatten glass substrate is treated with a treating solution containing a hydrofluosilicic acid.

Abstract: Process for the production of aromatic polyester resins starting from resins with an IV from 0.1 to 0.4 dl/g comprising the steps of blending the resin with a dianhydride of a tetracarboxylic acid, extruding the resin under the form of a strand, cooling the strand or the chips obtainable by cutting the strand, at a temperature between 150.degree. C. and 210.degree. C. and maintaining the same temperature for sufficient time to obtain a crystalline product wherein the DSC curves of the same do not show presence of premelt peaks or only in a negligible amount.

Abstract: The object of the invention is to design for reduction of the effects of thin-film transistor OFF current and to improve image quality in an active matrix display device in which polysilicon thin-film transistors are used.Plural serially connected thin-film transistors are provided for one pixel electrode, different signals are imposed on the gate terminals of respective thin-film transistors, and a signal is written into the pixel when all the serially connected thin-film transistors are in an on state.Further, since the thin-film transistors are connected in series, the voltage imposed on the source and drain electrodes when they are all in an off state is divided, and consequently the voltage across the source and drain electrodes of the thin-film transistor that drives the pixel is smaller and the OFF current is reduced.

Abstract: For use with CVD apparatus, an apparatus and method for detecting the end point of a post treatment after an in-situ cleaning operation is provided such that reactive chemical species which remain after an in-situ cleaning operation can be accurately removed so that they do not cause harm to a film formed after the cleaning operation. The end point detection apparatus includes a reactor, an RF electrode, an RF power supply, a gas supply pipe for forming a thin film, a gas supply pipe for in-situ cleaning, a detector for detecting discharge characteristic values (i.e. the self-bias voltage, the electrode voltage, and the discharge impedance) during the post treatment performed after the in-situ cleaning, and a monitor/determining circuit for monitoring an output from the detector.

Abstract: Articles from a polyester resin reinforced with glass fiber obtained by melt-shaping of the resin mixed with the glass fiber and a polyfunctional compound capable of increasing the intrinsic viscosity of the resin by addition reactions with the end groups of the rein using melt residence times during the shaping phase lower than 120 sec. and temperatures lower than 300.degree. C.

Abstract: A memory suitable for integration having a memory structure where at least one capacitor formed by using a ferroelectric is integrated on a semiconductor device substrate. In a unit cell structure forming the memory, an upper electrode, located at an upper position among electrodes constituting the capacitor, is directly connected to a high density diffusion layer constituting a MOS transistor.

Abstract: Process for the solid state polycondensation of polyamide resins by the use in the polycondensation reactor of a quantity of an inert gas such that the ratio by weight between the solid capacity/h at the reactor outlet and that one of gas fed into the reactor is lower than 0.5.

Abstract: A process for the preparation of polymeric alloys from polyester resins and polymers containing groups capable of giving addition reaction with functional compounds containing at least two reactive groups comprising the melt state mixture stage of polyester resin, reactive polymer and functional compound of mixture pelletizing and following polyaddition reaction in the solid state at temperatures between 150.degree. and 220.degree. C. to obtain an increase of the polymer intrinsic viscosity of 0.1 dl/g in comparison with the starting polyester resin.

Abstract: A light semitransmittable film of a half tone type phase shift mask blank is formed from a thin film comprising a material including oxygen, nitrogen, silicon and a metal as main constitutional components. In this case, the above-mentioned thin film is formed on a transparent substrate by a reactive sputtering process using a mixed target of molybdenum and silicon. At this time, a mixed gas of an inert gas and nitrous oxide is allowed to flow as an atmosphere gas, and the flow rate of the nitrous oxide gas is controlled within the range of 25 sccm or less to adjust the flow rate, whereby transmittance and film thickness can be controlled.

Abstract: A memory device according to the invention has a first pair of bit lines, having first and second bit lines, coupled to a first memory cell which cause a first potential difference between the first and second bit lines; a second pair of bit lines, having third and fourth bit lines, coupled to a second memory cell which causes a second potential difference between the third and fourth bit lines; a first sense amplifier having first and second transistors each of which is a first conductivity type, the gate electrode of said first transistor being connected to said first bit line, the first electrode of the first transistor being connected to the second bit line, the gate electrode of the second transistor being connected to the second bit line, the first electrode of the second transistor being connected to the first bit line; a second sense amplifier having third and fourth transistors each of which is the first conductivity type, the gate electrode of the third transistor being connected to the third bit li

Abstract: There is provided an X-ray mask blank from which an X-ray mask having a remarkably small positional deformation even at a large window size of 50 mm square and a remarkably positional precision can be manufactured. The X-mask blank has an X-ray transparent film on a substrate and an X-ray absorber film on the X-ray transparent film. A product of Young modulus and film thickness of the X-ray transparent film is 6.times.10.sup.8 to 3.times.10.sup.9 dyn/cm.