Abstract: A system that has a system memory controller and a memory module. The memory module includes a memory module controller coupled to the system memory controller and a plurality of memory devices coupled to the memory module controller.
Abstract: A memory module controller for providing interface between a system memory controller and a plurality of memory devices on a memory module. The memory module includes first interface circuitry and control logic. The first interface circuitry is configured to receive from the system memory controller a first memory transaction in a first format. The control logic is coupled to the first interface circuitry and configured to convert the first memory transaction into a second memory transaction in a second format for the plurality of memory devices. The second format of the second memory transaction is different than the first format of the first memory transaction.
Abstract: A memory module that has a plurality of memory devices and a memory module controller configured to receive a memory transaction from a first memory bus and to control access to the plurality of memory devices.
Abstract: Techniques for a processor temperature control interface. In one embodiment, a processor includes a bidirectional interface and output logic to assert a first signal indicating an internal high temperature on the bidirectional interface. Throttling logic throttles operations of the processor if either the internal high temperature is indicated or if an external signal is received on the bidirectional interface.
Type:
Grant
Filed:
March 15, 2002
Date of Patent:
October 18, 2005
Assignee:
Intel Corporation
Inventors:
Robert J. Greiner, Benson D. Inkley, Nathan C. Schultz
Abstract: Methods and apparatuses for mapping cache contents to memory arrays. In one embodiment, an apparatus includes a processor portion and a cache controller that maps the cache ways to memory banks. In one embodiment, each bank includes data from one cache way. In another embodiment, each bank includes data from each way. In another embodiment, memory array banks contain data corresponding to sequential cache lines.
Type:
Grant
Filed:
August 2, 2002
Date of Patent:
October 11, 2005
Assignee:
Intel Corporation
Inventors:
Kuljit S. Bains, Herbert Hum, John Halbert
Abstract: At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.
Type:
Grant
Filed:
May 20, 2004
Date of Patent:
October 11, 2005
Assignee:
Intel Corporation
Inventors:
Mark Doczy, Justin K. Brask, Steven J. Keating, Chris E. Barns, Brian S. Doyle, Michael L. McSwiney, Jack T. Kavalieros, John P. Barnak
Abstract: A cache way replacement technique to identify and replace a least-recently used cache way. A cache way replacement technique in which a least-recently used cache way is identified and replaced, such that the replacement of cache ways over time is substantially evenly distributed among a set of cache ways in a cache memory. A least-recently used cache way is identified in a cache memory having a non-binary number of cache ways.
Type:
Grant
Filed:
June 25, 2002
Date of Patent:
September 27, 2005
Assignee:
Intel Corporation
Inventors:
Todd D. Erdner, Bradley G. Burgess, Heather L. Hanson
Abstract: A bus system comprises a bus, a first bus device on the bus at a first virtual address and at a first physical address on the bus, and a second bus device on the bus at a second virtual address and a second physical address. The bus system further comprises a map of the first and second virtual addresses to the first and second physical addresses, respectively, encoded on a program storage medium. The map is accessible over the bus. The first and second virtual addresses may each be, for example, a guaranteed unique identifier (GUID).
Abstract: A method and apparatus for synchronizing load operations. In one embodiment, an apparatus includes a decode circuit to decode a load fence instruction. An execution unit executes the load fence instruction after it as been decoded by the decode circuit. Furthermore, a control register is included to enable pre-serialization and post-serialization of operations appearing before and after the load fence instruction in program order, respectively.
Abstract: At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.
Type:
Grant
Filed:
December 20, 2002
Date of Patent:
February 22, 2005
Assignee:
Intel Corporation
Inventors:
Mark Doczy, Justin K. Brask, Steven J. Keating, Chris E. Barns, Brian S. Doyle, Michael L. McSwiney, Jack T. Kavalieros, John P. Barnak
Abstract: A replicated server discovery (“RSD”) provides optimal or best-replicated servers to Web users without users' intervention. In one embodiment, the RSD is configured to receive server addresses using Domain Name System (“DNS”) lookup, where the server addresses include replicated server addresses. The RSD further records responses from servers addressed by the server addresses and then sorts the server addresses according to the responses and data types involved in transactions.
Type:
Grant
Filed:
November 18, 1998
Date of Patent:
September 21, 2004
Assignee:
Intel Corporation
Inventors:
Harlharan Kumar, Lakshman Krishnamurthy, Bernard N. Keany, Sanjay Bakshi
Abstract: A method for creating insulated gate field effect transistors having gate electrodes with at least two layers of materials to provide gate electrode work function values that are similar to those of doped polysilicon, to eliminate the poly depletion effect, and to substantially prevent impurity diffusion into the gate dielectric. Depositing bi-layer stacks of relatively thick Al and thin TiN for n-channel FETs and bi-layer stacks of relatively thick Pd and thin TiN, or relatively thick Pd and thin TaN for p-channel FETs is disclosed. Varying the thickness of the thin TiN or TaN layers between a first and second critical thickness may be used to modulate the work function of the gate electrode and thereby obtain the desired trade-off between channel doping and drive currents in FETs.
Type:
Grant
Filed:
February 6, 2002
Date of Patent:
September 14, 2004
Assignee:
Intel Corporation
Inventors:
Jun-Fei Zheng, Brian Doyle, Gang Bai, Chunlin Liang