Abstract: A method and apparatus for manufacturing an integrated circuit (IC), the method including, generating, by a graphical construction unit, a first graph corresponding to a first net of the IC, the first graph representing a pin of the first net as a vertex, and a connection between two pins of the first net as an edge, the first graph further corresponding to a first IC layout; identifying a first and a second pair of unconnected vertices in the first graph for inserting a first and a second redundant edge, respectively, the first redundant edge and the second redundant edge forming a first connected loop and a second connected loop, respectively, each loop further including at least two edges of the first graph; calculating a tolerance ratio for the first redundant edge and the second redundant edge; sorting the first and second redundant edge based on their tolerance ratio; calculating a yield rate change of the first IC layout associated with inserting one of the first or second redundant edge with a highest

Abstract: A roof apparatus includes a movable panel for opening and closing an opening portion adapted to be provided on a roof panel, and a weather strip disposed between an opening edge of the roof panel and the movable panel so as to serve as a sealing between the opening edge and the movable panel. The opening edge of the roof panel includes a flange portion formed to extend vertically downward from a roof panel body of the roof panel. The weather strip includes a base portion accommodating the flange portion of the roof panel inside the base portion. A supporting member mounted on the roof panel and supporting the movable panel includes a holding portion holding the base portion of the weather strip.

Abstract: According to one embodiment, a design layout highly likely to be a dangerous point in a lithography process is set, a coherence map kernel for generating the mask layout is set with respect to the set design layout, the coherence map is created based on the set coherence map kernel and the set design layout, the auxiliary pattern is extracted from the created coherence map and shaped to generate the mask layout, a cost function COST for evaluating an optimization degree of the mask layout is defined, the generated mask layout is evaluated using the cost function, and at least one of parameters of the coherence map kernel and parameters in extracting and shaping the auxiliary pattern from the coherence map are changed until the mask layout evaluated using the cost function is optimized.

Abstract: New inhibitors of the p38 mitogen-activated protein kinase having the general formula (I) are disclosed herein, as well as processes for their preparation, pharmaceutical compositions comprising them, and their use in therapy.

Abstract: A method for local, computer-aided translation using remotely-generated translation predictions includes the step of determining that a translation stored in a remote translation memory is useful in translating a first portion of a local document. A local machine receives the translation of the first portion of the document. The local machine stores, in a local cache, an alternate version of the translation created by a translator. The alternate version of the translation is identified as useful in translating a second portion of the document. The local machine generates a translation of the second portion of the document through reuse of the alternate version of the translation of the first portion of the document, responsive to the received identification of the utility of the alternate version of the translation of the first portion of the document to the second portion of the document.

Abstract: According to one embodiment, a method is disclosed for determining position of an auxiliary pattern on a photomask. The method can include generating a first set for each of three or more imaging positions of an exposure optical system. The method can include generating a second set for each of the three or more imaging positions by inverse Fourier transforming each of the first set. The method can include calculating a second order differential with respect to the imaging position of an index indicating amplitude of light belonging to the second set. In addition, the method can include extracting a position where the second order differential assumes an extremal value on an imaging plane of the exposure optical system. At least part of positions on the photomask each corresponding to the position assuming the extremal value on the imaging plane is used as a formation position of the auxiliary pattern.

Abstract: There is described a network facsimile apparatus, which makes it possible to quickly complete the transmitting operation of reserved image data whose transmission is temporarily suspended due to the BUSY status of the receiver side, etc. The apparatus, serving as a caller that conducts image data communicating operations with other apparatuses serving as callees based on a Session Initiation Protocol, includes a control section to suspend an operation for transmitting image data to the first callee; a storage section to store the first IP address of the first callee; a network interface control section; and a comparing section to compare the first IP address with the second IP address. When the control section determines that the first IP address and the second IP address coincide with each other, the control section transmits the reserved image data, transmission of which is currently suspended, to the second callee.

Abstract: A method and apparatus for processing a Rights Object (RO) are provided. A method for upgrading the RO includes: acquiring, by a Digital Rights Management (DRM) Agent, RO related information of the RO that requires updating from a Secure Removable Media (SRM) Agent; providing, by the DRM Agent, the RO related information to a Rights Issuer (RI), and obtaining a new RO from the RI; and interacting, by the DRM Agent, with the SRM Agent to upgrade the RO that requires updating on the SRM by means of the new RO. According to the embodiments of the present invention, the DRM Agent acquires RO related information which is stored on the SRM and does not have Move rights, and interacts with the RI to move the RO out from the SRM, so as to move the RO without the Move rights out from the SRM, thus extending an application of the RO without the Move rights.

Abstract: This application relates to a process for the production of (2R)-dihydroartemisinic acid or (2R)-dihydroartemisinic acid esters from artemisinic acid or artemisinic acid esters, respectively, by diimine hydrogenation of the exocyclic CC-double bond, and use of said process in the production of the antimalarial drug artemisinin.

Abstract: A communication apparatus includes a radio-frequency transmission-reception processing unit configured to perform radio-frequency processing to a transmitted signal and a received signal; a baseband processing unit configured to perform baseband processing; a signal detecting unit configured to detect a signal from which a signal transmitted from another communication system is detected; and an interference-to-another-communication-system avoiding unit configured to suppress an interfering signal to the other communication system in radio-frequency transmission processing by the radio-frequency transmission-reception processing unit if the signal detecting unit detects a signal.

Abstract: An electrode terminal 42 is connected to a current collector part 12 of electrodes through a deformation restricting member 3. Between laminate films 2 and 2, a space 15 is formed above and below the current collector part 12. The deformation restricting member 3 is placed close to the inner wall peripheral portion of an outer package including sealing parts 23, thereby forming a deformation-restricting part 22 to restrict the inward deformation of the laminated films 2. In a section extending from the inside end of the deformation restricting member 3 to a battery element 1, the laminated films 2 face the space 15 to allow the deformation of the laminated films 2 in response to the change of internal pressure. At the decrease of internal pressure, the contraction of the laminated films 2 can be localized in the deformation-allowing part 21, thereby reducing the bending stress on an end portion of the sealing parts 23.

Abstract: A pin joint includes a pin having a longitudinal axis. A bushing for use with a lateral pin retention system may be positioned around the pin. The bushing includes an arc groove disposed radially about an outer surface of the bushing. A retaining plug for use with the lateral pin retention system includes an engagement head shaped to engage the arc groove and may be attachable to a linkage of a machine.

Abstract: Project management is made easier and more effective by enabling a planner to define project roles for tasks of a project and then, separately search for actual resources that match the project roles.

Abstract: A pattern dimension calculation method according to one embodiment calculates a taper shape of a mask member used as a mask when a circuit pattern is processed in an upper layer of the circuit pattern formed on a substrate. The method calculates an opening angle facing the mask member from a shape prediction position on the circuit pattern on the basis of the taper shape. The method calculates a dimension of the circuit pattern according to the opening angle formed at the shape prediction position.

Abstract: A method for manufacturing semiconductor device has forming a plurality of trenches having at least two kinds of aspect ratios on a semiconductor substrate, filling the plurality of trenches with a coating material containing silicon, forming a mask on the coating material in a part of the trenches among the plurality of trenches filled with the coating material, implanting an ion for accelerating oxidation of the coating material into the coating material in the trenches on which the mask is not formed, forming a first insulating film by oxidizing the coating materials into which the ion is implanted, removing the coating material from the part of the trenches after removing the mask and forming a second insulating film in the part of the trenches from which the coating material is removed.

Abstract: An image processing apparatus includes: a correlation value computing section that computes a correlation value between pixels in a noted image and its preceding and following reference images; a break determining section that determines a break in identical images based on the correlation value between pixels; a successive occurrence counting section that cumulatively counts successive occurrences of identical images as a successive occurrence count, if the noted image is not determined as corresponding to a break; a pattern determining section that determines whether or not the successive occurrence count and a set count match, if the noted image is determined as corresponding to a break; a matching counting section that counts up a matching count if it is determined that the successive occurrence count and the set count match; and a pull-down pattern detecting section that detects a predetermined pull-down pattern if the matching count exceeds a predetermined count.

Abstract: A telephone system comprising a plurality of telephone terminals is provided. The telephone system includes a switching device connected to the telephone terminals via a communication network, and a server device connected to the communication network. The switching device includes a transfer section for transferring a call to a telephone terminal in which a transfer function is set therein to a telephone terminal at a transfer destination. Also, the server device includes a monitor section for monitoring a log-in/log-out state of a user for each of the plurality of telephone terminals. The server also includes a releasing section for releasing the setting of the transfer function on the basis of the result of the monitoring when an operation to the telephone terminal with the transfer function set therein by a log-in user satisfies a defined condition.

Abstract: A new PTEN opener or a new opener of a large conductance Ca2+-activated K+ channel (Maxi-K channel) which comprises as an active ingredient a tetrazolylalkoxy-dihydrocarbostyril compound of the formula (I): wherein R is cycloalkyl, A is lower alkylene, and the bond between 3- and 4-positions of the carbostyril nucleus is single bond or double bond, or a salt thereof, which is useful as a medicament for promotion of the survival of normal cells, brain cells, heart cells, and skin, and further for inhibiting of Gram negative sepsis and cell migration and cell invasion due to inhibition of PTEN and is further useful as a medicament for the treatment of neuronal disorders, for example, an anticonvulsant, a neuroprotecting agent, a medicament for treatment of regional cerebral edema and neurologic motor impairment, cognitive disorders, traumatic brain injury, Parkinson's disease, epilepsy, migraine, and Alzheimer's disease, etc.

Abstract: A mounting method for a skid steer loader is disclosed including coupling a first end portion of a component directly to a first wall of a skid steer loader frame. The method also includes coupling a second end portion of the component to an opposite wall of the skid steer loader frame by a mounting system that allows for dimensional differences between the component and the skid steer loader frame.

Abstract: A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8?x?1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.