Abstract: An alignment marker on a substrate surface is covered with polycrystalline semiconductor material during the growth of an epitaxial layer on the monocrystalline substrate. This polycrystalline material is then removed with a selective etchant to re-expose the marker for use in defining an area for processing at the epitaxial layer surface. Permits accurate alignment between buried layers and regions formed from the epitaxial layer surface. Permits provision of the marker on the substrate when it is undesirable to provide the marker on the epitaxial layer surface. Particularly advantageous for electron image projection exposure of electron-sensitive resists.

Abstract: A dipole antenna consisting of a number of sub-elements, each sub-element comprising a plurality of thin electric conductors or strips of wires arranged on the surface of an insulating cylinder. The conductors in each sub-element have the same length and are distributed around the circumference of the cylinder, so that each such sub-element forms a so-called "thick" dipole element. The lengths of the conductors in different sub-elements are different, so that the sub-elements together will cover a broad frequency band. At least each conductor in the group having the longest conductors are provided with inductive reactances, to prevent excitation of said longer conductors in higher modes at resonance frequencies of the shorter conductors.

Abstract: A non-recursive discrete filter for simultaneously realizing for example two band-pass filter characteristics starting from a given lowpass transfer characteristic, wherein one bandpass filter has an in-phase transfer characteristic and the other filter the quadrature transfer characteristic of this in-phase filter. The central frequency of these filters is f.sub.o and the output sampling frequency is f.sub.s = 8f.sub.o. This discrete filter comprises multiplying means in which input signal samples x(n) are modified by an associated filter coefficient a(i) for generating modified input signal samples z(n,i) = a(i)x(n-i). The coefficients a(i) are the same for both transfer characteristics and are given by: ##EQU1## WHEREIN H.sub.1 (I) REPRESENTS THE DISCRETE IMPULSE RESPONSE OF THE LOWPASS FILTER.To realize the in-phase transfer characteristic the samples z(n,i) are thereafter multiplied by a factor sgn[cos (.pi.i/4)] and the products thus obtained are accumulated.

Abstract: A method of manufacturing a semiconductor device in which a masking layer is formed on part of the surface of a deposited layer of relatively high resistivity polycrystalline semiconductor material present on an insulating layer provided at a surface of a semiconductor body or body part and a relatively low resistivity conductive region having a substantially uniform narrow line width is defined in the polycrystalline layer by effecting a diffusion process to laterally diffuse a doping element into a portion of the polycrystalline layer underlying an edge portion of the masking layer without diffusing the doping element through the insulating layer into the semiconductor body or body part.

Abstract: A method of providing a layer of solid material, in particular semiconductor material, in which drops of a liquid from which the solid material is deposited, is dropped and spread on a flat surface which is given a rotating movement and also another periodic movement, changing the position of the plane of the substrate surface.

Abstract: A method of diffusing doping impurities in semiconductor bodies by the transfer in the vapor phase from a source in a condensed form.The diffusion space is of the "half-open type" and a cold point is maintained in it at the end opposite to the location of the source which is placed near a restricted passage to the atmosphere surrounding the space.

Abstract: An apparatus is described for reading a record carrier with an optical information structure, in which apparatus errors in the focussing of a read beam on the information plane are detected with an astigmatic focussing-error detection system.By including a beam splitter in the path of a beam which has been reflected by the record carrier and by including an astigmatic focussing-error detection system in each of the paths of the two sub-beams thus obtained, the astigmatism of the one detection system being opposed to that of the other detection system, a focussing-error signal can be derived which is independent of optical faults in the read apparatus.

Abstract: A system for the position control of a write-read head for information carriers with a magnetic storage layer, having optical servo tracks. The servo tracks consist of periodically interrupted lines, whose period length is constant and whose phase relationship differs for adjacent servo tracks. An optical scanner is connected to the magnetic write-read head and is provided with a diaphragm which transmits at the most one line section and at least one overlap between two adjacent line sections to the scanner.

Abstract: An automatic machine including a two-dimensional positioning table, a device for measuring the dispositions attained by the table in each of said dimensions and a tool holder having an operative center in respect to said two dimensions. Furthermore means are provided for imaging a graticule means to an operative plane of the table so that the center of said image is substantially aligned with the operative center of the tool holder. A visual input device is positioned to view a part of said operative plane including said graticule image and comprises pattern recognition apparatus for:(a) identifying a predetermined mark on a flat surface of an object carried by said table, said flat surface lying in said operative plane,(b) identifying said graticule image, and(c) measuring the separation of said mark from said graticule image center.

Abstract: In an X-ray examining device comprising a television chain and an image recording memory, the deflection signals of the television pick-up tube and a drive of the recording memory are synchronized via the power supply mains. When the high voltage generator is switched on, inductive loading of the power supply mains occurs and the resultant phase shifts cause errors in the synchronization. This gives rise to the appearance of artifacts in a monitor image formed from the recording via the memory. Uncoupling of the synchronization from the power supply mains between an instant some time before and an instant some time after switching of the high voltage generator prevents the undesired recording errors.

Abstract: A light deflector used for tracking a spiral information track alternately and periodically interrupted by data blocks and guide segments arranged within sectors of a rotating record carrier. The light deflector is controlled during the first turn of the information track by a slow analog light deflector having a small stroke and is controlled during the remainder of the recording by a digital light deflector control device having a relatively large stroke.

Abstract: A circuit arrangement for the frequency division of high frequency pulses in which a cyclic sequence of transistors are connected together via tapped resistances. In integrated circuit technology the tapped resistances may be the parasitic resistance of a semiconductor layer which serves as a common collector for the transistors.

Abstract: A semiconductor device having a Hall element in which, in order to reduce the offset, the Hall element consists of an even number of sub-Hall elements provided in one semiconductor body and the anode and cathode contacts of which are connected together, which sub-Hall elements each have a Hall contact, and in which one half of the Hall contacts is of one polarity and the other half is of the opposite polarity. The sub-Hall elements are divided into groups of each two sub-Hall elements with mutually parallel main current directions, and Hall contacts of the same polarity are connected together. The sub-Hall elements advantageously have a common Hall body in the form of a square of another regular polygon, in which the contacts are placed along the edge of the Hall body.

Abstract: An electrically controllable pivoting mirror arrangement comprises a pivoting mirror which is mounted on a frame with the aid of a mirror support and which carries permanent magnetic means at its back for producing a permanent magnetic field for electrical control purposes. Between the pivoting mirror and the permanent magnetic means a mounting plate is located which comprises means for positioning the pivoting mirror and the permanent magnetic means. The mounting plate may also serve for clamping a mirror bearing which is made of rubber-like material or for positioning the mirror bearing when this is glued onto the back of the pivoting mirror.

Abstract: A display arrangement including a source of polarized radiation; a magnetic material capable of supporting magnetic bubble domains in the path of the polarized beam, for producing a modulated beam; a device for representing an image encoded signal by means of the magnetic bubble domains; and a display device in the path of the modulated polarized beam for providing a visual display of the encoded image.

Abstract: A solar collector comprising an elongate absorber centrally arranged in an evacuated, transparent, circular-cylindrical tube provided with a reflector in the form of a 1/3-circular cylinder in contact with the absorber.

Abstract: An integrated circuit memory array having a plurality of memory cells including two cross-coupled transistors of one conductivity type, load transistors of the other conductivity type, and a bit line, connected to the base region of one of the cross-coupled transistors through a bit line transistor. The array features a common node, directly interconnecting all of the base regions of the load transistors and the emitter regions of the cross-coupled transistors, for each of the memory cells; and a row selection line connected to the emitter regions of the load transistors in an associated row of memory cells.

Abstract: In an integrated circuit, a semiconductor body having a surface, spaced semiconductor circuits formed in the body, intercoupling means formed in the body adjacent each of said circuits, and connected to said circuits. A plurality of conductive paths are formed between said intercoupling means and carried by the body. Each intercoupling means includes a plurality of semiconductor regions formed in the semiconductor body, said regions in combination capable of assuming a first low impedance condition and a second high impedance condition to thereby selectively couple each of said circuits to selected conductive paths or decouple each of said circuits from said conductive paths. In a specific embodiment of the invention a massive monolithic integrated circuit is configured using intercoupling means in combination with small scale random access memory semiconductor circuits. A static MOS random access memory having a 2,048 word capacity, with 9 bits/word and an 11 bit address is provided.