Abstract: Embodiments herein include a method that begins by receiving a print job for a customer from an intermediary program such as a print driver. The print job comprises instructions to print a document for the customer and includes, for example, data and print characteristics. The method then evaluates the colorspace of each page of the print job to determine whether any multi-color items are included within the print job. The method ignores classifications of the print job as either a multi-color print job (e.g., color print job) or a single color print job (e.g., black and white) from the print driver and, instead, classifies the print job as either a multi-color print job or a single color print job based only on whether the multi-color items are included within the print job. Then, the method provides the billing information for the customer to an appropriate entity that bills the customer.

Abstract: A coated-core cleaner blade has a core comprising a first material and a coating surrounding the core. The coating comprises a second material that is different than the first material. Further, the core (first material) is rigid compared to the coating (second material). Therefore, the first material has a first flexibility that is much less than a second flexibility of the second material.

Abstract: A method of forming a field effect transistor creates shallower and sharper junctions, while maximizing dopant activation in processes that are consistent with current manufacturing techniques. More specifically, the invention increases the oxygen content of the top surface of a silicon substrate. The top surface of the silicon substrate is preferably cleaned before increasing the oxygen content of the top surface of the silicon substrate. The oxygen content of the top surface of the silicon substrate is higher than other portions of the silicon substrate, but below an amount that would prevent epitaxial growth. This allows the invention to epitaxially grow a silicon layer on the top surface of the silicon substrate. Further, the increased oxygen content substantially limits dopants within the epitaxial silicon layer from moving into the silicon substrate.

Abstract: One exemplary method embodiment, pre-processes customer requests that are maintained in a dataset to create a matrix between products and the customer requests. Each of the customer requests comprises at least a customer identification, a textual request, and a product identification related to the textual request. After such pre-processing of the dataset, the method can respond to queries of the dataset using the matrix.

Abstract: Embodiments herein include a method that receives a previously created variable data print file. The method iterates through pages of the variable data print file to identify reused objects and decomposes the variable data print file into a decomposed document template, comprising the reused objects, and into a decomposed (factored) variable data file, comprising objects other than the reused objects. In some embodiments the method can further decompose the reused object into image and graphic objects, and into non-image and non-graphic objects. This allows the image and graphic objects, the non-image and non-graphic objects, and/or the decomposed variable data file to be edited without needing to go back to the application that-originally generated the variable print data file.

Abstract: Disclosed are embodiments of an asymmetric field effect transistor structure and a method of forming the structure in which both series resistance in the source region (Rs) and gate to drain capacitance (Cgd) are reduced in order to provide optimal performance (i.e., to provide improved drive current with minimal circuit delay). Specifically, different heights of the source and drain regions and/or different distances between the source and drain regions and the gate are tailored to minimize series resistance in the source region (i.e., in order to ensure that series resistance is less than a predetermined resistance value) and in order to simultaneously to minimize gate to drain capacitance (i.e., in order to simultaneously ensure that gate to drain capacitance is less than a predetermined capacitance value).

Abstract: A method, apparatus, architecture and computer program product for populating a service request is disclosed. A service request is modeled to determine the steps involved. The data is missing from a service request for each step of the request is assessed. The data sources for the modeled request are identified. The relevant data is extracted from the identified data sources. The service request is populated with the extracted data. A service request is executed by executing at least one process step acting on the populated service request.

Abstract: Embodiments herein present device, method, etc. for a hybrid orientation scheme for standard orthogonal circuits. An integrated circuit of embodiments of the invention comprises a hybrid orientation substrate, comprising first areas having a first crystalline orientation and second areas having a second crystalline orientation. The first crystalline orientation of the first areas is not parallel or perpendicular to the second crystalline orientation of the second areas. The integrated circuit further comprises first type devices on the first areas and second type devices on the second areas, wherein the first type devices are parallel or perpendicular to the second type devices. Specifically, the first type devices comprise p-type field effect transistors (PFETs) and the second type devices comprise n-type field effect transistors (NFETs).

Abstract: Disclosed is a method of forming planar and non-planar semiconductor devices using a sacrificial gate sidewall spacer with a uniform vertical thickness. The method forms such spacers by selectively growing an epitaxial film on the vertical sidewalls of a gate structure. The use of an epitaxial growth process, as opposed to a deposition and etch process, ensures that the resulting spacers will have a uniform vertical thickness. Then, any process steps (e.g., implant and/or etch process steps) requiring the use of the gate sidewall spacers (e.g., as a mask or shield) are performed. Precise implant and/or etch profiles can be achieved, during these process steps, as a function of the uniformity of the gate sidewall spacers. Once such process steps are completed, the sidewall spacers are selectively removed. Optionally, before removing the sidewall spacers, they can be oxidized in order to enhance the selective removal process.

Abstract: Dynamic adaptation is provided within web service composition and execution. Within a logical composition stage, a set of abstract workflows for a web service is selected from a number of generated abstract workflows. Within a physical composition stage, a set of executable workflows is selected from a number of executable workflows that are generated at least based on the set of abstract workflows selected. Within a runtime stage, an executable workflow to be executed is selected from the set of executable workflows and that particularly satisfies specified requirements. The executable workflow selected is executed within an execution environment. The executable workflow within the runtime stage, the set of executable workflows within the physical composition stage, and the set of abstract workflows within the logical composition stage are periodically dynamically assessed and reselected.

Abstract: One method embodiment executes a director. The director invokes at least one “active stamp” when processing data, where each of the active stamps relates to a different data manipulation method. The active stamps comprise specialized, portable and dynamic logic processes generically applicable to a plurality of different directors such that each of the active stamps can be individually invoked by each of the different directors to perform the same operation for each of the different directors. The invoking of the active stamps by the director calls the active stamps from a resource in a structure that allows each of the different directors to individually access each of the active stamps that correspond to a current data manipulation process being invoked by each of the different directors. Because the director calls the active stamps at run time of the processing of the data, the active stamps avoid having to be compiled with the director.

Abstract: Disclosed are embodiments of a semiconductor structure that incorporates multiple nitride layers stacked between the center region of a device and a blanket oxide layer. These nitride layers are more thermally conductive than the blanket oxide layer and, thus provide improved heat dissipation away from the device. Also disclosed are embodiments of a method of forming such a semiconductor structure in conjunction with the formation of any of the following nitride layers during standard processing of other devices: a nitride hardmask layer (OP layer), a “sacrificial” nitride layer (SMT layer), a tensile nitride layer (WN layer) and/or a compressive nitride layer (WP layer). Optionally, the embodiments also incorporate incomplete contacts that extend through the blanket oxide layer into one or more of the nitride layers without contacting the device in order to further improve heat dissipation.

Abstract: An apparatus comprises a first layer within a semiconductor chip having active structures electrically connected to other active structures and having electrically isolated first inactive structures. A second layer within the semiconductor chip is physically connected to the first layer. The second layer comprises an insulator and has second inactive structures. The first inactive structures are physically aligned with the second inactive structures.

Abstract: A method provides a knowledgebase having a set of existing print product classes into which print product descriptions are classified. The method receives the new print product class from a user and maps the representation of new print product class conditions to be semantically consistent with the representation of existing class conditions. The method evaluates the new print product class to produce user feedback. The user feedback is output to the user. The new print product class is added to the knowledgebase only if the new print product class is valid and free of errors and semantically consistent with the definitions of already existing print product classes.

Abstract: Disclosed are embodiments of a method that both monitors patterning integrity of etched openings (i.e., ensures that lithographically patterned and etched openings are complete) and forms on-chip conductive structures (e.g., contacts, interconnects, fuses, anti-fuses, capacitors, etc.) within such openings. The method embodiments incorporate an electro-deposition process to provide both the means by which pattern integrity of etched openings can be monitored and also the metallization required for the formation of conductive structures within the openings. Specifically, during the electro-deposition process, electron flow is established by applying a current to the back side of the semiconductor wafer, thus, eliminating the need for a seed layer. Electron flow through the wafer and into the electroplating solution is then monitored and used as an indicator of electroplating in the etched openings and, thereby, as an indicator that the openings are completely etched.

Abstract: If the device-specific maintenance rate statistics is higher than the average maintenance rate statistics, method embodiments herein alter replacement warning thresholds for components of the device by extending the replacement warning thresholds to produce modified replacement warning thresholds. If the specific device incurs unscheduled maintenance visits more often than average, the embodiments herein extend the replacement warning thresholds for components of the device. The amount that the replacement warning thresholds are extended is different for different parts, and is based on part life, part cost, and part service cost. If the device-specific maintenance rate statistics is lower than the average maintenance rate statistics, method embodiments herein alter replacement warning thresholds for components of the device by shortening the replacement warning thresholds to produce modified replacement warning thresholds.

Abstract: A method of manufacturing an integrated circuit structure forms a first opening in a substrate and lines the first opening with a protective liner. The method deposits a material into the first opening and forms a protective material over the substrate. The protective material includes a process control mark and includes a second opening above, and aligned with, the first opening. The method removes the material from the first opening through the second opening in the protective material. The process control mark comprises a recess within the protective material that extends only partially through the protective material, such that portions of the substrate below the process control mark are not affected by the process of removing the material.

Abstract: A method and apparatus includes an integrated circuit device, and at least one alignment mark on the integrated circuit device, the alignment mark comprises a first coded region, a second coded region adjacent the first coded region, and a third coded region adjacent the second coded region, the second coded region located between the first coded region and the third coded region, and markings on the first coded region and the third coded region being identical.

Abstract: A system and method of crawling at least one website comprising at least one URL includes maintaining a lookup structure comprising all of the URLs known to be on a website; calculating a hub score for each webpage of the website to be recrawled, wherein the hub score measures how likely the to be recrawled webpage includes links to fresh content published on the website; sorting all the to be recrawled pages by their hub scores; and crawling the to be recrawled pages in order from highest hub scores to lowest hub scores. The calculating comprises computing a first value equaling a percentage of a number of new relative URLs on the to be recrawled page; computing a second value equaling a percentage of a previous hub score of the to be recrawled page; and computing the hub score as a sum of the first and the second values.

Abstract: A CMOS device comprising a FinFET comprises at least one fin structure comprising a source region; a drain region; and a channel region comprising silicon separating the source region from the drain region. The FinFET further comprises a gate region comprising a N+ polysilicon layer on one side of the channel region and a P+ polysilicon layer on an opposite side of the channel region, thereby, partitioning the fin structure into a first side and a second side, respectively. The channel region is in mechanical tension on the first side and in mechanical compression on the second side. The FinFET may comprise any of a nFET and a pFET, wherein the nFET comprises a N-channel inversion region in the first side, and wherein the pFET comprises a P-channel inversion region in the second side. The CMOS device may further comprise a tensile film and a relaxed film on opposite sides of the fin structure adjacent to the source and drain regions, and an oxide cap layer over the fin structure.