Abstract: A method for generating a photoresist structure is disclosed in which a layer of photoresist is deposited over a semiconductor substrate. In a first exposure, the layer of photoresist is exposed to deep ultraviolet light. A second exposure is then performed using a different wavelength of light to pattern the layer of photoresist. The photoresist is then developed so as to form a photoresist structure having reduced thickness and rounded corners. This gives a photoresist structure having a reduced shadow area. An angled ion implant can then be performed using the photoresist structure as a mask.

Abstract: The present invention provides a packaged semiconductor device that includes two semiconductor die. The first semiconductor die is attached to a package substrate using adhesive. A first set of wire bonds electrically connect the first semiconductor die to the package substrate. A first layer of encapsulant extends over the first semiconductor die and over the first set of wire bonds. A second semiconductor die is attached to the first layer of encapsulant using adhesive. A second set of wire bonds electrically connect the second semiconductor die to the package substrate. A second layer of encapsulant extends over the second semiconductor die and over the second set of wire bonds.

Abstract: A method for forming a photoresist structure that does not have swelling defects. A layer of low activation energy deep ultraviolet photoresist is disposed over a layer that is to be patterned. A layer of high activation energy deep ultraviolet photoresist is then deposited such that the layer of high activation energy photoresist directly overlies the layer of low activation energy photoresist. The two photoresist layers are then processed by performing exposure, post-exposure bake, and development steps to form a photoresist structure. An etch step is then performed so as to form a patterned layer that does not have swelling defects.

Abstract: An apparatus and a method for reducing layer separation and cracking in semiconductor devices. A structure is formed over a semiconductor wafer that includes die separated by scribe streets and that includes probe pads for testing die. A notch is cut within a scribe street so as to expose an open area that does not contain any probe pad and that does not contain any metal layers. The wafer is then severed into semiconductor devices by extending a cutting blade through the open area. A semiconductor device is then electrically and physically coupled to a ball grid array substrate to form a ball grid array device having reduced layer separation and cracking.

Abstract: A method for generating a swing curve and a photoresist feature formed using the swing curve. A layer of photoresist is formed that has varying thickness. The thickness of the layer of photoresist is determined at a plurality of points. The semiconductor wafer is then exposed and developed to form a photoresist structure that includes features. For each of the points at which thickness was determined, the size of a corresponding feature is determined. A curve is then determined that correlates the thickness measurements and the size measurements. The resulting swing curve is then used to determine a thickness for photoresist deposition and a photoresist layer is deposited, exposed, and developed to obtain a photoresist feature having the desired size.

Abstract: A method for forming a packaged semiconductor device and a packaged semiconductor device. A first semiconductor die is coupled to a package substrate. Wire bonds are then coupled to the first semiconductor die and to the package substrate. Encapsulant is applied such that the encapsulant extends over the first semiconductor die and over the wire bonds. The encapsulant is then at least partially cured. A second semiconductor die is coupled to the encapsulant. The second semiconductor die is electrically coupled to the ball grid array substrate. Encapsulant is then applied and cured to form a second layer of encapsulant that covers the second semiconductor die.