Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a first surface and a second surface, a source region disposed on the first surface, a gate region disposed on the first surface adjacent the source region, and a drain region disposed on the first surface. The semiconductor device also includes a pair of charge control trenches disposed between the gate region and the drain region. Each of the pair of charge control trenches is characterized by a width and includes a first dielectric material disposed therein and a second material disposed internal to the first dielectric material. Additionally, a concentration of doping impurities present in the semiconductor layer of the first conductivity type and a distance between the pair of charge control trenches define an electrical characteristic of the semiconductor device that is independent of the width of each of the pair of charge control trenches.

Abstract: A lateral device includes a gate region connected to a drain region by a drift layer. An insulation region adjoins the drift layer between the gate region and the drain region. Permanent charges are embedded in the insulation region, sufficient to cause inversion in the insulation region.

Abstract: Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.

Abstract: The present inventors have realized that manufacturability plays into optimization of power semiconductor devices in some surprising new ways. If the process window is too narrow, the maximum breakdown voltage will not be achieved due to doping variations and the like normally seen in device fabrication. Thus, among other teachings, the present application describes some ways to improve the process margin, for a given breakdown voltage specification, by actually reducing the maximum breakdown voltage. In one class of embodiments, this is done by introducing a vertical gradation in the density of fixed electrostatic charge, or in the background doping of the drift region, or both. Several techniques are disclosed for achieving this.

Abstract: Power semiconductor devices in which insulated empty space zones are used for field-shaping regions, in place of dielectric bodies previously used. Optionally permanent charge is added at the interface between the insulated empty space zone and an adjacent semiconductor drift region.

Abstract: A vertical device structure includes a volume of semiconductor material, laterally adjoining a trench having insulating material on sidewalls thereof. A gate electrode within the trench is capacitively coupled through the insulating material to a first portion of the semiconducting material. Some portions of the insulating material contain fixed electrostatic charge in a density high enough to invert a second portion of the semiconductor material when no voltage is applied. The inverted portions can be used as induced source or drain extensions, to assure that parasitic are reduced without increasing on-resistance.

Abstract: A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.

Abstract: A high-voltage termination structure includes a peripheral voltage-spreading network. One or more trench structures are connected at least partly in series between first and second power supply voltages. The trench structures include first and second current-limiting structures connected in series with a semiconductor material, and also includes permanent charge in a trench-wall dielectric. The current-limiting structures in the trench structures are jointly connected in a series-parallel ladder configuration. The current-limiting structures, in combination with the semiconductor material, provide a voltage distribution between the core portion and the edge portion.

Abstract: A manufacturing process and design structure for a super self-aligned trench power MOSFET. A plurality of super self-aligned trenches of different depths are formed into the body layer and epitaxial layers, preferably by using a multilayer stack of dielectric material etched to form spacers. Respective trenches contain gate conductors, body-contact conductors, and preferably a third trench containing a recessed field plate. This results in a MOSFET structure having high cell density and low gate charges and gate-drain charges.

Abstract: A system and method for varying the level of detail encoded in a video. In a preferred embodiment, some regions of a wide-angle video scene are encoded in an almost lossless manner, while other regions are encoded with less detail. Regions of interest can be determined in many ways, including a priori, automatically in real time, or by the selection of human operators.

Abstract: The present inventions provide a system and method for a wide angle camera capable of high resolution peripheral vision. A wide angle lens system distorts the image and conveys it to an image sensor, which converts the image to an electronic signal and conveys it to image processing circuitry. The image processing circuitry corrects the distortion or transforms it to human recognizable image forms. In preferred embodiments, the distortion provides greater resolution of regions of interest and more efficient use of the area of the image sensor.

Abstract: A trench MOSFET contains a recessed field plate (RFP) trench adjacent the gate trench. The RFP trench contains an RFP electrode insulated from the die by a dielectric layer along the walls of the RFP trench. The gate trench has a thick bottom oxide layer, and the gate and RFP trenches are preferably formed in the same processing step and are of substantially the same depth. When the MOSFET operates in the third quadrant (with the source/body-to-drain junction forward-biased), the combined effect of the RFP and gate electrodes significantly reduces in the minority carrier diffusion current and reverse-recovery charge. The RFP electrode also functions as a recessed field plates to reduce the electric field in the channel regions when the MOSFET source/body to-drain junction reverse-biased.

Abstract: The present invention provides a system for providing administrative support for a military unit. The invention includes a server-side database containing information about the military unit and a client-side browser application that provides a secure network connection to the database. Unit members can access the application to retrieve and edit the administrative information, wherein unit members can access administrative information specific to their respective responsibilities. These areas may include personnel, security, training and operations, logistics, communications and Information Systems, and chaplain services. Unit administrative information also includes information for a family support group for family members of personnel assigned to the military unit.

Abstract: A scanner capable of scanning a curved surface such as a bottle or other cylindrical, or curved surfaced object. In one class of embodiments, the present innovations include a scan head and one or more rollers (preferably two rollers, one active, the other passive) on which a cylindrical object turns in proximity to the head. As the object turns, the head records the image on the surface of the object.

Abstract: Methods and systems for transforming electric power between two or more portals. Any or all portals can be DC, single phase AC, or multi-phase AC. Conversion is accomplished by a plurality of bi-directional conducting and blocking semiconductor switches which alternately connect an inductor and parallel capacitor between said portals, such that energy is transferred into the inductor from one or more input portals and/or phases, then the energy is transferred out of the inductor to one or more output portals and/or phases, with said parallel capacitor facilitating “soft” turn-off, and with any excess inductor energy being returned back to the input. Soft turn-on and reverse recovery is also facilitated. Said bi-directional switches allow for two power transfers per inductor/capacitor cycle, thereby maximizing inductor/capacitor utilization as well as providing for optimum converter operation with high input/output voltage ratios. Control means coordinate the switches to accomplish the desired power transfers.

Abstract: A computer system in which a graphics accelerator unit manages page faulting of texture data invisibly to the host processor.

Abstract: Methods and systems for controlling processes related to the amount of fluid in a container subjected to externally-excited motions. Fluid level sensor measurements in processing tanks on-board boats are confused by ocean waves and swells. A hydrodynamic model of a fluid in a tank can be constructed using non-linear dynamic model algorithms with inputs such as multi-axis accelerations, fluid viscosity, and apparent level measurements. The model can be used to filter-out boat motion disturbances to obtain a corrected level of the fluid in the tank. The corrected fluid level signal can be further processed using a dynamic model of the tank and associated input and output flow rates in a closed loop observer. The methods and systems are especially advantageous for offshore equipment such as cementing and fracturing ships.

Abstract: Methods for controlling the in-feed and discharge rates of materials flowing into and out of a mixing process where one priority is to achieve a target mixture flow rate from the mixing process and another priority can be to achieve a target value for a mixture property. Actuators can be operated to control material in-feed rates, the mixture composition, and discharge rate, and can maintain a hold-up of the mixture in the mixing process. A total flow rate controller provides a control signal to a controller acting on the discharge rate and a controller acting on the in-feed rates. The mixture discharge flow rate can be automatically reduced from its desired target when the commanded rate of at least one of the materials exceeds its available supply rate as inferred from an inability to maintain the targeted value for the mixture property.

Abstract: Systems for managing the operational condition of flow control valves in process systems. As a control valve experiences mechanical wear during operation, the physical changes to the valve can alter its dead band and flow coefficient. A non-linear dynamic model determines the present dead band by modeling the relationship between the actual flow through the valve and the commanded drive signal to the valve. The present valve flow coefficient can be determined by removing the dead band from the drive signal and using that modified signal in a flow rate model for the valve to adaptively find the flow coefficient value which matches the predicted flow from the flow rate model to the present measured flow from a flow rate sensor. The present dead band and flow coefficient can be used to update valve control algorithms and to make valve maintenance decisions.

Abstract: Systems for controlling the in-feed and discharge rates of materials flowing into and out of a mixing process where one priority is to achieve a target mixture flow rate from the mixing process and another priority can be to achieve a target value for a mixture property. Actuators can be operated to control material in-feed rates, the mixture composition, and discharge rate, and can maintain a hold-up of the mixture in the mixing process. A total flow rate controller provides a control signal to a controller acting on the discharge rate and a controller acting on the in-feed rates. The mixture discharge flow rate can be automatically reduced from its desired target when the commanded rate of at least one of the materials exceeds its available supply rate as inferred from an inability to maintain the targeted value for the mixture property.