Abstract: An aluminum lateral interconnect of a Back End of the Line (BEOL) is used to define the x and y dimensions of a through-silicon via in a semiconductor chip formed in a silicon substrate. The TSV includes one or more aluminum annulus formed on a surface of the substrate, and a deep trench in the substrate having a diameter that is determined by the diameter of the aluminum annulus. The annulus can also be provided with a conductive strap upon which a capacitor can be formed. The strap can also be used to provide a connection of the TSV to other BEOL interconnects.

Abstract: A method for modeling bond wires in an IC package for predicting noise effects generated by electromagnetic coupling in complex bond wire configurations. A look-up table of equivalent LC circuit models for the bond wires is generated that accurately predicts the effects of the bond wire circuitry of a signal transmission system. Switch and mirror techniques are applied to reduce the bond wire configurations necessary to simulate.

Abstract: A method of performing a static timing analysis based on slack values to verify and optimize a logic design includes: selecting one or more circuits within the logic design having at least two inputs taking on a known value; identifying a critical input that controls an output arrival time of the selected circuit from among the inputs that take on the known value; determining one or more non-critical input of the circuit a required arrival time based on the difference between the arrival times of the critical and non-critical inputs; and computing the slack at a critical input based on the difference between the AT of the critical and non-critical inputs. The design optimization based on the slack defined by arrival time differences preferably uses a reverse merge margin design metric. The metric determines the exact required amount of improvement in the input arrival time of non-critical signals of a clock shaping circuit.

Abstract: A method for creating a rectilinear non-convex polygonal output representative of a component used to build a VLSI circuit chip from a plurality of points corresponding to a plurality of components of the chip includes: covering the plurality of points with a set of rectangles; creating a Voronoi diagram for the set of rectangles; forming a nearest neighbor tree for the Voronoi diagram; connecting a selected set of the rectangles corresponding to the nearest neighbor tree into a non-convex rectilinear polygon; and applying the non-convex rectilinear polygon to build the VLSI chip.

Abstract: A through-silicon via (TSV) structure forming a unique coaxial or triaxial interconnect within the silicon substrate. The TSV structure is provided with two or more independent electrical conductors insulated from another and from the substrate. The electrical conductors can be connected to different voltages or ground, making it possible to operate the TSV structure as a coaxial or triaxial device. Multiple layers using various insulator materials can be used as insulator, wherein the layers are selected based on dielectric properties, fill properties, interfacial adhesion, CTE match, and the like. The TSV structure overcomes defects in the outer insulation layer that may lead to leakage. A method of fabricating such a TSV structure is also described.

Abstract: Computing the gradients of capacitances in an integrated circuit chip layout with respect to design and process parameters is described. Included is a shape processing engine in the form of a variational mapping engine and a capacitance calculation engine that includes a gradient calculation engine. The variational mapping engine translates physical parameter variations into variations on the edges of the elementary patterns to which the layout of the integrated circuit is decomposed. The gradient calculation engine computes capacitance gradients by combining information from two sources. The first source consists of pre-existing gradients in a capacitance lookup table. The second source consists of analytical expressions of capacitance correction factors.

Abstract: Assigning pins to macro-blocks of an Integrated Circuit (IC) chip is described. The macro-block pin assignments are automatically placed using Constraint Programming (CP) techniques to position the pins on the periphery of a macro-block. Bus-ordering and pin-spacing constraints are performed considering all the nets forming the IC design simultaneously. The CP formulation includes modeling detailed and discrete constraints required to achieve an optimal pin-assignment. A stochastic CSP solver is used to define the cost function on search points giving full assignments to all the variables. The macro-block pins are ultimately moved to computed locations.

Abstract: A method and a system for selecting timing points in an electrical interconnect network to be used in electrical simulations for a static timing analysis for improved accuracy. The present method includes discovering choke points in an electrical model of the interconnect for which all the paths from drivers to receivers must pass through on certain types of nets. The method then uses the choke point electrical nodes, where they exist, as an output timing point of the logic gate driving the net. The method solves the problem of inaccuracies due to resistances between different driver pins on the same interconnect net, though it can also be applied to solving analogous inaccuracies due to resistances between different receiver pins associated with the same receiver timing point.

Abstract: A method for verifying whether a circuit meets timing constraints by performing an incremental static timing analysis in which slack is represented by a distribution that includes sensitivities to various process variables. The slack at an endpoint is computed by propagating the arrival times and required arrival times of paths leading up to the endpoint. The computation of arrival and required arrival times needs the computation of delays of individual gate and wire segments in each path that leads to the endpoint. The mixed mode adds a deterministic timing to the statistical timing (DSTA+SSTA).

Abstract: In a BEOL process, UV radiation is used in a curing process of ultra low-k (ULK) dielectrics. This radiation penetrates through the ULK material and reaches the cap film underneath it. The interaction between the UV light and the film leads to a change the properties of the cap film. Of particular concern is the change in the stress state of the cap from compressive to tensile stress. This leads to a weaker dielectric-cap interface and mechanical failure of the ULK film. A layer of nanoparticles is inserted between the cap and the ULK film. The nanoparticles absorb the UV light before it can damage the cap film, thus maintaining the mechanical integrity of the ULK dielectric.

Abstract: A method for performing a hierarchical statistical timing analysis of an integrated circuit (IC) chip design by abstracting one or more macros of the design. The method includes performing a statistical static timing analysis of at least one macro; performing a statistical abstraction of the macro to obtain a statistical abstract model of the macro timing characteristics; applying the statistical abstract model as the timing model for each occurrence of the macro leading to a simplified IC chip design; and performing a hierarchical statistical timing analysis of the simplified chip design. The method achieves a context aware statistical abstraction, where a generated statistical abstract model is instantiated for each macro of the chip during statistical static timing analysis at the chip level, providing a compressed and pruned statistical timing abstraction and reducing the model-size during the statistical abstraction.

Abstract: An abstraction model supporting multiple hierarchical levels is inputted into a generalized static timing analysis of a hierarchical IC chip design to analyze and optimize the design of circuits integral to the chip containing a plurality of macro abstracts. An electrical network, synthesized for an internal abstract interconnect segment, is performed only once per macro and is applied to multiple instances of the macro abstract model in the IC chip design. The synthesized electrical network is a resistive capacitive or a resistive inductive capacitive network or a combination thereof. The synthesized electrical network is then used to match impulse response transfer functions of the network and the abstract interconnect segment's timing model. This network is stitched with the electrical parasitics of external interconnect segments connected to macro primary outputs. Various model order reductions are then performed on the electrical parasitics of external interconnects prior to network stitching.

Abstract: An apparatus and method for manufacturing low-cost high-density compact active inductor module using existing DRAM, SRAM and logic process integration. The elements of the active inductor modules are formed by three semiconductor devices including nMOS devices, deep-trench capacitors and a polysilicon or TaN resistor. The active inductor modules can be connected in a parallel and/or serial configuration to obtain a wide range of inductance values. The modular active inductors can be advantageously stored in an ASIC library to facilitate a flexible and convenient circuit design.

Abstract: A method and system to improve the performance of an integrated circuit (IC) chip by removing timing violations detected by performing a statistical timing analysis, given distributions of process and environmental sources of variation. The distributions are quantized using a minimum distortion criterion into discrete values. For each timing node of the IC circuit, a discrete minimum and maximum operation is performed on the timing parameters using a subset of combinations of the discrete values. The results of the discrete minimum and maximum operation are then de-quantized and propagated to a subsequent timing node and edge thereof. The process continues until one or more primary inputs and outputs of the IC chip are reached. The design of the IC chip is modified by removing all the timing violations identified.

Abstract: A method for converting interconnect parasitics of an interconnect network into slew dependent pin capacitances utilizes charge matching between predetermined voltage thresholds. During timing abstraction of a macro, parasitics of interconnects connected to the primary inputs are represented as slew dependent pin capacitances in an abstract model being created. Interconnect model order reduction is employed to speed the process. The generated abstract is subsequently used in place of each occurrence of the macro during chip level hierarchical static timing analysis, leading to an enhanced accuracy of the timing analysis of the logic components driving the abstracts.

Abstract: An epitaxial layer of silicon (Si) or silicon-germanium (SiGe) extends over the edge of silicon trench isolation (STI), thereby increasing the effective width of an active silicon region (RX) bordered by the STI. The RX region may have a <100> crystal orientation. An effective width of an FET device formed in the RX region may be increased, therefore performance may be improved with same density. Isolation may not be degraded since RX-to-RX distance is same at bottom. Junction capacitance may be reduced since part of the RX is on STI.

Abstract: A method for loading checkpoint timing in an environment where the boundary arrival times, slews, required arrival times, or loads differ from the checkpoint run. A timing checkpoint file generated for one or more hierarchical modules, during which each input is assigned a unique phase tag. The association of unique phase tags allows subsequent restart analyses to efficiently adjust the checkpoint timing in relation to the restart timing environment. In the restart run, one or more such checkpoint files is read, during which an initial propagation of arrival, required arrivals and slew times are performed, followed by a local re-update based on adjusted arrival times and the required arrival times. Finally, if multiple hierarchical modules are updated, a global recalculation of timing values is performed based on a slack change threshold in order to determine whether any new timing failures have been introduced.

Abstract: A structure is provided herein which includes an array of trench capacitors having at least portions disposed below a buried oxide layer of an SOI substrate. Each trench capacitor shares a common unitary buried capacitor plate which includes at least a portion of a first unitary semiconductor region disposed below the buried oxide layer. An upper boundary of the buried capacitor plate defines a plane parallel to a major surface of the substrate which extends laterally throughout the array of trench capacitors. In a particular embodiment, which starts from either an SOI or a bulk substrate, trenches of the array and a contact hole are formed simultaneously, such that the contact hole extends to substantially the same depth as the trenches. The contact hole preferably has substantially greater width than the trenches such that the conductive contact via can be formed simultaneously by processing used to form trench capacitors extending along walls of the trenches.

Abstract: A computerized method for automatically generating a grid-based derivative of a non-gridded cell library of an integrated circuit design comprises the step of determining at least one valid position of at least one wiring element of a circuit of the first cell library, wherein the at least one valid position fulfills all technological design rules and wherein the at least one valid position fits into the second grid format. The method can also be used for automatically transforming a first cell library of an integrated circuit design having a first grid format into a second cell library having a second grid format or for automatically analyzing a grid-based cell library of an integrated circuit design in view of the circuit quality regarding technical design rules.

Abstract: A system and a method for correcting early-mode timing violations that operate across the process space of a circuit design. Optimizations are performed to replace padding that increase path delays on fast paths. At the stage in the design process where early-mode violations are addressed, placement, late-mode timing closure, routing, and detailed electrical and timing analysis are assumed to have been completed. The optimizations are designed to be effective in delaying fast paths while minimizing the impact on already-completed work on the chip, in contrast to relying only on adding pads that can have a negative impact on all of these quantities. The optimizations are classified according to their invasiveness and are followed by their deployment. The deployment is designed to minimize using delay pads, reduce design disruptions, and minimize effects on other aspects of the design.