Abstract: A ferroelectric layer within an array of ferroelectric FETs is encapsulated between a bottom barrier dielectric layer and a top barrier dielectric layer extending beyond the ferroelectric layer. The ferroelectric FETs are formed on first conductivity type silicon, each having two second conductivity type silicon regions within the first conductivity type silicon separated by some distance. The two second conductivity type silicon regions forming a source and a drain with a channel region therebetween. A silicon dioxide layer is formed on the channel region, a bottom barrier dielectric layer is formed on the silicon dioxide layer, a ferroelectric layer is formed on the bottom barrier dielectric layer, a top barrier dielectric layer is formed on the ferroelectric layer, and an electrode layer is formed on the ferroelectric layer.

Abstract: A split-end hair remover comprising an enclosure having top, bottom and sides, where the top includes a substantially planar screen having upper and lower surfaces that include a plurality of apertures through which one or more split hair ends may project, a motor carried within the enclosure that drives several sets of blades, each set of which is disposed around a center of rotation and where each of the blades of a set has a cutting edge disposed parallel to and proximate the lower surface of the planar screen.