Abstract: An output buffer includes an output stage formed by a pull-up transistor and a pull-down transistor connected in series between a supply line set at a supply potential and a ground line set at a ground potential. The output buffer further includes a pre-biasing stage for pre-biasing the control terminal of the pull-up transistor and a pre-biasing stage for pre-biasing the control terminal of the pull-down transistor in order to bring these transistors to the turning-on threshold.

Abstract: An NROM memory device, wherein the memory cells are provided with charge storage regions of insulating material, such as silicon nitride. The memory device includes a row decoder comprising a plurality of drivers; during programming, a first driver supplies a first voltage having a first value to a selected wordline, while the other drivers are configured so as to supply a second voltage having a second non-zero value, lower than the first value, to the other wordlines. Thereby, the gate-drain voltage drop of the deselected cells is reduced, and thus spurious erasing of the deselected cells connected to the selected bitline is reduced. Consequently, the reliability of the memory device is improved considerably and the life thereof is lengthened, thanks to the reduction in the charge injected into the charge storage region.

Abstract: A method for calibrating a frequency of a sigma—delta modulator having a go path that includes, in series, a resonator circuit and of an analog to digital conversion block, and a feedback path including a digital to analog conversion block, including the steps: a) applying an input pulse to the resonator circuit; b) measuring the oscillating frequency of the output signal from the resonator circuit in response to the pulse, while the feedback path of the sigma—delta modulator is opened; c) comparing the oscillating frequency of the resonator circuit with a selected frequency; d) modifying the oscillating frequency proportionately as a function of the comparison step. The resonator circuit includes an integrator filter with a variable gain amplifier in its feedback path, the variable gain configured to be modified as a function of the comparison, performed while the modulator feedback path is opened.

Abstract: A method manages lamp fault conditions in electronic ballasts for one or more gas discharge lamps. The method for fault management of electronic ballast for at least one gas discharge lamp includes the steps of: preheating the lamp filaments applying a low current for a predetermined time; igniting the lamp by increasing at a predetermined rate the voltage applied up to a predetermined strike value; monitoring the lamp current; repeating the steps of igniting the lamp and monitoring the lamp current for a predetermined numbers of times if the lamp current is over a predetermined threshold; and powering the lamp at normal operating conditions.

Abstract: A method for programming a nonvolatile memory cell envisages applying in succession, to the gate terminal of the memory cell, a first and a second programming pulse trains with pulse amplitude increasing in staircase fashion, in which the amplitude increment between one pulse and the next in the first programming pulse train is greater than the amplitude increment between one pulse and the next in the second programming pulse train. The programming method envisages applying, to the gate terminal of the memory cell and before the first programming pulse train, a third programming pulse train with pulse amplitude increasing in staircase fashion, in which the amplitude increment between one pulse and the next may be less than the amplitude increment in the first programming pulse train and substantially equal to the amplitude increment in the second programming pulse train, or else may be greater than the amplitude increment in the first programming pulse train.

Abstract: Described herein is an output buffer including an output stage formed by a pull-up transistor and a pull-down transistor, which are connected in series between a supply line set at a supply potential and a ground line set at a ground potential, with an intermediate node connected to the output of the output buffer. The output buffer further includes a unidirectional decoupling stage arranged between the output of the output buffer and the pull-up transistor for decoupling the output from the supply line during the switching transients of the output buffer in such a way as to prevent the switching noise present on the latter from being transferred onto the output of the output buffer.

Abstract: A controllable assembly of current sources includes several first output terminals, with a first transistor associated with each first output terminal, the current on each first output terminal depending on the current flowing through the first transistor, and a circuit configured, in response to a predetermined variation of a control voltage, to successively progressively turn on, then progressively turn off, each first transistor. The first transistors are MOS transistors, and each first output terminal is associated with a current mirror formed of MOS transistors, the current mirror providing to the first output terminal a current depending on the current flowing through the first transistor.

Abstract: The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.

Abstract: The gyroscope is formed by a driving system including a driving mass having an open concave shape; an accelerometer including a sensing mass and comprising mobile sensing electrodes; a linkage connecting the driving mass to the sensing mass. The sensing mass is surrounded on three sides by the driving mass and has a peripheral portion not facing the sensing mass. The mobile sensing electrodes extend integral with the sensing mass from the peripheral portion not facing the driving mass and are interleaved with fixed sensing electrodes. Thereby, there are no passing electrical connections extending below the sensing mass. Moreover the linkage includes springs placed equidistant from the center of gravity of the accelerometer, and the gyroscope is anchored to the substrate with anchoring springs placed equidistant from the center of gravity of the assembly formed by the driving system and by the accelerometer.

Abstract: The circuit system includes an integrated circuit which is one of a family of equivalent integrated circuits that comprises a first-generation integrated circuit operating at the supply voltage of the circuit system and at least one subsequent-generation integrated circuit having a portion operating at a lower voltage. The first-generation integrated circuit has a direct electrical connection between one of the supply terminals and another terminal. The subsequent-generation integrated circuit has a voltage reducer with regulator the output of which is connected to the other terminal. A filter capacitor is connected between the other terminal and one of the supply terminals.

Abstract: A structure of protection of an area of a semiconductor wafer including a lightly-doped substrate of a first conductivity type against high-frequency noise likely to be injected from components formed in the upper portion of a second area of the wafer. The structure includes a very heavily-doped wall of the first conductivity type having substantially the depth of the upper portion. The wall is divided into segments, each of which is connected to a ground plane.

Abstract: A method for detecting displacements of a micro-electromechanical sensor including a fixed body and a mobile mass, and forming a first sensing capacitor and a second sensing capacitor having a common capacitance at rest. The first and second sensing capacitors being connected to a first input terminal and, respectively, to a first output terminal and to a second output terminal of the sensing circuit. The method includes the steps of closing a first negative-feedback loop, which is formed by the first and second sensing capacitors and by a differential amplifier, feeding an input of the differential amplifier with a staircase sensing voltage through driving capacitors so as to produce variations of an electrical driving quantity which are inversely proportional to the common sensing capacitance, and driving the sensor with the electrical driving quantity.

Abstract: A method for manufacturing a DRAM cell including two active word lines having a drain region and distinct source regions, including, after the forming of insulated conductive lines, the steps of: depositing a first, then a second selectively etchable insulating layers; etching the second insulating layer to only maintain it above conductive lines; depositing and leveling a third insulating layer selectively etchable with respect to at least the second insulating layer; opening the first and third insulating layers to expose the drain region and an insulating trench; filling the previously-formed opening with a conductive material; polishing the entire structure; and depositing a fourth insulating layer, selectively etchable with respect to the third insulating layer.

Abstract: The microreactor is completely integrated and is formed by a semiconductor body having a surface and housing at least one buried channel accessible from the surface of the semiconductor body through two trenches. A heating element extends above the surface over the channel and a resist region extends above the heating element and defines an inlet reservoir and an outlet reservoir. The reservoirs are connected to the trenches and have, in cross-section, a larger area than the trenches. The outlet reservoir has a larger area than the inlet reservoir. A sensing electrode extends above the surface and inside the outlet reservoir.

Abstract: A vaporizer having a pair of heat exchanger blocks each with a vaporization tube formed therein. The heat exchanger blocks are in face-to-face arrangement and the vaporizer tubes are coupled together in series. A plurality of positive temperature coefficient (PTC) heating elements are clamped in position between the heat exchanger blocks to provide the heat for vaporization of the liquefied gas. A capacity control valve controls the flow of liquefied gas into the vaporizer tubes.

Abstract: The field of the manufacture of electronic components, specifically to manufacturing flexible conductive strips having contact pads thereon, wherein a first set of alignment marks are provided on a substrate. Using the first set of alignment marks, several electronic components are formed in selected positions on the substrate. The electronic components may be formed in various groups, with a first group being formed using a first mask then, subsequent groups being formed using subsequent masks. Each of the respective masks are aligned with the first set of alignment marks in order to position the electronic components formed using the masks at the desired locations on the substrate. A second set of alignment marks are produced using the same mask as a set of electronic components that are located on the substrate. Subsequently, when a different set of features is produced, it is positioned using the second set of alignment marks located on the individual parts.

Abstract: The process comprises the steps of forming, on top of a semiconductor material wafer, a holed mask having a lattice structure and comprising a plurality of openings each having a substantially square shape and a side with an inclination of 45° with respect to the flat of the wafer; carrying out an anisotropic etch in TMAH of the wafer, using said holed mask, thus forming a cavity, the cross section of which has the shape of an upside-down isosceles trapezium; and carrying out a chemical vapor deposition using TEOS, thus forming a TEOS layer which completely closes the openings of the holed mask and defines a diaphragm overlying the cavity and on which a suspended integrated structure can subsequently be manufactured.

Abstract: A process for manufacturing components in a multi-layer wafer, including the steps of: providing a multi-layer wafer comprising a first semiconductor material layer, a second semiconductor material layer (, and a dielectric material layer arranged between the first and the second semiconductor material layer; and removing the first semiconductor material layer initially by mechanically thinning the first semiconductor material layer, so as to form a residual conductive layer, and subsequently by chemically removing the residual conductive layer. In one application, the multi-layer wafer is bonded to a first wafer of semiconductor material, with the second semiconductor material layer facing the first wafer, after micro-electromechanical structures have been formed in the second semiconductor material layer of the multi-layer wafer.

Abstract: A nonvolatile memory having a NOR architecture has a memory array including a plurality of memory cells arranged in rows and columns in NOR configuration, the memory cells arranged on a same column being connected to one of a plurality of bit lines; and a column decoder. The column decoder comprises a plurality of selection stages, each of which is connected to respective bit lines and receives first bit line addressing signals. The selection stages comprise word programming selectors controlled by the first bit line addressing signals and supplying a programming voltage to only one of the bit lines of each selection stage. Each selection stage moreover comprises a string programming selection circuit controlled by second bit line addressing signals thereby simultaneously supplying the programming voltage to a plurality of the bit lines of each selection stage.

Abstract: A circuit for the speed recovery of a direct current motor includes an output stage, output stage having a first pair of transistors, a second pair of transistors, and means a first circuit configured to detect a current circulating in the motor. The output stage further includes a second circuit configured to, activate the second pair transistors for a determined first time period so as to short-circuit the motor, and, at the end of the first time period, unbalance the output stage so as to force a maximum current to circulate for a determined second time period as a function of a value detected by the first circuit during the first time period, so as to stop the motor.