Abstract: An artificial insemination device is formed by attaching a semen filled straw or tube to one end of a pipette to which a syringe is attached at the other end. An anchorable tip is attached to the other end of the semen filled tube. The semen filled tube is attached by forming tapered bores in the pipette and anchorable tip so that semen filled tubes of various diameters can be press fit into the tapered bores. The pipette-tube-tip assembly is inserted into the animal's vagina using a speculum until the tip enters the cervix, and a seal is formed between the tip and cervix by inflating an attached balloon. The syringe, which contains a diluent fluid, is pushed to force semen and diluent fluid out through ejection port(s) in the tip into the animal's uterus. Optimum amounts of semen and diluent fluid can be delivered to various sized animals.

Abstract: Electron emission materials consisting of carbides, borides, and oxides, and related mixtures and compounds, of Group IVB metals Hf, Zr, and Ti, Group IIA metals Be, Mg, Ca, Sr, and Ba, and Group IIIB metals Sc, Y, and lanthanides La through Lu are used in electrodes. The electron emission materials include ternary Group IVB-IIIB and IVB-IIA oxides. These electron emission materials are typically contained in a refractory metal matrix formed of tungsten, tantalum, rhenium, and their alloys, but may also be used by themselves. These materials and electrodes have high melting points, low vapor pressures, low work functions, high electrical and thermal conductivity, and high thermionic electron emission and field emission properties.

Abstract: A password system comprises a set of codewords spaced apart from one another by a Hamming distance (HD) that exceeds twice the variability that can be projected for a series of biometric measurements for a particular individual and that is less than the HD that can be encountered between two individuals. To enroll an individual, a biometric measurement is taken and exclusive-ORed with a random codeword to produce a "reference value." To verify the individual later, a biometric measurement is taken and exclusive-ORed with the reference value to reproduce the original random codeword or its approximation. If the reproduced value is not a codeword, the nearest codeword to it is found, and the bits that were corrected to produce the codeword to it is found, and the bits that were corrected to produce the codeword are also toggled in the biometric measurement taken and the codeword generated during enrollment.

Abstract: The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side.

Abstract: In order to improve the performance of a CCD camera on a high voltage electron microscope, an electron decelerator is inserted between the microscope column and the CCD. This arrangement optimizes the interaction of the electron beam with the scintillator of the CCD camera while retaining optimization of the microscope optics and of the interaction of the beam with the specimen. Changing the electron beam energy between the specimen and camera allows both to be optimized.

Abstract: A lamp system with a very soft high-intensity output is provided over a large area by water cooling a long-arc lamp inside a diffuse reflector of polytetrafluorethylene (PTFE) and titanium dioxide (TiO.sub.2) white pigment. The water is kept clean and pure by a one micron particulate filter and an activated charcoal/ultraviolet irradiation system that circulates and de-ionizes and biologically sterilizes the coolant water at all times, even when the long-arc lamp is off.

Abstract: A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.

Abstract: Refractory ceramics and composite materials consisting of nitrides, carbides, mixed carbides and oxides, oxycarbides, mixed nitrides and oxides, and oxynitrides of Group IVB metals Hf, Zr, and Ti, Group IIA metals Be, Mg, Ca, Sr, and Ba, and Group IIIB metals Sc, Y, and lanthanides La through Lu are used to form refractory articles, or as coatings for refractory articles. These materials and articles have high resistance to molten metals, molten salts, erosion, and high temperature corrosive environments, and can be engineered to have desirable thermal and electrical properties. The refractory materials encompass nitrides, carbides, reacted ternary and quaternary oxides, mixed carbides and oxides, oxycarbides, mixed nitrides and oxides, and oxynitrides and have the general chemical formula M.sub.x1 M'.sub.x2 M".sub.x3 N.sub.y C.sub.w O.sub.z where M is Hf, Zr, or Ti, M' is Be, Mg, Ca, Sr, or Ba, M" is Sc, Y, and lanthanides La through Lu, N is nitrogen, C is carbon, O is oxygen.

Abstract: Electron emission materials consisting of carbides, borides, and oxides, and related mixtures and compounds, of Group IVB metals Hf, Zr, and Ti, Group IIA metals Be, Mg, Ca, Sr, and Ba, and Group IIIB metals Sc, Y and lanthanides La through Lu are used in electrodes. These electron emission materials are typically contained in a refractory metal matrix formed of tungsten, tantalum, rhenium, and their alloys, but may also be used by themselves. These materials and electrodes have high melting points, low vapor pressures, low work functions, high electrical and thermal conductivity, and high thermionic electron emission and field emission properties.

Abstract: Hard coatings are fabricated from boron nitride, cubic boron nitride, and multilayer boron/cubic boron nitride, and the fabrication thereof involves magnetron sputtering in a selected atmosphere. These hard coatings may be applied to tools and engine and other parts, as well to reduce wear on tribological surfaces and electronic devices. These boron coatings contain no morphological growth features. For example, the boron is formed in an inert (e.g. argon) atmosphere, while the cubic boron nitride is formed in a reactive (e.g. nitrogen) atmosphere. The multilayer boron/cubic boron nitride, is produced by depositing alternate layers of boron and cubic boron nitride, with the alternate layers having a thickness of 1 nanometer to 1 micrometer, and at least the interfaces of the layers may be discrete or of a blended or graded composition.

Abstract: Simplicity, sensitivity and versatility of optical sensors based on competitive immunoassays using antibody-antigen reactions are achieved by solid-state, single-step reactions which permit accurate sensitive qualitative and quantitative information to be obtained without human participation. All of the chemistry-biochemistry is an inherent part of the sensor. A direct reaction occurs when the sample (antigen) is brought in contact with the sensor. The sensitivity of the competitive immunoassay optical sensor is controlled and increased by selecting a tag for the antigen or altering the attachment of a tag to an antigen so that the binding of tagged antigen to an antibody is decreased relative to the binding of untagged antigen to the antibody. The user can vary size, molecular weight and geometric configuration of the tagged antigen.

Abstract: The ultra-wideband impedance sensor (UWBZ sensor, or Z-sensor) is implemented in differential and single-ended configurations. The differential UWBZ sensor employs a sub-nanosecond impulse to determine the balance of an impedance bridge. The bridge is configured as a differential sample-and-hold circuit that has a reference impedance side and an unknown impedance side. The unknown impedance side includes a short transmission line whose impedance is a function of the near proximity of objects. The single-ended UWBZ sensor eliminates the reference side of the bridge and is formed of a sample and hold circuit having a transmission line whose impedance is a function of the near proximity of objects. The sensing range of the transmission line is bounded by the two-way travel time of the impulse, thereby eliminating spurious Doppler modes from large distant objects that would occur in a microwave CW impedance bridge. Thus, the UWBZ sensor is a range-gated proximity sensor.

Abstract: The design and operation of a new type of charged-particle trap provides simultaneous measurements of mass, charge, and velocity of large electrospray ions. The trap consists of a detector tube mounted between two sets of center-bored trapping plates. Voltages applied to the trapping plates define symmetrically-opposing potential valleys which guide axially-injected ions to cycle back and forth through the charge-detection tube. A low noise charge-sensitive amplifier, connected to the tube, reproduces the image charge of individual ions as they pass through the detector tube. Ion mass is calculated from measurement of ion charge and velocity following each passage through the detector.

Abstract: Disclosed herewith is a process of forming an aerogel composite which comprises introducing a gaseous material into a formed aerogel monolith or powder, and causing decomposition of said gaseous material in said aerogel in amounts sufficient to cause deposition of the decomposition products of the gas on the surfaces of the pores of the said aerogel.

Abstract: A novel optical position sensor is described that uses two component photodiodes electrically connected in parallel, with opposing polarities. A lens provides optical gain and restricts the acceptance angle of the detector. The response of the device to displacements of an optical spot is similar to that of a conventional bi-cell type position sensitive detector. However, the component photodiode design enables simpler electronic amplification with inherently less electrical noise than the bi-cell. Measurements by the sensor of the pointing noise of a focused helium-neon laser as a function of frequency demonstrate high sensitivity and suitability for optical probe beam deflection experiments.

Abstract: Systems employing passive magnetic bearing elements having minimal power losses are provided. Improved stabilizing elements are shown, employing periodic magnet arrays and inductively loaded circuits, but with improved characteristics compared to the elements disclosed in U.S. Patent No. 5,495,221 entitled "Dynamically Stable Magnetic Suspension/Bearing System." The improvements relate to increasing the magnitude of the force derivative, while at the same time reducing the power dissipated during the normal operation of the bearing system, to provide a passive bearing system that has virtually no losses under equilibrium conditions, that is, when the supported system is not subject to any accelerations except those of gravity.

Abstract: A miniature (dime-size in cross-section) vapor vacuum arc plasma gun is described for use in an apparatus to produce thin films. Any conductive material can be layered as a film on virtually any substrate. Because the entire apparatus can easily be contained in a small vacuum chamber, multiple dissimilar layers can be applied without risk of additional contamination. The invention has special applications in semiconductor manufacturing.

Abstract: The encephalolexianalyzer uses digital signal processing techniques on electroencephalograph (EEG) brain waves to determine whether or not someone is thinking about moving, e.g., tapping their fingers, or, alternatively, whether someone is actually moving, e.g., tapping their fingers, or at rest, i.e., not moving and not thinking of moving. The mu waves measured by a pair of electrodes placed over the motor cortex are signal processed to determine the power spectrum. At rest, the peak value of the power spectrum in the 8-13 Hz range is high, while when moving or thinking of moving, the peak value of the power spectrum in the 8-13 Hz range is low. This measured change in signal power spectrum is used to produce a control signal. The encephalolexianalyzer can be used to communicate either directly using Morse code, or via a cursor controlling a remote control; the encephalolexianalyzer can also be used to control other devices.

Abstract: A manufacturable process for fabricating electrical interconnects which extend from a top surface of an integrated circuit chip to a sidewall of the chip using laser pantography to pattern three dimensional interconnects. The electrical interconnects may be of an L-connect or L-shaped type. The process implements three dimensional (3D) stacking by moving the conventional bond or interface pads on a chip to the sidewall of the chip. Implementation of the process includes: 1) holding individual chips for batch processing, 2) depositing a dielectric passivation layer on the top and sidewalls of the chips, 3) opening vias in the dielectric, 4) forming the interconnects by laser pantography, and 5) removing the chips from the holding means. The process enables low cost manufacturing of chips with bond pads on the sidewalls, which enables stacking for increased performance, reduced space, and higher functional per unit volume.

Abstract: A level detector or proximity detector for materials capable of sensing through plastic container walls or encapsulating materials is of the sensor. Thus, it can be used in corrosive environments, as well as in a wide variety of applications. An antenna has a characteristic impedance which depends on the materials in proximity to the antenna. An RF oscillator, which includes the antenna and is based on a single transistor in a Colpitt's configuration, produces an oscillating signal. A detector is coupled to the oscillator which signals changes in the oscillating signal caused by changes in the materials in proximity to the antenna. The oscillator is turned on and off at a pulse repetition frequency with a low duty cycle to conserve power. The antenna consists of a straight monopole about one-quarter wavelength long at the nominal frequency of the oscillator.