Abstract: An exercise device that accommodates stretching and toning exercises otherwise performed with an exercise ball. The device comprises a stable support structure and a padded bench that rocks back and forth on the stable support structure safely and predictably in response to the user's movements. The support structure can take a variety of different forms, including an A-frame geometry, a triangular geometry, a T-shaped geometry, and in the form of a pedestal base. A user, during exercise, can support part of his weight on the bench, and cause the bench to rock back and forth by alternately relaxing and contracting selected muscles.

Abstract: A suspension system for a bicycle comprising a rear wheel mounting member (4), a chassis member (2), an upper linkage (6) pivotally connected to the rear wheel mounting member and the chassis member at first (P1) and second (P2) pivot points respectively and a lower linkage (8) pivotally connected to the rear wheel mounting member and the chassis member at third (P3) and fourth (P4) pivot points respectively thereby forming a four-bar linkage system, characterised in that the length of the upper linkage (6) between the first and second pivot point and the length of the lower linkage (8) between the third and fourth pivot points are both are greater than the separation between the second and fourth pivot points. An embodiment includes a jockey wheel or idler pulley which provides a tensioned portion of chain which passes through the instant centre of rotation (IC).

Abstract: A solid state lighting device includes a device-scale stamped heatsink with a base portion and multiple segments or sidewalls projecting outward from the base portion, and dissipates all steady state thermal load of a solid state emitter to an ambient air environment. The heatsink is in thermal communication with one or more solid state emitters, and may define a cup-like cavity containing a reflector. At least a portion of each one sidewall portion or segment extends in a direction non-parallel to the base portion. A dielectric layer and at least one electrical trace may be deposited over a metallic sheet to form a composite sheet, and the composite sheet may be processed by stamping and/or progressive die shaping to form a heatsink with integral circuitry. At least some segments of a heatsink may be arranged to structurally support a lens and/or reflector associated with a solid state lighting device.

Abstract: Systems and methods for providing knowledge and online access to knowledge resources to users are disclosed. Features embodied in various embodiments include: 1) linking members of communities with mentors and subject matter experts that can help the member derive value from their online experience; 2) assessing and delivering online knowledge at a participant level; 3) pushing knowledge resources to participants based on the participant profile; 4) creating and updating an online personal growth plan; and 5) tracking value by participant or by community, as required by community leadership.

Abstract: A process system adapted for processing of or with a material therein. The process system includes: a sampling region for the material; an infrared photometric monitor constructed and arranged to transmit infrared radiation through the sampling region and to responsively generate an output signal correlative of the material in the sampling region, based on its interaction with the infrared radiation; and process control means arranged to receive the output of the infrared photometric monitor and to responsively control one or more process conditions in and/or affecting the process system.

Abstract: A Group III-V nitride microelectronic device structure including a delta doped layer and/or a doped superlattice. A delta doping method is described, including the steps of: depositing semiconductor material on a substrate by a first epitaxial film growth process; terminating the deposition of semiconductor material on the substrate to present an epitaxial film surface; delta doping the semiconductor material at the epitaxial film surface, to form a delta doping layer thereon; terminating the delta doping; resuming deposition of semiconductor material to deposit semiconductor material on the delta doping layer, in a second epitaxial film growth process; and continuing the semiconductor material second epitaxial film growth process to a predetermined extent, to form a doped microelectronic device structure, wherein the delta doping layer is internalized in semiconductor material deposited in the first and second epitaxial film growth processes.

Abstract: A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm?2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour. Nuclear transmutation doping may be applied to an (Al,Ga,In)N article comprises a boule, wafer, or epitaxial layer.

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Abstract: A speculum cover that is adapted to sheath the blades of a speculum, and to support lateral vaginal walls to facilitate vaginal/cervical examination during gynecological exams and surgery. The speculum cover includes top and bottom pockets for the respective blades of the speculum, and side portions having openings therein for sampling of tissue at the vaginal locus. In a specific implementation, the speculum cover is of a four-ply construction, formed by impulse welding or other polymeric film joining technique, and the two inner plies of the cover include rearwardly extending flaps to which are adhesively secured donning guide members for facilitating installation of the cover on the speculum.

Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 ?m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10?2 ?m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.