Abstract: A charge retention characteristic of a nonvolatile memory transistor is improved. A first insulating film that functions as a tunnel insulating film, a charge storage layer, and a second insulating film are sandwiched between a semiconductor substrate and a conductive film. The charge storage layer is formed of two silicon nitride films. A silicon nitride film which is a lower layer is formed using NH3 as a nitrogen source gas by a CVD method and contains a larger number of N—H bonds than the upper layer. A second silicon nitride film which is an upper layer is formed using N2 as a nitrogen source gas by a CVD method and contains a larger number of Si—H bonds than the lower layer.

Abstract: An ink set for inkjet recording including an ink composition including a dispersion of a pigment dispersed by a water-insoluble polymer which is formed by copolymerizing a monomer mixture containing a styrenic macromer, as well as self-dispersing polymer particles, a water-soluble organic solvent, and water; and a reactive liquid which forms an aggregate when contacted with the ink composition; and an image recording method using the ink set, are provided.

Abstract: A transdermal analgesic applicator configured to provide a visual signal subsequent sufficient absorption of an analgesic compound ensuing the transdermal analgesic applicator being applied to the skin of a patient. The transdermal analgesic applicator includes a first layer that is impermeable and has integrally formed therewith on at least a portion thereof a plurality of microcapsules containing a thermochromic dye mixture. The first layer having the portion of microcapsules presents a first color at ambient room temperature and a second color at temperature greater than the first temperature as a result of being placed on the skin of a patient. A second layer containing an analgesic compound is secured to the first layer. The first layer changes from the first color to the second color subsequent the first layer changing from the first temperature to the second temperature, which the rate of temperature change is approximately equivalent to the absorption rate of the analgesic compound.

Abstract: The present invention improves efficiency in utilizing grid computing and promotes spread of the grid computing by solving problems of security technology and distributed computer resource management technology. The present invention improves security technology and distributed computer resource management technology that are problems in improving in efficiency and spread of grid computing. Based on an idea that a mechanism for supporting these control technology is required in a microprocessor level, an auxiliary system for supporting security technology and distributed computer resource management is provided in a software area in a microprocessor comprising a hardware area and the software area, according to the present invention.

Abstract: A thermosensitive recording material including, on a support having a type D durometer hardness of 40 or more as defined in accordance with ISO 7619:2004, and sequentially from the support side, an undercoating layer having a dynamic microhardness at 25° C. of 5.0 mN or less; and a thermosensitive color-forming layer containing an electron-donating dye precursor and an electron-accepting compound for thermal color-formation of the electron-donating dye precursor.

Abstract: A USB connector is disclosed, which includes a first insulating body, a second insulating body, a plurality of first and second terminals, a first cover, and a second cover. A first module is defined by the first insulating body, the first terminals, and the first cover. A second module is defined the by second insulating body, the second terminals, and the second cover. The first and second modules are movably coupled relative to each other, for using independently or jointly.

Abstract: Embodiments of the present invention are directed to a tonnage regulating structure and a mold incorporating same. For example, a tonnage regulating structure (302, 1002, 1202) for use in a mold (502) of a molding machine, the mold (502) being associated with an opening clearance (520) between mold faces in a mold closed and clamped configuration, is provided. The tonnage regulating structure (302) comprises a body (304, 1040, 1240) having a first height (306) in a resting configuration, the first height (306) selected to be larger than the opening clearance (520) between the mold faces in a mold closed and clamped configuration; the body (304, 1040, 1240) including a compensating structure (308), the compensating structure (308) for regulating, in use under applied clamp tonnage, the body (304, 1040, 1240) to a second height (320), the second height (320) being smaller than the first height (306).

Abstract: A bond substrate is irradiated with accelerated ions to form an embrittled region in the bond substrate; an insulating layer is formed over a surface of the bond substrate or a base substrate; the bond substrate and the base substrate are bonded to each other with the insulating layer interposed therebetween; a region in which the bond substrate and the base substrate are not bonded to each other and which is closed by the bond substrate and the base substrate is formed in parts of the bond substrate and the base substrate; the bond substrate is separated at the embrittled region by heat treatment; and a semiconductor layer is formed over the base substrate.

Abstract: Improved blow-molded wheels, methods for producing the same, and children's ride-on vehicles including the same are disclosed. The blow-molded wheels may include a blow-molded body that has a tread surface, first and second sidewalls and an axis. The body may be configured to rotate about the axis. The tread surface may extend circumferentially around the body and may extend between the first and second sidewalls. A first region of the tread surface may be disposed between the first sidewall and the central circumference of the blow-molded body. A second region of the tread surface may be disposed between the second sidewall and the central circumference of the blow-molded body. A recessed region may be positioned between the first region and the second region with the radial distance to the recessed region being less than the radial distances to the first and second regions.

Abstract: An object of the present invention is to provide a rectifier circuit which can suppress loss of power due to parasitic capacitance or parasitic inductance of a semiconductor element. The rectifier circuit matches or mismatches impedance between a circuit of a previous stage and the rectifier circuit in accordance with the amplitude of an input AC voltage. When an AC voltage to be input has a smaller amplitude than a predetermined voltage, impedance is matched and the AC voltage is applied as is to the rectifier circuit. Conversely, when an AC voltage to be input has a larger amplitude than a predetermined voltage, impedance is mismatched, and the amplitude of the AC voltage is decreased by reflection and then the AC voltage is applied to the rectifier circuit.

Abstract: A semiconductor substrate is provided by a method suitable for mass production. Further, a semiconductor substrate having an excellent characteristic with effective use of resources is provided.

Abstract: A check valve (36, 136) for a screw (24) is provided. The check valve (36, 136) includes a retainer tip (54, 154), operable to be attached to a distal end of a screw shaft (52, 152), the retainer tip (54, 154) defining at least one melt channel (30). A first ring (60) is coaxially mounted to and rotationally-coupled with the retainer tip (54, 154). A second ring (66) is coaxially and slidably mounted to the retainer tip (54, 154), and is operable to rotate relative to the retainer tip (54, 154). The second ring (66) is operable to reversibly move between an open position which permits melt to flow through the check valve (36, 136) and a closed position which prevents backflow of the melt.

Abstract: A filter cartridge, which is suitable in particular for purifying dental waste waters, has a housing with three different spatial regions which receive three different filter materials having different filter properties. The first filter material is preceded by a sedimentation space.

Abstract: An ink set which includes an ink composition including a pigment, polymer particles having a glass transition temperature of 70° C. or more and a volume average particle size of 70 nm or lower, and a water-soluble polymerizable compound that undergoes polymerization when irradiated with an active energy ray; and a treatment liquid including an aggregating agent for aggregating components in the ink composition, and an image forming method, including an ink applying process for applying the ink composition; and a treatment liquid applying process for applying the treatment liquid, are provided.

Abstract: To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.

Abstract: The object is to suppress deterioration in electrical characteristics in a semiconductor device comprising a transistor including an oxide semiconductor layer. In a transistor in which a channel layer is formed using an oxide semiconductor, a p-type silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the p-type silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the p-type silicon layer is not provided.