Abstract: The present invention relates to systems and processes for producing syngas in steam methane reformer (SMR)-based plants, particularly to the use of a high space velocity, dual mode catalytic reactor to pre-reform plant feedstock. The dual mode reactor has the capability to operate in two modes: either without oxygen addition in a reforming mode or with oxygen addition in a partial oxidation-reforming mode. The dual mode reactor allows the syngas production rate of the plant to be manipulated without the added capital expense of a reheat coil and with reduced impact on export steam production.

Abstract: A process and system for recovering valuable by-products (e.g., hydrogen) from refinery gas streams. For hydrogen-only recovery, the invention comprises a partial condensation step to upgrade the refinery fuel gas to a minimum of 60% hydrogen, which is further purified in a pressure swing adsorption process. When configured to recover hydrogen, methane-rich gas and raw LPG (methane depleted gas containing C2 hydrocarbons and heavier), the invention comprises two partial condensation steps where the feed is cooled in the first step to allow separation of ethane and heavier hydrocarbons, and the resulting vapor is cooled to a lower temperature in a second step for hydrogen recovery.

Abstract: The present invention relates generally to zeolites having a silica/alumina ratio of less than or equal to 10 (Si/Al?10) that are exchanged with Ag+ and thermally treated in such a way to favor adsorption over alternative catalytic and chemically reactive functionalities. The adsorbents of the present invention and the method of producing such adsorbents maximize the working adsorption capacity through ?-complexation. Applications for such adsorbents include any process in which contaminants from gas streams can form ?-complexes with the Ag in the zeolite, particularly the removal of CO, ethylene, propylene and the like from air and CO/H2 from air in prepurifier adsorbers in the production of ultra high purity (UHP) N2.

Abstract: A heat exchange system and processes for a magnetic annealing tool is provided. The system includes a process chamber housing workpieces to be processed; an element chamber partly surrounding the periphery of the process chamber, at least one means for drawing a vacuum in fluid communication with the process chamber and separately with the element chamber in order to apply a vacuum to either or both of the process and element chamber so as to promote radiation heating of the workpieces; at least one supply of fluid in communication with the process chamber and separately with the element chamber to supply a cooling gas so as to promote conductive cooling of the workpieces; a cooling chamber disposed to surround the element chamber; and means for generating a magnetic field disposed on the outer periphery of the cooling chamber.

Abstract: A system for supplying a reagent to multiple tools in an electronics fabrication facility is configured using a demand probability distribution. In specific examples the reagent is a non-atmospheric or a specialty gas and the demand probability distribution is developed using Monte Carlo statistical techniques. In one embodiment, a method for configuring a reagent supply system for an electronic device manufacturing facility is provided. The method includes (a) collecting representative information for process tools within the fabrication facility which use the reagent; (b) creating a simulation of process tool operation to model an overall demand profile for the process tools; (c) creating a statistical probability distribution of the reagent demand by the process tools using data from the model; and (d) correlating data from the probability distribution with supply system characterization data to configure the supply system.

Abstract: The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent each of (111), (200), (220) and (311). In addition, the sputter target has a grain size of less than about 10 ?m for improving sputter uniformity and reducing sputter target arcing.

Abstract: This invention relates to processes for the production of organometallic compounds represented by the formula M(L)3 wherein M is a Group VIII metal, e.g., ruthenium, and L is the same or different and represents a substituted or unsubstituted amidinato group or a substituted or unsubstituted amidinato-like group, which process comprises (i) reacting a substituted or unsubstituted metal source compound, e.g., ruthenium (II) compound, with a substituted or unsubstituted amidinate or amidinate-like compound in the presence of a solvent and under reaction conditions sufficient to produce a reaction mixture comprising said organometallic compound, e.g., ruthenium (III) compound, and (ii) separating said organometallic compound from said reaction mixture. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: This invention relates to a vapor or liquid phase reagent dispensing apparatus having a diptube and also a metal seal aligned and in contact with hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Abstract: This invention relates to organometallic precursor compounds represented by the formula (Cp(R?)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

Abstract: This invention relates to organometallic compounds represented by the formula LML? wherein M is a metal or metalloid, L is a substituted or unsubstituted cyclopentadienyl group or cyclopentadienyl-like group, a substituted or unsubstituted pentadienyl group or pentadienyl-like group, or a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, and L? is a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: This invention relates to organometallic compounds represented by the formula M(NR1R2)x wherein M is a metal or metalloid, R1 is the same or different and is a hydrocarbon group or a heteroatom-containing group, R2 is the same or different and is a hydrocarbon group or a heteroatom-containing group; R1 and R2 can be combined to form a substituted or unsubstituted, saturated or unsaturated cyclic group; R1 or R2 of one (NR1R2) group can be combined with R1 or R2 of another (NR1R2) group to form a substituted or unsubstituted, saturated or unsaturated cyclic group; x is equal to the oxidation state of M; and wherein said organometallic compound has (i) a steric bulk sufficient to maintain a monomeric structure and a coordination number equal to the oxidation state of M with respect to anionic ligands, and (ii) a molecular weight sufficient to possess a volatility suitable for vapor deposition; a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic

Abstract: This invention relates to organometallic compounds represented by the formula (L1)xM(L2)y wherein M is a metal or metalloid, L1 and L2 are different and are each a hydrocarbon group or a heteroatom-containing group; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) L1 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) L2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) L1 and L2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M; a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.

Abstract: Disclosed herein is a process for producing a film, coating or powder employing a metallocene or metallocene-like precursor having the general formula CpMCp?, where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D1, where D1 is X; Ca1Hb1Xc1; Ca2Hb2Xc2(C?O)Ca1Hb1Xc1; Ca2Hb2Xc2OCa1Hb1Xc1; Ca2Hb2Xc2(C?O)OCa1Hb1Xc1; or Ca2Hb2Xc2O(C?O)Ca1Hb1Xc1; and Cp? is a second substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D1?, where D1? is X; Ca1Hb1Xc1; Ca2Hb2Xc2(C?O)Ca1Hb1Xc1; Ca2Hb2Xc2OCa1Hb1Xc1; Ca2Hb2Xc2(C?O)OCa1Hb1Xc1; or Ca2Hb2Xc2O(C?O)Ca1Hb1Xc1. D1 and D1? are different from one another.

Abstract: The invention relates to a re-configured valve design to accommodate a high volume of product in the delivery system and the dispensation of product upon the application of a predetermined vacuum condition on the downstream side of the valve.

Abstract: A method for aligning the sputter target onto a backing plate having a peripheral arcuate-shaped flange on its bonding surface to provide an aligned and uniform solder bonded interface; and the sputter target/backing plate assembly so produced.

Abstract: This invention relates to processes for the production of organometallic compounds represented by the formula M(L)3 wherein M is a Group VIII metal, e.g., ruthenium, and L is the same or different and represents a substituted or unsubstituted amidinato group or a substituted or unsubstituted amidinato-like group, which process comprises (i) reacting a substituted or unsubstituted metal source compound, e.g., ruthenium (II) compound, with a substituted or unsubstituted amidinate or amidinate-like compound in the presence of a solvent and under reaction conditions sufficient to produce a reaction mixture comprising said organometallic compound, e.g., ruthenium (III) compound, and (ii) separating said organometallic compound from said reaction mixture. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: Systems, apparatuses and methods for vapor phase fluid delivery to a desired end use are provided, wherein the conditions of the system are monitored to determine when the water concentration or supply vessel surface temperature exceeds a specified value or when the low vapor pressure fluid pressure falls below a specified value for the purpose of removing a first supply vessel from service by discontinuing vapor flow from the first supply vessel and initiating vapor flow from a second supply vessel.

Abstract: This invention relates to a method for sealing porosity of at least a portion of an outer porous surface of an article, said method comprising (i) applying a sealant solution on the outer porous surface of said article, (ii) infiltrating at least a portion of the outer porous surface with said sealant solution, and (iii) allowing the infiltrated sealant solution to react, thereby forming an infiltrated solid precipitate, said infiltrated solid precipitate sealing the porosity of at least a portion of the outer porous surface of said article. The method is useful, for example, in the protection of integrated circuit manufacturing equipment, internal chamber components, and electrostatic chuck manufacture.

Abstract: A system for delivering vapor phase fluid at an elevated pressure from a transport vessel containing liquefied or two-phase fluid is provided. The system includes: (a) a transport vessel positioned in a substantially horizontal position; (b) one or more energy delivery elements disposed on the lower portion of the transport vessel wherein the energy delivery devices include a heating means and a first insulation means, wherein the energy delivery devices are configured to the contour of the transport vessel; (c) one or more substantially rigid support devices disposed on the outer periphery of the energy delivery devices, wherein the support devices hold the energy delivery devices in thermal contact with a lower portion of the transport vessel; and (d) one or more attaching devices secure the rigid support devices onto the transport vessel and hold the energy delivery devices between the substantially rigid support device and a wall of the transport vessel.

Abstract: The present invention relates to methods for improving deposited film uniformity and controlling the erosion of sputter targets. Improved methods for achieving predetermined microstructure orientation in copper hollow cathode magnetron (HCM) sputter targets and targets prepared by such methods are disclosed.