Abstract: The present invention relates to methods and systems for purifying gases, such as for example semiconductor process gases. The invention more particularly relates to fluid purification methods and systems having improved heat transfer capabilities and controls such that the purified fluid produced from the process contains reduced impurity levels and/or exhibits more uniform concentrations within the final product. In another aspect of the invention, the activation time for adsorbent beds used in such processes and systems can be reduced.

Abstract: A precious metal sputter target has a composition selected from the group consisting of platinum, palladium, rhodium, iridium, ruthenium, osmium and single-phase alloys thereof. The sputter target's grain structure is at least about 99 percent recrystallized and has a grain size of less than about 200 ?m for improving sputter uniformity. The cryogenic method for producing these sputter targets is also effective for improving sputter performance for silver an gold sputter targets.

Abstract: The present invention relates to the use of expensive and highly selective adsorbents and catalysts for trace contaminant gas removal to generate products of high and ultra-high purity. Mixing such highly selective materials with other less expensive, less selective materials results in the ability to achieve higher purity, higher capacity and/or lower cost without adding additional expensive selective material.

Abstract: This invention relates to organometallic precursor compounds represented by the formula i-PrN?Ta(NR1R2)3 wherein R1 and R2 are the same or different and are alkyl having from 1 to 3 carbon atoms, provided that (i) when R1 is ethyl, then R2 is other than ethyl and (ii) when R2 is ethyl, then R1 is other than ethyl, and a method for producing a film, coating or powder from the organometallic precursor compounds.

Abstract: A method for aligning the sputter target onto a backing plate having a peripheral arcuate-shaped flange on its bonding surface to provide an aligned and uniform solder bonded interface; and the sputter target/backing plate assembly so produced.

Abstract: Foam for making pads and belts with controlled, reproducible microcellular structure and method of making such foam in a fast and efficient manner. Under constant pressure and temperature, a prepolymer is mixed with the nucleation surfactant in a tank in the presence of a frothing agent metered into the tank by way of a dip tube or sparge. The nitrogen gas is sheared into small bubbles and is drawn off from the headspace of the tank creating a continuous flow of nitrogen. The pressure of the tank may vary from any absolute pressure down to near complete vacuum, thereby all but eliminating the pressure requirement. The froth of the present invention has a more consistent cell structure and increased cell count.

Abstract: A high pressure storage and delivery system having a fail-safe vacuum actuated valve is provided. In particular, through the innovative design of the vacuum actuated check valve, the system can accommodate up to three times the volume of product in similar size cylinders.

Abstract: The present invention discloses an electrostatic chuck for clamping work substrates, said chuck comprising three layers, where the dielectric constant of included non-conductive layers is selected to provide overall lower capacitance to the chuck. In the chuck assembly of the present invention, the top dielectric layer that is in contact with a substrate, such as, a wafer, has a dielectric constant that is preferably greater than about 5, with a resistivity that is preferably greater than about 1E6 ohm.m, whereas the bottom dielectric layer has a dielectric constant that is preferably less than about 5 and a resistivity that is preferably greater than about 1E10 ohm.m. The intermediate layer preferably has a conductive layer where the resistivity is less than about 1 ohm.m.

Abstract: This invention relates to high nucleation density organometallic ruthenium compounds. This invention also relates to a process for producing a high nucleation density organometallic ruthenium compound comprising reacting a bis(substituted-pentadienyl)ruthenium compound with a substituted cyclopentadiene compound under reaction conditions sufficient to produce said high nucleation density organometallic ruthenium compound. This invention further relates to a method for producing a film, coating or powder by decomposing a high nucleation density organometallic ruthenium compound precursor, thereby producing the film, coating or powder.

Abstract: The present invention relates generally to zeolites having a silica/alumina ratio of less than or equal to 10 (Si/Al?10) that are exchanged with Ag+ and thermally treated in such a way to favor adsorption over alternative catalytic and chemically reactive functionalities. The adsorbents of the present invention and the method of producing such adsorbents maximize the working adsorption capacity through ?-complexation. Applications for such adsorbents include any process in which contaminants from gas streams can form ?-complexes with the Ag in the zeolite, particularly the removal of CO, ethylene, propylene and the like from air and CO/H2 from air in prepurifier adsorbers in the production of ultra high purity (UHP) N2.

Abstract: A method for the enhanced melt-textured growth of superconducting crystals is disclosed for a sample having a first material capable of exhibiting superconducting properties. The sample is heated above a peritectic temperature of the first material, cooled below the peritectic temperature, and is subsequently subjected to a plurality of temperature spikes in which the sample is rapidly reheated above the peritectic temperature and recooled below the peritectic temperature to produce a superconducting crystalline structure substantially free of secondary nucleations. The resulting crystal is a superconducting crystalline structure comprising a plurality of bands formed in succession around a seed material. Each band has a non-uniform microstructure from an inner portion to an outer portion of the band.

Abstract: This invention relates to organometallic compounds represented by the formula LML? wherein M is a metal or metalloid, L is a substituted or unsubstituted cyclopentadienyl group or cyclopentadienyl-like group, a substituted or unsubstituted pentadienyl group or pentadienyl-like group, or a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, and L? is a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: This invention relates to organoaluminum precursor compounds represented by the formula: wherein R1, R2, R3 and R4 are the same or different and each represents hydrogen or an alkyl group having from 1 to about 3 carbon atoms, and R5 represents an alkyl group having from 1 to about 3 carbon atoms. This invention also relates to processes for producing the organoaluminum precursor compounds and a method for producing a film or coating from the organoaluminum precursor compounds.

Abstract: The method manufactures high-purity ferromagnetic sputter targets by cryogenic working the sputter target blank at a temperature below at least ?50° C. to impart at least about 5 percent strain into the sputter target blank to increase PTF uniformity of the target blank. The sputter target blank is a nonferrous metal selected from the group consisting of cobalt and nickel; and the nonferrous metal has a purity of at least about 99.99 weight percent. Finally, fabricating the sputter target blank forms a sputter target having an improved PTF uniformity arising from the cryogenic working.

Abstract: The present invention relates to a method and apparatus for real-time monitoring and controlling surface area erosion of a sputter target assembly utilized in a physical vapor deposition process.

Abstract: This invention relates to organometallic precursor compounds represented by the formula (L)M(L?)2(NO) wherein M is a Group 6 metal, L is a substituted or unsubstituted anionic ligand and L? is the same or different and is a ? acceptor ligand, a process for producing the organometallic precursor compounds, and a method for producing a film, coating or powder from the organometallic precursor compounds.

Abstract: This invention relates to organometallic precursor compounds represented by the formula (Cp(R?)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

Abstract: This invention comprises an adsorption process for the removal of at least N2O from a feed gas stream that also contains nitrogen and possibly CO2 and water. In the process the feed stream is passed over adsorbents to remove impurities such as CO2 and water, then over an additional adsorbent having a high N2O/N2 separation factor. In a preferred mode the invention is an air prepurification process for the removal of impurities from air prior to cryogenic separation of air. An apparatus for operating the process is also disclosed.

Abstract: Trace amounts of carbon monoxide and optionally hydrogen are removed from gaseous feed streams by passing the feed stream through a carbon monoxide adsorbent (33) prior to passing it through a supported metal catalyst (34). The invention saves significant capital and operational costs over existing processes.

Abstract: A heat exchange system and processes for a magnetic annealing tool is provided. The system includes a process chamber housing workpieces to be processed; an element chamber partly surrounding the periphery of the process chamber, at least one vacuum for drawing a vacuum in fluid communication with the process chamber and separately with the element chamber in order to apply a vacuum to either or both of the process and element chamber so as to promote radiation heating of the workpieces; at least one supply of fluid in communication with the process chamber and separately with the element chamber to supply a cooling gas so as to promote conductive cooling of the workpieces; a cooling chamber disposed to surround the element chamber; and magnetic field generator for generating a magnetic field disposed on the outer periphery of the cooling chamber.