Abstract: A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

Abstract: The present invention provides novel haloenol lactones that are effective as active site inhibitors of cholesterol esterase. By inhibiting cholesterol esterase the inhibitors of the present invention provide a new approach to the treatment of hypercholesterolemia through limiting the bioavailability of dietary cholesterol.

Abstract: In one embodiment, the present invention provides a biopolymer-containing monolayer comprising: thiol-derivatized biopolymers and organic thiols bound to a metal substrate. In another embodiment, the present invention provides a method for forming this biopolymer-containing monolayer. Preferably, the biopolymers are single-stranded DNA probes.

Abstract: An improved connector is provided. The connector comprises: an optoelectronic transducer having a transducer axis through a center of the optoelectronic transducer, and a first alignment means integrated with the optoelectronic transducer; an optical fiber having a fiber axis being different than the transducer axis; a first lens comprising a ball lens disposed between the optoelectronic transducer and the optical fiber, a center of the first lens aligned to the optoelectronic transducer axis by the first alignment means; and a second lens between the optical fiber and the first lens, a center of the second lens aligned to the fiber axis by a second alignment means; wherein the first and second lenses form an optical relay which relays light between the center of the optoelectronic transducer and the center of the optical fiber, forming an efficient optical coupling between the optoelectronic transducer and the optical fiber, even though the transducer axis and the fiber axis do not coincide.

Abstract: The invention provides deoxygossylic compounds having useful biological activities, and methods for the synthesis of these and related compounds. The invention further provides valuable intermediates for the synthesis of the compounds, and pharmaceutical compositions containing biologically active compounds according to the invention.

Abstract: A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.

Abstract: The present invention provides a speculum having two half-beaks each linked to an elongated lever member. The speculum includes one or more pivot devices which cause the distal end of the two half-beaks to rotate away from each other when the proximal ends of the lever members are rotated towards each other. The present invention also provides a method for inserting an elongated instrument into an animal's body comprising the steps of: making an incision in an animal's skin; inserting a speculum having two half-beaks through the incision into the animal's body; opening the two half-beaks to permit an elongated instrument to be inserted therethrough; and inserting an elongated instrument through the two-half beaks and into the animal's body.

Abstract: A method for producing an electrically conductive element is provided in which an oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation.

Abstract: A computer system is provided that allows a user to switch between at least two networks having different levels of security without transferring data between the two networks. The computer system comprises a standard computer which includes a central processing unit (CPU) coupled to a random access memory (RAM), a power supply and a reset switch. The computer is coupled to each of two different network cards, each of which is in turn connected to a separate storage device, such as a hard drive. Each combination of a network card connected to a storage device constitutes a network. As in a standard computer, activating the reset switch reboots the CPU and clears the RAM. A user chooses between the two networks by using a rotary switch, a rocker switch, or a push button switch which activates one of the networks or the reset switch.

Abstract: In one aspect, the present invention provides a travel garment bag having a cover with an opening through which items to be carried within the bag may be inserted; a wire box inflexible frame enclosed within and supporting the cover; and a hanging strap attached to the inflexible frame and capable of extending through a second opening in a top wall of the cover. The hanging strap includes a strap having a hook and ring attached to opposite ends thereof. In order to hang the garment bag on a horizontal rod, such as a closet rod, the strap is wrapped around the rod and the hook is hooked on the ring.

Abstract: A method for fabricating a semiconductor device is provided in which a first layer having a first conductivity type is grown, a current aperture region comprising at least one layer of an oxidizable material is grown, a second layer is grown, an impurity material is diffused through a first region of the layer of oxidizable material to decrease the susceptibility to oxidation in the first region and to provide a conductive channel through the layer of oxidizable material, the semiconductor device is etched to expose a sidewall of the oxidizable layer, and the oxidizable layer is oxidized in a region outside of the first region to form an oxidized region while leaving at least a portion of the first region non-oxidized to form a current aperture in the oxidizable layer.

Abstract: A lens having at least one oxidized layer is provided. Numerous structures for the lens are discussed. Additionally, methods for manufacturing the lens are also discussed. The methods include: 1) variation in thickness of oxidizable layers; 2) variation in thickness of non-oxidizable layers; 3) variation in Al concentration of oxidizable layers; 4) variation in Al concentration of non-oxidizable layers; 5) variation in doping concentration of oxidizable layers; 6) use of interdiffusion between oxidizable and non-oxidizable; 7) local variation in ion implantation dose; and 8) variation in mesa diameter.

Abstract: An improved semiconductor device is provided. The semiconductor device comprises a first layer on a restricted growth surface having a first central region with a transverse dimension D and having a first average lattice constant L.sub.1 within the first central region; a first, last and at least one intermediate transition layers, the transition layers forming a transition region, the transition region disposed above the first layer, the transition region having a vertical thickness T, and where at least one of the intermediate transition layers has average lattice constants between L.sub.1 and a second average lattice constant L.sub.c where the first transition layer has a lattice constant closer to the L.sub.1 than L.sub.c and the last transition layer has a lattice constant closer to the L.sub.c than L.sub.1 ; and a second layer disposed on the transition region, the second layer having a second average lattice constant L.sub.

Abstract: An improved semiconductor structure is provided. The semiconductor structure comprises a first layer, the first layer having a restricted growth surface having a region with a transverse dimension D, the first layer having a first lattice constant L.sub.1 ; a first, last and at least one intermediate transition layers, the transition layers forming a transition region, the transition region disposed above the first layer, the transition region having a vertical thickness T, and where at least one of the transition layers has lattice constants between L.sub.1 and a second lattice constant L.sub.2 where the first transition layer has a lattice constant closer to the L.sub.1 than L.sub.2 and the last transition layer has a lattice constant closer to the L.sub.2 than L.sub.1 ; and a second layer disposed on the transition region, the second layer having the second lattice constant L.sub.2 ; wherein: the transition region has an average fractional change in lattice constant characterized by .kappa. where .kappa.

Abstract: A gear-cutting machine contains one driving motor (28) with a corresponding actuator (26a, 26c . . . ) for each of various adjusting axes (B, C, X, Z . . . ). The actuators are supplied from a common dc intermediate circuit (24) and controlled by a controller (30). The dc intermediate circuit (24) is supplied by a rectifier circuit (22) from the network (20). For defined stopping of at least some of the driving motors (28) of the adjusting axes an emergency power supply is provided. The emergency power supply contains an ac motor (34) with a disk flywheel (36) mounted on the output shaft (38) thereof. In generating service of the ac motor (34) the latter provides direct-voltage energy to the ac intermediate circuit (34) via the actuator/rectifier (40). This energy suffices for at least some of the driving motors (28) to be brought into a state of rest by their corresponding actuators in controlled fashion. This avoids errors when operation of the machine is continued.

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: An improved lens structure is provided which reduces the scattering and/or reflection losses in an optical cavity. The lens comprising at least a first, second and third lens layer arranged vertically, the first and third lens layers being oxidized in first and third oxidized regions adjacent to first and third non-oxidized regions, the second layer disposed between the first and third layers and comprising a non-oxidized semiconductor material, the first and third non-oxidized regions comprising a semiconductor material, each of the oxidized regions having an aluminum contents greater than 20%; and appropriately spacing the first lens layer from the third lens layer to reduce the scattering and/or reflection losses in an optical cavity.

Abstract: A method for purifying heat shock protein complexes is provided which comprises the steps of adding a solution containing heat shock protein complexes, in which heat shock proteins are associated with peptides, polypeptides, denatured proteins or antigens, to a column containing an ADP matrix to bind the heat shock proteins complexes to the ADP matrix and adding a buffer containing ADP to the column to remove the heat shock protein complexes in an elution product. Additionally a method for synthesizing heat shock protein complexes and purifying the complexes so produced is provided which comprises the steps of adding heat shock proteins to an ADP matrix column to bind them to the matrix, adding a solution of peptides, polypeptides, denatured proteins or antigens to the column to bind them to the heat shock proteins as heat shock protein complexes and adding a buffer containing ADP to the column to remove the complexes in an elution product.

Abstract: A method of creating a coordinate geometry based (COGO) digital civil site information system (CSIS) model that defines with precision and accuracy each site entity by means of data reconciliation, input, and manipulation. Such data is then mined to obtain data that defines information used in the infrastructure management process. The COGO digital CSIS model may also be implemented for a multitude of tasks related to site management and development.

Abstract: An improved light emitting device is provided.