Abstract: An improved aperture is provided. The aperture comprises: at least a first layer; the first layer being oxidized in a laterally oriented first region; the first layer being modified within a laterally oriented second region, the second region being oxidized less than the first region; a second layer disposed in communication with the first layer, the second layer being oxidized less than the first layer; and a non-planar boundary having top and bottom boundary surfaces and side walls connecting the top and bottom boundary surfaces, the top boundary surface defined as a top surface of the second layer above the laterally oriented first region and the bottom boundary surface defined as a bottom surface of the laterally oriented second region, the first and second regions defining the aperture.

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations.

Abstract: A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.

Abstract: A scoop apparatus for removing animal faeces from a litter box has a channel shaped configuration to permit easy cleaning rather than a tubular shape. Also the scoop has a retaining section for holding the faeces and stop them falling out of the scoop. The apparatus has an open channel shaped scoop member with side walls having substantially in line top edges, the side walls have bottom edges joined to a base; an entry lip at one end of the scoop member is in line with the top edges of the side walls leading to a substantially flat receiving portion sloped down to the base of the scoop member. A plurality of diamond shaped sifting openings are provided in the receiving portion for sifting out litter particles, and the scoop member has a handle portion adjacent the receiving portion with a width less than the receiving portion, and an exit at the end of the scoop member opposite the entry lip, adapted to have a disposable bag attached thereto.

Abstract: The present invention relates generally to separation methods, and more particularly to a method to separate nucleic acids and viruses from other substances using porous media by combining flow rate and with electrical field strength. For example, methods to concentrate and size-fractionate of nucleic acids are hereby provided.

Abstract: Methods and a diagnostic aid for distinguishing a subset of HPV that is associated with an increased risk of developing cervical dysplasia and cervical cancer. The method comprises either distinguishing leucine or valine at amino acid position 83 in the HPV-16 E6 open reading frame, or detecting a nucleotide of T or G at nt 350 in the HPV-16 E6 gene.

Abstract: The present invention provides transparent carbon nitride films, processes or making them and compositions of matter comprising them. The films are made using a magnetron sputter gun and a ion beam. Low pressure and high velocity atoms and ions are an important part of the present invention.

Abstract: A quantum cavity light emitting element is provided, comprising first and second mirrors to form a first cavity, at least first and second reflecting surfaces to form a second cavity oriented perpendicularly to the first, and a light emitting material within both cavities. The thickness of the first cavity is designed to enhance emission of light from the light emitting material along the axis of the first cavity, while the second cavity has a predetermined thickness which suppresses emission of light from the light emitting material.

Abstract: The invention provides fittings for the ends of electrochromatography cols. Each fitting includes an annular electrode surrounding one end of the passage electrical fields to be applied. The fitting also contains a passageway for eluant flowing into or out of the column, an annular chamber for the electrode and a membrane separating the passageway from the annular electrode chamber. The membrane prevents gases and electrolytic products from entering the column eluent going through the chromatographic column. The membrane also isolate the electrodes from the compounds such as proteins and macromolecules being separated. A buffer solution was pumped through the electrode chamber to remove the gases and electrode products. The buffer flow through the electrode chamber maintains a constant pH and conductivity so that the electrical field applied by each electrode is constant. The buffer flow also serves to remove the heat generated in the electrode chamber.

Abstract: The present invention provides transparent carbon nitride films, processes or making them and compositions of matter comprising them. The films are made using a magnetron sputter gun and a ion beam. Low pressure and high velocity atoms and ions are an important part of the present invention.

Abstract: According to the present invention, there is provided a wire terminal and assembly. The wire terminal and assembly comprises a wire way which is connected to a pivot support plate. An assembly hinge plate is provided with a hinge which in turn is clipped onto the hinge with a clip. A DIN rail is attached to the assembly hinge plate and an upright support plate is connected to the wire way. A terminal block is removably attached to the DIN rail. Primary and secondary terminals are connected to the terminal block. It should be appreciated that the terminal block has a base member which is integrally connected to a wire guide and a terminal component housing. Finally, it should be appreciated that the wire guide and terminal component housing is provided with a space therebetween, the wire way provides a housing for wire.