Abstract: A lead frame adapted for a plurality of semiconductor chips in which, for each semiconductor chip, at least one electric terminal is extended out of the package after encapsulation of the lead frame. In addition, a process for the production of a lead with this lead frame, enables a full automation of the lead assembly and good, reliable production. The lead frame has at least one mechanical node (T1, T2, T3, T4; T) at which, by severing a single reinforced node, at least three electric conductors (1, 2, G; 3, 4, G; 5, 6, G; 7, 8, G; 21, 22, 23) are electrically separated from one another.

Abstract: An amplifier includes a first pair of FETS arranged in a differential amplifier configuration having their drain-source paths connected between a first constant current source and a point of operating potential. A second pair of FETS has gate electrodes coupled together for receiving an input signal, source electrodes coupled together to a second constant current source, and drain electrodes connected to sources of third and fourth FETS, respectively. The gate electrodes of the fourth FET and the first FET in the first pair are connected to the sources of the third and fourth FETS, respectively, the latter connection forming an output junction. A third pair of FETS has gate electrodes coupled together for receiving the input signal, source electrodes coupled together to the source electrodes of the second pair to form another differential amplifier configuration, and drain electrodes coupled to the source electrodes of fifth and sixth FETs, respectively.

Abstract: A method for producing a recessed oxide allows the fabrication of large bonding pads with small capacitance. These bonding pads on simultaneously thick oxide on the semiconductor surface enable contact exposure with good image formation of fine structures on the surface of a transistor. With a protective layer (2), a region (S1) of a semiconductor surface (1) is covered. The area of the semiconductor surface (1) uncovered with the protective layer (2) is etched. Subsequently, an oxide (3) of desired thickness (b) is deposited. With a second phototechnological step the deposited oxide (3) is etched with a structure (S2). Thermal oxidation follows with growth of a hermetic oxide layer (4) the thickness (c) of which is small relative to the thickness (b) of the deposited oxide layer (3). The thermic oxide layer (4) is structured to form the desired geometry.

Abstract: A method and arrangement for the positioning and bonding of a solid body (2), in which one part of the solid body (2) together with the bonding agent (6) is to be attached to a further element (7) and bonded to a base (4) is to be capable of positioning the solid body (2), at the point attained after positioning, with both high precision and high long term stability. The solid body (2) is immersed in the bonding agent (6) and this bonding agent is in turn located in a groove of a further electrically conducting body (7). The further body (7) is heated by current flow to a temperature at which the solid body (2) is movable within the bonding agent. Upon attaining the desired positioning of the solid body (2), the bonding agent is allowed to cool through controlled reduction of the heating current until solidification occurs.

Abstract: An optoelectronic coupling element having a light-emitting semiconductor device serving as transmitter chip, and a light-receiving semiconductor device serving as a receiver chip, and are firmly connected together through an optic coupling medium (3). This compact coupling element is to have a defined degree of coupling largely independent of the housing and is to be suitable for simple conductor tape mounting. To this end, the coupling medium (3) is an insulating transparent intermediate layer, and the light-emitting semiconductor device (1), the coupling element (3) and the light-receiving semiconductor device (2) are directly laminated one on the other. This optoelectronic coupler is used in particular as an optocoupler for signal transmission.

Abstract: An electron beam tester (11) utilizes a source (13) of stored electrons to produce a probing beam (14) of short pulses and high intensity. The high intensity improves the signal-to-noise ratio of the potential being measured and is especially suited for measuring potentials in high speed integrated circuits (19) while they are operating. The cyclotron principle is adapted for storing the electrons in an orbital configuration wherein the electrons are clustered in bunches having substantially the same energy level. These characteristics of the electrons in a beam facilitate its operation and control in an electron beam tester for contactless monitoring of voltage potentials in an operating high speed integrated circuit.

Abstract: An optoelectronic coupling element with a light-emitting semiconductor component (1), in particular a transmitter chip, and a light-receiving semiconductor component (2), in particular a receiver chip, are firmly joined together via an optic coupling medium (3). The construction of this compact coupling element is to require relatively little expense and thus to be cost-effective. To this end the invention provides that the light-emitting semiconductor component (1) and the light-receiving semiconductor component (2) are connected together directly through the coupling medium (3), and that the coupling medium (3) is a transparent adhesive or glass solder compound. The optoelectronic coupling element disclosed is highly suitable for use as an optocoupler for signal transmission.

Abstract: In particular for coating tools and product components, which are subject to extremely high wear, metal nitride films are used. It has been found that if the metals have markedly different melting points, in accordance with the invention, the concentrations of the metals can be varied as a function of the film thickness. For manufacturing such mixed nitride films by vaporization of metal alloy cathodes by means of an arc while simultaneously introducing nitrogen as reaction gas, a variable voltage is applied to the substrate during vaporization of the metal alloy and varied as a function of the film thickness on the substrate.

Abstract: A relay features two base-structured components (1 & 2) in the shape of half of a bowl having a winding (3) mounted on it. Two pole plates (6 & 7) are embedded in a common plane in one (2) of the base-structural components. The ends of the pole plates extend into a contact space (4 & 5). Paralleling the pole plates inside the contact space is a bridge armature (8) that is secured to a frame-shaped spring (9) in a plane coextensive with the separation between the two jointed base-structural components. The connection elements extend out of the sides of the base structure in the spool flanges and are bent down.

Abstract: Inverter circuits are provided with bridge arms which, for example, including series-connected transistors (T1l , T2l ) with one freewheeling diode (D1, D2) each transistor. A critical operating state occurs when the recovery current is switched off by one of the diodes (D1, D2), so that the other transistor (T1l , T2l ) is cut in. The return current, which passes through this diode, can assume such high values, when rapidly cutting in the transistor, that the "dynamic" blocking capability of the diode is exceeded, and the diode is burnt out. The load current and the control current are thus reversed, so that the transistor is switched on more slowly and temporarily takes over part of the voltage which is normally applied to the diode.

Abstract: A housing suitable for an electrical or electronic component such as a relay, including a wall having apertures (5, 6) and gaps (7) wherein distribution ribs running on the outside form with the housing surface a sharp inner edge (10). Due to these sharp inner edges, capillary action of the sealing compound is developed on the distribution ribs whereby the sealing compound is transported from a dispensing site to the apertures (5, 6) and housing gaps (7).

Abstract: In a process for the stabilization of a PN junction an oxide layer (12) is produced on a semiconductor substrate (11), and above this layer a nitride layer (13) is also produced. The oxide layer (12) is wet-chemically etched following the formation and etching of the nitride layer (13). Following the wet chemical etching of the oxide layer (12), the overlapping nitride (13) is re-etched. Dopant implantation takes place in the wet-chemically-etched region. This then is followed by a diffusion. A process of this type achieves high electrical stability for an electronic component. Thereupon, the photoresist (14) or any other type of layer covering the nitride (13) is removed.

Abstract: The response and extinction voltage of a relay are adjusted by displacing an armature, on the one hand, and pole plates, on the other hand, parallel to each other. The extent of each opposing pole face is varied without varying the air-gap distance. This method of calibration is of particular advantage in relation to a reed relay with a bridge contact.

Abstract: A security unit is disclosed for controlling access to a main computer system. The security unit provides a comprehensive mechanism for detecting and inhibiting sophisticated attackers. A method of operation and special purpose hardware for implementing this operation are disclosed.

Abstract: A signal voltage (E) based upon a supply voltage must be converted to a signal voltage (A) with ground reference so as to enable further processing in a logic circuit. A simple level converter comprises a series connection of a MOSFET (T1) connected to the supply voltage; the MOSFET also comprises a resistor (T2). The source terminal of the MOSFET (T1) is located at the potential of the supply voltage. The voltage to be converted is applied between the gate terminal and the source terminal, and the converted voltage occurs at the resistor (T2). The two voltages are each limited by one Zener diode (D2, D1).

Abstract: When semiconductor rods during floating zone melting are doped with dopants having a very low distribution coefficient, the non-homogeneous temperature distribution causes a relatively strong non-homogeneous separation of the dopants (striation). The homogeneity can be improved through an after-heater (6) connected to the heating coil (4) and arranged on the side of the monocrystalline rod part (2), the heater being coaxial with the coil and connected parallel to it.

Abstract: A semiconductor power circuit breaker has several emitter zones of a width (b) less than 30 microns. The semiconductor device may be in the form of a switching transistor or a gate turn off (GTO) thyristor. The spacing (a) of the emitter zones is less than the thickness (d) of the low doped inner zone. The power circuit breaker can thus be operated up to the collector-base break-down voltage U.sub.CBO without a destruction through "second break-down" occurring. On the other hand, high current carrying capacity is maintained, since it depends practically only on the chip surface instead of being a function of emitter area.

Abstract: A pulse swallower 41 utilizes a local feedback loop (51 and 52) on its output flip-flop (49) enabling it to extinguish its high level output after one cycle of the clock signal being applied as an input. The other input to the pulse swallower is the swallow signal which initiates a pulse swallow cycle for eliminating a single clock pulse of the input clock (42) from appearing at the clock output (44). This configuration of a pulse swallower enables correct operation, or single pulse swallowing, to occur at frequencies of up to one-over-four.tau.(1/4.tau.) which is higher than that of conventional pulse swallowers.

Abstract: A compact electromagnetic relay of the type having an insulative base (1) adapted to receive an electromagnetic assembly (2, 3, 4) on one side of its partition wall (15) and a contact assembly (6) on the other side includes especially adapted armature (3) and pusher (5). The armature has one leg (32) that is bifurcated to form a slotted opening (324) communicating with a socket (323). The shaft region (55) of the pusher has two cross-sectional dimensions of different size. One dimension d1 allows the slotted opening to freely pass over it while the other dimension d2 prevents the socket from disengaging with the pusher when the armature is rotated to assume its working position.

Abstract: Power MOSFETs for switching high voltages have a relatively high on-state DC resistance. The invention provides for the connection in series of a low voltage MOSFET with a higher voltage bipolar transistor. This series circuit is connected in parallel with a series circuit consisting of another MOSFET and a threshold switch. The threshold switch is placed between the base terminal and the free terminal of the low voltage MOSFET. The MOSFETs receive a joint control signal (u.sub.1) which is routed to the low voltage MOSFET. In the case of an inductive load with recovery operation, the signal is routed through a delay element that becomes active when the circuit is turned on.