Abstract: A method of manufacturing an electronic component built-in substrate, includes the steps of mounting a chip-like electronic component having a connection pad and a metal protection layer formed on a whole of one surface to cover the connection pad, on a wiring substrate to direct the connection pad upward; embedding the electronic component with the insulating layer; processing the insulating layer in a thickness direction to leave the insulating layer in a side of the electronic component and to expose the metal protection layer of the electronic component; and forming an upper wiring layer having an in-chip wiring part which is connected to the connection pad and contacts an upper surface of the electronic component and is constructed by an underlying metal pattern layer formed by patterning the metal protection layer and a conductive pattern layer formed thereon, and an extended wiring part which is connected to the in-chip wiring part to extend onto the insulating layer and is formed by an identical layer

Abstract: A vapor deposition apparatus is provided, which does not cause changes in composition, decomposition and quality change of an organic vapor deposition material. The organic vapor deposition material is placed on a conveying unit by an amount for a single substrate, and conveyed into a vapor deposition vessel preliminarily heated. Since a small amount of the organic vapor deposition material is heated and exhausted through generation of an organic material vapor under heating condition for each substrate, neither decomposition nor quality change with moisture occurs because heating time is short. Even though different organic compounds are mixed, no change in composition occurs so that an organic vapor deposition material in which a base material is mixed with a coloring substance can be pooled in a pooling tank and then placed in the conveying unit.

Abstract: The present invention provides: luster coating film forming method I comprising (1) applying an aqueous luster thermosetting base coating composition (A) to a substrate in two to five stages, in such a manner that the thickness of the base coating composition (A) applied in each of the second and subsequent stages becomes 0.

Abstract: A mobile communication terminal having a structure including a host section and an engine section is built compactly. —As a request for using a host-connecting device is received from an engine section 40, a host section 30 makes a judgment of whether or not a current state of an engine processor of the engine section 40 is an engine-mode state of controlling actively an operation of an engine-connecting device connected to the engine processor of the engine section 40, and the engine-mode state is estimated to be continued. Further, when a result of the judgment is affirmative, the host section 30 operates a host-connecting section, according to an operation mode specified by operation mode parameters. As a result, in a mode in which a request is made by an application executed by the engine processor, a specific host-connecting device which the application has desired to use is operated.

Abstract: A film forming method for producing a barrier film for a semiconductor. A metallic material gas and a reactive gas are alternatively introduced into a vacuum chamber. A back-flow preventing gas and an auxiliary gas are also introduced into the vacuum chamber. The reactive gas and the auxiliary gas are moved with a flow of the back-flow preventing gas, and radicals are produced by being in contact with a catalytic material. The metallic material gas is not in contact with the catalytic material, and the catalytic material is not degraded. A shower plate may be disposed between a radical producing chamber and a reaction chamber, so that the radicals are fed into the reaction chamber through holes.

Abstract: A buildup board includes a buildup layer having a multilayer structure and/or a core layer having a multilayer structure. The multilayer structure includes a signal wiring pattern, a pad connected to the signal wiring pattern, an insulating part arranged around the pad on the same layer as the pad, and a conductor arranged around the insulating part on the same layer as the pad. The multilayer structure has at least two different keepouts where the keepout is defined as a minimum interval between an outline of the pad and the conductor closest to the pad on the same layer.

Abstract: An optical hybrid circuit includes a multimode interference coupler; a first 2:2 optical coupler; a second 2:2 optical coupler; a third 2:2 optical coupler; and a phase controlling region. The first 2:2 optical coupler, the second 2:2 optical coupler, and the third 2:2 optical coupler are coupled to one of the pair of first output channels, the pair of second output channels, the pair of third output channels, and the pair of fourth output channels of the multimode interference coupler. The phase controlling region is provided in one or both of each pair of at least two pairs of output channels from among three pairs of output channels to which the first 2:2 optical coupler, the second 2:2 optical coupler, and the third 2:2 optical coupler are coupled, respectively.

Abstract: An electronic component (chip) mounted structure includes a chip having a terminal, a wiring board having a terminal electrically connected to the terminal of the chip, and an interposing board disposed between the chip and the wiring board and having a structure including an insulating base material provided with a large number of filamentous conductors penetrating the insulating base material in a thickness direction thereof. The terminal of the chip is electrically connected to the terminal of the wiring board via a plurality of filamentous conductors provided in the interposing board.

Abstract: An organic thin film deposition device that is compact and high in processing capability is provided. Inside a vacuum chamber, first and second substrate arrangement devices that can be in a horizontal posture and a standing posture are provided; and when in the standing posture, substrates held by the respective substrate arrangement devices and first and second organic vapor discharging devices face each other. When one of the substrate arrangement devices is in the horizontal posture, masks and the substrates are lifted up by alignment pins and transfer pins and are replaced with a substrate not yet film formed, for position adjustment. With one organic thin film deposition device, two substrates can be processed at the same time.

Abstract: A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit.

Abstract: Whenever, there occurs a predetermined event which occurs periodically, a host section which includes a host processor 31, makes a judgment of whether or not it is an engine-mode state in which an engine section 40 is executing an engine application, and whether or not it is estimated that the engine-mode state will be continued. When this judgment result is affirmative, the host section notifies to the engine section 40, information which the host section has collected after the previous notification, and which is to be notified periodically to the engine section. As a result of this, at a periodic timing called as an occurrence of a predetermined event, periodic notification data is notified from the host section to the engine section 40.

Abstract: An operation signal corresponding to an input operation on a rotating body by a user is output to an information-processing unit 400 and the operation signal is processed by a processing condition in accordance with the condition of the input operation. Based on the information property such as sound volume processed based on the operation signal and output by the output unit 200 or a setting position such as a cue point that is set by the input operation on the switch section 340 and at which a reproducing position is changed by a processing unit 440 in accordance with a pressing operation on the rotating body 600, the location of the reproducing position that is moved in accordance with the condition of the input operation on the rotating body 600 is recognized. And the rotating body 600 is operated (conducting click-like movement restriction, vibration and the like) in accordance with output condition corresponding to the condition of the input operation based on the property.

Abstract: An object of the present invention is to provide a novel cationic photopolymerization initiator that efficiently absorbs light and generates protons. As a means of achieving the object above, a preferred cationic photopolymerization initiator of the present invention includes an initiator comprising a bismuthonium salt represented by the following general formula (II): Wherein R11, R12, and R13 may be the same or different and are each an optionally substituted monocyclic aryl group or an optionally substituted monocyclic heteroaryl group, R14 is an optionally substituted fused polycyclic aromatic group or an optionally substituted fused polycyclic heterocyclic group, and X? is an anion associated with a cation.

Abstract: A high quality interface is formed at a low oxygen-carbon density between a substrate and a thin film while preventing heat damage on the substrate and increase of thermal budget. This method includes a step of loading a wafer into a reaction furnace, a step of pretreating the wafer in the reaction furnace, a step of performing a main processing of the pretreated wafer in the reaction furnace, and a step of unloading the wafer from the reaction furnace after the main processing. Hydrogen gas is continuously supplied to the reaction furnace in the period from the end of the pretreating step to the start of the main processing and at least during vacuum-exhausting an interior of the reaction furnace.

Abstract: A method for manufacturing a MEMS device, includes: preparing a substrate provided with a first substrate in which a cavity is formed, and a second substrate that is bonded to a side of the first substrate on which the cavity is formed and includes a slit to delimit a movable portion in a position corresponding to the cavity, the second substrate, including a first surface thereof facing the first substrate, being provided with a thermally-oxidized film selectively formed on the first surface in a position corresponding to the movable portion; forming a first electrode layer on a second surface opposite to the first surface on which the thermally-oxidized film for the movable portion is formed; forming a sacrifice layer on the first electrode layer and the second substrate; forming a second electrode layer on the sacrifice layer; and removing the sacrifice layer and the thermally-oxidized film after the second electrode layer is formed.

Abstract: A motor 10 with reduction gear mechanism has a first worm 15 and a second worm 15? having mutually opposite screw torsion directions; a first counter gear 30 including a first large-diameter gear 31 meshing with the first worm 15 and a first small-diameter gear 35 rotating as one piece with the first large-diameter gear 31; a second counter gear 30? including a second large-diameter gear 31? meshing with the second worm 15? and a second small-diameter gear 35? rotating as one piece with the second large-diameter gear 31?; and an output gear 40 meshing with both the small-diameter gears 35, 35?; wherein a first device 50 for applying a force to press the first counter gear 30 towards a gear case 21 is arranged between the tip of the first small-diameter gear 35 and a gear case cover 29, and a second device 50? for applying a force to press the second counter gear 30? towards the gear case 21 is arranged between the tip of the second small-diameter gear 35? and the gear case cover 29.

Abstract: A semiconductor package is disclosed that includes a semiconductor device; a circuit board; and a connection mechanism including a first conductive terminal provided on the semiconductor device, and a second conductive terminal provided on the circuit board side, the connection mechanism electrically connecting the semiconductor device and the circuit board via the first conductive terminal and the second conductive terminal. At least one of the first conductive terminal and the second conductive terminal of the connection mechanism includes one or more carbon nanotubes each having one end thereof fixed to the surface of the at least one of the first conductive terminal and the second conductive terminal, and extending in a direction away from the surface. The first conductive terminal and the second conductive terminal engage each other through the carbon nanotubes.

Abstract: A method of manufacturing a semiconductor device, includes temporarily fixing a semiconductor chip to a supporting member to direct a connection electrode toward the supporting member side, forming an insulating layer for preventing resin-permeation covering the semiconductor chip, on the supporting member and the semiconductor chip, forming a resin substrate sealing a periphery and a back surface side of the semiconductor chip, on the insulating layer, and removing the supporting member to expose the connection electrode of the semiconductor chip. A build-up wiring is connected directly to the connection electrode of the semiconductor chip.